ATMEL ATA8510 Uhf ask/fsk transceiver Datasheet

ATA8510/ATA8515
UHF ASK/FSK Transceiver
DATASHEET
Features
● AVR® microcontroller core with 1Kbyte SRAM and 24Kbyte RF library in firmware
(ROM)
● Atmel® ATA8515: No user memory — RF library in firmware only
● Atmel ATA8510: 20Kbyte of user Flash
● Supported frequency ranges
● Low-band 310MHz to 318MHz, 418MHz to 477MHz
● High-band 836MHz to 956MHz
● 315.00MHz/433.92MHz/868.30MHz and 915.00MHz with one 24.305MHz crystal
● Low current consumption
● 9.8mA for RXMode (low-band), 1.2mA for 21ms cycle three-channel polling
● 9.4mA/13.8mA for TXMode (low-band, Pout = 6dBm/10dBm)
● Typical OFFMode current of 5nA (maximum 600nA at VS = 3.6V and T = 85°C)
● Programmable output power –12dBm to +14.5dBm (0.4dB step)
● Supports the 0dBm class of ARIB STD-T96
● ASK shaping to reduce spectral bandwidth of modulated PA output signal
● Input 1dB compression point
● –48dBm (full sensitivity level)
● –20dBm (active antenna damping)
● Programmable channel frequency with fractional-N PLL
● 93Hz resolution for low-band
● 185Hz resolution for high-band
● FSK deviation ±0.375kHz to ±93kHz
● FSK sensitivity (Manchester coded) at 433.92MHz
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–108.5dBm at 20Kbit/s
–111dBm at 10Kbit/s
–114dBm at 5Kbit/s
–122.5dBm at 0.75Kbit/s
f = ±20kHz
f = ±10kHz
f = ±5kHz
f = ±0.75kHz
BWIF = 165kHz
BWIF = 165kHz
BWIF = 165kHz
BWIF = 25kHz
● ASK sensitivity (Manchester coded) at 433.92MHz
● –110.5dBm at 20Kbit/s
● –125dBm at 0.5Kbit/s
BWIF = 80kHz
BWIF = 25kHz
● Programmable Rx-IF bandwidth 25kHz to 366kHz (approximately 10% steps)
9315G-INDCO-08/15
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Blocking (BWIF = 165kHz): 64dBc at frequency offset = 1MHz and 48dBc at 225kHz
High image rejection: 55dB at 315MHz/433.92MHz and 47dB at 868.3MHz/915MHz without calibration
Supported data rate in buffered mode 0.5Kbit/s to 80Kbit/s (120Kbit/s NRZ)
Supports pattern-based wake-up and start of frame identification
Flexible service configuration concept with on-the-fly (OTF) modification (in IDLEMode) of SRAM service parameters
(data rate, …)
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Each service consists of
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One service-specific configuration part
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Three channel-specific configuration parts
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Three service configurations are located in EEPROM
●
Two service configurations are located in SRAM and can be modified via SPI or embedded application
software
Digital RSSI with very high relative accuracy of ±1dB thanks to digitized IF processing
Programmable clock output derived from crystal frequency
1024byte EEPROM data memory for transceiver configuration
SPI interface for Rx/Tx data access and transceiver configuration
500Kbit SPI data rate for short periods on SPI bus and host controller
On demand services (SPI or API) without polling or telegram reception
Integrated temperature sensor
Self check and calibration with temperature measurement
Configurable EVENT signal indicates the status of the IC to an external microcontroller
Automatic antenna tuning at Tx center frequency for loop antenna
Automatic low-power channel polling
Flexible polling configuration concerning timing, order and participating channels
Fast Rx/Tx reaction time
Power-up (typical 1.5ms OFFMode -> TXMode, OFFMode -> RXMode)
RXMode <-> TXMode switching (typical 500µs)
Supports mixed ASK/FSK telegrams
Non-byte aligned data reception and transmission
Software customization
Antenna diversity with external switch via GPIO control
Antenna diversity with internal SPDT switch
Supply voltage range 1.9V to 3.6V
Temperature range –40°C to +85C
ESD protection at all pins (±4kV HBM, ±200V MM, ±750V FCDM)
Small 55mm QFN32 package/pitch 0.5mm
Suitable for applications governed by EN 300 220 and FCC part 15, title 47
Applications
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Remote Control System
Home and Building Automation
Wireless Sensor Networks
Weather stations
Battery operated remote controls
Smoke detectors
Wireless alarm and security systems
ATA8510/ATA8515 [DATASHEET]
9315G–INDCO–08/15
1.
General Description
1.1
Introduction
The Atmel® ATA8510/15 is a highly integrated, low-power UHF ASK/FSK RF transceiver with an integrated AVR®
microcontroller.
The Atmel ATA8510/15 is partitioned into three sections; an RF front end, a digital baseband and the low-power 8-bit AVR
microcontroller. The product is designed for the ISM frequency bands in the ranges of 310MHz to 318MHz, 418MHz to
477MHz and 836MHz to 956MHz. The external part count is kept to a minimum due to the very high level of integration in
this device. By combining outstanding RF performance with highly sophisticated baseband signal processing, robust
wireless communication can be easily achieved. The receive path uses a low-IF architecture with an integrated double
quadrature receiver and digitized IF processing. This results in high image rejection and excellent blocking performance. The
transmit path uses a closed loop fractional-N modulator with Gauss shaping and pre-emphasis functionality for high data
rates. In addition, highly flexible and configurable baseband signal processing allows the transceiver to operate in several
scanning, wake-up and automatic self-polling scenarios. For example, during polling the IC can scan for specific message
content (IDs) and save valid telegram data in the FIFO buffer for later retrieval. The device integrates two receive paths that
enable a parallel search for two telegrams with different modulations, data rates, wake-up conditions, etc.
The Atmel ATA8510/15 implements a flexible service configuration concept and supports up to 15 channels. The channels
are grouped into five service configurations with three channels each. Three service configurations are located in the
EEPROM. Two service configurations are located in the SRAM to allow on-the-fly modifications during IDLEMode via SPI
commands or application software. The application software is located in the Flash for Atmel ATA8510. Highly configurable
and autonomous scanning capability enables flexible polling scenarios with up to 15 channels. The configuration of the
transceiver is stored in a 1024byte EEPROM. The SPI interface enables external control and device reconfiguration.
Table 1-1.
Program Memory Comparison of Atmel ATA8510/15 Devices
Device
Atmel Firmware ROM
User Flash
User ROM
Atmel ATA8515
24Kbyte
-
-
Atmel ATA8510
24Kbyte
20Kbyte
-
In the Atmel ATA8510 the internal microcontroller with 20Kbyte user flash can be used to add custom extensions to the
Atmel firmware. The Atmel ATA8515 embeds only the firmware ROM without user memory.
The debugWIRE and ISP interface are available for programming purposes.
ATA8510/ATA8515 [DATASHEET]
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1.2
System Overview
Figure 1-1. Circuit Overview
SRC, FRC
Oscillators
Supply
Reset
AVR CPU
EEPROM
Tx DSP
Flash
RF_OUT
ROM
RF
Front End
SRAM
AVR
Peripherals
Rx DSP
RFIN
DATA BUS
XTO
XTAL
Port B (8)
Port C (6)
PB[7..0]
(SPI)
PC[5..0]
Figure 1-1 shows an overview of the main functional blocks of the Atmel® ATA8510/15. External control of the
Atmel ATA8510/15 is performed through the SPI pins SCK, MOSI, MISO, and NSS on port B. The configuration of the
Atmel ATA8510/15 is stored in the EEPROM and a large portion of the functionality is defined by the firmware located in the
ROM and processed by the AVR®. An SPI command can trigger the AVR to configure the hardware according to settings
that are stored in the EEPROM and start up a given system mode (e.g., RXMode, TXMode or PollingMode). Internal events
such as “Start of Telegram” or “FIFO empty” are signaled to an external microcontroller on pin 28 (PB6/EVENT).
During the start-up of a service, the relevant part of the EEPROM content is copied to the SRAM. This allows faster access
by the AVR during the subsequent processing steps and eliminates the need to write to the EEPROM during runtime
because parameters can be modified directly in the SRAM. As a consequence the user does not need to observe the
EEPROM read/write cycle limitations.
It is important to note that all PWRON and NPWRON pins (PC1..5, PB4, PB7) are active in OFFMode. This means that even
if the Atmel ATA8510/15 is in OFFMode and the DVCC voltage is switched off, the power management circuitry within the
Atmel ATA8510/15 biases these pins with VS.
AVR ports can be used as button inputs, external LNA supply voltage (RX_ACTIVE), LED drivers, EVENT pin, switching
control for additional SPDT switches, general purpose digital inputs, or wake-up inputs, etc. Some functionality of these ports
is already implemented in the firmware and can be activated by adequate EEPROM configurations. Other functionality is
available only through custom software residing in the 20Kbyte flash program memory (Atmel ATA8510).
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ATA8510/ATA8515 [DATASHEET]
9315G–INDCO–08/15
Pinning
RFIN_LB
ATEST_IO1
ATEST_IO2
AGND
PB7
PB6
PB5
PB4
PB3
Figure 1-2. Pin Diagram
32
31
30
29
28
27
26
25
1
RFIN_HB
2
SPDT_RX
3
exposed die pad
Atmel
ATA8510
ATA8515
24
PB2
23
PB1
22
PB0
21
DGND
20
DVCC
PC5
RF_OUT
7
18
PC4
VS_PA
8
17
PC3
9
10
11
12
13
14
15
16
PC2
19
PC1
6
PC0
SPDT_TX
VS
5
AVCC
ANT_TUNE
XTAL2
4
XTAL1
SPDT_ANT
TEST_EN
1.3
Note:
The exposed die pad is connected to the internal die.
Table 1-2.
Pin Description
Pin
No.
Pin Name
Type
1
RFIN_LB
Analog
Equivalent Circuit
Description
RFIN_LB
(Pin 1)
LNA input for low-band frequency
range (< 500MHz)
GND
2
RFIN_HB
Analog
RFIN_HB
(Pin 2)
LNA input for high-band frequency
range (> 500MHz)
GND
ATA8510/ATA8515 [DATASHEET]
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Table 1-2.
Pin Description (Continued)
Pin
No.
Pin Name
Type
3
SPDT_RX
Analog
Equivalent Circuit
Description
SPDT_ANT
(Pin 4)
SPDT_RX
(Pin 3)
800kΩ
4
SPDT_ANT
85Ω
Antenna input (RXMode) and
output (TXMode) of the SPDT
switch
Analog
75Ω
GND
GND
Rx switch output (damped signal
output)
75Ω
GND
ANT_TUNE
(Pin 5)
5
ANT_TUNE
Analog
Antenna tuning input
GND
GND
See also circuit pin 3 and pin 4
6
SPDT_TX
Analog
7
RF_OUT
Analog
SPDT_TX
(Pin 6)
SPDT_ANT
(Pin 4)
VS_PA (Pin 8)
VS (Pin 13)
100kΩ
REF (3V)
TXMode input of the SPDT switch
Power amplifier output
RF_OUT
(Pin 7)
+
-
8
VS_PA
Analog
Power amplifier supply, connect to
VS
VS_PA ON
GND
6
ATA8510/ATA8515 [DATASHEET]
9315G–INDCO–08/15
GND
Table 1-2.
Pin
No.
