Jiangsu BZX84C3V3 Plastic-encapsulate diode Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diode
BZX84C2V4 - BZX84C51
SOT-23
Dim
A
Min
Max
0.37
0.51
B
1.19
1.40
C
2.10
2.50
D
0.89
1.05
TOP VIEW
E
0.45
0.61
D
G
1.78
2.05
A
Features
·
·
·
·
B
Planar Die Construction
350mW Power Dissipation
Zener Voltages from 2.4V - 51V
Ideally Suited for Automated Assembly
Processes
E
C
G
H
2.65
3.05
H
J
0.013
0.15
M
K
J
MAKING see table on page 2 the first code
Maximum Ratings
0.89
1.10
L
0.45
0.61
M
0.076
0.178
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Characteristic
Forward Voltage
@ IF = 10mA
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Notes:
L
K
Symbol
Value
Unit
VF
0.9
V
Pd
350
mW
RqJA
357
K/W
Tj, TSTG
-65 to +150
°C
1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, 300ms pulse width, period = 5ms.
3. f = 1KHz.
DS18001 Rev. P-2
1 of 3
BZX84C2V4 - BZX84C51
Electrical Characteristics
Type
Number
@ TA = 25°C unless otherwise specified
Zener Voltage
Range
(Note 2)
Marking
Code
Maximum Zener
Impedance
(Note 3)
VZ @ IZT
IZT
ZZT @
IZT
Nom (V) Min (V) Max (V)
(mA)
(W)
ZZK @ IZK
(W)
(mA)
Maximum Reverse
Current
IR
VR
(mA)
(V)
Typical Temperature
Coefficient
@ IZT
mV/°C
Min
Max
BZX84C2V4
Z11/KZB
2.4
2.2
2.6
5.0
100
600
1.0
50
1.0
-3.5
0
BZX84C2V7
Z12/KZC
2.7
2.5
2.9
5.0
100
600
1.0
20
1.0
-3.5
0
BZX84C3V0
Z13/KZD
3.0
2.8
3.2
5.0
95
600
1.0
10
1.0
-3.5
0
BZX84C3V3
Z14/KZE
3.3
3.1
3.5
5.0
95
600
1.0
5.0
1.0
-3.5
0
BZX84C3V6
Z15/KZF
3.6
3.4
3.8
5.0
90
600
1.0
5.0
1.0
-3.5
0
BZX84C3V9
Z16/KZG
3.9
3.7
4.1
5.0
90
600
1.0
3.0
1.0
-3.5
0
BZX84C4V3
Z17/KZH
4.3
4.0
4.6
5.0
90
600
1.0
3.0
1.0
-3.5
0
BZX84C4V7
Z1/KZ1
4.7
4.4
5.0
5.0
80
500
1.0
3.0
2.0
-3.5
0.2
BZX84C5V1
Z2/KZ2
5.1
4.8
5.4
5.0
60
480
1.0
2.0
2.0
-2.7
1.2
BZX84C5V6
Z3/KZ3
5.6
5.2
6.0
5.0
40
400
1.0
1.0
2.0
-2.0
2.5
BZX84C6V2
Z4/KZ4
6.2
5.8
6.6
5.0
10
150
1.0
3.0
4.0
0.4
3.7
BZX84C6V8
Z5/KZ5
6.8
6.4
7.2
5.0
15
80
1.0
2.0
4.0
1.2
4.5
BZX84C7V5
Z6/KZ6
7.5
7.0
7.9
5.0
15
80
1.0
1.0
5.0
2.5
5.3
BZX84C8V2
Z7/KZ7
8.2
7.7
8.7
5.0
15
80
1.0
0.7
5.0
3.2
6.2
BZX84C9V1
Z8/KZ8
9.1
8.5
9.6
5.0
15
100
1.0
0.5
6.0
3.8
7.0
BZX84C10
Z9/KZ9/8Q
10
9.4
10.6
5.0
20
150
1.0
0.2
7.0
