AD ADR435BR Ultralow noise xfet voltage references with current sink and source capability Datasheet

Ultralow Noise XFET® Voltage References
with Current Sink and Source Capability
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
FEATURES
PIN CONFIGURATIONS
Low noise (0.1 Hz to 10 Hz): 3.5 µV p-p @ 2.5 V output
No external capacitor required
Low temperature coefficient
A Grade: 10 ppm/°C max
B Grade: 3 ppm/°C max
Load regulation: 15 ppm/mA
Line regulation: 20 ppm/V
Wide operating range
ADR430: 4.1 V to 18 V
ADR431: 4.5 V to 18 V
ADR433: 5.0 V to 18 V
ADR434: 6.1 V to 18 V
ADR435: 7.0 V to 18 V
ADR439: 6.5 V to 18 V
High output current: +30 mA/−20 mA
Wide temperature range: −40°C to +125°C
TP 1
ADR43x
8
TP
NC
TOP VIEW
6 VOUT
(Not to Scale)
GND 4
5 TRIM
VIN 2
7
NC = NO CONNECT
04500-0-001
NC 3
Figure 1. 8-Lead MSOP
(RM Suffix)
ADR43x
8
TP
NC
TOP VIEW
NC 3 (Not to Scale) 6 VOUT
5 TRIM
GND 4
7
NC = NO CONNECT
04500-0-041
TP 1
VIN 2
Figure 2. 8-Lead SOIC
(R Suffix)
APPLICATIONS
Precision data acquisition systems
High resolution data converters
Medical instruments
Industrial process control systems
Optical control circuits
Precision instruments
GENERAL DESCRIPTION
The ADR43x series is a family of XFET voltage references
featuring low noise, high accuracy, and low temperature drift
performance. Using ADI’s patented temperature drift curvature
correction and XFET (eXtra implanted junction FET) technology,
the ADR43x’s voltage change versus temperature nonlinearity is
minimized.
The XFET references operate at lower current (800 µA) and
supply headroom (2 V) than buried-Zener references. BuriedZener references require more than 5 V headroom for operations.
The ADR43x XFET references are the only low noise solutions
for 5 V systems.
The ADR43x series has the capability to source up to 30 mA
and sink up to 20 mA of output current. It also comes with a
TRIM terminal to adjust the output voltage over a 0.5% range
without compromising performance. The ADR43x is available
in the 8-lead mini SOIC and 8-lead SOIC packages.
All versions are specified over the extended industrial temperature range (−40°C to +125°C).
Table 1. Selection Guide
Model
ADR430B
ADR430A
ADR431B
ADR431A
ADR433B
ADR433A
ADR434B
ADR434A
ADR435B
ADR435A
ADR439B
ADR439A
VOUT (V)
2.048
2.048
2.500
2.500
3.000
3.000
4.096
4.096
5.000
5.000
4.500
4.500
Accuracy
(mV)
±1
±3
±1
±3
±1.4
±4
±1.5
±5
±2
±6
±2
±5.4
Temperature Coefficient
(ppm/°C)
3
10
3
10
3
10
3
10
3
10
3
10
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.326.8703
© 2004 Analog Devices, Inc. All rights reserved.
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
TABLE OF CONTENTS
Specifications..................................................................................... 3
Applications..................................................................................... 16
ADR430 Electrical Characteristics............................................. 3
Output Adjustment .................................................................... 16
ADR431 Electrical Characteristics............................................. 4
Reference for Converters in Optical Network Control
Circuits......................................................................................... 16
ADR433 Electrical Characteristics............................................. 5
ADR434 Electrical Characteristics............................................. 6
ADR435 Electrical Characteristics............................................. 7
ADR439 Electrical Characteristics............................................. 8
Absolute Maximum Ratings............................................................ 9
Package Type ................................................................................. 9
ESD Caution.................................................................................. 9
Typical Performance Characteristics ........................................... 10
Theory of Operation ...................................................................... 15
Basic Voltage Reference Connections...................................... 15
Noise Performance ..................................................................... 15
Negative Precision Reference without Precision Resistors ... 16
High Voltage Floating Current Source .................................... 17
Kelvin Connections.................................................................... 17
Dual Polarity References ........................................................... 17
Programmable Current Source ................................................ 18
Programmable DAC Reference Voltage .................................. 18
Precision Voltage Reference for Data Converters.................. 19
Precision Boosted Output Regulator ....................................... 19
Outline Dimensions ....................................................................... 20
Ordering Guide .......................................................................... 21
Turn-On Time ............................................................................ 15
REVISION HISTORY
9/04—Data Sheet Changed from Rev. A to Rev. B
Added New Grade ..............................................................Universal
Changes to Specifications ................................................................ 3
Replaced Figure 3, Figure 4, Figure 5........................................... 10
Updated Ordering Guide............................................................... 21
6/04—Data Sheet Changed from Rev. 0 to Rev. A
Changes to Format .............................................................Universal
Changes to the Ordering Guide.................................................... 20
12/03—Revision 0: Initial Version
Rev. B | Page 2 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
SPECIFICATIONS
ADR430 ELECTRICAL CHARACTERISTICS
VIN = 4.1 V to 18 V, ILOAD = 0 mA, TA = 25°C, unless otherwise noted.
Table 2.
