Rohm BD90640EFJ-C 1ch step-down switching regulator Datasheet

Datasheet
Input Voltage 3.5 V to 36 V
Output SW Current 4 A / 2.5A / 1.25A
1ch Step-Down Switching Regulator
BD906xx-C series
Key Specifications
General Description
 Input Voltage Range :
3.5 V to 36 V
(Initial startup is over 3.9 V)
 Output Voltage Range :
0.8 V to VIN
 Output Switch Current :
4 A / 2.5 A / 1.25 A (Max)
 Switching Frequency :
50 kHz to 600 kHz
 Reference Voltage Accuracy :±2% (-40 °C to +125 °C)
 Shutdown Circuit Current :
0 µA (Typ)
 Operating Temperature Range(Ta) : -40 °C to +125 °C
BD906xx-C series is a step-down switching regulator
with integrated POWER MOS FET and have the
capability to withstand high input voltage, providing a free
setting function of operating switching frequency with
external resistor. This switching regulator features a wide
input voltage range (3.5 V to 36 V, Absolute maximum 42
V) and operating temperature range (-40 °C to +125 °C).
Furthermore, an external synchronization input pin
enables synchronous operation with external clock.
Package
Features
W(Typ) x D(Typ) x H(Max)
9.395mm x 10.540mm x 2.005mm
4.90mm x 6.00mm x 1.00mm
HRP7
HTSOP-J8
(Note 1)
 AEC-Q100 Qualified
 Integrated Pch POWER MOS FET
 Low Dropout: 100 % ON Duty Cycle
 External Synchronization Function
 Soft Start Function: 1.38 ms (fSW = 500 kHz)
 Current Mode Control
 Over Current Protection
 Low Supply Voltage Error Prevention
 Thermal Shut Down Protection
 Short Circuit Protection
 High power HRP7 package mounted
 Compact and High power HTSOP-J8 package
mounted
 Load dump up to 42 V.
(Note 1 : Grade 1)
HRP7
HTSOP-J8
Applications
 Automotive Battery Powered Supplies
(Cluster Panels, Car Multimedia)
 Industrial / Consumer Supplies
 Other electronic equipment
Typical Application Circuit
L1
PVIN
SW
VO
D1
VIN
CO R1
C2
VIN
Cbulk
CIN
FB
RT
VEN / SYNC
CRT
RRT
EN / SYNC
GND
○Product structure：Silicon monolithic integrated circuit
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© 2014 ROHM Co., Ltd. All rights reserved.
CVTSZ22111・14・001
R2
VC
R3
C1
○This product has no designed protection against radioactive rays
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TSZ02201-0T1T0AL00130-1-2
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BD906xx-C series
Lineup
Product
Name
HRP7
BD90640HFP-C
BD90620HFP-C
-
HTSOP-J8
BD90640EFJ-C
BD90620EFJ-C
BD90610EFJ-C
4A
2.5 A
1.25 A
Output Switch Current
Input Maximum Ratings
Input Voltage Range
42 V
(Note 1)
3.5 V to 36 V
0.16 Ω (Typ)
POWER MOSFET ON Resistance
Power
Dissipation
HRP7
(Note 2)
HTSOP-J8
6.98 W
(Note 3)
3.10 W
(Note 1) Initial startup is over 3.9 V
(Note 2) Reduce by 55.8 mW / °C (Above 25°C),
(JESD51 -5 / -7 standard FR4 114.3 mm × 76.2 mm × 1.60 mmt 4-layer Top copper foil: ROHM recommended footprint + wiring to measure /
2,3 inner layers and Copper foil area on the reverse side of PCB 74.2 mm × 74.2 mm, copper (top & reverse side / inner layers) 70 μm / 35 μm.
Thermal via : pitch 1.2 mm, diameter Φ0.30 mm )
(Note 3) Reduce by 24.8 mW / °C (Above 25°C),
(JESD51 -5 / -7 standard FR4 114.3 mm × 76.2 mm × 1.60 mmt 4-layer Top copper foil: ROHM recommended footprint + wiring to measure /
2,3 inner layers and Copper foil area on the reverse side of PCB 74.2 mm × 74.2 mm, copper (top & reverse side / inner layers) 70 μm / 35 μm.
Thermal via : pitch 1.2 mm, diameter Φ0.30 mm)
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BD906xx-C series
Pin Configuration
(TOP VIEW)
(TOP VIEW)
1. VC
2. VIN
3. FB
4. GND
1. RT
8. FB
2. SW
7. PVIN
3. EN / SYNC
6. VIN
4. GND
5. VC
FIN
5. RT
6. SW
7. EN / SYNC
HRP7
HTSOP-J8
Pin Description
Pin No.
