DinTek DTM4420 N-channel 30-v (d-s) mosfet optimized for high-side synchronous Datasheet

DTM4420
www.din-tek.jp
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.0089 at VGS= 10 V
13
0.012 at VGS = 4.5 V
12
VDS (V)
30
Qg (Typ.)
6.8 nC
• Halogen-free
• TrenchFET® Power MOSFET
• Optimized for High-Side Synchronous
Rectifier Operation
• 100 % Rg Tested
• 100 % UIS Tested
APPLICATIONS
• Notebook CPU Core
- High-Side Switch
SO-8
D
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Limit
30
± 20
13
12
ID
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
V
11b, c
9b, c
50
3.8
A
2.1b, c
22
24
4.5
2.8
mJ
2.5b, c
1.6b, c
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
38
22
Maximum
50
28
Unit
°C/W
Notes:
a. Base on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
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DTM4420
www.din-tek.jp
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
28
mV/°C
-6
1.2
2.5
V
± 100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 10 V
20
µA
A
VGS = 10 V, ID = 11 A
0.0077
0.0089
VGS = 4.5 V, ID = 10 A
0.0096
0.012
VDS = 15 V, ID = 11 A
52
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
820
VDS = 15 V, VGS = 0 V, f = 1 MHz
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS = 15 V, VGS = 5 V, ID = 11 A
2.5
nC
2.3
f = 1 MHz
VDD = 15 V, RL = 1.4 Ω
ID ≅ 9 A, VGEN = 4.5 V, Rg = 1 Ω
0.36
1.8
3.6
16
24
12
18
24
10
20
td(on)
8
16
10
20
VDD = 15 V, RL = 1.4 Ω
ID ≅ 9 A, VGEN = 10 V, Rg = 1 Ω
tf
Fall Time
23
10.2
tf
td(off)
Turn-Off Delay Time
15
6.8
16
tr
Rise Time
pF
73
VDS = 15 V, VGS = 10 V, ID = 11 A
td(on)
Turn-On Delay Time
195
16
24
8
15
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
IS
TC = 25 °C
25
ISM
VSD
50
IS = 9 A
A
V
0.8
1.2
Body Diode Reverse Recovery Time
trr
15
30
ns
Body Diode Reverse Recovery Charge
Qrr
6
12
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C
8
7
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DTM4420
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
5
VGS = 10 thru 4 V
4
I D - Drain Current (A)
I D - Drain Current (A)
40
30
20
VGS = 3 V
10
TC = - 55 °C
3
2
TC = 25 °C
1
TC = 125 °C
0
0
2
4
6
8
0
0.0
10
0.5
VDS - Drain-to-Source Voltage (V)
1.0
2.5
3.0
Transfer Characteristics
1200
0.015
VGS = 4.5 V
0.013
900
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
2.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.011
VGS = 10 V
0.009
Ciss
600
300
Coss
0.007
Crss
0
0.005
0
10
20
30
40
0
50
12
6
18
24
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.8
10
ID = 11 A
ID = 11 A
8
VDS = 15 V
6
VDS = 24 V
4
1.5
VGS = 10 V
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
1.5
1.2
VGS = 4.5 V
0.9
2
0
0
4
8
12
Qg - Total Gate Charge (nC)
Gate Charge
16
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
3
DTM4420
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.030
100
0.025
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.001
0.0
0.020
TJ = 125 °C
0.015
0.010
TJ = 25 °C
0.005
0.000
0.4
0.2
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.2
50
2.0
40
Power (W)
VGS(th) (V)
1.8
ID = 250 µA
1.6
30
20
1.4
10
1.2
1.0
- 50
- 25
0
25
50
75
100
125
0
10- 3
150
10- 2
10- 1
TJ - Temperature (°C)
Threshold Voltage
Limited by RDS(on)*
100 µA
10
I D - Drain Current (A)
10
100
Single Pulse Power, Junction-to-Ambient
100
1 ms
10 ms
1
100 ms
1s
10 s
0.1
TA = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
4
1
Time (s)
100
600
DTM4420
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
18
I D - Drain Current (A)
15
12
9
6
3
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
6
2.0
5
1.5
Power (W)
Power (W)
4
3
1.0
2
0.5
1
0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
DTM4420
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 70 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
6
1
10
Package Information
www.din-tek.jp
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
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Application Note
www.din-tek.jp
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
1
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
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Disclaimer
www.din-tek.jp
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Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
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