ECG003 InGaP HBT Gain Block Product Features • DC – 6 GHz • +24 dBm P1dB at 1 GHz • +39 dBm OIP3 at 1 GHz • 20 dB Gain at 1 GHz • 3.6 dB Noise Figure • Available in Lead-free / green SOT-89 Package Style • Internally matched to 50 Ω Applications • • • • • Product Description Functional Diagram The ECG003 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 1000 MHz, the ECG003 typically provides 20 dB of gain, +39 dBm Output IP3, and +24 dBm P1dB. GND 4 The ECG003 consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The device is ideal for wireless applications and is available in a lowcost, surface-mount lead-free/green/RoHS-compliant SOT89 package. All devices are 100% RF and DC tested. Specifications (1) 2 3 GND RF OUT Function Input Output/Bias Ground The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the ECG003 will work for other various applications within the DC to 6 GHz frequency range such as CATV and mobile wireless. Mobile Infrastructure CATV / FTTX W-LAN / ISM RFID WiMAX / WiBro 1 RF IN Pin No. 1 3 2, 4 Typical Performance (1) Parameter Units Min Operational Bandwidth Test Frequency Gain Output P1dB Output IP3 (3) MHz MHz dB dBm dBm dB MHz dB dB dB dBm dBm dB V mA VSWR DC Noise Figure Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure Device Voltage Device Current Output mismatch w/o spurs 18 +34 6.7 Typ 1000 20 +24 +39 3.5 2000 19 15 10 +23 +36 3.6 7.2 110 10:1 Max Parameter 6000 Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure Units MHz dB dB dB dBm dBm dB Typical 500 21 -19 -14 +24.4 +39 3.5 900 20 -18 -13 +24 +39 3.5 1900 19 -16 -10 +23 +36 3.6 2140 18.7 -15 -10 +22.5 +35 3.7 7.6 1. Test conditions unless otherwise noted: 25º C, Supply Voltage = +9 V, Rbias = 16 Ω, 50 Ω System. 2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Rating Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Current Junction Temperature -40 to +85 °C -65 to +150 °C +10 dBm 160 mA +250 °C Ordering Information Part No. Description ECG003B-G InGaP HBT Gain Block ECG003B-PCB 700 –2400 MHz Fully Assembled Eval. Board (lead-free/green/RoHS-compliant SOT-89 package) Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 1 of 4 April 2007 ECG003 InGaP HBT Gain Block Typical Device RF Performance (3) Supply Bias = +9 V, Rbias = 16 Ω, Icc = 110 mA Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure MHz dB dB dB dBm dBm dB 100 21 -20 -15 +24.4 +38 3.9 500 21 -19 -14 +24.4 +39 3.6 900 20.4 -18 -13 +24 +39 3.5 1900 19 -16 -10 +23 +36 3.6 2140 18.7 -15 -10 +22.5 +35 3.7 2400 18.2 -13 -8 +20.5 +34 3.7 3500 17.4 -12 -7 +18.7 +31 4.2 5800 14 -6 -3 12 1. Test conditions: T = 25º C, Supply Voltage = +9 V, Device Voltage = 7.2 V, Rbias = 16 Ω, Icc = 110 mA typical, 50 Ω System. 2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. The performance data does not account for losses attributed to recommended input and output series resistances shown in the application circuit on page 3. Gain vs. Frequency Icc vs. Vde S11, S22 vs. Frequency 22 140 0 120 -5 Icc (mA) 100 -10 18 -15 16 -20 +25C 14 500 1000 -40C +85C 1500 2000 Frequency (MHz) 2500 0 3000 OIP3 vs. Frequency NF (dB) OIP3 (dBm) 40 35 30 1000 -40C 1 2 3 4 Frequency (GHz) 5 0 0.0 6 2.0 2500 3000 6.0 8.0 10.0 P1dB vs. Frequency 4 30 3.5 25 3 2.5 1.5 500 4.0 Vde (V) 20 15 +25C +85C 1500 2000 Frequency (MHz) +25C 40 S22 2 +25C 60 Noise Figure vs. Frequency 45 25 500 80 20 S11 -25 P1dB (dBm) Gain (dB) 20 1000 1500 Frequency (MHz) 2000 10 500 1000 -40C -85C 1500 2000 Frequency (MHz) 2500 3000 S-Parameters (Vdevice = +7.2 V, ICC = 110 mA, T = 25°C, calibrated to device leads) Freq (MHz) 50 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -20.36 -19.29 -17.78 -16.23 -14.71 -13.16 -12.14 -11.24 -10.30 -9.20 -7.76 -6.63 -5.54 -0.18 -24.13 -51.50 -75.63 -98.28 -118.71 -139.91 -161.53 174.59 147.71 120.30 92.76 70.28 20.46 20.19 19.84 19.40 19.06 18.65 18.23 17.77 17.32 16.71 15.97 14.85 13.49 177.69 157.68 136.88 117.06 97.71 78.13 59.26 40.27 20.70 0.41 -19.87 -40.81 -59.45 -23.19 -23.08 -22.93 -22.61 -22.16 -21.61 -20.91 -20.11 -19.35 -18.62 -18.16 -18.05 -18.34 -0.38 -2.33 -4.52 -7.13 -9.76 -13.40 -17.67 -23.92 -31.44 -41.28 -52.98 -66.03 -79.15 -13.95 -13.44 -12.45 -11.26 -9.96 -8.82 -7.63 -6.59 -5.32 -4.19 -3.10 -2.28 -1.78 -2.86 -35.26 -68.47 -97.26 -123.04 -145.90 -167.85 171.00 150.44 128.81 107.78 87.09 67.70 Device S-parameters are available for download off of the website at: http://www.wj.com Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 2 of 4 April 2007 ECG003 InGaP HBT Gain Block Recommended Application Circuit Vcc Icc = 110 mA R3 Bias Resistor C4 Bypass Capacitor C3 0.018 µF L1 RF Choke RF IN RF OUT ECG003B C1 Blocking Capacitor Reference Designator L1 C1, C2, C3 R1 18 Ω R2 4.7 Ω C2 Blocking Capacitor Recommended Component Values Frequency (MHz) 500 900 1900 2200 220 nH 68 nH 27 nH 22 nH 1000 pF 100 pF 68 pF 68 pF 50 820 nH .018 µF 2500 18 nH 56 pF Recommended Bias Resistor Values Supply R3 value Size Voltage 9V 16 ohms 2010 10 V 25 ohms 2512 12 V 44 ohms 2512 3500 15 nH 39 pF 1. The proper values for the components are dependent upon the intended frequency of operation. 2. The component values in the table below are contained on the evaluation board to achieve optimal broadband performance. 3. R1 and R2 are shown in the circuit diagram to avoid potential instabilities. The configuration shown above assures of unconditional stability with the use of the device. It is expected that linearity parameters (OIP3 and P1dB) to degrade about only 0.5 dB, while overall gain will be about 2 dB less than the performance shown in page 1 and 2 of this datasheet. Input and output return loss is expected to improve with the use of the I/O series resistances at 2 GHz. Ref. Desig. L1 C1, C2 C3 C4 R1 R2 R3 Value / Type 39 nH wirewound inductor 56 pF chip capacitor 0.018 µF chip capacitor Do Not Place 18 Ω chip resistor 4.7 Ω chip resistor 16 Ω 1% tolerance The proper value for R3 is dependent upon the supply voltage and allows for bias stability over temperature. WJ recommends a minimum supply bias of +9 V. A 1% tolerance resistor is recommended. Size 0603 0603 0603 0603 0603 2010 ECG003B-PCB Performance Data (WJ’s evaluation board uses the circuit shown above.) Return Loss Gain 0 20 S11 & S22 (dB) 18 16 14 12 -10 -20 S11 10 S22 -30 0 1 2 Frequency (GHz) 3 4 0 1 2 3 4 Frequency (GHz) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 3 of 4 April 2007 ECG003 InGaP HBT Gain Block ECG003B-G Mechanical Information This package is lead-free/Green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes. Outline Drawing Product Marking The component will be marked with an “E003G” designator with an alphanumeric lot code on the top surface of the package. The obsolete tin-lead package is marked with an “E003” designator followed by an alphanumeric lot code; it may also have been marked with an “8” designator followed by a 3-digit numeric lot code. Tape and reel specifications for this part are located on the website in the “Application Notes” section. Land Pattern MSL / ESD Rating ESD Rating: Value: Test: Standard: Class 1A Passes between 250 and 500V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +260 °C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Thermal Specifications Parameter Rating Operating Case Temperature Thermal Resistance, Rth -40 to +85 °C 86 °C/W Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 4 of 4 April 2007