Parameter
Output Voltage
B Grade
A Grade
Initial Accuracy
B Grade
B Grade
A Grade
A Grade
Temperature Coefficient
SOIC-8 (B Grade)
SOIC-8 (A Grade)
MSOP-8
Line Regulation
Load Regulation
Quiescent Current
Voltage Noise
Voltage Noise Density
Turn-On Settling Time
Long-Term Stability1
Output Voltage Hysteresis
Ripple Rejection Ratio
Short Circuit to GND
Supply Voltage Operating Range
Supply Voltage Headroom
1
Symbol
Conditions
VO
VO
Min
Typ
Max
Unit
2.047
2.045
2.048
2.048
2.049
2.051
V
V
1
0.05
3
0.15
mV
%
mV
%
1
2
2
3
10
10
ppm/°C
ppm/°C
5
20
ppm/V
15
ppm/mA
15
800
ppm/mA
µA
µV p-p
nV√Hz
µs
ppm
ppm
dB
mA
V
V
VOERR
VOERR
VOERR
VOERR
TCVO
TCVO
TCVO
∆VO/∆VIN
∆VO/∆ILOAD
IIN
eN p-p
eN
tR
∆VO
VO_HYS
RRR
ISC
VIN
VIN − VO
−40°C < TA < +125°C
−40°C < TA < +125°C
−40°C < TA < +125°C
VIN = 4.1 V to 18 V
−40°C < TA < +125°C
ILOAD = 0 mA to 10 mA, VIN = 5.0 V
−40°C < TA < +125°C
ILOAD = −10 mA to 0 mA, VIN = 5.0 V
−40°C < TA < +125°C
No load, −40°C < TA < +125°C
0.1 Hz to 10.0 Hz
1 kHz
CIN = 0
1,000 h
560
3.5
60
10
40
20
–70
40
fIN = 10 kHz
4.1
2
18
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
Rev. B | Page 3 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
ADR431 ELECTRICAL CHARACTERISTICS
VIN = 4.5 V to 18 V, ILOAD = 0 mA, TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Output Voltage
B Grade
A Grade
Initial Accuracy
B Grade
B Grade
A Grade
A Grade
Temperature Coefficient
SOIC-8 (B Grade)
SOIC-8 (A Grade)
MSOP-8
Line Regulation
Load Regulation
Quiescent Current
Voltage Noise
Voltage Noise Density
Turn-On Settling Time
Long-Term Stability1
Output Voltage Hysteresis
Ripple Rejection Ratio
Short Circuit to GND
Supply Voltage Operating Range
Supply Voltage Headroom
1
Symbol
Conditions
VO
VO
Min
Typ
Max
Unit
2.499
2.497
2.500
2.500
2.501
2.503
V
V
1
0.04
3
0.13
mV
%
mV
%
1
2
2
3
10
10
ppm/°C
ppm/°C
ppm/°C
5
20
ppm/V
15
ppm/mA
15
800
ppm/mA
µA
µV p-p
nV√Hz
µs
ppm
ppm
dB
mA
V
V
VOERR
VOERR
VOERR
VOERR
TCVO
TCVO
TCVO
∆VO/∆VIN
∆VO/∆ILOAD
IIN
eN p-p
eN
tR
∆VO
VO_HYS
RRR
ISC
VIN
VIN – VO
−40°C < TA < +125°C
−40°C < TA < +125°C
−40°C < TA < +125°C
VIN = 4.5 V to 18 V
−40°C < TA < +125°C
ILOAD = 0 mA to 10 mA, VIN = 5.0 V
−40°C < TA < +125°C
ILOAD = −10 mA to 0 mA, VIN = 5.0 V
−40°C < TA < +125°C
No load, −40°C < TA < +125°C
0.1 Hz to 10.0 Hz
1 kHz
CIN = 0
1,000 h
580
3.5
80
10
40
20
−70
40
fIN = 10 kHz
4.5
2
18
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
Rev. B | Page 4 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
ADR433 ELECTRICAL CHARACTERISTICS
VIN = 5 V to 18 V, ILOAD = 0 mA , TA = 25°C, unless otherwise noted.
Table 4.
Parameter
Output Voltage
B Grade
A Grade
Initial Accuracy
B Grade
B Grade
A Grade
A Grade
Temperature Coefficient
SOIC-8 (B Grade)
SOIC-8 (A Grade)
MSOP-8
Line Regulation
Load Regulation
Quiescent Current
Voltage Noise
Voltage Noise Density
Turn-On Settling Time
Long-Term Stability1
Output Voltage Hysteresis
Ripple Rejection Ratio
Short Circuit to GND
Supply Voltage Operating Range
Supply Voltage Headroom
Symbol
Conditions
VO
VO
Min
Typ
Max
Unit
2.9985
2.996
3.000
3.000
3.0015
3.004
V
V
1.5
0.05
4
0.13
mV
%
mV
%
1
2
2
3
10
10
ppm/°C
ppm/°C
ppm/°C
5
20
ppm/V
15
ppm/mA
15
800
ppm/mA
µA
µV p-p
nV√Hz
µs
ppm
ppm
dB
mA
V
V
VOERR
VOERR
VOERR
VOERR
TCVO
∆VO/∆VIN
∆VO/∆ILOAD
IIN
eN p-p
eN
tR
∆VO
VO_HYS
RRR
ISC
VIN
VIN − VO
−40°C < TA < +125°C
−40°C < TA < +125°C
−40°C < TA < +125°C
VIN = 5 V to 18 V
−40°C < TA < +125°C
ILOAD = 0 mA to 10 mA, VIN = 6 V
−40°C < TA < +125°C
ILOAD = −10 mA to 0 mA, VIN = 6 V
−40°C < TA < +125°C
No load, −40°C < TA < +125°C
0.1 Hz to 10.0 Hz
1 kHz
CIN = 0
1,000 h
590
3.75
90
10
40
20
−70
40
fIN = 10 kHz
5
2
1
18
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
Rev. B | Page 5 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
ADR434 ELECTRICAL CHARACTERISTICS
VIN = 6.1 V to 18 V, ILOAD = 0 mA, TA = 25°C, unless otherwise noted.
Table 5.
