CJ2301 P-Channel Enhancement Mode MOSFET Feature -20V/-3A, RDS(ON) = 120mΩ(MAX) @VGS = -4.5V. RDS(ON) = 150mΩ(MAX) @VGS = -2.5V. Super High dense cell design for extremely low RDS(ON) Reliable and Rugged SOT-23 for Surface Mount Package SOT-23 Applications ● Power Management Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings TA=25℃ Unless Otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Electrical Characteristics Parameter Off Characteristics Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Symbol Limit Units VDS VGS ID -20 ±10 -3 V V A TA=25℃ Unless Otherwise noted Symbol Test Conditions Min Typ. Max Units BVDSS VGS=0V, ID=-250μA -20 - - V IDSS VDS=-20V, VGS=0V - - -1 μA IGSSF IGSSR VGS=10V, VDS=0V VGS=-10V, VDS=0V - - 100 -100 nA nA VGS(th) VGS= VDS, ID=-250µA -0.4 - -1.0 V RDS(ON) VGS =-4.5V, ID =-3.0A VGS =-2.5V, ID =-2.0A - --- 120 150 mΩ mΩ -1.2 V On Characteristics Gate Threshold Voltage Static Drain-source On-Resistance Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage [email protected] VSD VGS =0V, IS=-1.25A www.zpsemi.com 1 of 6 CJ2301 Typical Characteristics 12 VGS=3，3.5，4V，4.5V 14 10 -ID,Drain Current (A) -ID,Drain Current(A) 12 10 VGS=2.5V 8 6 4 8 6 Tj＝150℃ 4 Tj＝25℃ 2 2 VGS=2.0V 0 0 0 1 2 3 4 0 5 1 Figure 1．Output Characteristics 3 4 Figure 2．Transfer Characteristics 1.3 23.2 ID=250uA -Vth,Nomalized Gate-Source Threshold Voltage(V) -BVDSS,Normalized Drain-Source Breakdown Voltage(V) 2 -VGS,Gate-to-Source Voltage (V) -VDS,Drain-Source Voltage(V) 23 22.8 22.6 22.4 22.2 ID=250uA 1.2 1.1 1 0.9 0.8 22 0 50 100 150 0 Tj,Junction Temperature(℃) Figure 3．Breakdown Voltage Variation with Temperature [email protected] 50 100 150 Tj,Junction Temperature(℃) Figure 4．Gate Threshold Variation with Temperature www.zpsemi.com 2 of 6 CJ2301 Typical Characteristics 0.125 0.35 0.3 0.12 RDS(on)-On Resistance(Ω) Rds(on),Normalized OnResistance(Ω) -3.0V/-2.0A 0.115 0.11 0.105 0.25 VGS=-2.5V 0.2 0.15 VGS=-4.5V 0.1 0.05 0.1 0 50 100 0 150 0 Tj,Junction Temperature(℃) Figure 5．On-Resistance Variation with Temperature 5 10 15 - ID-Drain Current(A) 20 Figure 6．On-Resistance vs. Drain Current 0.3 100 0.15 0.1 0.05 -IS,Source-Drain Current(A) 0.2 RDS(on),On-Resistance (Ω) ID=-3A 0.25 ID=-2A 0 10 Tj＝150℃ Tj＝25℃ 1 0.1 1 2 3 4 5 1 - VGS,Gate-to-Source Voltage (V) Figure 7 ． On-Resistance vs. Gate-to-Source Voltage Voltage [email protected] 2 3 4 5 -VSD,Body Diode Forward Voltage(V) Figure 8 ． Source-Drain Diode Forward www.zpsemi.com 3 of 6 CJ2301 Package Outline Dimensions (UNIT: mm) SOT-23 [email protected] www.zpsemi.com 4 of 6 CJ2301 SOT-23 Carrier Tape [email protected] www.zpsemi.com 5 of 6 CJ2301 SOT-23 Carrier Reel [email protected] www.zpsemi.com 6 of 6