Pin Description (Continued)
Pin Name
Type
Equivalent Circuit
TEST_EN
(Pin 9)
Description
AVCC
(Pin 12)
DVCC
(Pin 20)
VS
(Pin 13)
20kΩ
9
TEST_EN
20kΩ
–
Test enable, connected to GND in
application
100kΩ
GND
10
XTAL1
Analog
GND
XTAL1
(Pin 10)
DGND
DGND
GND
XTAL2
(Pin 11)
Crystal oscillator pin 1 (input)
180kΩ
11
XTAL2
14pF
Analog
GND
12
AVCC
13
VS
Analog See Section 4.1 on page 22 and pins 7, 8, and 9
Main supply voltage input
Digital
15
PC1
Digital
16
PC2
Digital
18
19
PC4
PC5
GND
RF front end supply regulator
output
PC0
PC3
GND
Crystal oscillator pin 2 (output)
Analog See Section 4.1 on page 22
14
17
14pF
Digital
Digital
Digital
Main
: AVR Port C0
Alternate
: PCINT8 / NRESET /
DebugWIRE
Main
: AVR Port C1
Alternate
: NPWRON1 /
PCINT9 / EXT_CLK
Main
: AVR Port C2
Alternate
: NPWRON2 /
PCINT10 / TRPA
Main
: AVR Port C3
Alternate
: NPWRON3 /
PCINT11 / TMDO /
TxD
Main
: AVR Port C4
Alternate
: NPWRON4 /
PCINT12 / INT0 /
TMDI / RxD
Main
: AVR Port C5
Alternate
: NPWRON5 /
PCINT13 / TRPB /
TMDO_CLK
ATA8510/ATA8515 [DATASHEET]
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Table 1-2.
Pin
No.
Pin Name
Type
20
DVCC
21
Equivalent Circuit
Description
–
See Section 4.1 on page 22
Digital supply voltage regulator
output
DGND
–
See Section 4.1 on page 22
Digital ground
22
PB0
Digital
23
PB1
Digital
24
25
PB2
PB3
Digital
Digital
26
PB4
Digital
27
PB5
Digital
28
8
Pin Description (Continued)
PB6
Digital
Main
: AVR Port B0
Alternate
: PCINT0 / CLK_OUT
Main
: AVR Port B1
Alternate
: PCINT1 / SCK
Main
: AVR Port B2
Alternate
: PCINT2 / MOSI
(SPI Master Out
Slave In)
Main
: AVR Port B3
Alternate
: PCINT3 / MISO
(SPI Master In Slave
Out)
Main
: AVR Port B4
Alternate
: PWRON / PCINT4 /
LED1 (strong high
side driver)
Main
: AVR Port B5
Alternate
: PCINT5 / INT1 / NSS
Main
: AVR Port B6
Alternate
: PCINT6 / EVENT
(firmware controlled
external microcontroller event flag)
Main
: AVR Port B7
Alternate
: NPWRON6/ PCINT7/
RX_ACTIVE (strong
high side driver) /
LED0 (strong low
side driver)
29
PB7
Digital
30
AGND
–
31
ATEST_IO2
–
RF front end test I/O 2
connected to GND in application
32
ATEST_IO1
–
RF front end test I/O 1
connected to GND in application
GND
–
See Section 4.1 on page 22
See Section 4.1 on page 22
ATA8510/ATA8515 [DATASHEET]
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Analog ground
Ground/backplane on exposed die
pad
1.4
Typical Applications
1.4.1
Typical 3V Application with External Microcontroller
Figure 1-3. Typical 3V Application with External Microcontroller
IRQ
NSS
MISO
25
PB3
26
PB4
27
24
PB2
23
2
Optional
Harmonic Filter
PB1
RFIN_HB
22
3
PB0
SPDT_RX
Atmel
ATA8510
ATA8515
4
SPDT_ANT
5
ANT_TUNE
20
DVCC
SPDT_TX
PC5
19
RF_OUT
PC4
18
VS_PA
PC3
17
9
11
12
13
14
15
PC2
PC1
PC0
VS
AVCC
XTAL2
XTAL1
10
CLK_IN
DGND
7
TEST
_EN
SCK
21
6
8
MOSI
Microcontroller
RFIN_LB
28
PB5
ATEST ATEST
_IO1 _IO2
29
PB6
30
PB7
1
31
AGND
32
16
Wake/Monitor
VS = 3V
VDD
Figure 1-3 shows a typical application circuit with an external host microcontroller for the 315MHz or 433.92MHz band
running from a 3V lithium cell. The Atmel® ATA8510/15 stays in OFFMode until NPWRON1 (PC1) is used to wake it up. In
OFFMode the Atmel ATA8510/15 draws typically less than 5nA (600nA maximum at 3.6V/85°C).
In OFFMode all Atmel ATA8510/15 AVR® ports PB0..PB7 and PC0..PC5 are switched to input. PC0..PC5 and PB7 have
internal pull-up resistors ensuring that the voltage at these ports is VS. PB0..PB6 are tri-state inputs and require additional
consideration. PB1, PB2, and PB5 have defined voltages since they are connected to the output of the external
microcontroller. PB4 is connected to ground to avoid unwanted power-ups. PB0, PB3 and PB6 do not require external
circuitry since the internal circuit avoids transverse currents in OFFMode. The external microcontroller has to tolerate the
floating inputs. Otherwise additional pull-down resistors are required on these floating lines.
Typically, the key fob buttons are connected to the external microcontroller and the Atmel ATA8510/15 wake-up is done by
pulling NPWRON1 (pin 15) to ground. If there are not enough ports for button inputs on the microcontroller, it is possible to
connect up to four additional buttons to the ports PC2..PC5. In this case, the occurrence of a port event (button pressed)
generates an event on pin 28. The corresponding port event is available in the event registers.
A PCB trace loop antenna is typically used in this type of application. An internal antenna tuning procedure tunes the
resonant frequency of this loop antenna to the Tx frequency. This is accomplished with an integrated variable capacitor on
the ANT_TUNE pin. RF_OUT and RF_IN are optimally matched to the SPDT_TX and SPDT_RX pins of the integrated
Rx/Tx switch. The SPDT_ANT pin has an impedance of 50 for both the Rx and Tx functions. The DC output voltage of the
power amplifier is required at the SPDT_TX pin for proper operation. Also, the RFIN pin needs a DC path to ground, which is
easily achieved with the matching shunt inductor. The impedance of the loop antenna is transformed to 50 with three
capacitors, two of them external and one built-in at the ANT_TUNE pin.
ATA8510/ATA8515 [DATASHEET]
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Together with the fractional-N PLL within the Atmel® ATA8510/15, an external crystal is used to fix the Rx and Tx frequency.
Accurate load capacitors for this crystal are integrated to reduce the system part count and cost. Only four supply blocking
capacitors are needed to decouple the different supply voltages AVCC, DVCC, VS, and VS_PA of the Atmel ATA8510/15.
The exposed die pad is the RF and analog ground of the Atmel ATA8510/15. It is connected directly to AGND via a fused
lead. For applications operating in the 868.3MHz or 915MHz frequency bands a high-band RF input, RFIN_HB, is supplied
and must be used instead of RFIN_LB. The Atmel ATA8510/15 is controlled using specific SPI commands via the SPI
interface, and an internal EEPROM for application specific configurations.
1.4.2
Typical 3V Stand-Alone Application
Figure 1-4. Typical 3V Stand-alone Application
VS
VS
RFIN_LB
25
PB3
26
PB4
28 27
PB5
29
PB6
30
PB7
1
31
AGND
32
ATEST TEST
_IO1 _IO2
24
PB2
2
23
RFIN_HB
PB1
SPDT_RX
PB0
3
4
21
Atmel
ATA8510
SPDT_ANT
5
ANT_TUNE
DGND
20
DVCC
6
19
SPDT_TX
PC5
RF_OUT
PC4
VS_PA
PC3
7
18
9
10
11
12
13
14 15
PC2
PC1
PC0
VS
AVCC
TEST
_EN
XTAL2
17
XTAL1
8
22
16
VS
VS = 3V
Figure 1-4 shows a stand-alone key fob application circuit for 315MHz or 433.92MHz running from a 3V lithium cell. The
Atmel ATA8510/15 stays in OFFMode until one of the NPWRON ports PC1..PC5 is pulled to ground level, waking up the
circuit. The NPWRON ports PC1..PC5 have internal 50k pull-up resistors and can be left open if not used.
The user application software within the 20Kbyte Flash (Atmel ATA8510) is used to control the Atmel ATA8510/15
transceiver together with the firmware in the 24Kbyte ROM. The Atmel ATA8515 is not suitable for this application. The RF
and decoupling circuitry is similar to Figure 1-3 on page 9.
In this application, an LED is connected to PB7. Alternatively, an additional wake-up button can be used on PB7 instead of
an LED. An LED can also be connected to PB4. However, note the additional pull-down resistor connected in parallel that is
needed to prevent transverse currents in OFFMode. This special case only applies to PB4 because of its active input
characteristics (PWRON).
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ATA8510/ATA8515 [DATASHEET]
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2.
System Functional Description
2.1
Overview
2.1.1
Service-based Concept
The Atmel® ATA8510/15 is a highly configurable UHF transceiver. The configuration is stored in an internal 1024-byte
EEPROM. The master system control is performed by firmware. General chip-wide settings are loaded from the EEPROM to
hardware registers during system initialization. During start-up of a transmit or receive mode the specific settings are loaded
from the EEPROM or SRAM to the current service in the SRAM and from there to the corresponding hardware registers.
A complete configuration set of the transceiver is called “service” and includes RF settings, demodulation settings, and
telegram handling information. Each service contains three channels which differ in the RF receive or transmit frequencies.
The Atmel ATA8510/15 supports five services which can be configured in various ways to meet customer requirements.
Three service configurations are located in the EEPROM space. They are fixed configurations which should not be changed
during runtime.
Two service configurations are located in the SRAM space and can be modified by USER SW in a Flash application or by an
SPI command during IDLEMode.
A service consists of
● One service-specific configuration part
●
Three channel-specific configuration parts
Further configurations for PollingMode and RSSI are available and can be modified in IDLEMode via an SPI command
and/or User SW.
Figure 2-1 gives an overview on the service based-concept.
Figure 2-1. Service-based Concept Overview
EEPROM
SRAM
EEPROM Polling Configuration
eepPollLoopConf
System
Initialization
SRAM Polling Configuration
pollConfig
Service 0
eepServices [0]
Channel 0
Channel 1
Service 3
sramServices [0]
Channel 2
Channel 0
Service 1
eepServices [1]
Channel 0
Channel 1
Channel 1
Channel 2
SPI
Service 4
sramServices [1]
Channel 2
Channel 0
Service 2
eepServices [2]
Channel 0
Channel 1
Channel 1
Channel 2
RSSI Threshold Configuration
for Each Channel
rssiThreshold [][]
Channel 2
Service S
currentService
Channel
Atmel ATA8510/15 Hardware
ATA8510/ATA8515 [DATASHEET]
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2.1.2
Supported Telegrams
2.1.2.1 Telegram Structure
The Atmel® ATA8510/15 supports the transmission and reception of a wide variety of telegrams and protocols. Generally no
special structure is required from a telegram to be received or transmitted by the Atmel ATA8510/15. However, designated
hardware and software features are built in for the blocks that are depicted in Figure 2-2. Using this structure or parts of it
can increase the sensitivity and robustness of the broadcast.
