Sanyo ENN7519 Low-frequency general-purpose amplifier application Datasheet

Ordering number : ENN7519
50C02SS
NPN Epitaxial Planar Silicon Transistor
50C02SS
Low-Frequency
General-Purpose Amplifier Applications
Applications
•
Package Dimensions
Low-frequency Amplifer, high-speed switching,
small motor drive, muting circuit.
unit : mm
2159A
[50C02SS]
Features
0.3
0.1
3
1
0.45
2
Bottom View
0.2
Side View
0.07
•
0.25
1.4
•
Side View
0.8
•
Top View
1.4
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance).
RCE(sat) typ=175mΩ [IC=0.5A, IB=50mA].
Ultrasmall package facilitates miniaturization in end
products.
Small ON-resistance (Ron).
0.3
•
1 : Base
2 : Emitter
3 : Collector
0.6
3
0.07
1
2
SANYO : SSFP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
60
V
Collector-to-Emitter Voltage
VCEO
50
V
Emitter-to-Base Voltage
VEBO
5
Collector Current
IC
Collector Current (Pulse)
Collector Dissipation
ICP
PC
Junction Temperature
Tj
Storage Temperature
Tstg
400
V
mA
800
mA
200
mW
150
°C
--55 to +150
°C
Mounted on a glass-epoxy board (20✕30✕1.6mm)
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Symbol
ICBO
IEBO
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
hFE
fT
Conditions
Ratings
min
typ
max
Unit
VCB=40V, IE=0
100
nA
VEB=4V, IC=0
100
nA
VCE=2V, IC=10mA
300
VCE=10V, IC=50mA
800
500
Marking : YN
MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52703 TS IM TA-100152 No.7519-1/4
50C02SS
Continued from preceding page.
Parameter
Symbol
Output Capacitance
Ratings
Conditions
Cob
min
typ
Unit
max
VCB=10V, f=1MHz
2.8
VCE(sat)
IC=100mA, IB=10mA
50
100
VBE(sat)
V(BR)CBO
IC=100mA, IB=10mA
IC=10µA, IE=0
0.9
1.2
Collector-to-Base Breakdown Voltage
60
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10µA, IC=0
5
V
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Turn-ON Time
ton
tstg
tf
Storage Time
Fall Time
pF
mV
V
V
See specified Test Circuit.
30
See specified Test Circuit.
340
ns
ns
See specified Test Circuit.
55
ns
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
OUTPUT
IB2
INPUT
RB
VR
RL
50Ω
+
220µF
+
470µF
VBE= --5V
VCC=25V
IC=20IB1= --20IB2=200mA
IC -- VCE
250
1mA
600µA
200
150
200µA
100
400
300
200
--25°C
2mA
°C
25°C
A 1
5m
3mA
Ta=7
5
300
500
Collector Current, IC -- mA
350
8mA
A
VCE=2V
5mA
10m
20m
400
7mA
30mA
Collector Current, IC -- mA
450
IC -- VBE
600
A
500
100
50
IB=0
400
500
600
700
900
800
Collector-to-Emitter Voltage, VCE -- mV
0
0.6
0.8
1.0
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
3
2
100
7
5
3
2
1.2
IT05107
VCE(sat) -- IC
IC / IB=10
VCE=2V
25°C
--25°C
5
0.4
Base-to-Emitter Voltage, VBE -- V
3
Ta=75°C
7
0.2
IT05106
hFE -- IC
1000
DC Current Gain, hFE
0
1000
2
100
7
75
°C
300
5
Ta
=
200
°C
3
25
5°
C
100
--2
0
0
2
10
7
10
1.0
2
3
5 7 10
2
3
5 7 100
Collector Current, IC -- mA
2
3
5 7 1000
IT05108
5
1.0
2
3
5 7 10
2
3
5 7 100
Collector Current, IC -- mA
2
3
5 7 1000
IT05411
No.7519-2/4
50C02SS
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Ta
=7
5°
C
°C
100
7
°C
5
25
3
2
2
3
5 7 10
2
3
5 7 100
2
3
100
°C
25
7
5
°C
75
=
Ta
C
5°
--2
3
2
2
3
5 7 10
2
3
5 7 100
2
IT05110
Cob -- VCB
10
f=1MHz
5
3
2
25°C
1.0
Ta= --25°C
7
75°C
5
5 7 1000
3
Collector Current, IC -- mA
Output Capacitance, Cob -- pF
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2
IC / IB=20
7
3
7
5
3
2
2
0.1
1.0
2
3
5 7 10
2
3
5 7 100
2
3
1.0
1.0
5 7 1000
Collector Current, IC -- mA
2
3
5
7
100
7
5
VCE=10V
7
ON Resistance, Ron -- Ω
3
2
3
5
7
100
IT05112
Ron -- IB
1kΩ
f=1MHz
OUT
IN
1kΩ
3
5
2
10
Collector-to-Base Voltage, VCB -- V
IT05111
fT -- IC
1000
Gain-Bandwidth Product, fT -- MHz
3
IT05109
VBE(sat) -- IC
10
5
10
1.0
5 7 1000
Collector Current, IC -- mA
2
IB
10
7
5
3
2
1.0
7
5
3
2
100
1.0
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
Collector Current, IC -- mA
IT05113
PC -- Ta
250
Collector Dissipation, PC -- mW
IC / IB=50
7
2
10
1.0
VCE(sat) -- IC
1000
IC / IB=20
--2
5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
3
200
0.1
0.1
2
3
5
7
1.0
2
Base Current, IB -- mA
3
5
7
10
IT06092
M
ou
nt
150
ed
on
ag
las
s-e
po
xy
100
bo
ar
d(
20
✕3
0✕
1
50
.6m
m
)
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT05114
No.7519-3/4
50C02SS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2003. Specifications and information herein are subject
to change without notice.
PS No.7519-4/4
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