BSO303SP Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature • P-Channel • Enhancement mode VDS -30 V RDS(on) 21 mΩ ID • Logic Level -8.9 A • 150°C operating temperature • Avalanche rated S 1 8 D • dv/dt rated S 2 7 D S 3 6 D G 4 5 D Top View Type Package Ordering Code BSO303SP SO 8 Q67042-S4129 SIS00062 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA=25°C -8.9 TA=70°C -7.1 Pulsed drain current ID puls Unit -35.6 TA=25°C EAS 97 mJ dv/dt -6 kV/µs Gate source voltage VGS ±20 V Power dissipation Ptot 2.35 W -55... +150 °C Avalanche energy, single pulse ID =-8.9 A , VDD =-25V, RGS =25Ω Reverse diode dv/dt IS =-8.9A, VDS =-24V, di/dt=200A/µs, Tjmax =150°C TA=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2002-01-08 BSO303SP Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 35 @ min footprint, t < 10s - - 110 @ 6 cm 2 cooling area - - 53 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -30 - - VGS(th) -1 -1.5 -2 Static Characteristics Drain-source breakdown voltage V VGS =0, ID=-250µA Gate threshold voltage, VGS = VDS ID =-100µA Zero gate voltage drain current µA IDSS VDS =-30V, VGS =0, Tj =25°C - -0.1 -1 VDS =-30V, VGS =0, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 24 31 mΩ RDS(on) - 15 21 Gate-source leakage current VGS =-20V, VDS =0 Drain-source on-state resistance VGS =-4.5V, ID =-7.3A Drain-source on-state resistance VGS =-10V, ID =-8.9A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec. Page 2 2002-01-08 BSO303SP Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 12 24 - S pF Dynamic Characteristics Transconductance gfs çVDS ç≥2*çIDç*RDS(on)max ID =-7.1A Input capacitance Ciss VGS =0, VDS =-25V, - 1754 - Output capacitance Coss f=1MHz - 465 - Reverse transfer capacitance Crss - 389 - Turn-on delay time td(on) VDD =-15V, VGS =-10V, - 10.3 15.5 Rise time tr ID =-1A, RG=6Ω - 12.5 19 Turn-off delay time td(off) - 53 80 Fall time tf - 40.3 60.5 - -4.1 -6.2 - -15.8 -26 - -46 -69 V(plateau) VDD =-24V, ID =-8.9A - -2.4 - V IS - - -3.5 A - - -35.6 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-24V, ID =-8.9A VDD =-24V, ID =-8.9A, nC VGS =0 to -10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0, |IF | = |ID | - -0.87 Reverse recovery time trr VR =-15V, |IF | = |lD |, - 25 37 ns Reverse recovery charge Qrr diF /dt=100A/µs - 11.7 17.6 nC Page 3 -1.09 V 2002-01-08 BSO303SP Preliminary data 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS |≥ 10 V 2.6 BSO303SP -10 W BSO303SP A 2.2 -8 2 -7 ID Ptot 1.8 1.6 -6 1.4 -5 1.2 1 -4 0.8 -3 0.6 -2 0.4 -1 0.2 0 0 20 40 60 80 100 °C 120 0 0 160 20 40 60 80 100 120 TA 4 Transient thermal impedance ID = f ( VDS ) ZthJS = f (tp ) parameter : D = 0 , TA = 25 °C -10 parameter : D = tp /T /I D = A S( o V 160 TA 3 Safe operating area 2 BSO303SP °C 10 2 DS BSO303SP K/W tp = 76.0µs n) 100 µs RD 10 1 -10 1 Z thJS ID 1 ms 10 ms -10 0 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 -10 -1 0.02 DC 10 -3 0.01 single pulse -10 -2 -1 -10 -10 0 -10 1 V -10 2 VDS 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2002-01-08 BSO303SP Preliminary data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS 0.1 30 Vgs = - 3V Ω Vgs = - 3.5V Vgs= - 3.5V Vgs= - 4V Vgs= - 4.5V Vgs= - 5V Vgs= - 6V Vgs= - 10V 20 RDS(on) - ID A Vgs= -3V 15 Vgs = - 4V Vgs = - 4.5V 0.08 Vgs= - 5V Vgs = - 5.5V 0.07 Vgs = - 6V Vgs = - 8V 0.06 Vgs = - 10V 0.05 0.04 10 0.03 0.02 5 Vgs= -2.5V 0.01 0 0 1 2 3 4 5 6 0 0 V 7.5 - V DS 2 4 6 8 10 12 14 16 8 Typ. forward transconductance ID= f ( VGS ); |VDS |≥ 2 x |ID| x RDS(on)max gfs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: tp = 80 µs 40 40 A S 30 30 g fs - ID 7 Typ. transfer characteristics 25 25 20 20 15 15 10 10 5 5 0 0 0.5 1 1.5 2 2.5 3 0 0 4 V - V GS Page 5 A 20 - ID 5 10 15 20 25 30 40 A - ID 2002-01-08 BSO303SP Preliminary data 9 Drain-source on-resistance 10 Typ. gate threshold voltage RDS(on) = f(Tj ) VGS(th) = f (Tj) parameter: ID = -8.9 A, VGS = -10 V parameter: VGS = VDS 2.5 30 mΩ RDS(on) max 98% 25 typ 22.5 1.5 20 typ. 1 17.5 min 15 0.5 12.5 10 -60 -20 20 60 100 °C 0 -60 160 -20 20 60 100 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0, f=1 MHz parameter: Tj , tp = 80 µs 10 4 -10 2 BSO303SP A pF Ciss C IF -10 1 10 3 Coss -10 0 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 2 0 5 10 15 20 V 30 - V DS -10 -1 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD Page 6 2002-01-08 BSO303SP Preliminary data 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ), par.: ID = -8.9 A VGS = f (QGate ) VDD = -25 V, RGS = 25 Ω parameter: ID = -8.9 A pulsed 100 -16 mJ BSO303SP V 80 VGS E AS -12 70 60 50 -10 -8 0.2 VDS max 0.5 VDS max 40 -6 0.8 VDS max 30 -4 20 -2 10 0 25 50 75 100 150 °C Tj 0 0 10 20 30 40 50 nC 70 |QGate | 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -36 BSO303SP V (BR)DSS V -34 -33 -32 -31 -30 -29 -28 -27 -60 -20 20 60 100 °C 180 Tj Page 7 2002-01-08 Preliminary data BSO303SP Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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