APM2506NUB N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/60A , RDS(ON)=4.8mΩ(typ.) @ VGS=10V RDS(ON)=7mΩ(typ.) @ VGS=4.5V • • • • 1 2 3 G D S Super High Dense Cell Design Avalanche Rated Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of TO-251 D Applications • Power Management in Desktop Computer or DC/DC Converters G S N-Channel MOSFET Ordering and Marking Information Package Code UB : TO-251 Operating Junction Temp. Range C : -55 to 150° C Handling Code PB : Plastic Bag Lead Free Code L : Lead Free Device Blank : Original Device APM2506N Lead Free Code Handling Code Temp. Range Package Code APM2506N UB : APM2506N XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 1 www.anpec.com.tw APM2506NUB Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA = 25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 25 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 40 A TC=25°C 150 TC=100°C 80 TC=25°C 60 TC=100°C 50 TC=25°C 50 TC=100°C 20 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC * 2.5 Thermal Resistance-Junction to Case A A W °C/W Mounted on PCB of Minimum Footprint IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJA Thermal Resistance-Junction to Ambient TA=25°C 150 TA=100°C 80 TA=25°C 12 TA=100°C 5.5 TA=25°C 1.25 TA=100°C 0.25 100 A A W °C/W Note: * Current limited by bond wire. Copyright ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 2 www.anpec.com.tw APM2506NUB Electrical Characteristics Symbol (TA = 25°C unless otherwise noted) Parameter Test Condition Drain-Source Avalanche Ratings EAS Drain-Source Avalanche Energy ID=20A, L=0.5mH Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA IDSS VGS(th) IGSS RDS(ON) a Zero Gate Voltage Drain Current VDS=20V, VGS=0V Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, V DS=0V Drain-Source On-state Resistance Diode Characteristics a VSD Diode Forward Voltage trr b Qrr b Reverse Recovery Time Reverse Recovery Charge APM2506NUB Min. Typ. Max. 100 25 1.3 1.8 1 µA 2.5 V ±100 nA 4.8 6 VGS=4.5V, IDS=20A 7 9 0.7 1.1 ISD=10A, dISD/dt =100A/µs mJ V VGS=10V, IDS=40A ISD=20A, VGS=0V Unit mΩ V 30 ns 14 nC b Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V, VDS=15V, Frequency=1.0MHz 2.1 Ω 3100 pF 680 520 19 VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω Turn-off Fall Time Gate Charge Characteristics Qg Total Gate Charge 1.0 20 ns 62 43 b Qgs Gate-Source Charge Qgd Gate-Drain Charge 37.5 VDS=15V, VGS=4.5V, IDS=40A 9.4 56 nC 21 Notes: a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 3 www.anpec.com.tw APM2506NUB Typical Characteristics Drain Current Power Dissipation 70 60 60 ID - Drain Current (A) Ptot - Power (W) 50 40 30 20 10 50 40 30 20 10 o TC=25 C, VG=10V o 0 TC=25 C 0 0 20 40 60 80 100 120 140 160 180 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance ID - Drain Current (A) Normalized Transient Thermal Resistance it im )L n s(o Rd 1ms 10ms 100ms 10 1s DC 1 o TC=25 C 0.1 0.1 20 40 60 80 100 120 140 160 180 Tj - Junction Temperature (°C) 300 100 0 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 Mounted on minimum pad o RθJA :100 C/W 1E-3 1E-4 70 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 2 4 www.anpec.com.tw APM2506NUB Typical Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 100 12 RDS(ON) - On - Resistance (mΩ) VGS=3.5,4,5,6,7,8,9,10V ID - Drain Current (A) 80 60 3V 40 2.5V 20 0 0.0 0.4 0.8 1.2 1.6 10 8 6 VGS=10V 4 2 0 2.0 VGS=4.5V 0 20 VDS - Drain-Source Voltage (V) 40 60 Gate Threshold Voltage 14 1.6 IDS =250µA Normalized Threshold Vlotage ID= 40A RDS(ON) - On - Resistance (mΩ) 100 ID - Drain Current (A) Drain-Source On Resistance 12 10 8 6 4 2 80 1.4 1.2 1.0 0.8 0.6 0.4 0.2 1 2 3 4 5 6 7 8 9 0.0 -50 -25 10 25 50 75 100 125 150 Tj - Junction Temperature (°C) VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 0 5 www.anpec.com.tw APM2506NUB Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2.00 100 VGS = 10V IDS = 40A 1.50 IS - Source Current (A) Normalized On Resistance 1.75 1.25 1.00 0.75 0.50 o Tj=150 C 10 o Tj=25 C 1 0.25 o RON@Tj=25 C: 4.8mΩ 0.00 -50 -25 0 25 50 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 75 100 125 150 Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Capacitance Gate Charge 5000 10 Frequency=1MHz VDS=15V 9 VGS - Gate-source Voltage (V) C - Capacitance (pF) 4000 Ciss 3000 2000 1000 Coss Crss 0 7 6 5 4 3 2 1 0 0 ID = 40A 8 5 10 15 20 25 10 20 30 40 50 60 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 0 6 www.anpec.com.tw APM2506NUB Avalanche Test Circuit and Waveforms V DS tp L V DSX(SUS) V DS DUT IAS RG V DD V DD IL tp EAS 0.01 Ω t AV Switching Time Test Circuit and Waveforms V DS RD V DS DUT 90% V GS RG V DD 10% V GS tp t d (on) t r Copyright ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 7 t d (off) t f www.anpec.com.tw APM2506NUB Packaging Information TO-251 A b2 E1 E1 H D D1 C1 D1 E C b A1 e1 Millimeters Dim A A1 b b2 C C1 D D1 E E1 e1 H Min. 2.20 1.02 0.50 5.20 0.40 0.40 5.40 5.30 6.35 4.40 4.50 12.90 Copyright ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 Inches Max. 2.40 1.27 0.88 5.46 0.60 0.60 6.20 -6.70 5.40 4.70 15.25 8 Min. 0.087 0.040 0.020 0.205 0.016 0.016 0.213 0.209 0.250 0.173 0.177 0.508 Max. 0.094 0.050 0.035 0.215 0.024 0.024 0.244 -0.264 0.213 0.185 0.600 www.anpec.com.tw APM2506NUB Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP Critical Zone T L to T P Temperature Ramp-up TL tL Tsmax Tsmin Ramp-down ts Preheat 25 t 25 °C to Peak Tim e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 9 www.anpec.com.tw APM2506NUB Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures 3 3 Package Thickness Volum e m m Volume mm <350 ≥350 <2.5 m m 240 +0/-5°C 225 +0/-5°C ≥2.5 m m 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Temperatures 3 3 3 Package Thickness Volume mm Volume mm Volume mm <350 350-2000 >2000 <1.6 m m 260 +0°C* 260 +0°C* 260 +0°C* 1.6 m m – 2.5 m m 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 m m 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 10 www.anpec.com.tw