Parameter
Output Voltage
B Grade
A Grade
Initial Accuracy
B Grade
B Grade
A Grade
A Grade
Temperature Coefficient
SOIC-8 (B Grade)
SOIC-8 (A Grade)
MSOP-8
Line Regulation
Load Regulation
Quiescent Current
Voltage Noise
Voltage Noise Density
Turn-On Settling Time
Long-Term Stability1
Output Voltage Hysteresis
Ripple Rejection Ratio
Short Circuit to GND
Supply Voltage Operating Range
Supply Voltage Headroom
1
Symbol
Conditions
VO
VO
Min
Typ
Max
Unit
4.0945
4.091
4.096
4.096
4.0975
4.101
V
V
1.5
0.04
5
0.13
mV
%
mV
%
1
2
2
3
10
10
ppm/°C
ppm/°C
ppm/°C
5
20
ppm/V
15
ppm/mA
15
800
ppm/mA
µA
µV p-p
nV√Hz
µs
ppm
ppm
dB
mA
V
V
VOERR
VOERR
VOERR
VOERR
TCVO
∆VO/∆VIN
∆VO/∆ILOAD
IIN
eN p-p
eN
tR
∆VO
VO_HYS
RRR
ISC
VIN
VIN − VO
−40°C < TA < +125°C
−40°C < TA < +125°C
−40°C < TA < +125°C
VIN = 6.1 V to 18 V
−40°C < TA < +125°C
ILOAD = 0 mA to 10 mA, VIN = 7 V
−40°C < TA < +125°C
ILOAD = −10 mA to 0 mA, VIN = 7 V
−40°C < TA < +125°C
No load, −40°C < TA < +125°C
0.1 Hz to 10.0 Hz
1 kHz
CIN = 0
1,000 h
595
6.25
100
10
40
20
−70
40
fIN = 10 kHz
6.1
2
18
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
Rev. B | Page 6 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
ADR435 ELECTRICAL CHARACTERISTICS
VIN = 7 V to 18 V, ILOAD = 0 mA, TA = 25°C, unless otherwise noted.
Table 6.
Parameter
Output Voltage
B Grade
A Grade
Initial Accuracy
B Grade
B Grade
A Grade
A Grade
Temperature Coefficient
SOIC-8 (B Grade)
SOIC-8 (A Grade)
MSOP-8
Line Regulation
Load Regulation
Quiescent Current
Voltage Noise
Voltage Noise Density
Turn-On Settling Time
Long-Term Stability1
Output Voltage Hysteresis
Ripple Rejection Ratio
Short Circuit to GND
Supply Voltage Operating Range
Supply Voltage Headroom
1
Symbol
Conditions
VO
VO
Min
Typ
Max
Unit
4.998
4.994
5.000
5.000
5.002
5.006
V
V
2
0.04
6
0.12
mV
%
mV
%
1
2
2
3
10
10
ppm/°C
ppm/°C
ppm/°C
5
20
ppm/V
15
ppm/mA
15
800
ppm/mA
µA
µV p-p
nV/√Hz
µs
ppm
ppm
dB
mA
V
V
VOERR
VOERR
VOERR
VOERR
TCVO
∆VO/∆VIN
∆VO/∆ILOAD
IIN
eN p-p
eN
tR
∆VO
VO_HYS
RRR
ISC
VIN
VIN − VO
−40°C < TA < +125°C
−40°C < TA < +125°C
−40°C < TA < +125°C
VIN = 7 V to 18 V
−40°C < TA < +125°C
ILOAD = 0 mA to 10 mA, VIN = 8 V
−40°C < TA < +125°C
ILOAD = −10 mA to 0 mA, VIN = 8 V
−40°C < TA < +125°C
No load, −40°C < TA < +125°C
0.1 Hz to 10 Hz
1 kHz
CIN = 0
1,000 h
620
8
115
10
40
20
−70
40
fIN = 10 kHz
7
2
18
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
Rev. B | Page 7 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
ADR439 ELECTRICAL CHARACTERISTICS
VIN = 6.5 V to 18 V, ILOAD = 0 mV, TA = 25°C, unless otherwise noted.
Table 7.
Parameter
Output Voltage
B Grade
A Grade
Initial Accuracy
B Grade
B Grade
A Grade
A Grade
Temperature Coefficient
SOIC-8 (B Grade)
SOIC-8 (A Grade)
MSOP-8
Line Regulation
Load Regulation
Quiescent Current
Voltage Noise
Voltage Noise Density
Turn-On Settling Time
Long-Term Stability1
Output Voltage Hysteresis
Ripple Rejection Ratio
Short Circuit to GND
Supply Voltage Operating Range
Supply Voltage Headroom
1
Symbol
Conditions
VO
VO
Min
Typ
Max
Unit
4.498
4.4946
4.500
4.500
4.502
4.5054
V
V
2
0.04
5.4
0.12
mV
%
mV
%
1
2
2
3
10
10
ppm/°C
ppm/°C
ppm/°C
5
20
ppm/V
15
ppm/mA
15
800
ppm/mA
µA
µV p-p
nV/√Hz
µs
ppm
ppm
dB
mA
V
V
VOERR
VOERR
VOERR
VOERR
TCVO
∆VO/∆VIN
∆VO/∆ILOAD
IIN
eN p-p
eN
tR
∆VO
VO_HYS
RRR
ISC
VIN
VIN − VO
−40°C < TA < +125°C
−40°C < TA < +125°C
−40°C < TA < +125°C
VIN = 6.5 V to 18 V
−40°C < TA < +125°C
ILOAD = 0 mA to 10 mA, VIN = 6.5 V
−40°C < TA < +125°C
ILOAD = −10 mA to 0 mA, VIN = 6.5 V
−40°C < TA < +125°C
No load, −40°C < TA < +125°C
0.1 Hz to 10.0 Hz
1 kHz
CIN = 0
1,000 h
600
7.5
110
10
40
20
−70
40
fIN = 10 kHz
6.5
2
18
The long-term stability specification is noncumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
Rev. B | Page 8 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
ABSOLUTE MAXIMUM RATINGS
@ 25°C, unless otherwise noted.
