SB2H90 and SB2H100 Vishay Semiconductors New Product formerly General Semiconductor High Voltage Schottky Rectifiers Reverse Voltage 90 to 100V Forward Current 2.0A DO-204AC (DO-15) Features 0.034 (0.86) 0.028 (0.71) Dia. • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low power loss, high efficiency • For use in low voltage high frequency inverters, free wheeling, and polarity protection applications • Guardring for overvoltage protection 1.0 (25.4) min. Mechanical Data 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) Dia. 1.0 (25.4) min. Dimensions in inches and (millimeters) Case: JEDEC DO-204AC molded plastic over a passivated junction Terminals: Solder Plated axial leads, solderable per MILSTD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds 0.375” (9.5mm) lead length, 5 lbs. (2.3kg) tension Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.015 oz., 0.4 g Maximum Ratings and Thermal Characteristics (T Parameter A = 25°C unless otherwise noted) Symbol SB2H90 SB2H100 Unit Maximum repetitive peak reverse voltage VRRM 90 100 V Working Peak Reverse Voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 V Maximum average forward rectified current at TA = 25°C IF(AV) 2.0 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 75 A Peak repetitive reverse surge current at tp = 2.0µs, 1KHZ IRRM 1.0 A Critical rate of rise of reverse voltage dv/dt 10,000 V/µs Typical thermal resistance (2) RθJA RθJL 45 14 °C/W Storage temperature range TSTG –55 to +175 °C TJ +175 °C Maximum operating junction temperature Electrical Characteristics (T Max. instantaneous forward voltage(1) Maximum DC reverse current at rated DC blocking voltage A = 25°C unless otherwise noted) IF = 2A, TJ = 25°C IF = 2A, TJ = 125°C VF 0.79 0.65 V TJ = 25°C TJ = 125°C IR 10 4 µA mA Notes: (1) Pulse test: 300µs pulse width, 1% duty cycle (2) P.C.B. mounted with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas Document Number 88718 25-Jun-02 www.vishay.com 1 SB2H90 and SB2H100 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 1 – Forward Current Derating Curve Fig. 2 – Typical Instantaneous Forward Characteristics 100 Instantaneous Forward Current (A) Average Forward Current (A) 4.0 3.0 2.0 1.0 0 0 25 50 75 100 125 150 175 10 TJ = 175°C TJ = 100°C TJ = 150°C 1 TJ = 125°C 0.1 TJ = 25°C 0.01 200 0 0.2 Ambient Temperature (°C) Fig. 3 – Typical Reverse Characteristics 0.8 1.0 1.2 1.4 Fig. 4 – Typical Junction Capacitance 10000 10000 TJ = 150°C 1000 Junction Capacitance (pF) Instantaneous Reverse Current (µA) 0.6 0.4 Instantaneous Forward Voltage (V) TJ = 125°C 100 TJ = 100°C 10 1 1000 100 0.1 TJ = 25°C 0.01 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) 10 0.1 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Transient Thermal Impedance Transient Thermal Impedance (°C/W) 100 10 1 0.01 0.1 1 10 100 t — Pulse Duration (sec.) www.vishay.com 2 Document Number 88718 25-Jun-02