ES1AF THRU ES1JF HD AF46 SMAF Plastic-Encapsulate Diodes Super Fast Recovery Rectifier Diode Features ●Io 1A SMAF ●VRRM 50V-600V ●High surge current capability ●Glass passivated chip ● Polarity: Color band denotes cathode Applications ● Rectifier Marking ● ES1AF-ES1JF : ES1A-ES1J Item Symbol Unit Test Conditions ES1 AF BF CF DF EF GF HF JF Repetitive Peak Reverse Voltage VRRM V 50 100 150 200 300 400 500 600 Maximum RMS Voltage V RMS V 35 70 105 140 210 280 350 420 Average Forward Current IF(AV) A 60HZ Half-sine wave, Resistance load, TL=120℃ 1.0 Surge(Non-repetitive)Forward Current IFSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 30 TJ ℃ -55~+150 TSTG ℃ -55 ~ +150 Junction Temperature Storage Temperature Electrical Characteristics (T=25℃ Unless otherwise specified） ES1 Item Symbol Unit Peak Forward Voltage VF V Maximum reverse recovery time trr ns Peak Reverse Current Thermal Resistance(Typical) IRRM1 I μA RθJ-A Test Condition IF =1.0A AF BF CF DF EF 0.95 IF=0.5A,IR=1.0A,Irr=0.25A 1.25 JF 1.70 35 Ta =25℃ 5 Ta =100℃ 100 Between junction and ambient 85 Between junction and terminal 351) VRM=VRRM GF HF 1) ℃/W RθJ-L Notes: Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas High Diode Semiconductor 1 J Typical Characteristics FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT IFSM(A) IO(A) FIG.1: FORWARD CURRENT DERATING CURVE 1.2 1.0 25 0.8 15 0.4 0 80 8.3ms Single Half Sine Wave 20 0.6 0.2 30 10 5 Resistive or Inductive Load P.C.B. Mounted on 0.2"×0.2" (5.0mm×5.0mm)Copper Pad Areas 90 100 110 120 130 140 0 150 TL(℃) 1 10 FIG.4：TYPICAL REVERSE CHARACTERISTICS IR(uA) FIG.3: TYPICAL FORWARD CHARACTERISTICS IF(A) 100 Number of Cycles 100 TJ=25℃ Pulse width=300us 1% Duty Cycle 1000 Tj=150℃ ES1A-ES1D 10 Tj=125℃ 100 Tj=100℃ ES1E-ES1G 1.0 10 ES1H-ES1J 0.1 1.0 Tj=25℃ 0.01 0.4 0.1 0.6 0.8 1.0 1.2 1.4 1.6 VF(V) 0 20 40 60 80 100 Voltage(%) FIG.5: Diagram of circuit and Testing wave form of reverse recovery time I D trr IF VR IF RL t 0 IRR IR High Diode Semiconductor 2 SMAF .193(4.90) .173(4.40) .047(1.20) .035(0.90) .146(3.70) .130(3.30) .063(1.60) .106(2.70) .051(1.30) .094(2.40) .007(0.18) .005(0.12) .051(1.30) .031(0.80) Dimensions in inches and (millimeters) SMAF 1.9 4.65 0.55 JSHD JSHD High Diode Semiconductor 3 Reel Taping Specifications For Surface Mount Devices-SMAF High Diode Semiconductor 4