BSP317P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode R DS(on) • Logic Level ID • dv/dt rated -250 V 4 Ω -0.43 A PG-SOT223 Drain pin 2/4 x Qualified according to AEC Q101 4 Gate pin1 3 Source pin 3 Type BSP317P Package PG-SOT223 2 1 VPS05163 Packaging Tape and Reel Information Marking L6327: 1000 pcs/reel BSP317P Non dry Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C -0.43 TA=70°C -0.34 ID puls -1.72 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 1.8 W -55... +150 55/150/56 °C Pulsed drain current TA=25°C Reverse diode dv/dt kV/µs IS =-0.43A, VDS =-200V, di/dt=-200A/µs, Tjmax =150°C TA=25°C Tj , Tstg Operating and storage temperature IEC climatic category; DIN IEC 68-1 2.1 5 Rev.1.6 Page 1 20110419 BSP317P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - 15 25 @ min. footprint - 80 115 @ 6 cm 2 cooling area 1) - 48 70 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 4) SMD version, device on PCB: RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. -250 - - -1 -1.5 -2 Static Characteristics Drain-source breakdown voltage V(BR)DSS V VGS =0, ID=-250µA Gate threshold voltage, VGS = VDS VGS(th) ID =-370µA Zero gate voltage drain current µA IDSS VDS =-250V, VGS =0, Tj =25°C - -0.1 -0.2 VDS =-250V, VGS =0, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 3.3 5 Ω RDS(on) - 3 4 Gate-source leakage current VGS =-20V, VDS =0 Drain-source on-state resistance VGS =-4.5V, ID =-0.39A Drain-source on-state resistance VGS =-10V, ID =-0.43A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.1 Page 2 20110419 BSP317P Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. |VDS|≥2*|ID |*RDS(on)max , 0.38 0.76 - S pF Dynamic Characteristics Transconductance gfs ID =-0.34A Input capacitance Ciss VGS =0, VDS =-25V, - 210 262 Output capacitance Coss f=1MHz - 30 37 Reverse transfer capacitance Crss - 13.4 16.7 Turn-on delay time td(on) VDD =-30V, VGS=-10V, - 5.7 8.5 Rise time tr ID =-0.43A, RG =6Ω - 11.1 16.6 Turn-off delay time td(off) - 254 381 Fall time tf - 67 100 - -0.5 - -4 -5.2 - -11.6 -15.1 V(plateau) VDD =-200V, ID=-0.43A - -2.8 - IS - - -0.43 A - - -1.72 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-200V, ID=-0.43A VDD =-200V, ID=-0.43A, -0.65 nC VGS =0 to -10V Gate plateau voltage V Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD Reverse recovery time trr VGS =0, IF =-0.43A - -0.84 -1.2 V VR =-125V, IF =lS , - 92 138 ns Reverse recovery charge diF /dt=100A/µs - 210 315 nC Rev.2.1 Qrr Page 3 20110419 BSP317P 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS | ≥ 10V 1.9 BSP 317 P -0.5 W BSP 317 P A 1.6 -0.4 1.4 1.2 ID Ptot -0.35 1 -0.3 -0.25 0.8 -0.2 0.6 -0.15 0.4 -0.1 0.2 -0.05 0 0 20 40 60 80 100 °C 120 0 0 160 20 40 60 80 100 120 TA 160 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25°C parameter : D = tp /T -10 °C 1 BSP 317 P 10 2 BSP 317 P K/W A tp = 140.0µs 10 1 /I Z thJA D -10 0 on ) = V ID DS 1 ms DS ( 10 ms 10 -1 R -10 -1 10 0 D = 0.50 0.20 10 -2 0.10 0.05 -10 -2 0.02 DC -10 -3 -1 -10 -10 0 -10 1 -10 2 10 -3 V -10 3 VDS Rev.2.1 10 -4 -7 10 0.01 single pulse 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 20110419 BSP317P 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ) RDS(on) = f (ID ) parameter: Tj =25°C, -VGS parameter: VGS ; Tj =25°C, -VGS 10 10V A 5V 4.4V 3.6V 3.2V 1.2 2.8V 2.4V 1 2.2V Ω 2.2V 2.4V 2.8V 3.2V 3.6V 4.4V 5V 10V 8 RDS(on) -I D 1.6 7 6 5 0.8 4 0.6 3 0.4 2 0.2 0 0 1 0.5 1 1.5 2 2.5 3 3.5 4 0 0 5 V 0.2 0.4 0.6 0.8 1 1.2 A 1.6 -ID -VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS|≥ 2 x |ID | x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj =25°C 1.6 1.4 S A 1.2 1.1 1.2 g fs -I D 1 1 0.9 0.8 0.8 0.7 0.6 0.6 0.5 0.4 0.4 0.3 0.2 0.2 0.1 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 V 3.6 0.2 0.4 0.6 0.8 1 1.2 A 1.6 -ID -VGS Rev.2.1 0 0 Page 5 20110419 BSP317P 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = -0.43 A, VGS = -10 V parameter: VGS = VDS 11 BSP 317 P 2.4 V Ω 98% 2 VGS(th) RDS(on) 9 8 7 1.8 typ. 1.6 1.4 6 1.2 5 98% 2% 1 4 0.8 typ 3 0.6 2 0.4 1 0.2 0 -60 -20 20 60 100 °C 0 -60 180 -20 20 60 100 Tj °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0, f=1 MHz, Tj = 25°C parameter: Tj 10 3 -10 1 pF BSP 317 P A Ciss IF -10 0 C 10 2 Coss Crss 10 1 -10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 4 8 12 16 20 24 28 V 36 -VDS Rev.2.1 -10 -2 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD Page 6 20110419 BSP317P 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QGate) V(BR)DSS = f (Tj ) parameter: ID = -0.43 A pulsed, Tj = 25°C -16 BSP 317 P BSP 317 P -300 V V(BR)DSS V VGS -12 -10 -285 -280 -275 -270 -265 -8 -260 -255 -6 -250 -4 -2 20% -245 50% -240 80% -235 -230 0 0 2 4 6 8 10 12 14 nC 18 |Q G| Rev.2.1 -225 -60 -20 20 60 100 °C 180 Tj Page 7 20110419 BSP317P Rev.2.1 Page 8 20110419