Vishay BYT87-800 Ultra fast recovery silicon power rectifier Datasheet

BYT87
Vishay Telefunken
Ultra Fast Recovery Silicon Power Rectifier
Features
D
D
D
D
D
Multiple diffusion
High voltage
High current
Ultra fast forward recovery time
Ultra fast reverse recovery time
14282
Applications
Fast rectifiers in S.M.P.S, freewheeling and snubber
diode in motor control circuits
Absolute Maximum Ratings
Tj = 25_C
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Peak forward surge current
Test Conditions
Type
BYT87–600
BYT87–800
BYT87–1000
tp=10ms,
half sinewave
Repetitive peak forward current
Average forward current
Junction and storage
temperature range
Symbol
VR=VRRM
VR=VRRM
VR=VRRM
IFSM
Value
600
800
1000
100
Unit
V
V
V
A
IFRM
IFAV
Tj=Tstg
30
15
–55...+150
A
A
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction case
Document Number 86038
Rev. 2, 24-Jun-98
Test Conditions
Symbol
RthJC
Value
1.6
Unit
K/W
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BYT87
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
g
Reverse current
Forward recovery time
Turn on transient peak voltage
Reverse recovery
y
characteristics
Test Conditions
IF=15A
IF=15A, Tj=100°C
VR=VRRM
VR=VRRM, Tj=100°C
IF=15A,, diF/dt 50A/ms
Type
x
IF=15A, diF/dt=–100A/ms,
VBatt=200V
IF=15A, diF/dt=–100A/ms,
VBatt=200V
IF=0.5A, IR=1A, iR=0.25A
Reverse recovery time
Symbol
VF
VF
IR
IR
tfr
VFP
IRM
tIRM
trr
Min
Typ
Max
1.8
1.8
10
0.4
Unit
V
V
mA
mA
ns
V
A
ns
ns
80
ns
350
7
10.5
110
150
trr
Characteristics (Tj = 25_C unless otherwise specified)
100
100
10
VR = VR RM
1
0.1
40
80
120
160
1
0.1
200
Tj – Junction Temperature ( °C )
94 9487
RthJC=1.6K/W
RthJA=5K/W
8
4
RthJA=10K/W
RthJA=85K/W
0
0
40
80
120
160
Tamb – Ambient Temperature ( °C )
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1.2
1.8
2.4
3.0
VF – Forward Voltage ( V )
150
120
90
60
IF = 15A
TC=25°C
VBatt=200V
30
0
200
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
0.6
Figure 3. Typ. Forward Current vs. Forward Voltage
t IRM – Reverse Recovery Time for IRM ( ns )
16
12
0
94 9489
Figure 1. Typ. Reverse Current vs. Junction Temperature
I FAV– Average Forward Current ( A )
10
0.01
0
94 9488
TCase= 25°C
IF – Forward Current ( A )
I R – Reverse Current ( mA )
1000
0
94 9490
50
100
150
200
–dIF/dt – Forward Current Rate of Change ( A/ms )
Figure 4. Reverse Recovery Time for IRM vs.
Forward Current Rate of Change
Document Number 86038
Rev. 2, 24-Jun-98
BYT87
Vishay Telefunken
250
t rr – Reverse Recovery Time ( ns )
IRM – Reverse Recovery Current ( A )
15
12
9
6
IF = 15A
TC=25°C
VBatt=200V
3
200
150
100
0
0
0
94 9491
IF = 15A
TC=25°C
VBatt=200V
50
50
100
150
200
–dIF/dt – Forward Current Rate of Change ( A/ms )
Figure 5. Reverse Recovery Current vs.
Forward Current Rate of Change
0
94 9492
50
100
150
200
–dIF/dt – Forward Current Rate of Change ( A/ms )
Figure 6. Reverse Recovery Time vs.
Forward Current Rate of Change
Dimensions in mm
14276
Document Number 86038
Rev. 2, 24-Jun-98
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BYT87
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
4 (4)
Document Number 86038
Rev. 2, 24-Jun-98
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