TGS BC558 To-92 plastic-encapsulate transistor Datasheet

TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
BC556/BC557/BC558
TRANSISTOR (PNP)
TO-92
FEATURES
z
High Voltage
z
Complement to BC546/BC547/BC548
1. COLLECTOR
2. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Collector-Base Voltage
VCBO
VCEO
VEBO
Value
BC556
BC557
BC558
Collector-Emitter Voltage
-80
-50
-30
-65
-45
-30
-5
Emitter-Base Voltage
3. EMITTER
Unit
V
V
V
IC
Collector Current -Continuous
-100
mA
PC
Collector Power Dissipation
625
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BC556
BC557
BC558
BC556
BC557
BC558
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
BC556
BC557
BC558
BC556
BC557
BC558
BC556
BC557
BC558
BC556
BC557
BC558
BC557A
BC556B/BC557B/BC558B
BC557C
Test
conditions
VCBO
IC= -100μA, IE=0
VCEO
IC= -2mA , IB=0
VEBO
IE= -100μA, IC=0
ICBO
ICEO
IEBO
hFE
Min
Max
-80
-50
-30
-65
-45
-30
VEB= -5 V, IC=0
120
120
120
120
180
420
Unit
V
V
-5
VCB=- 70 V, IE=0
VCB= -45 V, IE=0
VCB= -25V, IE=0
VCE= -60 V, IB=0
VCE= -40 V, IB=0
VCE= -25 V, IB=0
VCE=-5V, IC= -2mA
Typ
V
-0.1
μA
-0.1
μA
-0.1
μA
800
800
800
220
460
800
Collector-emitter saturation voltage
VCE(sat)
IC=-100mA, IB= -5mA
-0.65
V
Base-emitter saturation voltage
VBE(sat)
IC= -100mA, IB=-5mA
-1
V
Transition frequency
fT
VCE= -5V, IC= -10mA
f = 100MHz
150
MHz
A,May,2011
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