Figure 2-2. Telegram Structure
Desync
Preamble
Data Payload
Checksum
Stop Sequence
Desync:
The de-synchronization is usually a coding violation with a length of several symbols that should provoke a defined restart of
the receiver. The use of a de-synchronization leads to more deterministic receiver behavior, reducing the required preamble
length. This can be favorable in timing-critical and energy-critical applications.
Preamble:
The preamble is a pattern that is sent before the actual data payload to synchronize the receiver and provide the starting
point of the payload. A very regular pattern (e.g., 1-0-1-0...) is recommended for synchronization (“wake-up pattern, WUP”,
sometimes also called “pre-burst”) while a unique, well-defined pattern of up to 32 symbols is required to mark the start of
the data payload (“start frame identifier, SFID” or “start bit”). In polling scenarios the WUP can be tens or hundreds of ms
long.
Data Payload:
The data payload contains the actual information content of the telegram. It can be NRZ or Manchester-coded. The length of
the payload is application dependent, typically 1..64 bytes.
Checksum:
A checksum can be calculated across the data payload to verify that the data have been received correctly. A typical
example is an 8-bit CRC checksum. Data bits at the beginning of the payload can be excluded from the CRC calculation.
Stop Sequence:
The stop sequence is a short data pattern (typically 2 to 6 symbols) to mark the end of the telegram. A coding violation can
be used to prevent additional (non-deterministic) data from being received.
2.1.2.2 NRZ and Manchester Coding
Within this document the following wording is used:
The expression data “bit” describes the real information content that is to be broadcast. This information can be coded in
“symbols” (sometimes also called “chips”) which are then physically transmitted from sender to receiver. The receiver has to
decode the “symbols” back into data “bits” to access the information. The “symbol rate” is therefore always greater or equal
to the “bit rate”.
The Atmel ATA8510/15 supports two coding modes: Manchester coding and non-return-to-zero (NRZ) coding.
NRZ coding is implemented in a straightforward manner: One bit is represented by one symbol.
Manchester coding implements two symbols per data bit. There is always a transition between the two symbols of one data
bit so that one data bit always consists of a “0” and a “1”. The polarity can be either way as shown in Figure 2-3 on page 13.
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ATA8510/ATA8515 [DATASHEET]
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Figure 2-3. Manchester Code
Clock
Data
1
0
1
1
0
0
0
1
0
1
0
0
Manchester
(e.g., IEEE 802.3)
Manchester
(inverse)
Manchester coding has many advantages such as simple clock recovery, no DC component, and error detection by code
violation. Drawbacks are the coding/decoding effort and the increased symbol rate which is twice the data rate.
2.2
Operating Modes Overview
This section gives an overview of the operating modes supported by the Atmel® ATA8510/15 as shown in Figure 2-4.
Figure 2-4. Operating Modes Overview
OFFMode
Power-on
Invalid
wake-up
WDR
EXTR
Init fails
System Initialization
TCMode
Init done
System Error Loop
IDLEMode
PollingMode
TXMode
RXMode
ATA8510/ATA8515 [DATASHEET]
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13
After connecting the supply voltage to the VS pin, the Atmel ATA8510/15 always starts in OFFMode. All internal circuits are
disconnected from the power supply. Therefore, no SPI communication is supported. The Atmel ATA8510/15 can be woken
up by activating the PWRON pin or one of the NPWRONx pins. This triggers the power-on sequence. After the system
initialization the Atmel ATA8510/15 reaches the IDLEMode.
The IDLEMode is the basic system mode supporting SPI communication and transitions to all other operating modes. There
are two options of the IDLEMode requiring configuration in the EEPROM settings:
● IDLEMode(RC) with low power consumption using the fast RC (FRC) oscillator for processing
●
IDLEMode(XTO) with active crystal oscillator for high accuracy clock output or timing measurements
The transmit mode (TXMode) enables data transmission using the selected service/channel configurations. It is usually
enabled by the SPI command “Set System Mode”, or directly after power-on, when selected in the EEPROM setting.
The receive mode (RXMode) provides data reception on the selected service/channel configuration. The precondition for
data reception is a valid preamble. The receiver continuously scans for a valid telegram and receives the data if all preconfigured checks are successful. The RXMode is usually enabled by the SPI command “Set System Mode”, or directly after
power-on, when selected in the EEPROM setting.
In PollingMode the receiver is activated for a short period of time to check for a valid telegram on the selected
service/channel configurations. The receiver is deactivated if no valid telegram is found and a sleep period with very low
power consumption elapses. This process is repeated periodically in accordance with the polling configuration. The initial
settings are stored in the EEPROM and copied during firmware initialization to the SRAM. This allows modification of the
PollingMode timing and service/channel configuration during IDLEMode.
The tune and check mode (TCMode) offers calibration and self-checking functionality for the VCO, and FRC oscillators as
well as for antenna tuning, temperature measurement, and polling cycle accuracy. This mode is activated via the SPI
command “Calibrate and Check”. When selected in the EEPROM settings, tune and check tasks are also used during
system initialization after power-on. Furthermore, they can also be activated periodically during PollingMode.
Table 2-1 shows the relations between the operating modes and their corresponding power supplies, clock sources, and
sleep mode settings.
Table 2-1.
Operation Mode
AVR Sleep Mode
DVCC
AVCC
XTO
OFFMode
-
IDLEMode(RC)
Active mode
Power-down(1)
off
off
off
off
off
off
off
off
off
on
on
on
off
IDLEMode(XTO)
Active mode
Power-down(1)
on
on
on
on
on
on
off
off
TXMode
Active mode
on
on
on
off
RXMode
Active mode
on
on
on
off
PollingMode(RC)
- Active period
- Sleep period
Active mode
Power-down(1)
on
off
on
off
on
on
on
off
PollingMode(XTO)
- Active period
- Sleep period
Active mode
Power-down(1)
on
on
on
on
on
on
off
off
Notes:
14
Operating Modes versus Power Supplies and Oscillators
1.
on
SRC
FRC
During IDLEMode(RC) and IDLEMode(XTO) the AVR® microcontroller enters sleep mode to reduce current
consumption. The sleep mode of the microcontroller section can be defined in the EEPROM. The power-down
mode is recommended for keeping current consumption low.
ATA8510/ATA8515 [DATASHEET]
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3.
Hardware
3.1
Overview
The Atmel® ATA8510/15 consists of an analog front end, digital signal processing blocks (DSP), an 8-bit AVR® sub-system
and various supply modules such as oscillators and power regulators. A hardware block diagram of the Atmel ATA8510/15 is
shown in Figure 3-1.
Figure 3-1. Block Diagram
AVCC
Sequencer
State
Machine
RF Front End
Front-end
Registers
RFIN_LB
LNA, Mixer
IF AMP
16 Bit Sync
Timer
Damping
ANT_TUNE
Antenna
Tuning
VS_PA
Voltage
Monitor
Clock
Management
Debug
Wire
Rx DSP
Power
Amplifier
Support
FIFO
8 Bit
Async
Timers 2x
AVR CPU
Data
FIFO
SPDT
SPDT_ANT
RF_OUT
Supplies
and
Reset
D
Temp (ϑ)
SPDT_TX
Watchdog
Timer
DVCC
AVR SubSystem
A
RFIN_HB
SPDT_RX
SRC, FRC
Oscillators
VS
Tx
Modulator
NVM Controller
16 Bit
Async
Timers
2x
ROM
24kB
IRQ
Fractional
N-PLL
Flash
20kB
EEPROM
1152B
SRAM
1kByte
CRC
Tx DSP
DATA BUS
XTO
XTAL1
XTAL2
Port B (8)
SPI
Port C (6)
PB[7:0]
PC[5:0]
Together with the fractional-N PLL, the crystal oscillator (XTO) generates the local oscillator (LO) signal for the mixer in
RXMode. The RF signal comes either from the low-band input (RFIN_LB) or from the high-band input (RFIN_HB) and is
amplified by the low-noise amplifier (LNA) and down-converted by the mixer to the intermediate frequency (IF) using the LO
signal. A 10dB IF amplifier with low-pass filter characteristic is used to achieve enhanced system sensitivity without affecting
blocking performance.
After the mixer, the IF signal is sampled using a high-resolution analog-to-digital converter (ADC).
Within the Rx digital signal processing (Rx DSP) the received signal from the ADC is filtered by a digital channel filter and
demodulated. Two data receive paths, path A and path B, are included in the Rx DSP after the digital channel filter.
In addition, the receive path can be configured to provide the digital output of an internal temperature sensor (Temp()).
ATA8510/ATA8515 [DATASHEET]
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15
In TXMode the fractional-N PLL generates the Tx frequency. The power amplifier (PA) generates an RF output power signal
programmable from –10dBm to +14dBm at RF_OUT. The FSK modulation is performed by changing the frequency setting of
the fractional-N PLL dynamically with Tx digital signal processing (Tx DSP). Digital preemphasis and digital Gauss filtering
can be activated in the Tx DSP in order to achieve higher data rates or reduce occupied bandwidth. The ASK modulation is
performed by switching the power amplifier on and off. An ASK shaping filter is available to reduce the transmitted bandwidth
of the modulated PA output signal. The shaping filter can also be used at the start and end of an FSK transmission.
With the single pole double throw (SPDT) switch the RF signal from the antenna is switched to RFIN in RXMode and from
RF_OUT to the antenna in TXMode. An adjustable capacitor and an RF level detector on ANT_TUNE are used to tune the
center frequency of loop antennas to reduce tolerances and capacitive proximity effects.
The system is controlled by an AVR® CPU with 24KB firmware ROM and 20KB user flash for the Atmel® ATA8510.
1024-byte EEPROM, 1024-byte SRAM, and other peripherals are supporting the transceiver handling. Two GPIO ports,
PB[7:0] and PC[5:0], are available for external digital connections, for example, as an alternate function the SPI interface is
connected to port B. The Atmel ATA8510/15 is controlled by the EEPROM configuration and SPI commands and the
functional behavior is mainly determined by firmware in the ROM. Much of the configuration can be modified by the
EEPROM settings. The firmware running on the AVR gives access to the hardware functionality of the Atmel ATA8510/15.
Extensions to this firmware can be added in the 20KB of Flash memory for the Atmel ATA8510. The Rx DSP and Tx DSP
registers are addressed directly and accessible from the AVR. A set of sequencer state machines is included to perform Rx
and Tx path operations (such as enable, disable, receive, transmit) which require a defined timing parallel to the AVR
program execution.
The power management contains low-dropout (LDO) regulators and reset circuits for the supply voltages VS, AVCC and
DVCC, of the Atmel ATA8510/15. In OFFMode all the supply voltages AVCC and DVCC, are switched off to achieve very
low current consumption. The Atmel ATA8510/15 can be powered up by activating the PWRON pin or one of the
NPWRON[6:1] pins because they are still active in OFFMode. The AVCC domain can be switched on and off independently
from DVCC. The Atmel ATA8510/15 includes two idle modes. In IDLEMode(RC) only the DVCC voltage regulator, the FRC
and SRC oscillators are active and the AVR uses a power-down mode to achieve low current consumption. The same
power-down mode can be used during the inactive phases of the PollingMode. In IDLEMode(XTO) the AVCC voltage
domain as well as the XTO are additionally activated.
An integrated watchdog timer is available to restart the Atmel ATA8510/15 when it is not served within the configured timeout period.
3.2
Receive Path
3.2.1
Overview
The receive path consists of a low-noise amplifier (LNA), mixer, IF amplifier, analog-to-digital converter (ADC), and an Rx
digital signal processor (Rx DSP). The fractional-N PLL and the XTO deliver the local oscillator frequency in RXMode. The
receive path is controlled by the RF front-end registers.