Symbol
Function
Pin No
Symbol
Function
1
VC
Error Amp Output
1
RT
Switching Frequency Setting
Resistor Connection
2
VIN
Power Supply Input
2
SW
Switching Output
3
FB
Output Voltage Feedback
3
EN / SYNC
Enable /
External Clock Input
4
GND
GND
4
GND
GND
RT
Switching Frequency Setting
Resistor Connection
5
VC
Error Amp Output
5
6
SW
Switching Output
7
EN / SYNC
Enable /
External Clock Input
FIN
-
GND
6
(Note 1)
VIN
7
PVIN
8
Power Supply Input
(Note 1)
Power Supply Input
FB
Output Voltage Feedback
(Note 1) VIN and PVIN must be shorted.
HRP7
HTSOP-J8
Block Diagram
PVIN
7
UVLO
VIN
VREF
VREG
OCP
6
VREF
3
EN / SYNC
SCP_
LATCH
Current
Sense
∑
SLOPE
OCP
OCP
TSD
ERROR_AMP
+
-
+
+
SOFT_
START
VC
Q
R
DRV
Pch POWER
MOSFET
FB
8
SW
EN
UVLO
TSD
OCP
SCP_LATCH
OFF
RT
OSC
0.8V
GND
4
TSD
CUR
_COMP
+
-
+
+
SOFT_
START
5
HRP7
VC
PWM_LATCH
S
Q
R
DRV
Pch POWER
MOSFET
SW
EN
UVLO
TSD
OCP
SCP_LATCH
OFF
GND
HTSOP-J8
3/40
1
TSD
ERROR_AMP
6
1
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© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
SLOPE
+
-
PWM_LATCH
S
∑
SCP
0.55V
CUR
_COMP
Current
Sense
OCP
TSD
+
0.55V
SCP_LATCH
SCP_
LATCH
5
OCP
0.8V
EN / SYNC
RT
OSC
SCP
FB
VREG
EN / SYNC
SCP_LATCH
3
UVLO
OCP
EN / SYNC
7
UVLO
VIN
UVLO
2
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15.Sep.2015 Rev.005
2
4
BD906xx-C series
Description of Blocks
1.
ERROR_AMP
The ERROR_AMP block is an error amplifier and its inputs are the reference voltage 0.8 V (Typ) and the “FB” pin
voltage. (Refer to recommended examples on p.16 to 17). The output “VC” pin controls the switching duty, the output
voltage is set by “FB” pin with external resistors. Moreover, the external resistor and capacitor are required to COMP pin
as phase compensation circuit (Refer to phase compensation selection method on p.17 to 18).
2.
SOFT_START
The function of the SOFT_START block is to prevent the overshoot of the output voltage VO through gradually
increasing the input of the error amplifier when the power supply turns ON, which also results to the gradual increase of
the witching duty. The soft start time is set to 1.38 ms (Typ , fSW = 500 kHz).
The soft start time is changed by setting of the switching frequency. (Refer to p.18)
3.
EN / SYNC
The IC is in normal operation when the voltage on the “EN / SYNC” pin is more than 2.6 V. The IC is shut down when the
voltage on the “EN / SYNC” pin is less than 0.8 V. Furthermore, external synchronization is possible when external clock
are applied to the “EN / SYNC” pin. The switching frequency range of the external synchronization is within ±20 % of the
switching frequency and is limited by the external resistance connected to the RT pin.
ex) When RRT is 27 kΩ (f = 500 kHz), the switching frequency range of the external synchronization is 400 kHz to 600
kHz.
4.
OSC (Oscillator)
This circuit generates the clock pulses that are input to SLOPE block. The switching frequency is determined by the
current going through the external resistor RT at constant voltage of ca. 0.8V. The switching frequency can be set in the
range between 50 kHz to 600 kHz (Refer to p.16 Figure 13). The output of the OSC block send clock signals to
PWM_LATCH. Moreover the generated pulses of the OSC block are also used as clock of the counter of SS and
SCP_LATCH blocks.
5.
SLOPE
This block generates saw tooth waves using the clock generated by the OSC block. The generated saw tooth waves are
combined with the current sense and sent to the CUR_COMP.
6.
CUR_COMP (Current Comparator)
The CUR_COMP block compares the signals between the ERROR_AMP and the combined signals from the SLOPE
block and current sense. The output signals are sent to the PWM_LATCH block.
7.
