Email: [email protected] Website: www.olitech-elec.com Plastic-Encapsulate Diodes BAV19WS~BAV21WS SWITCHING DIODE FEATURES Low Reverse Current z Surface Mount Package Ideally Suited for Automatic Insertion z Fast Switching Speed For General Purpose Switching Applications z z + - MARKING: BAV19WS A8 BAV20WS T2 BAV21WS T3 T2 T3 A8 SOD-323 The marking bar indicates the cathode MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol VRM Non-Repetitive Peak Reverse Voltage VRRM Peak Repetitive Reverse Voltage VRWM Working Peak Reverse Voltage VR(RMS) Value Parameter BAV19WS BAV20WS BAV21WS 120 200 250 100 150 200 71 106 141 RMS Reverse Voltage Unit V V V Average Rectified Output Current 200 mA IFSM Non-repetitive Peak Forward Surge Current @ t=8.3ms 2.0 A PD Power Dissipation 250 mW Thermal Resistance from Junction to Ambient 500 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ IO RΘJA ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse current IR Forward voltage VF Total capacitance Ctot Reverse recovery time Test conditions Symbol trr Min Typ Max VR=100V BAV19WS 0.1 VR=150V BAV20WS 0.1 VR=200V BAV21WS 0.1 IF=100mA 1 IF=200mA 1.25 Unit uA V VR=0V,f=1MHz 5 pF IF= IR =30mA, Irr=0.1*IR , RL=100Ω 50 ns Page:P2-P1 OLITECH ELECTRONICS CO. LTD. Email: [email protected] BAV19WS~BAV21WS Forward Website: www.olitech-elec.com Typical Characteristics Plastic-Encapsulate Diodes Characteristics Reverse 100 Ta=100℃ Ta =2 5℃ Ta =1 00 ℃ 30 REVERSE CURRENT IR (nA) 100 IF (mA) 300 FORWARD CURRENT Characteristics 1000 400 10 30 10 Ta=25℃ 3 1 3 0.3 1 0.2 0.1 0.4 0.6 0.8 FORWARD VOLTAGE 1.0 VF 1.2 1 1.4 50 (V) 100 150 REVERSE VOLTAGE 200 VR 250 (V) Power Derating Curve Capacitance Characteristics 300 1.4 Ta=25℃ f=1MHz (mW) PD 200 1.0 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 250 1.2 0.8 0.6 150 100 50 0.4 0 0 5 10 REVERSE VOLTAGE 15 VR 20 0 25 (V) OLITECH ELECTRONICS CO. LTD. 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃) Page:P2-P2