Two separate LNA inputs, one for low-band and one for high-band, are provided to obtain optimum performance matching
for each frequency range and to allow multi-band applications. A radio frequency (RF) level detector at the LNA output and a
switchable damping included into the single-pole double-trough (SPDT) switch is used in the presence of large blockers to
achieve enhanced system blocking performance.
The mixer converts the received RF signal to a low intermediate frequency (IF) of about 250kHz. A double-quadrature
architecture is used for the mixer to achieve high image rejection. Additionally, the third-order suppression of the local
oscillator (LO) harmonics makes receiving without a front-end SAW filter less critical, such as in a car key fob application.
An IF amplifier provides additional gain and improves the receiver sensitivity by 2-3dB. Because of built-in filter function, the
in-band compression is degraded by 10dB, while the out-of-band compression remains unchanged.
The ADC converts the IF signal into the digital domain. Due to the high effective resolution of the ADC, the channel filter and
received signal strength indicator (RSSI) can be realized in the digital signal domain. Therefore, no analog gain control
(AGC) potentially leading to critical timing issues or analog filtering is required in front of the ADC. This leads to a receiver
front end with excellent blocking performance up to the 1dB compression point of the LNA and mixer, and a steep digital
channel filter can be used.
The Rx DSP performs the channel filtering and converts the digital output signal of the ADC to the baseband for
demodulation. Due to the digital realization of these functions the Rx DSP can be adapted to the needs of many different
applications. Channel bandwidth, data rate, modulation type, wake-up criteria, signal checks, clock recovery, and many
other properties are configurable. The RSSI value is realized completely in the digital signal domain, enabling very high
relative and absolute accuracy that is only deteriorated by the gain errors of the LNA, mixer, and ADC.
16
ATA8510/ATA8515 [DATASHEET]
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Two independent receive paths A and B are integrated in the Rx DSP after the channel filter and allow the use of different
data rates, modulation types, and protocols without the need to power up the receive path more than once to decide which
signal should be received. This results in a reduced polling current in several applications.
The integration of remote keyless entry (RKE), passive entry and go (PEG) and tire-pressure monitoring systems (TPM) into
one module is simplified because completely different protocols can be supported and a low polling current is achieved. It is
even possible to configure different receive RF bands for different applications by using the two LNA inputs. For example, a
TPM receiver can be realized at 433.92MHz while a PEG system uses the 868MHz ISM band with multi-channel
communication.
3.2.2
Rx Digital Signal Processing (Rx DSP)
The Rx digital signal processing (DSP) block performs the digital filtering, decoding, checking, and byte-wise buffering of the
Rx samples that are derived from the ADC as shown in Figure 3-2. The Rx DSP provides the following outputs:
● Raw demodulated data at the TRPA/B pins
●
●
●
Decoded data at the TMDO and TMDO_CLK pins
Buffered data bytes toward the data FIFO and ID check block
Auxiliary information about the signal such as the received signal strength indication (RSSI) and the frequency offset
of the received signal from the selected center frequency (RXFOA/B)
Figure 3-2. Rx DSP Overview
RXFOA
ADC
Data
Channel
Filter
Demod
&
Check
TRPA
TMDO_A
TMDO_CLK_A
Frame
Sync A
Path
A
Rx
Buffer A
Data
Byte
=
Data
FIFO
Frame
Sync B
Path
B
Rx
Buffer B
Data
Byte
=
RSSI
RXFOB
RSSI
Buffer
TRPB
Support
FIFO
TMDO_B
TMDO_CLK_B
ID
Check
=
The channel filter determines the receiver bandwidth. Its output is used for both receiving paths A and B, making it
necessary to configure the filter to match both paths. The receiving paths A and B are identical and consist of an ASK/FSK
demodulator with attached signal checks, a frame synchronizer which supports pattern-based searches for the telegram
start and a 1-byte hardware buffer with integrated CRC checker for the received data.
Depending on the signal checks, one path is selected which writes the received data to the data FIFO and optionally to the
ID check block.
The RSSI values are determined by the demodulator and written via the RSSI buffer to the support FIFO where the latest
16 values are stored for further processing.
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17
3.3
Transmit Path
The Atmel® ATA8510/15 integrates a transmitter that is capable of sending data with various options:
● Frequency bands 310MHz to 318MHz, 418MHz to 477MHz, 836MHz to 956MHz
●
●
●
●
●
Data rates up to 80kBit/s Manchester or 120Ksym/s NRZ in buffered and transparent mode
ASK or FSK modulation
Transparent or buffered mode
ASK shaping filter
Gauss-shaping digital filter
This section describes the hardware blocks that are integrated to perform the transmit functionality.
Figure 3-3 shows a block diagram of the transmit data path.
Figure 3-3. Transmit Data Path
TX DSP
Analog Frontend
FFREQ2
FSCR. TXMOD
Pin 18/ TMDI
TX Modulator
Configuration Registers
00
01
10
11
FSK
ASK
1
0
1
Gauss
Filter
0
0
CRC
DFIFO
Stop Sequ
Shift Register
Manch.
Code
Preemphasis
Filter
1
PLL
0
Power
Amp
RFOUT
FFREQ1
Control State Machine
SFIFO
1
on/off
1
ASK
Shaping
Filter
0
The transmission data source can be selected from a register bit, the transparent input pin 18 (TMDI), and the Tx modulator
that fetches the data from the DFIFO and SFIFO.
If ASK/OOK modulation is selected, the data stream is used to directly switch the power amplifier on and off. The transmitted
carrier frequency is set by the PLL frequency synthesizer.
If FSK modulation is selected, the data stream is used to switch between two frequencies that are generated by the PLL
frequency synthesizer. The power amplifier is constantly on. Power ramping (ASK shaping) can be used during on and off
switching. To reduce the occupied bandwidth a digital Gauss-shaping filter can be enabled. For data rates above 20kHz
Manchester or 40kHz NRZ-coding a digital preemphasis filter has to be enabled to compensate for the PLL loop filter.
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3.4
AVR Controller
3.4.1
AVR Controller Sub-System
The AVR® controller sub-system consists of the AVR CPU core, its program memory, and a data bus with data memory and
peripheral blocks attached. The receive path and the transmit path also have their user interfaces connected to the data bus.
CPU Core
The main function of the CPU core is to ensure correct program execution. For this reason, the CPU core must be able to
access memories, perform calculations, control peripherals, and handle interrupts.
Figure 3-4. Overview of Architecture
Data Bus 8-bit
ROM
Flash
Program
Memory
Program
Counter
Status and
Control
32 x 8
General
Purpose
Registers
Instruction
Register
Interrupt
Unit
SPI
Unit
Instruction
Decoder
Control Lines
Indirect Addressing
Watchdog
Timer
Direct Addressing
3.4.2
ALU
Clock
Management
I/O Module 1
Data
SRAM
I/O Module n
EEPROM
PortN
In order to maximize performance and parallelism, the AVR uses a Harvard architecture—with separate memories and
buses for program and data. Instructions in the program memory are executed with single-level pipelining. While one
instruction is being executed, the next instruction is prefetched from the program memory. This concept enables instructions
to be executed in every clock cycle. The program memory is in-system reprogrammable Flash memory and ROM.
The fast-access register file contains 32  8-bit general purpose working registers with a single clock cycle access time.
This allows a single-cycle arithmetic and logic unit (ALU) operation. In a typical ALU operation, two operands are output from
the register file, the operation is executed, and the result is stored back in the register file - in one clock cycle.
Six of the 32 registers can be used as three 16-bit indirect address register pointers for data space addressing, enabling
efficient address calculations. One of these address pointers can also be used as an address pointer for lookup tables in the
Flash program memory. Referred to as ‘X,’ ‘Y,’ and ‘Z’ registers, these higher 16-bit function registers are described later in
this section.
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19
The ALU supports arithmetic and logic operations between registers or between a constant and a register. Single register
operations can also be executed in the ALU. After an arithmetic operation, the status register is updated to reflect
information about the result of the operation.
The program flow is provided by conditional and unconditional jump and call instructions which are able to directly address
the entire address space. Most AVR® instructions have a single 16-bit word format. Every program memory address
contains a 16- or 32-bit instruction.
The program memory space is divided in two sections, the boot program section and the application program section. Both
sections have dedicated lock bits for write and read/write protection. The store program memory (SPM) instruction that
writes into the application Flash memory section must reside in the boot program section.
During interrupts and subroutine calls, the return address of the program counter (PC) is stored on the stack. The stack is
effectively allocated in the general data SRAM—the stack size is thus only limited by the total SRAM size and the usage of
the SRAM. All user programs must initialize the stack pointer (SP) in the reset routine before subroutines or interrupts are
executed. The SP is read/write accessible in the I/O space. The data SRAM can easily be accessed through the five different
addressing modes supported in the AVR architecture.
The memory spaces in the AVR architecture are all linear and regular memory maps.
A flexible interrupt module has its control registers in the I/O space with an additional global interrupt enable bit in the status
register. All interrupts have a separate interrupt vector in the interrupt vector table. The interrupts have priority in accordance
with their interrupt vector position. The lower the interrupt vector address, the higher the priority.
The I/O memory space contains 64 addresses for CPU peripheral functions as control registers, SPI, and other I/O functions.
The I/O memory can be accessed directly, or as the data space locations following those of the register file, 0x20 - 0x5F. In
addition, the circuit has extended I/O space from 0x60 - 0x1FF and SRAM where only the ST/STS/STD and LD/LDS/LDD
instructions can be used.
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ATA8510/ATA8515 [DATASHEET]
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3.5
Power Management
The IC has four power domains:
1. VS
– Unregulated battery voltage input
2.
DVCC
– Internally regulated digital supply voltage. Typical value is 1.35V.
3.
AVCC
– Internally regulated RF front end and XTO supply. Typical value is 1.85V.
®
The Atmel ATA8510/15 can be operated from VS= 1.9V to 3.6V.
Figure 3-5.
Power Supply Management
2.2µF
220nF
22nF
AVCC
VS
DVCC
Power Management (common reference, Voltage Monitor)
VS_PA regulator
DVCC regulator
AVCC regulator
Data Bus
RFIN_LB
RFIN_HB
AVR CPU, AVR peripherals,
Memories, RxDSP, TxDSP
and FRC/SRC
SPDT_RX
SPDT_ANT
ANT_TUNE
RF front end
and XTO
SPDT_TX
RF_OUT
Port B
PB7
XTAL1
... Level shifter
SPI
PB4
XTAL2
VS
Port C
PC5
...
PC1
...
ATA8510/ATA8515 [DATASHEET]
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21
4.
Electrical Characteristics
4.1
ESD Protection Circuits
GND is the exposed die pad of the Atmel® ATA8510/15 which is internally connected to AGND (pin 30). All zener diodes
shown in Figure 4-1 (marked as power clamps) are realized with dynamic clamping circuits and not physical zener diodes.
Therefore, DC currents are not clamped to the shown voltages.