PWM_LATCH
The PWM_LATCH block is a LATCH circuit. The OSC block output (set) and CUR_COMP block output (reset) are the
inputs of this block. The PWM_LATCH block outputs PWM signals.
8.
TSD (Thermal Shut down)
The TSD block prevents thermal destruction / thermal runaway of the IC by turning OFF the Pch POWER MOSFET
output when the temperature of the chip reaches more than about 175 °C (Typ). When the chip temperature falls to a
specified level, the switching will resume. However, since the TSD is designed to protect the IC, the chip temperature
should be provided with the thermal shutdown detection temperature of less than approximately Tjmax = 150 °C.
9.
OCP (Over Current Protection)
OCP is activated when the voltage between the drain and source (on-resistance × load current) of the Pch POWER
MOSFET when it is ON, exceeds the reference voltage which is internally set within the IC. This OCP is a self-return
type. When OCP is activated, the ON duty will be small, and the output voltage will decrease. However, this protection
circuit is only effective in preventing destruction from sudden accident. It does not support the continuous operation of
the protection circuit (e.g. if a load, which significantly exceeds the output current capacitance, is connected).
10. SCP (Short Circuit Protection) and SCP-LATCH
While OCP is activated, and if the output voltage falls below 70 %, SCP will be activated. When SCP is active, the output
will be turned OFF after a period of 1024 pulse. It extends the time that the output is OFF to reduce the average output
current. In addition, during startup of the IC, this feature is masked until it reaches a certain output voltage to prevent the
startup failure.
11. UVLO (Under Voltage Lock-Out)
UVLO is a protection circuit that prevents low voltage malfunction. It prevents malfunction of the internal circuit from
sudden rise and fall of power supply voltage. It monitors the VIN power supply voltage and the internal regulator voltage.
If VIN is less than the threshold voltage 3.24 V (Typ), the Pch POWER MOSFET output is OFF and the soft-start circuit
will be restarted. This threshold voltage and release voltage have a hysteresis of 280 mV (Typ).
12. DRV (Driver)
This circuit drives the gate electrode of the Pch POWER MOSFET output. It reduces the increase of the Pch POWER
MOSFET’s on-resistance by switching the driving voltage when the power supply voltage drop.
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BD906xx-C series
Absolute Maximum Ratings (Ta = 25 °C)
Parameter
Symbol
Rating
Unit
Input Power Supply Voltage
VIN, PVIN
-0.3 to +42
V
EN / SYNC Pin Voltage
VEN / SYNC
-0.3 to VIN
V
RT, VC, FB Pin Voltage
VRT, VVC, VFB
-0.3 to +7
V
HRP7
Power Dissipation
(Note2)
6.98
(Note1)
Pd
HTSOP-J8
W
(Note3)
3.10
Storage Temperature Range
Maximum Junction Temperature
Tstg
-55 to +150
°C
Tjmax
150
°C
(Note 1) Do not however exceed Pd.
(Note 2) Reduce by 55.8 mW / °C, (Above 25°C),
(JESD51 -5 / -7 standard FR4 114.3 mm × 76.2 mm × 1.60 mmt 4-layer Top copper foil: ROHM recommended footprint + wiring to measure /
2,3 inner layers and Copper foil area on the reverse side of PCB 74.2 mm × 74.2 mm, copper (top & reverse side / inner layers) 70 µm / 35 µm.
Thermal via : pitch 1.2 mm, diameter Φ0.30 mm )
(Note 3) Reduce by 24.8 mW / °C, (Above 25°C),
(JESD51 -5 / -7 standard FR4 114.3 mm × 76.2 mm × 1.60 mmt 4-layer Top copper foil: ROHM recommended footprint + wiring to measure /
2,3 inner layers and Copper foil area on the reverse side of PCB 74.2 mm × 74.2 mm, copper (top & reverse side / inner layers) 70 µm / 35 µm.
Thermal via : pitch 1.2 mm, diameter Φ0.30 mm )
Caution: Exceeding the absolute maximum rating for supply voltage, operating temperature or other parameters can result in damages to or destruction of the
chip. In this event it also becomes impossible to determine the cause of the damage (e.g. short circuit, open circuit, etc). Therefore, if any special mode
is being considered with values expected to exceed the absolute maximum ratings, implementing physical safety measures, such as adding fuses,
should be considered.
