BeRex BCP120T High efficiency heterojunction power fet chip Datasheet

BCP120T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm)
The BeRex BCP120T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 1200 micron gate width
making the product ideally suited for applications where high-gain and medium power in the 1000 MHz to 26.5
GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band
applications. The BCP120T is produced using state of the art metallization with SI 3N4 passivation and is screened to
assure reliability.
PRODUCT FEATURES



32 dBm Typical Output Power
11 dB Typical Gain @ 12 GHz
0.25 X 1200 Micron Recessed Gate
APPLICATIONS



Commercial
Military / Hi-Rel.
Test & Measurement
ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C
SYMBOL
PARAMETER/TEST CONDITIONS
P1dB
Output Power @ P1dB (Vds = 8V, Ids = 50%
Idss)
G1dB
Gain @ P1dB (Vds = 8V, Ids = 50% Idss)
PAE
PAE @ P1dB (Vds = 8V, Ids = 50% Idss)
Idss
Saturated Drain Current (Vgs = 0V, Vds = 1.0 V)
Gm
Transconductance (Vds = 2V, Vgs = 50% Idss)
Vp
Pinch-off Voltage (Ids = 1.2 mA, Vds = 2V)
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
MIN.
TYPICAL
31.0
32.0
32.0
11.0
8.0
60
55
10.0
240
360
MAX.
dBm
dB
%
480
480
-2.5
UNIT
mA
mS
-1.1
-0.5
V
-12
V
BVgd
Drain Breakdown Voltage (Igd = 1.2 mA, source open)
-15
BVgs
Source Breakdown Voltage (Ig = 1.2 mA, drain open)
-13
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
41
°C/W
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BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2011
Rev. 1.2
September 2011
BCP120T
ELECTRICAL CHARACTERISTIC (TUNED FOR GAIN) Ta = 25° C
SYMBOL
PARAMETER/TEST CONDITIONS
P1dB
Output Power @ P1dB (Vds = 8V, Ids = 50%
Idss)
G1dB
Gain @ P1dB (Vds = 8V, Ids = 50% Idss)
PAE
PAE @ P1dB (Vds = 8V, Ids = 50% Idss)
Idss
Saturated Drain Current (Vgs = 0V, Vds = 1.0V)
Gm
Transconductance (Vds = 2V, Vgs = 50% Idss)
Vp
Pinch-off Voltage (Ids = 1.2 mA, Vds = 2V)
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
MIN.
TYPICAL
29.0
30.0
30.0
12.0
9.0
50
45
11.0
240
360
MAX.
dBm
dB
%
480
480
-2.5
UNIT
mA
mS
-1.1
-0.5
V
-12
V
BVgd
Drain Breakdown Voltage (Igd = 0.8 mA, source open)
-15
BVgs
Source Breakdown Voltage (Ig = 0.8 mA, drain open)
-13
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
41
°C/W
MAXIMUM RATING (Ta = 25° C)
SYMBOL
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
12 V
-6 V
Idss
60 mA
29 dBm
175° C
-60° C - 150° C
4.9 W
CONTINUOUS
8V
-3 V
Idss
10 mA
@ 3dB compression
150° C
-60° C - 150° C
4.1 W
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.
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st
BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2011
Rev. 1.2
September 2011
BCP120T
PIN_POUT/Gain, PAE (12 GHz)
Frequency = 12GHz
Vds = 8 V, Ids = 50% Idss (Tuned for Power)
Frequency = 12GHz
Vds = 8 V, Ids = 50% Idss (Tuned for Gain)
PIN_POUT/Gain, PAE (18 GHz)
Frequency = 18GHz
Vds = 8 V, Ids = 50% Idss (Tuned for Power)
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Frequency = 18GHz
Vds = 8 V, Ids = 50% Idss (Tuned for Gain)
st
BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2011
Rev. 1.2
September 2011
BCP120T
S-PARAMETER (Vds = 8V, Ids = 50% Idss)
FREQ.
[GHZ]
S11
[MAG]
S11
[ANG.]
S21
[MAG]
S21
[ANG.]
S12
[MAG]
S12
[ANG.]
S22
[MAG]
S22
[ANG.]
1
0.87
-107.97
14.78
119.26
0.032
41.51
0.27
-114.33
2
0.84
-145.40
8.59
97.61
0.038
33.64
0.28
-143.90
3
0.84
-163.59
5.95
85.22
0.040
30.50
0.30
-155.42
4
0.84
-174.83
4.52
75.95
0.045
31.72
0.31
-160.78
5
0.84
176.68
3.62
67.51
0.045
33.32
0.32
-164.63
6
0.85
169.41
3.01
59.98
0.048
34.78
0.34
-167.42
7
0.86
163.34
2.53
52.95
0.050
36.49
0.36
-170.61
8
0.86
157.55
2.21
46.07
0.051
39.56
0.37
-172.00
9
0.87
152.27
1.95
40.15
0.055
38.30
0.39
-175.10
10
0.88
147.45
1.74
34.08
0.057
39.28
0.41
-177.55
11
0.88
142.20
1.56
27.88
0.062
38.46
0.43
179.73
12
0.89
137.21
1.41
21.58
0.063
36.94
0.45
177.54
13
0.90
132.89
1.28
16.17
0.066
37.28
0.47
174.32
14
0.91
128.43
1.15
10.37
0.066
36.24
0.49
171.27
15
0.92
124.72
1.04
5.09
0.068
34.24
0.52
167.79
16
0.93
121.32
0.96
-0.15
0.070
32.48
0.55
164.44
17
0.93
118.18
0.86
-5.87
0.071
30.66
0.58
160.90
18
0.94
115.66
0.77
-10.08
0.069
26.37
0.60
157.59
19
0.94
114.16
0.69
-14.84
0.071
27.07
0.62
153.96
20
0.94
111.93
0.62
-19.23
0.074
25.55
0.65
151.27
21
0.95
110.61
0.56
-22.40
0.075
23.86
0.67
148.70
22
0.94
110.14
0.50
-26.10
0.078
22.88
0.69
146.17
23
0.94
109.48
0.45
-28.36
0.075
21.58
0.71
143.44
24
0.94
109.46
0.41
-30.96
0.076
20.17
0.74
141.85
25
0.95
109.38
0.37
-32.98
0.075
18.97
0.75
140.00
26
0.94
108.63
0.33
-34.75
0.074
21.22
0.76
139.27
Note: S-parameters include bond wires. Reference planes are at edge of substrates shown on “Wire Bonding Information” figure below.
www.berex.com
st
BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2011
Rev. 1.2
September 2011
BCP120T
WIRE BONDING INFORMATION
Using 1 mil. diameter, Au bonding wires.
1. Gate to input transmission line
- Length and Height : 600 µm x 250 µm
- Number of wire(s): 2
2. Drain to output transmission line
- Length and Height : 400 µm x 250 µm
- Number of wire(s) : 2
3. Source to ground plate
- Length and Height : 250 µm x 300 µm
- Number of wire(s) : 6
DISCLAIMER
BEREX RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN. BEREX DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
BEREX PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES WITHOUT THE
EXPRESS WRITTEN APPROVAL OF BEREX.
1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or
(b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use
provided in labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
www.berex.com
st
BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2011
Rev. 1.2
September 2011
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