Figure 4-1. Atmel ATA8510/15 ESD Protection Circuit
RFIN_LB
(Pin 1)
XTAL1
(Pin 10)
RFIN_HB
(Pin 2)
XTAL2
(Pin 11)
AVCC
(Pin 12)
VS
(Pin 13)
ATEST_IO2
(Pin 31)
ATEST_IO1
(Pin 32)
Power
Clamp
1.8V
AGND
(Pin 30)
GND
GND
GND
GND
GND
VS_PA (Pin 8)
GND
VS (Pin 13)
125kΩ
ANT_TUNE
(Pin 5)
SPDT_RX
(Pin 3)
SPDT_ANT
(Pin 4)
SPDT_TX
(Pin 6)
RF_OUT
(Pin 7)
Power
Clamp
3.3V
TEST_EN
(Pin 9)
Power
Clamp
3.3V
Power
Clamp
3.3V
GND
VS (Pin 13)
DVCC (Pin 20)
Power
Clamp
1.8V
PC0 to PC5
(Pin 14 to Pin 19)
DGND
(Pin 21)
22
ATA8510/ATA8515 [DATASHEET]
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PB0 to PB7
(Pin 22 to Pin 29)
Power
Clamp
5.5V
GND
4.2
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Symbol
Min.
Max.
Unit
+150
°C
–55
+125
°C
Junction temperature
Tj
Storage temperature
Tstg
Ambient temperature
Tamb
–40
+85
°C
VVS
–0.3
4.0
V
Supply voltage PA (1.9..3.6V application)
VVS_PA
–0.3
4.0
V
Maximum input level (input matched to 50Ω)
Pin_max
+10
dBm
Supply voltage
ESD (Human Body Model) all pins
HBM
–4
+4
kV
ESD (Machine Model) all pins
MM
–200
+200
V
FCDM
–750
+750
V
4.0
Vp
–0.3
VS + 0.3
V
–0.3
VS + 0.3
V
ESD (Field Induced Charged Device Model) all pins
(1)
Maximum RF amplitude at pin 5 (ANT_TUNE)
Maximum peak voltage at pin 4 (SPDT_ANT)
(1)
ANTTUNE
SPDTANT
Maximum peak voltage at pin 6 (SPDT_TX)(1)
SPDTTX
Note:
1. Customer application needs to be designed properly
4.3
Thermal Resistance
Parameters
Thermal Resistance, Junction Ambient, Soldered
according to JEDEC
Symbol
Value
Unit
Rth_JA
35
K/W
ATA8510/ATA8515 [DATASHEET]
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23
4.4
Supply Voltages and Current Consumption
All parameters refer to GND (backplane) and are valid for Tamb = –40°C to +85°C, VVS = 1.9V to 3.6V over all process tolerances
unless otherwise specified. Typical values are given at VVS = 3V, Tamb = 25°C, and for a typical process unless otherwise specified.
Crystal oscillator frequency fXTO = 24.305MHz. Standard Atmel® EEPROM settings are used unless marked with *1.
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
1.00
Supply voltage range
VS
3V application *1
13
VVS
1.9
3.0
3.6
V
A
1.05
Supply voltage rise
time
13
VVS_rise
1
V/µs
D
1.10
Supply voltage range
VS_PA
3V application *1
8
VVS_PA
3
3.6
V
A
1.20
OFFMode
Current consumption
3V application *1
Tamb = 25°C
Tamb = 85°C
8, 13
IOFFMode_3V
5
150
600
nA
nA
B
B
1.30
IDLEMode(RC)
Current consumption
SRC active, AVR in
power-down mode,
temperature range
–40°C to +65°C
13
IIDLEMode(RC)
50
90
μA
B
1.40
IDLEMode(XTO)
Current consumption
XTO active, AVR in
power-down mode
13
IIDLEMode(XTO)
250
400
μA
B
IDLEMode(XTO)
Current consumption
With active CLK_OUT
fXTO/6 = 4.05MHz
CLOAD_CLK_OUT = 10pF
VVS = 3.6V
AVR running with
fXTO/4 = 6.076MHz
13, 22
IIDLEMode(XTO)
1.3
2.5
mA
B
RXMode
Current consumption
AVR running with
fXTO/4
fRF = 315MHz *1
fRF = 433.92MHz
fRF = 868.3MHz *1
fRF = 915MHz *1
9.2
9.8
10.4
10.5
12.7
13.2
14.6
14.7
8.9
9.4
11.5
11.7
11
12
14.5
15
13.1
13.8
17.4
17.4
17
18.5
22.5
23
24.3
26.3
32.7
33.5
33
36
45
46
1.60
1.80
_CLK_OUT2
13
IRXMode1
VVS = 3V
Pout = +6dBm
fRF = 315MHz *1
fRF = 433.92MHz
fRF = 868.3MHz *1
fRF = 915MHz *1
2.00
TXMode
Current consumption
Pout = +10dBm *1
fRF = 315MHz *1
fRF = 433.92MHz
fRF = 868.3MHz *1
fRF = 915MHz *1
Pout = +14dBm *1
fRF = 315MHz *1
fRF = 433.92MHz
fRF = 868.3MHz *1
fRF = 915MHz *1
1.9
(7), 8,
13
ITXMode
mA
B
B
B
B
mA
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Pin number in brackets mean, that they are measured matched to 50 on the application board.
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ATA8510/ATA8515 [DATASHEET]
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B
A
A
B
B
B
B
B
B
B
B
B
4.5
RF Receiving Characteristics
All parameters refer to GND (backplane) and are valid for Tamb = –40°C to +85°C, VVS = 1.9V to 3.6V over all process tolerances
unless otherwise specified. Typical values are given at VVS = 3V, Tamb = 25°C, and for a typical process unless otherwise specified.
Crystal oscillator frequency fXTO = 24.305MHz. Standard Atmel EEPROM settings are used unless marked with *1.
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
Frequency Ranges and Frequency Resolution of PLL for RXMode, TXMode and PollingMode
3.00
RF operating
frequency range
315MHz low-band
FECR.LBNHB = ’1’
FECR.S4N3 = ’0’
1, 7
fRange_LB1_315
310
315
318
MHz
A
3.10
RF operating
frequency range
433MHz low-band
FECR.LBNHB = ’1’
FECR.S4N3 = ’1’
1, 7
fRange_LB2_433
418
433.92
477
MHz
B
3.30
RF operating
frequency range
High-band
FECR.LBNHB = ’0’
FECR.S4N3 = ’0’
2, 7
fRange_B4_868
836
868.3
956
MHz
B
3.40
Frequency resolution
PLL
Low-band fXTO/218
High-band fXTO/217
1, 2, 7
DFPLL
Hz
B
B
kHz
B
Kbit/s
B
B
B
B
B
B
92.72
185.43
RXMode and PollingMode Receive Characteristics
IF bandwidth specifications are examples usable for parameter extrapolation if other IF bandwidth values are used
4.00
Receiver 3dB
bandwidth
Programmable digital
IF filter
4.10
at 25kHz IF-BW
at 50kHz IF-BW
ASK and FSK
at 80kHz IF-BW
transparent mode data
at 165kHz IF-BW
rate Manchester mode
at 237kHz IF-BW
at 366kHz IF-BW
1, 2
4.20
=
frequency_deviation
Modulation index FSK
/ symbol_rate
recommended
1, 2
1, 2
BWIF
25
366
DRTM
0.25
7
14
20
50
80
80

0.5
0.75
1
360
1.25
B
B
±9
±18
±26
±60
±93
±93
B
B
B
B
B
B
Maximum usable
frequency deviation is
baseband clock
dependant
fDEV_Max = CLK_BB/8
4.30
Frequency deviation
at 25kHz IF-BW
at 50kHz IF-BW
at 80kHz IF-BW
at 165kHz IF-BW
at 237kHz IF-BW
at 366kHz IF-BW
1, 2
fDEV
±0.375
±0.75
±1.2
±2.5
±3.5
±5.4
kHz
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Pin number in brackets mean, that they are measured matched to 50 on the application board.
ATA8510/ATA8515 [DATASHEET]
9315G–INDCO–08/15
25
4.5
RF Receiving Characteristics (Continued)
All parameters refer to GND (backplane) and are valid for Tamb = –40°C to +85°C, VVS = 1.9V to 3.6V over all process tolerances
unless otherwise specified. Typical values are given at VVS = 3V, Tamb = 25°C, and for a typical process unless otherwise specified.
Crystal oscillator frequency fXTO = 24.305MHz. Standard Atmel EEPROM settings are used unless marked with *1.
No.
Parameters
Test Conditions
Pin
Symbol
Min.
4.40
ASK and FSK
transparent mode
symbol rate NRZ
mode
Used to receive NRZ,
Keyloq, PPM, 1/3 2/3
Coded telegrams
at 25kHz IF-BW
at 50kHz IF-BW
at 80kHz IF-BW
at 165kHz IF-BW
at 237kHz IF-BW
at 366kHz IF-BW
1, 2
SRTM_OPT
0.5
4.70
Data rate tolerance
FSK and ASK
Loss of sensitivity <1dB
1, 2
DRTOL
–10
+10
%
B
Buffered data rate
Manchester and NRZ
mode
TMDO output will be
buffered internally and
readout via SPI
interface
Manchester mode
NRZ mode
1, 2
DRBuffered
0.25
0.5
80
120
Kbit/s
Ksym/s
B
B
FSK at 25kHz IF
bandwidth Tamb = 25°C
0.75Kbit/s ±0.75kHz
5Kbit/s ±2.4kHz
(1),
17, 19
FSK at 80kHz IF
bandwidth Tamb = 25°C
2.4Kbit/s ±2.4kHz
20Kbit/s ±20kHz
(1),
17, 19
FSK at 165kHz IF
bandwidth Tamb = 25°C
5Kbit/s ±5kHz
40Kbit/s ±40kHz
(1),
17, 19
FSK at 366kHz IF
bandwidth Tamb = 25°C
20Kbit/s ±20kHz
80Kbit/s ±80 kHz
(1),
17, 19
4.80
4.90
FSK
Sensitivity level
315MHz/
433.92MHz
5.00
5.10
5.20
Manchester encoded
Receiving 100bit
Packets with 9 of 10
Packets Error Free
or
BER = 10^-3
Continuous RX
measured at TMDO
output or buffered via
SPI for DR < DRBuffered
Typ.
Max.
14
28
40
100
160
160
Unit
Ksym/s
ATA8510/ATA8515 [DATASHEET]
9315G–INDCO–08/15
B
B
B
B
B
B
SFSKB25_R0.75
SFSKB25_R5_2.4
–3dB
–122.5
–113.5
+3dB
dBm
B
B
SFSKB80_R2_4
SFSKB80_R20
–3dB
–117
–108.5
+3dB
dBm
B
B
SFSKB165_R5
SFSKB165_R40
–3dB
–114
–105.5
+3dB
dBm
B
B
SFSKB366_R20
SFSKB366_R80
–3dB
–107.5
–100.5
+3dB
dBm
B
B
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Pin number in brackets mean, that they are measured matched to 50 on the application board.
26
Type*
4.5
RF Receiving Characteristics (Continued)
All parameters refer to GND (backplane) and are valid for Tamb = –40°C to +85°C, VVS = 1.9V to 3.6V over all process tolerances
unless otherwise specified. Typical values are given at VVS = 3V, Tamb = 25°C, and for a typical process unless otherwise specified.
Crystal oscillator frequency fXTO = 24.305MHz. Standard Atmel EEPROM settings are used unless marked with *1.
No.