Table 8.
Parameter
Supply Voltage
Output Short-Circuit Duration to GND
Storage Temperature Range (R, RM Packages)
Operating Temperature Range
Junction Temperature Range
Lead Temperature Range (Soldering, 60 s)
PACKAGE TYPE
Rating
20 V
Indefinite
−65°C to +125°C
−40°C to +125°C
−65°C to +150°C
300°C
Table 9.
Package Type
8-Lead SOIC (R)
8-Lead MSOP (RM)
1
θJA1
130
190
θJC
43
Unit
°C/W
°C/W
θJA is specified for worst-case conditions (device soldered in circuit board for
surface-mount packages).
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions beyond those indicated in the operational
sections of this specification is not implied. Absolute maximum
ratings apply individually only, not in combination.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. B | Page 9 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
TYPICAL PERFORMANCE CHARACTERISTICS
Default conditions: ±5 V, CL = 5 pF, G = 2, Rg = Rf = 1 kΩ, RL = 2 kΩ, VO = 2 V p-p, Frequency = 1 MHz, TA = 25°C.
0.8
2.5009
SUPPLY CURRENT (mA)
OUTPUT VOLTAGE (V)
2.5007
2.5005
2.5003
2.5001
2.4999
0.7
+125°C
0.6
+25°C
–40°C
0.5
0.4
–25
–10
5
20
35
50
65
80
95
110
125
TEMPERATURE (°C)
0.3
04500-0-015
4
10
12
14
16
Figure 6. ADR435 Supply Current vs. Input Voltage
4.0980
700
4.0975
650
SUPPLY CURRENT (µA)
OUTPUT VOLTAGE (V)
8
INPUT VOLTAGE (V)
Figure 3. ADR431 VOUT vs. Temperature
4.0970
4.0965
4.0960
600
550
500
450
4.0955
–25
–10
5
20
35
50
65
80
95
110
125
TEMPERATURE (°C)
400
–40
04500-0-016
4.0950
–40
6
–25
–10
5
20
35
50
65
80
95
110
125
TEMPERATURE (°C)
04500-0-019
2.4995
–40
04500-0-018
2.4997
Figure 7. ADR435 Supply Current vs. Temperature
Figure 4. ADR434 VOUT vs. Temperature
0.60
5.0025
+125°C
0.58
5.0020
SUPPLY CURRENT (mA)
5.0010
5.0005
5.0000
0.54
0.52
+25°C
0.50
0.48
0.46
–40°C
0.44
4.9995
–25
–10
5
20
35
50
65
80
95
TEMPERATURE (°C)
110
125
0.40
6
8
10
12
14
16
INPUT VOLTAGE (V)
Figure 8. ADR431 Supply Current vs. Input Voltage
Figure 5. ADR435 VOUT vs. Temperature
Rev. B | Page 10 of 24
18
04500-0-020
4.9990
–40
0.42
04500-0-017
OUTPUT VOLTAGE (V)
0.56
5.0015
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
2.5
610
DIFFERENTIAL VOLTAGE (V)
SUPPLY CURRENT (µA)
580
550
520
490
460
2.0
–40°C
1.5
+25°C
1.0
+125°C
0.5
–25
–10
5
20
35
50
65
80
95
110
125
TEMPERATURE (°C)
0
–10
04500-0-021
400
–40
–5
5
10
Figure 12. ADR431 Minimum Input/Output
Differential Voltage vs. Load Current
Figure 9. ADR431 Supply Current vs. Temperature
15
0
LOAD CURRENT (mA)
04500-0-024
430
1.9
IL = 0mA to 10mA
NO LOAD
12
MINIMUM HEADROOM (V)
LOAD REGULATION (ppm/mA)
1.8
9
6
3
1.7
1.6
1.5
1.4
1.3
1.2
–10
5
20
35
50
65
80
95
110
125
TEMPERATURE (°C)
1.0
–40
DIFFERENTIAL VOLTAGE (V)
6
3
5
20
35
50
65
80
95
110
TEMPERATURE (°C)
125
04500-0-023
LOAD REGULATION (ppm/mA)
9
–10
20
35
50
65
80
95
110
125
2.5
IL = 0mA to 10mA
–25
5
Figure 13. ADR431 Minimum Headroom vs. Temperature
12
0
–40
–10
TEMPERATURE (°C)
Figure 10. ADR431 Load Regulation vs. Temperature
15
–25
2.0
–40°C
1.5
+25°C
1.0
+125°C
0.5
0
–10
–5
0
5
LOAD CURRENT (mA)
Figure 14. ADR435 Minimum Input/Output
Differential Voltage vs. Load Current
Figure 11. ADR435 Load Regulation vs. Temperature
Rev. B | Page 11 of 24
10
04500-0-026
–25
04500-0-022
0
–40
04500-0-025
1.1
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
1.9
CLOAD = 0.01µF
NO INPUT CAPACITOR
NO LOAD
VOUT = 1V/DIV
1.5
1.3
VIN = 2V/DIV
1.1
0.9
–40
–25
–10
5
20
35
50
65
80
95
110
125
TEMPERATURE (°C)
04500-0-027
TIME = 4µs/DIV
04500-0-031
MINIMUM HEADROOM (V)
1.7
Figure 18. ADR431 Turn-On Response, 0.01 µF Load Capacitor
Figure 15. ADR435 Minimum Headroom vs. Temperature
20
VIN = 7V TO 18V
VOUT = 1V/DIV
12
8
VIN = 2V/DIV
4
TIME = 4µs/DIV
–10
5
20
35
50
65
80
95
110
125
TEMPERATURE (°C)
Figure 19. ADR431 Turn-Off Response
Figure 16. ADR435 Line Regulation vs. Temperature
CIN = 0.01µF
NO LOAD
BYPASS CAPACITOR = 0µF
LINE
INTERRUPTION
VOUT = 1V/DIV
500mV/DIV
VIN
VOUT = 50mV/DIV
VIN = 2V/DIV
TIME = 4µs/DIV
TIME = 100µs/DIV
Figure 17. ADR431 Turn-On Response
04500-0-033
–25
04500-0-028
–4
–40
04500-0-032
0
04500-0-030
LINE REGULATION (ppm/V)
16
CIN = 0.01µF
NO LOAD
Figure 20. ADR431 Line Transient Response—No Capacitors
