CMUDM7004 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM7004 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage. MARKING CODE: 74C SOT-523 CASE APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Devices FEATURES: • ESD Protection up to 2kV • Low rDS(on) • Low Threshold Voltage • Logic Level Compatible • Small, SOT-523 Surface Mount Package • Complimentary P-Channel MOSFET: CMUDM8004 MAXIMUM RATING: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VDS 30 VGS ID 8.0 V 450 mA 250 mW -65 to +150 °C PD TJ, Tstg ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=8.0V, VDS=0 IDSS VDS=30V, VGS=0 BVDSS VGS(th) VGS=0, ID=10μA VDS=VGS, ID=250μA VSD rDS(ON) VGS=0, IS=400mA VGS=4.5V, ID=200mA rDS(ON) VGS=2.5V, VGS=1.8V, rDS(ON) gFS Crss Ciss Coss ton toff UNITS V MAX UNITS 3.0 μA 1.0 μA 1.0 V 30 V 0.5 1.1 V 280 460 mΩ ID=100mA 390 560 mΩ ID=75mA 550 730 mΩ VDS=10V, ID=100mA VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz VDS=5.0V, VGS=4.0V, ID=75mA, RG=10Ω VDS=5.0V, VGS=4.0V, ID=75mA, RG=10Ω 0.5 200 mS 5.0 pF 43 pF 8.0 pF 20 ns 75 ns R0 (17-June 2010) CMUDM7004 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-523 CASE - MECHANICAL OUTLINE PIN CONFIGURATION (Bottom View) LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: 74C R0 (17-June 2010) w w w. c e n t r a l s e m i . c o m