5.30
Parameters
ASK
Sensitivity level
315MHz/
433.92MHz
5.40
5.50
5.60
Manchester encoded
Receiving 100bit
Packets with 9 of 10
Packets Error Free
or
BER = 10^-3
Continuous RX
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Type*
SASKB25_R0_5
SASKB25_R5
–3dB
–125
–117.5
+3dB
dBm
B
B
SASKB80_R1
SASKB80_R20
–3dB
–121.5
–110.5
+3dB
dBm
B
B
SASKB165_R1
SASKB165_R40
–3dB
–120.5
–107.5
+3dB
dBm
B
B
SASKB366_R1
SASKB366_R80
–3dB
–118.5
–103.5
+3dB
dBm
B
B
(2)
SHB
1
1
1
dB
B
(1)
(2)
STamb_LB
STamb_HB
–1.5
–2
2
3
dB
dB
C
C
SNRZ
–1
0
2
4
dB
C
C
ASK at 25kHz IF
bandwidth (100% ASK
level of carrier value)
Tamb = 25°C
0.5Kbit/s
5Kbit/s
(1),
17, 19
ASK at 80kHz IF
bandwidth (100% ASK
level of carrier value)
Tamb = 25°C
1Kbit/s
20Kbit/s
(1),
17, 19
ASK at 165kHz IF
bandwidth (100% ASK
level of carrier value)
Tamb = 25°C
1Kbit/s
40Kbit/s
(1),
17, 19
measured at TMDO
output or buffered via ASK at 366kHz IF
SPI for DR < DRBuffered bandwidth (100% ASK
level of carrier value)
Tamb = 25°C
1Kbit/s
80Kbit/s
5.70
Sensitivity change
High-band
High-band 868.3MHz
compared to low-band
sensitivity to be added
to min/typ/max values
of parameters no. 4.90
to 5.60
5.80
Sensitivity change
Full ambient
temperature range
Tamb =
–40°C to +85°C
Low-band *1
High-band
S = SFSK_ASK + S
Sensitivity change
NRZ
Compared to
Machester
NRZ using no more
than 8 succeeding ‘0’
or ‘1’ symbols
FSK
ASK
S = SFSK_ASK + S
5.90
Pin
(1),
17, 19
(1, 2)
0
2
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Pin number in brackets mean, that they are measured matched to 50 on the application board.
ATA8510/ATA8515 [DATASHEET]
9315G–INDCO–08/15
27
4.5
RF Receiving Characteristics (Continued)
All parameters refer to GND (backplane) and are valid for Tamb = –40°C to +85°C, VVS = 1.9V to 3.6V over all process tolerances
unless otherwise specified. Typical values are given at VVS = 3V, Tamb = 25°C, and for a typical process unless otherwise specified.
Crystal oscillator frequency fXTO = 24.305MHz. Standard Atmel EEPROM settings are used unless marked with *1.
No.
6.00
Parameters
Test Conditions
Sensitivity change
TRPA/B raw data
Compared to matched
filter TMDO signal on
pin 17, Manchester
encoded
ASK
FSK
S = SFSK_ASK + S
Pin
(1, 2),
16, 17,
19
Symbol
Min.
Typ.
dB
C
6
6
dB
D
dBc
C
C
C
C
C
C
C
dBc
C
C
C
C
C
C
dBc
C
C
C
C
C
dBc
C
C
C
C
6.30
To calculate OOK
values from ASK 100%
level of carrier values
Example: 2.4Kbit at
165kHz IF bandwidth
ASK: 100% level of
Carrier –117dBm =
OOK: –111dBm
SOOK = SASK + 
(1, 2)
OOK
(1, 2)
fdist. ≥ 50kHz
fdist. ≥ 100kHz
fdist. ≥ 225kHz
fdist. ≥ 450kHz
fdist. ≥ 1MHz
fdist. ≥ 4MHz
fdist. ≥ 10MHz
40
46
58
64
73
78
78
(1, 2)
fdist. ≥ 150kHz
fdist. ≥ 225kHz
fdist. ≥ 450kHz
fdist. ≥ 1MHz
fdist. ≥ 4MHz
fdist. ≥ 10MHz
45
52
58
67
71
71
(1, 2)
fdist. ≥ 225kHz
fdist. ≥ 450kHz
fdist. ≥ 1MHz
fdist. ≥ 4MHz
fdist. ≥ 10MHz
48
54
64
68
68
(1, 2)
fdist. ≥ 500kHz
fdist. ≥ 1MHz
fdist. ≥ 4MHz
fdist. ≥ 10MHz
55
64
68
68
Manchester encoded
useful signal level
increased 3dB above
sensitivity level
7.00
7.10
7.20
blocking measured
relative to useful
signal level
Receiving 100bit
Packets with 9 of 10
Packets Error Free
or
BER = 10^-3
Continuous RX
Excluding spurious
receiving frequencies
At 80kHz IF bandwidth,
FSK,
Tamb = 25°C
10Kbit/s ± 10kHz
At 165kHz IF
bandwidth, FSK,
Tamb = 25°C
20Kbit/s ± 20kHz
At 366kHz IF
bandwidth, FSK,
Tamb = 25°C
20Kbit/s ± 20kHz
6
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Pin number in brackets mean, that they are measured matched to 50 on the application board.
28
ATA8510/ATA8515 [DATASHEET]
9315G–INDCO–08/15
B
B
3
S:fdevM_3
6.90
dB
2
(1, 2)
At 25kHz IF bandwidth,
FSK,
Tamb = 25°C
2.4Kbit/s ± 2.4kHz
Type*
2.5
1.5
6.20
315MHz/ 433MHz
blocking
Unit
SRAW_DATA
Configured for
maximum fDEVM.
Sensitivity change for
sensitivity degradation
frequency deviations
at fDEVM / 3 compared
lower than configured
to fDEVM
S = SFSK_ASK + S
Value change from
ASK level to OOK
level
Max.
4.5
RF Receiving Characteristics (Continued)
All parameters refer to GND (backplane) and are valid for Tamb = –40°C to +85°C, VVS = 1.9V to 3.6V over all process tolerances
unless otherwise specified. Typical values are given at VVS = 3V, Tamb = 25°C, and for a typical process unless otherwise specified.
Crystal oscillator frequency fXTO = 24.305MHz. Standard Atmel EEPROM settings are used unless marked with *1.
No.
Parameters
868MHz/ 915MHz
blocking
7.30
Manchester encoded
useful signal level
increased 3dB above
unblocked sensitivity
level
7.40
7.50
7.60
7.70
7.80
blocking measured
relative to useful
signal level
Receiving 100 Bit
Packets with 9 of 10
Packets Error Free
or
BER = 10^-3
Continuous RX
Excluding spurious
receiving frequencies
Test Conditions
At 25kHz IF bandwidth,
FSK,
Tamb = 25°C
2.4Kbit/s ± 2.4kHz
At 80kHz IF bandwidth,
FSK,
Tamb = 25°C
10Kbit/s ± 10kHz
At 165kHz IF
bandwidth, FSK,
Tamb = 25°C
20Kbit/s ± 20kHz
At 366kHz IF
bandwidth, FSK,
Tamb = 25°C
20Kbit/s ± 20kHz
Image rejection
Low-band
High-band
no adaptive algorithm
used, therefore,
numbers valid if large
disturber applied
before useful signal
Blocking 3fLO, 5fLO
Low-band:
3  fLO – fIF
5  fLO + fIF
High-band
3  fLO – fIF
5  fLO + fIF
Pin
Symbol
(1, 2)
fdist. ≥ 50kHz
fdist. ≥ 100kHz
fdist. ≥ 225kHz
fdist. ≥ 450kHz
fdist. ≥ 1MHz
fdist. ≥ 4MHz
fdist.>10MHz
34
40
52
58
67
75
75
(1, 2)
fdist. ≥ 150kHz
fdist. ≥ 225kHz
fdist. ≥ 450kHz
fdist. ≥ 1MHz
fdist. ≥ 4MHz
fdist.>10MHz
39
46
52
62
68
68
(1, 2)
fdist. ≥ 225kHz
fdist. ≥ 450kHz
fdist. ≥ 1MHz
fdist. ≥ 4MHz
fdist.>10MHz
42
48
58
65
65
(1, 2)
fdist. ≥ 500kHz
fdist. ≥ 1MHz
fdist. ≥ 4MHz
fdist.>10MHz
(1, 2)
(1, 2)
Min.
Typ.
Max.
Unit
Type*
dBc
C
C
C
C
C
C
C
dBc
C
C
C
C
C
C
dBc
C
C
C
C
C
49
58
65
65
dBc
C
C
C
C
45
38
55
47
dB
dB
A
A
27
28
32
33
IMRED
BLNfLO
37
38
dB
39
45
RxDSP property
depends on nominal
RF frequency and
DIV_IF
fIF = fRF / (DIV_IF*6)
7.90
Nominal IF frequency
fIF
8.10
No AGC is used,
therefore, the full
System input referred
dynamic is available
compression point
receiving signals at
sensitivity level on pin
(1, 2)
ICP1dB
8.20
System input referred
Low-band
3rd-order intercept
High-band
point
(1, 2)
IIP3
242
251
C
C
C
C
276
kHz
B
–45
dBm
B
–35
–37
dBm
C
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Pin number in brackets mean, that they are measured matched to 50 on the application board.
ATA8510/ATA8515 [DATASHEET]
9315G–INDCO–08/15
29
4.5
RF Receiving Characteristics (Continued)
All parameters refer to GND (backplane) and are valid for Tamb = –40°C to +85°C, VVS = 1.9V to 3.6V over all process tolerances
unless otherwise specified. Typical values are given at VVS = 3V, Tamb = 25°C, and for a typical process unless otherwise specified.
Crystal oscillator frequency fXTO = 24.305MHz. Standard Atmel EEPROM settings are used unless marked with *1.
No.
Parameters
Test Conditions
8.30
System works from
Max, useful RX input sensitivity level up to
level without damping that level with
BER = 10-3
8.40
Max. useful RX input
level with damping
System works from
sensitivity level up to
that level with
BER = 10-3
Pin
Symbol
Min.
Typ.
(1, 2)
PIn_max1
–10
4
PIn_max2
+5
Zin
–20%
Max.
Unit
Type*
+10
dBm
C
+10
dBm
C

pF

pF

pF

pF
C
C
C
C
C
C
C
C
dBm
B
Measured on
application board,
RC parallel equivalent
circuit
315MHz
8.50
8.60
8.70
1
Input impedance
433.92MHz
1
868.3MHz
2
915MHz
2
LNA amplitude
detector switch level
Firmware switches
SPDT to damping on if
a level above SGainswitch
is present during start
of RXMode
(1, 2)
PGainswitch
SPDT switch RX
insertion loss
Damping off
Sensitivity matching
RF_IN with SPDT to
50 compared to
matching RF_IN
directly to 50
Low-band, 433.92MHz
High-band, 868MHz
(3, 4)
ILSwitch_RX
870
2.9
400
2.9
340
1.4
330
1.4
+20%
–39
0.7
1.0
1.1
1.4
dB
dB
C
C
15
18
16
19
dB
dB
C
C
–60
–86
–50
–60
dBm
C
C
Same matching as
parameter no. 8.70
8.80
SPDT switch RX
damping ON
This influences the
blocking behavior if
measured at pin 4
(3, 4)
Dswitch
14
17
Low-band
High-band
8.90
LO spurious at LNA
input
freq > 1GHz
freq < 1GHz
(1, 2)
PLO_LNA_IN
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Pin number in brackets mean, that they are measured matched to 50 on the application board.