Rev. B | Page 12 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
BYPASS CAPACITOR = 0.1µF
LINE
INTERRUPTION
500mV/DIV
VIN
VOUT = 50mV/DIV
04500-0-037
TIME = 100µs/DIV
04500-0-034
2µV/DIV
TIME = 1s/DIV
Figure 21. ADR431 Line Transient Response—0.1 µF Bypass Capacitor
Figure 24. ADR435 0.1 Hz to 10.0 Hz Voltage Noise
1µV/DIV
TIME = 1s/DIV
Figure 22. ADR431 0.1 Hz to 10.0 Hz Voltage Noise
04500-0-038
TIME = 1s/DIV
04500-0-035
50µV/DIV
Figure 25. ADR435 10 Hz to 10 kHz Voltage Noise
14
NUMBER OF PARTS
12
8
6
4
2
0
–120 –90
–70
–50
–30
–10
10
30
50
70
DEVIATION (PPM)
Figure 23. ADR431 10 Hz to 10 kHz Voltage Noise
Figure 26. ADR431 Typical Hysteresis
Rev. B | Page 13 of 24
90
120
04500-0-029
TIME = 1s/DIV
04500-0-036
50µV/DIV
10
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
50
10
45
–10
RIPPLE REJECTION (dB)
35
30
25
ADR435
20
15
ADR433
–30
–50
–70
–90
–110
10
ADR430
0
100
1k
10k
FREQUENCY (Hz)
100k
–130
–150
10
Figure 27. Output Impedance vs. Frequency
100
1k
10k
100k
FREQUENCY (Hz)
Figure 28. Ripple Rejection Ratio
Rev. B | Page 14 of 24
1M
04500-0-040
5
04500-0-039
OUTPUT IMPEDANCE (Ω)
40
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
THEORY OF OPERATION
The intrinsic reference voltage is around 0.5 V with a negative
temperature coefficient of about –120 ppm/°C. This slope is
essentially constant to the dielectric constant of silicon and can
be closely compensated by adding a correction term generated
in the same fashion as the proportional-to-temperature (PTAT)
term used to compensate band gap references. The big advantage
of an XFET reference is that the correction term is some 30 times
lower (therefore, requiring less correction) than for a band gap
reference, resulting in much lower noise, because most of the
noise of a band gap reference comes from the temperature
compensation circuitry.
The ADR43x family of references is guaranteed to deliver load
currents to 10 mA with an input voltage that ranges from 4.5 V
to 18 V. When these devices are used in applications at higher
currents, users should use the following equation to account for
the temperature effects due to the power dissipation increases.
TJ = PD × θ JA + TA
where:
TJ and TA are the junction and ambient temperatures,
respectively.
PD is the device power dissipation.
θJA is the device package thermal resistance.
BASIC VOLTAGE REFERENCE CONNECTIONS
Voltage references, in general, require a bypass capacitor
connected from VOUT to GND. The circuit in Figure 30
illustrates the basic configuration for the ADR43x family of
references. Other than a 0.1 µF capacitor at the output to help
improve noise suppression, a large output capacitor at the
output is not required for circuit stability.
Figure 29 shows the basic topology of the ADR43x series. The
temperature correction term is provided by a current source
with a value designed to be proportional to absolute temperature.
The general equation is
VOUT = G × (ΔVP − R1 × I PTAT
)
ADR43x devices are created by on-chip adjustment of R2 and
R3 to achieve 2.048 V or 2.500 V, respectively, at the reference
output.
I1
VIN
I1
ADR43x
IPTAT
VOUT
R2
*
R1
*EXTRA CHANNEL IMPLANT
VOUT = G(∆VP – R1 × IPTAT)
R3
GND
04500-0-002
∆VP
TP 1
VIN
2
10µF
+
0.1µF
ADR43x
8
TP
7
NIC
6
NIC 3 TOP VIEW
(Not to Scale)
4
(1)
where:
G is the gain of the reciprocal of the divider ratio.
∆VP is the difference in pinch-off voltage between the two JFETs.
IPTAT is the positive temperature coefficient correction current.
(2)
5
OUTPUT
TRIM
0.1µF
NIC = NO INTERNAL CONNECTION
TP = TEST PIN (DO NOT CONNECT)
04500-0-003
The ADR43x series of references uses a new reference generation
technique known as XFET (eXtra implanted junction FET).
This technique yields a reference with low supply current, good
thermal hysteresis, and exceptionally low noise. The core of the
XFET reference consists of two junction field-effect transistors
(JFETs), one of which has an extra channel implant to raise its
pinch-off voltage. By running the two JFETs at the same drain
current, the difference in pinch-off voltage can be amplified and
used to form a highly stable voltage reference.
