BYT87 Vishay Telefunken Ultra Fast Recovery Silicon Power Rectifier Features D D D D D Multiple diffusion High voltage High current Ultra fast forward recovery time Ultra fast reverse recovery time 14282 Applications Fast rectifiers in S.M.P.S, freewheeling and snubber diode in motor control circuits Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Peak forward surge current Test Conditions Type BYT87–600 BYT87–800 BYT87–1000 tp=10ms, half sinewave Repetitive peak forward current Average forward current Junction and storage temperature range Symbol VR=VRRM VR=VRRM VR=VRRM IFSM Value 600 800 1000 100 Unit V V V A IFRM IFAV Tj=Tstg 30 15 –55...+150 A A °C Maximum Thermal Resistance Tj = 25_C Parameter Junction case Document Number 86038 Rev. 2, 24-Jun-98 Test Conditions Symbol RthJC Value 1.6 Unit K/W www.vishay.de • FaxBack +1-408-970-5600 1 (4) BYT87 Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage g Reverse current Forward recovery time Turn on transient peak voltage Reverse recovery y characteristics Test Conditions IF=15A IF=15A, Tj=100°C VR=VRRM VR=VRRM, Tj=100°C IF=15A,, diF/dt 50A/ms Type x IF=15A, diF/dt=–100A/ms, VBatt=200V IF=15A, diF/dt=–100A/ms, VBatt=200V IF=0.5A, IR=1A, iR=0.25A Reverse recovery time Symbol VF VF IR IR tfr VFP IRM tIRM trr Min Typ Max 1.8 1.8 10 0.4 Unit V V mA mA ns V A ns ns 80 ns 350 7 10.5 110 150 trr Characteristics (Tj = 25_C unless otherwise specified) 100 100 10 VR = VR RM 1 0.1 40 80 120 160 1 0.1 200 Tj – Junction Temperature ( °C ) 94 9487 RthJC=1.6K/W RthJA=5K/W 8 4 RthJA=10K/W RthJA=85K/W 0 0 40 80 120 160 Tamb – Ambient Temperature ( °C ) www.vishay.de • FaxBack +1-408-970-5600 2 (4) 1.2 1.8 2.4 3.0 VF – Forward Voltage ( V ) 150 120 90 60 IF = 15A TC=25°C VBatt=200V 30 0 200 Figure 2. Max. Average Forward Current vs. Ambient Temperature 0.6 Figure 3. Typ. Forward Current vs. Forward Voltage t IRM – Reverse Recovery Time for IRM ( ns ) 16 12 0 94 9489 Figure 1. Typ. Reverse Current vs. Junction Temperature I FAV– Average Forward Current ( A ) 10 0.01 0 94 9488 TCase= 25°C IF – Forward Current ( A ) I R – Reverse Current ( mA ) 1000 0 94 9490 50 100 150 200 –dIF/dt – Forward Current Rate of Change ( A/ms ) Figure 4. Reverse Recovery Time for IRM vs. Forward Current Rate of Change Document Number 86038 Rev. 2, 24-Jun-98 BYT87 Vishay Telefunken 250 t rr – Reverse Recovery Time ( ns ) IRM – Reverse Recovery Current ( A ) 15 12 9 6 IF = 15A TC=25°C VBatt=200V 3 200 150 100 0 0 0 94 9491 IF = 15A TC=25°C VBatt=200V 50 50 100 150 200 –dIF/dt – Forward Current Rate of Change ( A/ms ) Figure 5. Reverse Recovery Current vs. Forward Current Rate of Change 0 94 9492 50 100 150 200 –dIF/dt – Forward Current Rate of Change ( A/ms ) Figure 6. Reverse Recovery Time vs. Forward Current Rate of Change Dimensions in mm 14276 Document Number 86038 Rev. 2, 24-Jun-98 www.vishay.de • FaxBack +1-408-970-5600 3 (4) BYT87 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de • FaxBack +1-408-970-5600 4 (4) Document Number 86038 Rev. 2, 24-Jun-98