4.5
8.0
BZX84C11
Y1/KY1
11
10.4
11.6
5.0
20
150
1.0
0.1
8.0
5.4
9.0
BZX84C12
Y2/KY2
12
11.4
12.7
5.0
25
150
1.0
0.1
8.0
6.0
10.0
BZX84C13
Y3/KY3
13
12.4
14.1
5.0
30
170
1.0
0.1
8.0
7.0
11.0
BZX84C15
Y4/KY4
15
13.8
15.6
5.0
30
200
1.0
0.1
10.5
9.2
13.0
BZX84C16
Y5/KY5
16
15.3
17.1
5.0
40
200
1.0
0.1
11.2
10.4
14.0
BZX84C18
Y6/KY6
18
16.8
19.1
5.0
45
225
1.0
0.1
12.6
12.4
16.0
BZX84C20
Y7/KY7
20
18.8
21.2
5.0
55
225
1.0
0.1
14.0
14.4
18.0
BZX84C22
Y8/KY8
22
20.8
23.3
5.0
55
250
1.0
0.1
15.4
16.4
20.0
BZX84C24
Y9/KY9
24
22.8
25.6
5.0
70
250
1.0
0.1
16.8
18.4
22.0
BZX84C27
Y10/KYA
27
25.1
28.9
2.0
80
300
0.5
0.1
18.9
21.4
25.3
BZX84C30
Y11/KYB
30
28.0
32.0
2.0
80
300
0.5
0.1
21.0
24.4
29.4
BZX84C33
Y12/KYC
33
31.0
35.0
2.0
80
325
0.5
0.1
23.1
27.4
33.4
BZX84C36
Y13/KYD
36
34.0
38.0
2.0
90
350
0.5
0.1
25.2
30.4
37.4
BZX84C39
Y14/KYE
39
37.0
41.0
2.0
130
350
0.5
0.1
27.3
33.4
41.2
BZX84C43
Y15/KYF
43
40.0
46.0
2.0
150
375
0.5
0.1
30.1
10.0
12.0
BZX84C47
Y16/KYG
47
44.0
50.0
2.0
170
375
0.5
0.1
32.9
10.0
12.0
BZX84C51
Y17/KYH
51
48.0
54.0
2.0
180
400
0.5
0.1
35.7
10.0
12.0
Notes:
1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, 300ms pulse width, period = 5ms.
3. f = 1KHz.
DS18001 Rev. P-2
2 of 3
BZX84C2V4 - BZX84C51
500
50
Tj = 25°C
C2V7
See Note 1
C3V3
IZ, ZENER CURRENT (mA)
Pd, Power Dissipation (mW)
400
300
200
100
0
100
0
40
20
10
Test Current IZ
5.0mA
0
1
10
2
3
4
5
6
8
9
7
VZ, ZENER VOLTAGE (V)
Fig. 2 Zener Breakdown Characteristics
Tj = 25°C
C39
IZ, ZENER CURRENT (mA)
IZ, ZENER CURRENT (mA)
C12
C15
C18
0
Test current IZ
2mA
C22
10
C27
Test current IZ
5mA
0
C33
C36
10
20
30
VZ, ZENER VOLTAGE (V)
Fig. 3 Zener Breakdown Characteristics
C6V8
0
200
C10
20
C4V7
30
Fig. 1 Power Derating Curve
Tj = 25°C
C5V6
C8V2
TA, Ambient Temperature, (°C)
30
C3V9
10
C47
C43 C51
8
6
4
Test Current IZ
2mA
2
0
40
10
20
30 40 50 60 70 80 90 100
VZ, ZENER VOLTAGE (V)
Fig. 4 Zener Breakdown Characteristics
1000
Cj, JUNCTION CAPACITANCE (pF)
Tj = 25 °C
VR = 1V
VR = 2V
100
VR = 1V
VR = 2V
10
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Fig. 5 Junction Capacitance vs Nominal Zener Voltage
DS18001 Rev. P-2
3 of 3
BZX84C2V4 - BZX84C51