Plastic-Encapsulate Transistors Features BC847BS (NPN) Ideally Suited for Automatic Insertion For Switching and AF Amplifier Applications Ultra-Small Surface Mount Package Mechanical Data Case: SOT-363, Molded Plastic Case material - UL Flammability Rating Classification 94V - 0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K1F (See Page 2) Weight: 0.006 grams Ordering & Date Code Information: See Page 2 Maximum Ratings C2 B1 E1 E2 B2 C1 SOT-363 @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5.0 V IC 100 mA Peak Collector Current ICM 200 mA Peak Base Current IBM 200 mA Power Dissipation (Note 1) Pd 200 mW RJA 500 °C/W Tj, TSTG -55 to +125 °C Collector Current Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on ourwebsite at http://www.diodes.com/datasheets/ap02001.pdf. Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit hFE 200 — 450 — VCE = 5.0V, IC = 2.0mA Collector-Emitter Saturation Voltage (Note 2) VCE(SAT) — — — 100 400 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Saturation Voltage (Note 2) IC = 10mA, IB = 0.5mA DC Current Gain (Note 2) Test Condition VBE(SAT) — 755 — mV Base-Emitter Voltage (Note 2) VBE 580 665 700 mV VCE = 5.0V, IC = 2.0mA Collector Cutoff Current (Note 2) ICBO ICBO — — — 15 5.0 nA µA VCB = 30V, IE = 0 VCB = 30V, Tj = 125°C Emitter Cutoff Current (Note 2) IEBO — — 100 nA VEB = 5.0V, IC = 0 fT 100 — — MHz Collector-Base Capacitance CCBO — — 1.5 pF VCE = 5.0V, IC = 10mA, f = 100MHz VCB = 10V, f = 1.0MHz Emitter-Base Capacitance CEBO — 11 — pF VEB = 0.5V, f = 1.0MHz Gain Bandwidth Product GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P2-P1 Plastic-Encapsulate Transistors BC847BS Typical Characteristics 1000 250 VCE = 5V 100°C hFE, DC CURRENT GAIN Pd, POWER DISSIPATION (mW) (see Note 1) 200 150 100 TA = 25°C 100 -50°C 10 50 1 0 0 100 200 0.01 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Derating Curve fT, GAIN BANDWIDTH PRODUCT (MHz) VCE, COLLECTOR SATURATION VOLTAGE (V) 1000 IC / IB = 20 0.4 0.3 TA = 100°C 0.1 25°C -50°C 0 0.1 1.0 10 100 TA = 25°C VCE = 10V 5V 2V 100 10 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3, Collector Saturation Voltage vs Collector Current Notes: 1.0 IC, COLLECTOR CURRENT (mA) Fig. 2, DC Current Gain vs Collector Current 0.5 0.2 0.1 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Gain Bandwidth Product vs Collector Current 1. Device mounted on FR4 printed circuit board. GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P2-P2