Figure 30. Basic Voltage Reference Configuration
NOISE PERFORMANCE
The noise generated by the ADR43x family of references is
typically less than 3.75 µV p-p over the 0.1 Hz to 10.0 Hz band
for ADR430, ADR431, and ADR433. Figure 22 shows the 0.1
Hz to 10 Hz noise of the ADR431, which is only 3.5 µV p-p. The
noise measurement is made with a band-pass filter made of a
2-pole high-pass filter with a corner frequency at 0.1 Hz and a
2-pole low-pass filter with a corner frequency at 10.0 Hz.
TURN-ON TIME
Upon application of power (cold start), the time required for
the output voltage to reach its final value within a specified
error band is defined as the turn-on settling time. Two components normally associated with this are the time for the active
circuits to settle and the time for the thermal gradients on the
chip to stabilize. Figure 17 and Figure 18 show the turn-on
settling time for the ADR431.
Figure 29. Simplified Schematic Device
Power Dissipation Considerations
Rev. B | Page 15 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
APPLICATIONS
SOURCE FIBER
OUTPUT ADJUSTMENT
GIMBAL + SENSOR
ACTIVATOR
LEFT
AMPL
TRIM
AMPL
ADR431
ADR431
ADC
DAC
ADR431
DSP
GND
OUTPUT
VO = ±0.5%
Figure 32. All-Optical Router Network
R1
470kΩ
NEGATIVE PRECISION REFERENCE WITHOUT
PRECISION RESISTORS
RP
10kΩ
GND
R2
10kΩ (ADR420)
15kΩ (ADR421)
04500-0-004
ADR43x
PREAMP
CONTROL
ELECTRONICS
INPUT
VO
ACTIVATOR
RIGHT
MEMS MIRROR
DAC
VIN
DESTINATION
FIBER
LASER BEAM
04500-0-005
The ADR43x trim terminal can be used to adjust the output
voltage over a ±0.5% range. This feature allows the system
designer to trim system errors out by setting the reference to a
voltage other than the nominal. This is also helpful if the part is
used in a system at temperature to trim out any error. Adjustment
of the output has negligible effect on the temperature performance of the device. To avoid degrading temperature coefficients,
both the trimming potentiometer and the two resistors need to
be low temperature coefficient types, preferably <100 ppm/°C.
Figure 31. Output Trim Adjustment
REFERENCE FOR CONVERTERS IN OPTICAL
NETWORK CONTROL CIRCUITS
In the upcoming high capacity, all-optical router network,
Figure 32 employs arrays of micromirrors to direct and route
optical signals from fiber to fiber without first converting them
to electrical form, which reduces the communication speed.
The tiny micromechanical mirrors are positioned so that each is
illuminated by a single wavelength that carries unique information and can be passed to any desired input and output fiber.
The mirrors are tilted by the dual-axis actuators controlled by
precision ADCs and DACs within the system. Due to the
microscopic movement of the mirrors, not only is the precision
of the converters important, but the noise associated with these
controlling converters is also extremely critical, because total
noise within the system can be multiplied by the number of
converters employed. As a result, to maintain the stability of the
control loop for this application, the ADR43x is necessary due
to its exceptionally low noise.
In many current-output CMOS DAC applications where the
output signal voltage must be of the same polarity as the
reference voltage, it is often required to reconfigure a currentswitching DAC into a voltage-switching DAC through the use
of a 1.25 V reference, an op amp, and a pair of resistors. Using a
current-switching DAC directly requires an additional operational amplifier at the output to re-invert the signal. A negative
voltage reference is then desirable from the standpoint that an
additional operational amplifier is not required for either
re-inversion (current-switching mode) or amplification
(voltage-switching mode) of the DAC output voltage. In
general, any positive voltage reference can be converted into a
negative voltage reference through the use of an operational
amplifier and a pair of matched resistors in an inverting
configuration. The disadvantage to this approach is that the
largest single source of error in the circuit is the relative
matching of the resistors used.
A negative reference can easily be generated by adding a
precision op amp and configuring it as shown in Figure 33.
VOUT is at virtual ground and, therefore, the negative reference
can be taken directly from the output of the op amp. The op
amp must be dual supply, have low offset and rail-to-rail
capability, if negative supply voltage is close to the reference
output.
Rev. B | Page 16 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
VIN
RLW
2
2
VIN
VOUT
SENSE
VIN
ADR43x
RLW
A1
+
VOUT 6
6 VOUT
ADR43x
VOUT
FORCE
RL
GND
4
04500-0-008
+VDD
A1 = OP191
GND
4
A1
Figure 35. Advantage of Kelvin Connection
–VDD
04500-0-006
–VREF
A1 = OP777, OP193
DUAL POLARITY REFERENCES
Dual polarity references can easily be made with an op amp and
a pair of resistors. In order not to defeat the accuracy obtained
by ADR43x, it is imperative to match the resistance tolerance as
well as the temperature coefficient of all the components.
Figure 33. Negative Reference
HIGH VOLTAGE FLOATING CURRENT SOURCE
The circuit in Figure 34 can be used to generate a floating
current source with minimal self-heating. This particular
configuration can operate on high supply voltages determined
by the breakdown voltage of the N-channel JFET.