30
ATA8510/ATA8515 [DATASHEET]
9315G–INDCO–08/15
4.5
RF Receiving Characteristics (Continued)
All parameters refer to GND (backplane) and are valid for Tamb = –40°C to +85°C, VVS = 1.9V to 3.6V over all process tolerances
unless otherwise specified. Typical values are given at VVS = 3V, Tamb = 25°C, and for a typical process unless otherwise specified.
Crystal oscillator frequency fXTO = 24.305MHz. Standard Atmel EEPROM settings are used unless marked with *1.
No.
Parameters
Test Conditions
Pin
Symbol
Min.
9.00
RSSI accuracy
PRFIN_LB(HB) = –70dBm
Low-band
High-band
(1, 2), 4
RSSIABS_ACCU
9.10
RSSI relative accuracy
Measurement range
–100dBm to –50dBm
(1, 2), 4
RSSIREL_ACCU
9.20
RSSI resolution
DSP property
(1, 2), 4
RSSIRES
Typ.
Max.
Unit
Type*
–5.0
–5.5
+5.0
+5.5
dB
B
–1
+1
dB
B
dB/
value
D
0.5
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Pin number in brackets mean, that they are measured matched to 50 on the application board.
ATA8510/ATA8515 [DATASHEET]
9315G–INDCO–08/15
31
4.6
RF Transmit Characteristics
All parameters refer to GND (backplane) and are valid for Tamb = –40°C to +85°C, VVS = 1.9V to 3.6V over all process tolerances
unless otherwise specified. Typical values are given at VVS = 3V, Tamb = 25°C, and for a typical process unless otherwise specified.
Crystal oscillator frequency fXTO = 24.305MHz. Standard Atmel EEPROM settings are used unless marked with *1.
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Tamb = 25°C
(7)
PRange
–12
Optimum load impedance
for each power step.
Up to two times higher
steps for fixed load
impedance.
(7)
ΔPOUT
Tamb = 25°C
using 6dBm matching
FEPAC = 35 (low-band)
FEPAC = 36 (high-band)
(7)
Pout_6dBm
Output 2nd harmonic
at 6dBm
Tamb = 25°C
using 6dBm matching
315MHz, FEPAC = 35
433.92MHz, FEPAC = 35
868.3MHz, FEPAC = 36
915MHz, FEPAC = 36
(7)
HM26dBm
Output 3rd harmonic
at 6dBm
Tamb = 25°C
using 6dBm matching
315MHz, FEPAC = 35
433.92MHz, FEPAC = 35
868.3MHz, FEPAC = 36
915MHz, FEPAC = 36
(7)
TXMode
10.50 current consumption
at 6dBm
6dBm matching
315MHz, FEPAC = 35
433.92MHz, FEPAC = 35
868.3MHz, FEPAC = 36
915MHz, FEPAC = 36
(7), 8,
13
ITXMode_6dBm
Output power
10.60
at 10dBm
Tamb = 25°C
using 10dBm matching
FEPAC = 46 (low-band)
FEPAC = 47 (high-band)
(7)
Pout_10dBm
Output 2nd harmonic
at 10dBm
Tamb = 25°C
using 10dBm matching
315MHz, FEPAC = 46
433.92MHz, FEPAC = 46
868.3MHz, FEPAC = 47
915MHz, FEPAC = 47
(7)
HM210dBm
Output 3rd harmonic
at 10dBm
Tamb = 25°C
using 10dBm matching
315MHz, FEPAC = 46
433.92MHz, FEPAC = 46
868.3MHz, FEPAC = 47
915MHz, FEPAC = 47
(7)
Typ.
Max.
Unit
Type*
+14.5
dBm
B
dB
C
dBm
B
dBc
C
C
C
C
dBc
C
C
C
C
Frequency Ranges and Frequency Resolution of PLL
See parameters 3.00 to 3.40 on page 25
TXMode Transmit Characteristics
10.00 Output power range
10.10
Output power
programming steps
Output power
10.20
at 6dBm
10.30
10.40
10.70
10.80
0.4
–1.5dB
+1.5dB
–30
–36
–35
-35
–33
–41
–58
–58
HM36dBm
HM310dBm
6
–1.5dB
8.7
9.1
11.5
11.7
11
12
14.5
15
mA
B
B
B
B
10
+1.5dB
dBm
B
dBc
C
C
C
C
dBc
C
C
C
C
–24
–28
–24
–27
–25
–34
–50
–55
* Type means: A = 100% tested at voltage and temperature limits, B = 100% correlation tested, C = Characterized on samples,
D = Design parameter. Pin numbers in brackets mean, that they are measured matched to 50 on the application board
32
ATA8510/ATA8515 [DATASHEET]
9315G–INDCO–08/15
4.6
RF Transmit Characteristics (Continued)
All parameters refer to GND (backplane) and are valid for Tamb = –40°C to +85°C, VVS = 1.9V to 3.6V over all process tolerances
unless otherwise specified. Typical values are given at VVS = 3V, Tamb = 25°C, and for a typical process unless otherwise specified.
Crystal oscillator frequency fXTO = 24.305MHz. Standard Atmel EEPROM settings are used unless marked with *1.
No.
Parameters
Test Conditions
Pin
Symbol
TXMode
10.90 current consumption
at 10dBm
10dBm matching
315MHz, FEPAC = 46
433.92MHz, FEPAC = 46
868.3MHz, FEPAC = 47
915MHz, FEPAC = 47
(7), 8,
13
ITXMode_10dBm
Output power
11.00
at 14dBm
Tamb = 25°C
using 14dBm matching
FEPAC = 56 (low-band)
FEPAC = 57 (high-band)
(7)
Pout_14dBm
Output 2nd harmonic
at 14dBm
Tamb = 25°C
using 14dBm matching
315MHz, FEPAC = 56
433.92MHz, FEPAC = 56
868.3MHz, FEPAC = 57
915MHz, FEPAC = 57
(7)
HM214dBm
Output 3rd harmonic
at 14dBm
Tamb = 25°C
using 14dBm matching
315MHz, FEPAC = 56
433.92MHz, FEPAC = 56
868.3MHz, FEPAC = 57
915MHz, FEPAC = 57
(7)
TXMode
11.30 current consumption
at 14dBm
14dBm matching
315MHz, FEPAC = 56
433.92MHz, FEPAC = 56
868.3MHz, FEPAC = 57
915MHz, FEPAC = 57
(7), 8,
13
ITXMode_14dBm
Output power
change 1
11.40
full temperature and
supply voltage range
Low-band,
High-band 0 to ≤10dBm
VVS = 3.0V
VVS = 1.9V to 3.6V
P = Pout + P
(7)
PTambVs1
Output power
change 2
11.50
full temperature and
supply voltage range
High-band >10dBm to
14dBm
VVS = 3.0V
VVS = 2.1V to 3.6V
P = Pout + P
(7)
PTambVs2
11.10
11.20
11.60 Spurious emission
Low-band:
at ±fXTO
at ±fAVR (fXTO / 4)
at ± fCLK_OUT (fXTO / 6)
High-band:
at ±fXTO
at ±fAVR (fXTO / 4)
at ± fCLK_OUT (fXTO / 6)
Min.
–1.5dB
Typ.
Max.
13.1
13.8
17.4
17.4
17
18.5
22.5
23
14
+1.5dB
Type*
mA
B
B
B
B
dBm
B
dBc
C
C
C
C
dBc
C
C
C
C
33
36
45
46
mA
B
B
B
B
–1.5
–5.5
+1.5
+2.5
dB
C
C
–3
–6
+1.5
+3
–30
–30
–24
–24
–30
–31
–50
–51
HM314dBm
24.3
26.3
32.7
33.5
–80
–85
–80
(7)
Unit
dB
–65
–65
–65
SPTX
C
C
B
C
C
dBc
–72
–85
–78
–60
–60
–60
B
C
C
* Type means: A = 100% tested at voltage and temperature limits, B = 100% correlation tested, C = Characterized on samples,
D = Design parameter. Pin numbers in brackets mean, that they are measured matched to 50 on the application board
ATA8510/ATA8515 [DATASHEET]
9315G–INDCO–08/15
33
4.6
RF Transmit Characteristics (Continued)
All parameters refer to GND (backplane) and are valid for Tamb = –40°C to +85°C, VVS = 1.9V to 3.6V over all process tolerances
unless otherwise specified. Typical values are given at VVS = 3V, Tamb = 25°C, and for a typical process unless otherwise specified.
Crystal oscillator frequency fXTO = 24.305MHz. Standard Atmel EEPROM settings are used unless marked with *1.
No.
Parameters
Test Conditions
TX transparent data
11.70 rate in Manchester
and NRZ mode
Manchester mode
NRZ mode
pre-emphasis enabled for
symbol rates higher than
40Kbit
TX buffered data rate
11.80 in Manchester and
NRZ mode
Manchester mode
NRZ mode
TX buffered data rate
programming step in
11.90
Manchester and NRZ
mode
AVR running with fXTO/4
Pin
Symbol
18, 7
Min.
Typ.
Max.
Unit
Type*
DRTX_TM_MAN
DRTX_TM_NRZ
80
160
Kbit/s
Ksym/s
B
B
DRTX_BUF_NRZ
DRTX_BUF_MAN
80
120
Kbit/s
Ksym/s
B
B
7
DRBUF
1
%
D
9
pF
B
Antenna Tuning and SPDT in TXMode
12.00
Antenna tuning
capacitor range
FEAT.ANTN(3:0) = 0 to 15
5
CTUNE_RANGE
12.10
Antenna tuning
capacitor resolution
4bits controlled with RF
front-end register
FEAT.ANT(3:0) available
5
CTUNE_RES
0.16
0.2
pF
C
Antenna tuning
series resistance
The series resistance
influences the quality
factor of the loop antenna
and causes radiated Tx
power losses
5
CTUNE_SRESIST
2.5
4

C
If higher levels occur in
application an external
capacitor to GND is
needed to reduce the
amplitude.
5
CTUNE_RFAMP_
3
Vp
D
1.1
1.2
dB
dB
C
C
–0.3
VS + 0.3
V
D
–0.3
VS + 0.3
V
D
12.20
Antenna tuning
12.30 maximum RF
amplitude
12.40
SPDT insertion loss
TX
Transmitted power using
matching RF_OUT with
SPDT to 50 compared
to matching RF_OUT
directly to 50
Low-band
High-band
4
MAX
(4, 6)
ILSwitch_TX
0.5
0.7
Maximum peak
12.45 voltage on SPDT_ANT
(pin 4)
4
Maximum peak
12.50 voltage on SPDT_TX
(pin 6)
6
VPEAK_SPDT_
ANT
VPEAK_SPDT_ TX
* Type means: A = 100% tested at voltage and temperature limits, B = 100% correlation tested, C = Characterized on samples,
D = Design parameter. Pin numbers in brackets mean, that they are measured matched to 50 on the application board
34
ATA8510/ATA8515 [DATASHEET]
9315G–INDCO–08/15
4.7
Oscillators and CLK_OUT
All parameters refer to GND (backplane) and are valid for Tamb = –40°C to +85°C, VVS = 1.9V to 3.6V over all process tolerances,
quartz parameters Cm = 4fF and C0 = 1pF unless otherwise specified. Typical values are given at VVS = 3V, Tamb = 25°C, and for a
typical process unless otherwise specified. Crystal oscillator frequency fXTO = 24.305MHz. Standard Atmel EEPROM settings are
used unless marked with *1.
No.
