RoHS BD136/138/140 BD136/BD138/BD140 D T ,. L TRANSISTOR (PNP) TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current ICM: -1.5 A Operating and storage junction temperature range 2. COLLECTOR 3. BASE TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol Collector-base breakdown voltage V(BR)CBO V(BR)CEO C E L Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current J E DC current gain unless otherwise specified) Test N conditions O Ic=-100µA, IE=0 R T Collector-emitter breakdown voltage IC Ic=-30mA, IB=0 BD136 -45 BD138 -60 BD140 -80 BD136 -45 BD138 -60 BD140 -80 TYP MAX V V ICBO VCB=-30V, IE=0 -0.1 µA IEBO VEB=-5V, IC=0 -10 µA hFE(1) VCE=-2V, IC=-5Ma -5 BD136 VCE=-2V, IC=-150mA BD138 BD140 V 25 40 250 40 160 hFE(3) VCE=-2V, IC=-500mA VCE(sat) IC=-500mA, IB=-50mA -0.5 V VBE VCE=-2V, IC=-500mA -1 V Base-emitter voltage 25 CLASSIFICATION OF hFE(2) Rank Range 6 10 16 40-100 63-160 100-250 WEJ ELECTRONIC CO. UNIT IE=-100µA, IC=0 hFE(2) W MIN V(BR)EBO E Collector-emitter saturation voltage C O 123 Http:// www.wej.cn E-mail:[email protected]