WINNERJOIN BD136 Transistor (pnp) Datasheet

RoHS
BD136/138/140
BD136/BD138/BD140
D
T
,. L
TRANSISTOR (PNP)
TO-126
FEATURES
Power dissipation
PCM:
1.25
W (Tamb=25℃)
1. EMITTER
Collector current
ICM:
-1.5
A
Operating and storage junction temperature range
2. COLLECTOR
3. BASE
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
V(BR)CEO
C
E
L
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
J
E
DC current gain
unless otherwise specified)
Test
N
conditions
O
Ic=-100µA, IE=0
R
T
Collector-emitter breakdown voltage
IC
Ic=-30mA, IB=0
BD136
-45
BD138
-60
BD140
-80
BD136
-45
BD138
-60
BD140
-80
TYP
MAX
V
V
ICBO
VCB=-30V, IE=0
-0.1
µA
IEBO
VEB=-5V, IC=0
-10
µA
hFE(1)
VCE=-2V, IC=-5Ma
-5
BD136
VCE=-2V, IC=-150mA
BD138
BD140
V
25
40
250
40
160
hFE(3)
VCE=-2V, IC=-500mA
VCE(sat)
IC=-500mA, IB=-50mA
-0.5
V
VBE
VCE=-2V, IC=-500mA
-1
V
Base-emitter voltage
25
CLASSIFICATION OF hFE(2)
Rank
Range
6
10
16
40-100
63-160
100-250
WEJ ELECTRONIC CO.
UNIT
IE=-100µA, IC=0
hFE(2)
W
MIN
V(BR)EBO
E
Collector-emitter saturation voltage
C
O
123
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E-mail:[email protected]
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