13.00
Parameters
Test Conditions
Pin
Symbol
CLK_OUT equivalent
internal capacitance
Used for current
calculation
13, 22
Supply current
13.10 increase CLK_OUT
active
Calculation can be
applied to all operation
modes except
OFFMode
13.30 XTO frequency range
Min.
Typ.
Max.
Unit
Type*
CCLK
7.5
10
pF
C
13
ICLK
(CCLK + CLOAD_CLK_OUT) x VVS x
fOUT
A
C
10, 11
fxto
23.8
26.2
MHz
C
24.305
XTO pulling due to
13.40 internal capacitance
and XTO tolerance
Cm = 4fF, Tamb = 25°C
10, 11
 FXTO1
–10
+10
ppm
B
XTO pulling due to
13.50 temperature and
supply voltage
Cm = 4fF
Tamb = –40°C to +85°C
10, 11
 FXTO2
–4
+4
ppm
B
13.60 Maximum C0 of XTAL
XTAL parameter
10, 11
C0_max
1
2
pF
D
XTAL, Cm motional
13.70
capacitance
XTAL parameter
10, 11
Cm
4
10
fF
D
13.80
XTAL, real part of XTO
Cm = 4fF, C0 = 1pF
impedance at start-up
10, 11
Rm_start1
950

B
13.90
XTAL, real part of XTO Cm = 4fF, C0 = 1pF,
impedance at start-up Tamb < 85°C
10, 11
Re_start2
1100

B
14.00
XTAL, maximum Rm
after start-up
XTAL parameter
10, 11
Rm_max
110

D
14.10
Internal load
capacitors
Including ESD and
package capacitance.
XTAL has to be
specified for 7.5pF load
capacitance
(incl. 1pF PCB
capacitance per pin)
10, 11
CL1, CL2
13.3
14
14.7
pF
B
14.20
Slow RC oscillator
frequency
Polling cycle can be
calibrated ±2%
accurate with fXTO
22
fSRC
–10%
125
+10%
kHz
A
14.30
Fast RC oscillator
frequency
FRC oscillator can be
calibrated ±2%
accurate with fXTO
22
fFRC
–5%
6.36
+5%
MHz
A
*) Type means: A = 100% tested at voltage and temperature limits, B = 100% correlation tested, C = Characterized on samples,
D = Design parameter
ATA8510/ATA8515 [DATASHEET]
9315G–INDCO–08/15
35
4.8
I/O Characteristics for Ports PB0 to PB7 and PC0 to PC5
All parameters refer to GND (backplane) and are valid for Tamb = –40°C to +85°C, VVS = 1.9V to 3.6V over all process tolerances
unless otherwise specified. Typical values are given at VVS = 3V, Tamb = 25°C, and for a typical process unless otherwise specified.
Crystal oscillator frequency fXTO = 24.305MHz. Standard Atmel EEPROM settings are used unless marked with *1.
No.
Parameters
Test Conditions
Pin
Symbol
Min.
–0.3
Typ.
Max.
Unit
Type*
0.2 x VVS
V
A
–1
µA
A
VVS + 0.3
V
A
15.00 Input low voltage
PC0 to PC5
PB0 to PB7
14-19
22-29
VIL
Input low leakage
current I/O pin
PC0 to PC5
PB0 to PB7
14-19
22-29
IIL
15.10 Input high voltage
PC0 to PC5
PB0 to PB7
14-19
22-29
VIH
Input high leakage
current I/O pin
PC0 to PC5
PB0 to PB7
14-19
22-29
IIH
1
µA
A
15.20 Output low voltage
IOL = 0.2mA
14-19
22-29
VOL_3V
0.1 x VVS
V
A
15.30 Output high voltage
IOH = –0.2mA
14-19
22-29
VOH_3V
0.9 x VVS
V
A
15.40 I/O pin pull-up resistor
OFFMode:
see port B and port C
14-19
22-29
RPU
30
70
k
A
Output low voltage for Configurable on pin
15.50 strong LED low-side
PB7
driver (PB7)
ILOAD = 1.5mA
29
VOL_STR1
0.1 x VVS
V
A
Output high voltage for Configurable on pin
15.60 strong LED/LNA high- PB7 and PB4
side driver (PB7, PB4) ILOAD = –1.5mA
26, 29
VOH_STR1
V
A
Activated in ISP mode
Output low voltage for
IOL = 1.7mA,
15.70 strong ISP low-side
VVs > 2.5V
driver (PB3)
Tamb = –40°C to +65°C
25
VOL_STR2
V
V
B
B
Activated in ISP mode
Output high voltage for
IOH = –1.7mA,
15.80 strong ISP high-side
VVs > 2.5V
driver (PB3)
Tamb = –40°C to +65°C
25
VOH_STR2
V
V
B
B
4.5
MHz
B
55
%
A
15.05
15.15
0.8 x VVS
50
0.9 x VVS
0.1 x VVS
0.1 x VVS
0.9 x VVS
0.9 x VVS
CLK_OUT output
15.90
frequency
XTO, FRC or SRC
related clock
fCLK_OUT =
fOSC/(2*CLKOD)
22
fCLK_OUT
16.00 CLK_OUT duty cycle
CLOAD_CLK_OUT = 10pF
fCLK_OUT = 4.5MHz
22
DTYCLK_OUT
45
3V application
CLoad = 10pF
14-19
22-29
Tdel_rise_3V
13.6
17.5
22.4
ns
D
3V application
CLoad = 10pF
14-19
22-29
Trise_3V
20.7
23.9
28.4
ns
D
I/O pin slew rate (rising 3V application
edge)
CLoad = 10pF
14-19
22-29
Tsr_rise_3V
0.115
0.100
0.084
V/ns
D
16.10
I/O pin output delay
time (rising edge)
I/O pin rise time
16.20 (0.1  VVS to
0.9  VVS)
16.30
*) Type means: A = 100% tested at voltage and temperature limits, B = 100 % correlation tested, C = Characterized on samples,
D = Design parameter
36
ATA8510/ATA8515 [DATASHEET]
9315G–INDCO–08/15
4.8
I/O Characteristics for Ports PB0 to PB7 and PC0 to PC5 (Continued)
All parameters refer to GND (backplane) and are valid for Tamb = –40°C to +85°C, VVS = 1.9V to 3.6V over all process tolerances
unless otherwise specified. Typical values are given at VVS = 3V, Tamb = 25°C, and for a typical process unless otherwise specified.
Crystal oscillator frequency fXTO = 24.305MHz. Standard Atmel EEPROM settings are used unless marked with *1.
No.
16.40
Parameters
Test Conditions
I/O pin output delay
time (falling edge)
I/O pin fall time
16.50 (0.9  VVS to
0.1  VVS)
16.60
I/O pin slew rate
(falling edge)
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
3V application
CLoad = 10pF
14-19
22-29
Tdel_fall_3V
13.7
17.4
22.7
ns
D
3V application
CLoad = 10pF
14-19
22-29
Tfall_3V
16.2
19.2
22.5
ns
D
3V application
CLoad = 10pF
14-19
22-29
Tsr_fall_3V
0.148
0.125
0.106
V/ns
D
*) Type means: A = 100% tested at voltage and temperature limits, B = 100 % correlation tested, C = Characterized on samples,
D = Design parameter
4.9
Hardware Timings
All parameters refer to GND (backplane) and are valid for Tamb = –40°C to + 85°C, VVS =1.9V to 3.6V over all process tolerances.
Typical values are given at VVS = 3V, Tamb = 25°C, and for a typical process unless otherwise specified. Crystal oscillator frequency
fXTO = 24.305MHz. Standard Atmel EEPROM Settings are used if marked with *1.
No.
Parameters
17.00 Start-up Time XTO
Test Conditions
Pin
Symbol
AVCC already enabled
and ready
C0 < 1.5pF
4fF < Cm < 15fF
Rm < 110
Rm < 800
10, 11
TStart_XTO
Min.
Typ.
Max.
Unit
Type*
90
130
250
1500
µs
µs
B
C
17.10
Erase and Write
EEPROM
using ISP commands or
SPI command “Write
EEPROM”
14, 23,
24, 25
TEE_ER_WR
10
ms
B
17.20
Erase Only
EEPROM
using ISP commands
14, 23,
24, 25
TEE_ER
5
ms
B
17.30 Write Only EEPROM using ISP commands
14, 23,
24, 25
TEE_WR
5
ms
B
PWRON = ‘1’ or
System Initialisation NPWRON = ‘0’ to
17.50
Startup Time
INTERNAL RESET
removal
13,20
TSYSINIT1
200
µs
B
80
*) Type means: A = 100% tested at voltage and temperature limits, B = 100% correlation tested, C = Characterized on samples,
D = Design parameter
ATA8510/ATA8515 [DATASHEET]
9315G–INDCO–08/15
37
5.
Ordering Information
Extended Type Number
Package
Remarks
ATA8510-GHQW
QFN32
5mm 5mm, 6k tape and reel, PB-free, 20Kbyte user Flash
ATA8515-GHQW
QFN32
5mm  5mm, 6k tape and reel, PB-free
6.
Package Information
Top View
D
32
1
E
technical drawings
according to DIN
specifications
PIN 1 ID
Dimensions in mm
8
A
Side View
A3
A1
Two Step Singulation process
Partially Plated Surface
Bottom View
D2
9
16
17
8
COMMON DIMENSIONS
E2
(Unit of Measure = mm)
1
SYMBOL
MIN
24
32
Z
25
e
L
Z 10:1
NOM
MAX
A
0.8
0.85
0.9
A1
A3
0
0.16
0.035
0.21
0.05
0.26
D
4.9
5
5.1
D2
3.5
3.6
3.7
E
4.9
5
5.1
E2
3.5
3.6
3.7
L
0.35
0.4
0.45
b
0.2
0.25
0.3
e
NOTE
0.5
b
10/18/13
TITLE
Package Drawing Contact:
[email protected]
38
Package: VQFN_5x5_32L
Exposed pad 3.6x3.6
ATA8510/ATA8515 [DATASHEET]
9315G–INDCO–08/15
GPC
DRAWING NO.
REV.
6.543-5124.03-4
1
7.
Revision History
Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this
document.
Revision No.
History
9315G-INDCO-08/15
Section 2.2 “Operating Modes Overview” on pages 13 to 14 updated
Section 4.4 “Supply Voltages and Current Consumption” on page 24 updated
9315F-INDCO-11/14
Section 4.8 “I/O Characteristics for Ports PB0 to PB7 and PC0 to PC5” on pages 36 to
37 updated
Section 5 “Ordering Information” on page 38 updated
9315E-INDCO-09/14
Section 4.5 “RF Receiving Characteristics” on pages 25 to 31 updated
Section 6 “Package Information” on page 38 updated
Features on page 2 updated
Section 1.3 “Pinning” on pages 5 to 6 updated
Section 1.4 “Typical Applications” on pages 9 to 10 updated
9315D-INDCO-07/14
Section 2.2 “Operating Modes Overview” on page 15 updated
Section 3 “Hardware” on pages 16 to 17 updated
Section 3.5 “Power Management” on page 22 updated
Section 4 “Electrical Characteristics” on pages 22, 23, 34 and 35 updated
9315C-INDCO-04/14
9315BX-INDCO-03/14
“Atmel Confidential” removed on all pages
ATA8505 renamed to ATA8515 on all pages
Section 5 “Ordering Information” on page 38 updated
ATA8510/ATA8515 [DATASHEET]
9315G–INDCO–08/15
39
XXXXXX
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© 2015 Atmel Corporation. / Rev.: 9315G–INDCO–08/15
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