VIN
1µF
0.1µF
2
VOUT 6
VIN
+5V
R1
10kΩ
ADR435
U1
+VS
GND
SST111
VISHAY
R2
10kΩ
+10V
TRIM 5
V+
4
OP1177
–5V
R3
5kΩ
ADR43x
VOUT
–10V
2N3904
Figure 36. +5 V and −5 V References Using ADR435
GND
–VS
+2.5V
+10V
04500-0-007
RL
2.1kΩ
2
VIN
Figure 34. High Voltage Floating Current Source
VOUT 6
ADR435
U1
KELVIN CONNECTIONS
GND
In many portable instrumentation applications where PC board
cost and area go hand-in-hand, circuit interconnects are very
often of dimensionally minimum width. These narrow lines can
cause large voltage drops if the voltage reference is required to
provide load currents to various functions. In fact, a circuit’s
interconnects can exhibit a typical line resistance of 0.45 mΩ/
square (1 oz. Cu, for example). Force and sense connections,
also referred to as Kelvin connections, offer a convenient
method of eliminating the effects of voltage drops in circuit
wires. Load currents flowing through wiring resistance produce
an error (VERROR = R × IL) at the load. However, the Kelvin
connection of Figure 35 overcomes the problem by including
the wiring resistance within the forcing loop of the op amp.
Because the op amp senses the load voltage, the op amp loop
control forces the output to compensate for the wiring error and
to produce the correct voltage at the load.
Rev. B | Page 17 of 24
4
R1
5.6kΩ
TRIM 5
R2
5.6kΩ
V+
OP1177
–2.5V
U2
V–
04500-0-010
OP90
04500-0-009
U2
V–
VIN
–10V
Figure 37. +2.5 V and −2.5 V References Using ADR435
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
PROGRAMMABLE CURRENT SOURCE
PROGRAMMABLE DAC REFERENCE VOLTAGE
Together with a digital potentiometer and a Howland current
pump, ADR435 forms the reference source for a programmable
current as
With a multichannel DAC such as a quad 12-bit voltage output
DAC AD7398, one of its internal DACs and an ADR43x voltage
reference can be used as a common programmable VREFX for the
rest of the DACs. The circuit configuration is shown in Figure 39.
⎞
⎟
⎟ × VW
⎟
⎟
⎠
(3)
VREFA
VOUTA
R1 ± 0.1%
VREF
DAC A
and
VIN
VW =
D
×VREF
2N
VREFB
(4)
VREFC
In addition, R1′ and R2 ′ must be equal to R1 and R2A + R2B,
respectively. R2B in theory can be made as small as needed to
achieve the necessary current within the A2 output current
driving capability. In this example, OP2177 can deliver a maximum of 10 mA. Because the current pump employs both positive
and negative feedback, capacitors C1 and C2 are needed to
ensure that the negative feedback prevails and, therefore, avoids
oscillation. This circuit also allows bidirectional current flow if
the inputs VA and VB of the digital potentiometer are supplied
with the dual polarity references, as shown previously.
R1'
50kΩ
VDD
2
VREFD
ADR435
U1
GND
4
VOUT 6
VDD
C2
10pF
U2
V+
B
W
OP2177
R1
50kΩ
R2B
10Ω
VSS
VOD = VREFX (DD)
The relationship of VREFX to VREF depends on the digital code
and the ratio of R1 and R2, and is given by
R2 ⎞
VREF × ⎛⎜1 +
⎟
R1 ⎠
⎝
=
⎛1 + D × R2 ⎞
⎜
⎟
⎝ 2 N R1 ⎠
(5)
R2A
1kΩ
A1
V–
VSS
VOC = VREFX (DC)
where:
D is the decimal equivalent of input code.
N is the number of bits.
VREF is the applied external reference.
VREFX is the reference voltage for DAC A to DAC D.
OP2177
A2
V–
VOB = VREFX (DB)
Figure 39. Programmable DAC Reference
VREFX
V+
A
ADR436
AD7398
VDD
AD5232
U2
DIGITAL
POTENTIOMETER
VOUTD
DAC D
R2'
1kΩ
+
VL
–
LOAD
GND
Figure 38. Programmable Current Source
IL
04500-0-011
TRIM 5
VOUTC
DAC C
C1
10pF
VIN
VOUTB
DAC B
where:
D is the decimal equivalent of the input code.
N is the number of bits.
R2
± 0.1%
04500-0-012
⎛ R2A + R2 B
⎜
R1
IL = ⎜
R2 B
⎜
⎜
⎝
Table 10. VREFX vs. R1 and R2
R1, R2
R1 = R2
R1 = R2
R1 = R2
R1 = 3R2
R1 = 3R2
R1 = 3R2
Rev. B | Page 18 of 24
Digital Code
0000 0000 0000
1000 0000 0000
1111 1111 1111
0000 0000 0000
1000 0000 0000
1111 1111 1111
VREF
2 VREF
1.3 VREF
VREF
4 VREF
1.6 VREF
VREF
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
PRECISION BOOSTED OUTPUT REGULATOR
The ADR43x family has a number of features that make it ideal
for use with ADCs and DACs. The exceptional low noise, tight
temperature coefficient, and high accuracy characteristics make
the ADR43x ideal for low noise applications such as cellular
base station applications.
Another example of ADC for which the ADR431 is well suited
is the AD7701. Figure 40 shows the ADR431 used as the
precision reference for this converter. The AD7701 is a 16-bit
ADC with on-chip digital filtering intended for the
measurement of wide dynamic range and low frequency signals
such as those representing chemical, physical, or biological
processes. It contains a charge-balancing (Σ-∆) ADC, a
calibration microcontroller with on-chip static RAM, a clock
oscillator, and a serial communications port.
