Central CMPD2003 ^ CMPD2003C ^ CMPD2003S CMPD2004 ^ CMPD2004C CMPD2004S TM Semiconductor Corp. DESCRIPTION SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004C, and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. SOT-23 CASE The following configurations are available: CMPD2003 CMPD2003C CMPD2003S CMPD2004 CMPD2004C CMPD2004S SINGLE DUAL, COMMON CATHODE DUAL, IN SERIES SINGLE DUAL, COMMON CATHODE DUAL, IN SERIES MAXIMUM RATINGS (TA=25°C) Continuous Reverse Voltage Peak RepetitiveReverse Voltage Peak Repetitive Reverse Current Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1 ms Forward Surge Current, tp=1 s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IO IF IFRM IFSM IFSM PD MARKING CODE: MARKING CODE: MARKING CODE: MARKING CODE: MARKING CODE: MARKING CODE: A82 C3C C3S D53 DB7 DB6 CMPD2003 CMPD2004 CMPD2003C CMPD2004C CMPD2003S CMPD2004S 200 240 250 300 200 200 250 225 625 625 4000 4000 1000 1000 350 TJ,Tstg QJA -65 to +150 357 UNITS V V mA mA mA mA mA mW °C °C/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL BVR IR TEST CONDITIONS IR=100mA VR=200V CMPD2003 CMPD2003C CMPD2003S MIN MAX 250 100 170 CMPD2004 CMPD2004C CMPD2004S MIN MAX 300 - UNIT V nA CMPD2003 CMPD2003C CMPD2003S MIN MAX SYMBOL TEST CONDITIONS IR IR IR VF VF CT trr VR=200V, TA=150°C VR=240V VR=240V, TA=150°C IF=100mA IF=200mA VR=0, f=1 MHz IF=IR=30mA, Rec. TO 3.0mA, RL=100W CMPD2004 CMPD2004C CMPD2004S MIN MAX 100 1.0 1.25 5.0 50 100 100 1.0 5.0 50 UNIT mA nA mA V V pF ns TOP VIEW All Dimensions in Inches (mm). 120,1$/ 120,1$/ 0$;,080 0$;,080 1& $ & CMPD2003 CMPD2004 $ $ && CMPD2003C CMPD2004C & $ $& CMPD2003S CMPD2004S R3 171