AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. N-Channel VDS= 30V P-Channel -30V ID= 3.5A (VGS=10V) -2.7A (VGS=-10V) RDS(ON) RDS(ON) < 50mΩ (VGS=10V) < 100mΩ (VGS=-10V) < 70mΩ (VGS=4.5V) < 170mΩ (VGS=-4.5V) D1 D2 TSOP6 Top View Top View Bottom View G1 1 S2 2 6 5 S1 G2 3 4 D2 D1 G1 S1 Pin1 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Max n-channel Drain-Source Voltage 30 VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current ID TA=70°C C IDM TA=25°C Power Dissipation B PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev5: Mar 2011 G2 Steady-State Steady-State Max p-channel -30 Units V ±20 ±20 V 3.5 -2.7 3 -2.1 20 -15 1.15 1.15 0.73 0.73 -55 to 150 TJ, TSTG Symbol t ≤ 10s RθJA RθJL www.aosmd.com S2 p-channel Typ 78 106 64 A W °C Max 110 150 80 Units °C/W °C/W °C/W Page 1 of 9 AO6602 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 20 TJ=125°C VGS=4.5V, ID=2A gFS Forward Transconductance VDS=5V, ID=3.5A Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance ±100 nA 2 2.5 V 40 50 61 77 52 70 mΩ 1 V 1.5 A 210 pF A mΩ 12 0.79 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance µA 5 VGS=10V, ID=3.5A Coss V TJ=55°C VSD Units 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ 170 VGS=0V, VDS=15V, f=1MHz S 35 pF 23 pF 3.5 5.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.05 5 nC Qg(4.5V) Total Gate Charge 2 3 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=3.5A 1.7 0.55 nC 1 nC 4.5 ns tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Body Diode Reverse Recovery Time IF=3.5A, dI/dt=100A/µs 7.5 Qrr Body Diode Reverse Recovery Charge IF=3.5A, dI/dt=100A/µs 2.5 VGS=10V, VDS=15V, RL=4.2Ω, RGEN=3Ω Turn-Off Fall Time 1.5 ns 18.5 ns 15.5 ns 10 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 5: Mar 2011 www.aosmd.com Page 2 of 9 AO6602 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10 VDS=5V 10V 7V 8 9 ID(A) ID (A) 12 4V 4.5V 3.5V 6 125°C 4 3 25°C 2 VGS=3V 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 0.5 5 1 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.8 Normalized On-Resistance 70 VGS=10V ID=3.5A 1.6 60 RDS(ON) (mΩ ) 6 VGS=4.5V 1.4 50 1.2 40 VGS=10V 30 VGS=4.5V ID=2A 1 17 5 2 10 0.8 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 120 ID=3.5A 1.0E+01 40 1.0E+00 125°C 80 IS (A) RDS(ON) (mΩ ) 100 1.0E-01 125°C 1.0E-02 60 25°C 25°C 1.0E-03 40 1.0E-04 20 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 5: Mar 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 9 AO6602 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 300 VDS=15V ID=3.5A 250 Capacitance (pF) VGS (Volts) 8 Ciss 200 6 150 4 100 Coss 2 50 Crss 0 0 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 100.0 5 10 V (Volts) 15 20 25 DS Figure 8: Capacitance Characteristics 30 1000 TA=25°C 10µs ID (Amps) RDS(ON) limited 100 100µs 1ms 1.0 Power (W) 10.0 10 10ms TJ(Max)=150°C TA=25°C 0.1 10s DC 1 0.00001 0.0 0.01 0.1 1 VDS (Volts) 10 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 1 0.001 0.1 10 1000 100 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=150°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 Rev 5: Mar 2011 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 100 1000 Page 4 of 9 AO6602 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 5: Mar 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 9 AO6602 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V VDS=-30V, VGS=0V -30 IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage ID(ON) On state drain current VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-2.7A RDS(ON) -1.4 Forward Transconductance Diode Forward Voltage IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance µA ±100 nA -1.9 -2.4 V 82 100 115 140 130 170 A mΩ mΩ 5.5 -0.8 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance V -15 VGS=-4.5V, ID=-2A VDS=-5V, ID=-2.7A IS=-1A,VGS=0V gFS Units -5 TJ=125°C VSD Max -1 TJ=55°C Static Drain-Source On-Resistance Coss Typ 197 VGS=0V, VDS=-15V, f=1MHz S -1 V -1.5 A 240 pF 42 pF 26 37 pF 7.2 11.0 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.3 5.2 nC Qg(4.5V) Total Gate Charge 2.2 3 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=-15V, ID=2.7A 3.5 0.7 nC 1.1 nC 7.5 ns VGS=10V, VDS=-15V, RL=5.55Ω, RGEN=3Ω 4.1 ns 11.8 ns IF=-2.7A, dI/dt=100A/µs 11.3 Body Diode Reverse Recovery Charge IF=-2.7A, dI/dt=100A/µs 4.4 Body Diode Reverse Recovery Time 3.8 ns 14 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 5: Mar 2011 www.aosmd.com Page 6 of 9 AO6602 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 VDS=-5V -10V -5V -6V -8V 12 -4.5V 8 -ID(A) -ID (A) 9 -4V 6 4 6 3 125°C 2 VGS=-3.5V 25°C 0 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 0.5 5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 200 Normalized On-Resistance 1.6 180 RDS(ON) (mΩ ) 160 VGS=-10V ID=-2.7A 1.4 VGS=-4.5V 140 17 5 2 VGS=-4.5V 10 I =-2A 1.2 120 100 VGS=-10V 80 60 1 D 0.8 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 300 ID=-2.7A 1.0E+01 40 1.0E+00 220 -IS (A) RDS(ON) (mΩ ) 260 125°C 180 1.0E-01 125°C 1.0E-02 25°C 140 1.0E-03 25°C 100 1.0E-04 60 1.0E-05 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 5: Mar 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 9 AO6602 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300 10 VDS=-15V ID=-2.7A 250 Ciss Capacitance (pF) 8 -VGS (Volts) 200 6 150 4 Coss 100 50 2 Crss 0 0 1 2 Qg (nC) 3 4 Figure 7: Gate-Charge Characteristics 0 0 5 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 100.0 TA=25°C 10µs -ID (Amps) RDS(ON) limited 100 100µs 1.0 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C 0.1 1 -VDS (Volts) 10 10s DC 0.0 0.01 Power (W) 10.0 10 100 1 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.001 0.1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F) 1000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=150°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 Rev 5: Mar 2011 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 100 1000 Page 8 of 9 AO6602 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 5: Mar 2011 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 9 of 9