N1
VO
VIN
10µF
VOUT
AVDD
VREF
DRDV
ADR431
CS
GND
RANGES
SELECT
BP/UP
CAL
CALIBRATE
ANALOG
INPUT
AIN
ANALOG
GROUND
AGND
AVSS
0.1µF
DATA READY
READ (TRANSMIT)
SCLK
SERIAL CLOCK
SDATA
SERIAL CLOCK
CLKIN
CLKOUT
SC1
SC2
DGND
0.1µF
0.1µF
V+
AD8601
–
V–
U2
ADR431
Figure 41. Precision Boosted Output Regulator
DVSS
10µF
04500-0-013
VOUT
5
+
0.1µF
MODE
Figure 40. Voltage Reference for 16-Bit ADC AD7701
Rev. B | Page 19 of 24
25Ω
2N7002
6
DVDD
SLEEP
VIN
0.1µF
4
AD7701
RL
5V
2 U1
VIN
TRIM
GND
+5V
ANALOG
SUPPLY 0.1µF
–5V
ANALOG
SUPPLY
A precision voltage output with boosted current capability can
be realized with the circuit shown in Figure 41. In this circuit,
U2 forces VO to be equal to VREF by regulating the turn on of
N1. Therefore, the load current is furnished by VIN. In this
configuration, a 50 mA load is achievable at VIN of 5 V.
Moderate heat is generated on the MOSFET, and higher current
can be achieved with a replacement of the larger device. In
addition, for a heavy capacitive load with step input, a buffer
may be added at the output to enhance the transient response.
04500-0-014
PRECISION VOLTAGE REFERENCE FOR
DATA CONVERTERS
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
OUTLINE DIMENSIONS
3.00
BSC
8
5
4.90
BSC
3.00
BSC
4
PIN 1
0.65 BSC
1.10 MAX
0.15
0.00
0.38
0.22
COPLANARITY
0.10
0.80
0.60
0.40
8°
0°
0.23
0.08
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MO-187AA
Figure 42. 8-Lead Mini Small Outline Package [MSOP]
(RM-8)
Dimensions shown in millimeters
5.00 (0.1968)
4.80 (0.1890)
8
4.00 (0.1574)
3.80 (0.1497) 1
5
4
1.27 (0.0500)
BSC
0.25 (0.0098)
0.10 (0.0040)
6.20 (0.2440)
5.80 (0.2284)
1.75 (0.0688)
1.35 (0.0532)
0.51 (0.0201)
COPLANARITY
SEATING 0.31 (0.0122)
0.10
PLANE
0.50 (0.0196)
× 45°
0.25 (0.0099)
8°
0.25 (0.0098) 0° 1.27 (0.0500)
0.40 (0.0157)
0.17 (0.0067)
COMPLIANT TO JEDEC STANDARDS MS-012AA
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
Figure 43. 8-Lead Standard Small Outline Package [SOIC]
Narrow Body (R-8)
Dimensions shown in millimeters and (inches)
Rev. B | Page 20 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
ORDERING GUIDE
Initial
Accuracy
Model
ADR430AR
ADR430AR-REEL7
ADR430ARM
ADR430ARM-REEL7
ADR430BR
ADR430BR-REEL7
ADR431AR
ADR431AR-REEL7
ADR431ARM
ADR431ARM-REEL7
ADR431BR
ADR431BR-REEL7
ADR433AR
ADR433AR-REEL7
ADR433ARM
ADR433ARM-REEL7
ADR433BR
ADR433BR-REEL7
ADR434AR
ADR434AR-REEL7
ADR434ARM
ADR434ARM-REEL7
ADR434BR
ADR434BR-REEL7
ADR435AR
ADR435AR-REEL7
ADR435ARM
ADR435ARM-REEL7
ADR435BR
ADR435BR-REEL7
ADR439AR
ADR439AR-REEL7
ADR439ARM
ADR439ARM-REEL7
ADR439BR
ADR439BR-REEL7
Output
Voltage (VO)
2.048
2.048
2.048
2.048
2.048
2.048
2.500
2.500
2.500
2.500
2.500
2.500
3.000
3.000
3.000
3.000
3.000
3.000
4.096
4.096
4.096
4.096
4.096
4.096
5.000
5.000
5.000
5.000
5.000
5.000
4.500
4.500
4.500
4.500
4.500
4.500
mV
3
3
3
3
1
1
3
3
3
3
1
1
4
4
4
4
1.5
1.5
5
5
5
5
1.5
1.5
6
6
6
6
2
2
5.4
5.4
5.4
5.4
2
2
(%)
0.15
0.15
0.15
0.15
0.05
0.05
0.12
0.12
0.12
0.12
0.04
0.04
0.12
0.12
0.12
0.12
0.05
0.05
0.13
0.13
0.13
0.13
0.04
0.04
0.12
0.12
0.12
0.12
0.04
0.04
0.12
0.12
0.12
0.12
0.04
0.04
Temperature
Coefficient
Package
(ppm/°C)
10
10
10
10
3
3
10
10
10
10
3
3
10
10
10
10
3
3
10
10
10
10
3
3
10
10
10
10
3
3
10
10
10
10
3
3
Package
Description
8-lead SOIC
8-Lead SOIC
8-Lead MSOP
8-Lead MSOP
8-lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead MSOP
8-Lead MSOP
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead MSOP
8-Lead MSOP
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead MSOP
8-Lead MSOP
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead MSOP
8-Lead MSOP
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead MSOP
8-Lead MSOP
8-Lead SOIC
8-Lead SOIC
Rev. B | Page 21 of 24
Parts
per Reel
N/A
3,000
N/A
1,000
N/A
3,000
N/A
3,000
N/A
1,000
N/A
3,000
N/A
3,000
N/A
1,000
N/A
3,000
N/A
3,000
N/A
1,000
N/A
3,000
N/A
3,000
N/A
1,000
N/A
3,000
N/A
3,000
N/A
1,000
N/A
3,000
Branding
RHA
RHA
RJA
RJA
RKA
RKA
RLA
RLA
RMA
RMA
RNA
RNA
Temperature
Range
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
NOTES
Rev. B | Page 22 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
NOTES
Rev. B | Page 23 of 24
ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
NOTES
© 2004 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D04500–0–9/04(B)
Rev. B | Page 24 of 24