Recommended Operating Conditions
Parameter
Symbol
Limit
Unit
Min
Max
VIN, PVIN
3.5
36
V
Topr
-40
+125
°C
BD90640HFP/EFJ-C
ISW40
-
4
A
BD90620HFP/EFJ-C
ISW20
-
2.5
A
BD90610EFJ-C
ISW10
-
1.25
A
VO
0.8
VIN
V
Min ON Pulse Width
TON_MIN
250
-
ns
Switching Frequency
fSW
50
600
kHz
Switching Frequency Set Resistance
RRT
22
330
kΩ
Synchronous Operation Frequency Range
fSYNC
50
600
kHz
fSYNC_RT
-20
+20
%
DSYNC
10
90
%
-
µF
Operating Power Supply Voltage
(Note 1)
Operating Temperature Range
Output Switch Current
(Note2)
Output Voltage
Synchronous Operation Frequency
External Clock ON Duty
Capacitance of Input Capacitor
CIN
2.4
(Note 3)
(Note 1) Initial startup is over 3.9 V.
(Note 2) The Limits include output DC current and output ripple current.
(Note 3) Ceramic capacitor is recommended. The capacitor value including temperature change, DC bias change, and aging change must be larger than
minimum value (Refer to p.15). Also, the IC might not function properly when the PCB layout or the position of the capacitor is not good. Please check
“Notes on the PCB Layout” on page 30.
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BD906xx-C series
Electrical Characteristics (Unless otherwise specified, Ta = - 40 °C to +125 °C, VIN = 13.2 V, VEN / SYNC = 5 V)
Limit
Parameter
Symbol
Unit
Conditions
Min
Typ
Max
ISDN
-
0
5
μA
VEN / SYNC = 0 V,
Ta < 105 °C
IIN
-
2.2
3.3
mA
Io = 0 A, VFB = 2 V
RON
-
0.16
0.32
Ω
BD90640HFP / EFJ-C
ISWLIMIT40
4.0
6.4
-
A
BD90620HFP / EFJ-C
ISWLIMIT20
2.5
4.3
-
A
BD90610EFJ-C
ISWLIMIT10
1.25
2.20
-
A
IOLK
-
0
5
μA
VIN = 36 V,
VEN / SYNC = 0 V,
Ta < 105 °C
Reference Voltage 1
VREF1
0.792
0.800
0.808
V
VVC = VFB, Ta = 25 °C
Reference Voltage 2
VREF2
0.784
0.800
0.816
V
VVC = VFB
Reference Voltage Input
Regulation
ΔVREF
-
0.5
-
%
3.5 V ≤ VIN ≤ 36 V
IB
-1.0
-
+1.0
μA
IVCSINK
-76.5
-54.0
-31.5
μA
VC Source Current
IVCSOURCE
31.5
54.0
76.5
μA
Trans Conductance
GEA
135
270
540
μA / V
Soft Start Time
TSS
1.13
1.38
1.63
ms
GCS
-
5.2
-
A/V
fSW
450
500
550
kHz
ΔfSW
-
1
-
%
Threshold Voltage
VEN / SYNC
0.8
1.9
2.6
V
SYNC Current
IEN / SYNC
-
23
50
μA
UVLO ON Mode Voltage
VUVLO_ON
-
3.24
3.50
V
UVLO OFF Mode Voltage
VUVLO_OFF
-
3.52
3.90
V
UVLO Hysteresis
VUVLO_HYS
-
280
-
mV
Whole chip
Shutdown Circuit Current
Circuit Current
SW Block
POWER MOSFET ON Resistance
Operating Output
Switch Current Of
Overcurrent
(Note 1)
Protection
Output Leak Current
ISW = 30 mA
Error Amp Block
Input Bias Current
VC Sink Current
VVC = 1.25 V,
VFB = 1.3 V
VVC = 1.25 V,
VFB = 0.3 V
IVC = ±10 μA,
VVC = 1.25 V
RRT = 27 kΩ
Current Sense Part
Trans Conductance
OSC Block
Switching Frequency
Frequency Input Regulation
RRT = 27 kΩ
3.5 V ≤ VIN ≤ 36 V
Enable / Sync Input Block
VEN / SYNC = 5 V
UVLO
(Note 1) The Limit include output DC current and output ripple current.
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BD906xx-C series
4.0
4.0
3.5
3.5
3.0
From Top
Ta = 125 °C
Ta = 25 °C
Ta = -40 °C
2.5
Circuit Current :IIN [mA]
Shutdown Circuit Current : ISDN[µA]
Typical Performance Curves
2.0
1.5
1.0
0.5
3.0
2.5
2.0
1.5
From Top
Ta = 125 °C
Ta = 25 °C
Ta = -40 °C
1.0
0.5
0.0
0.0
0
5
10
15
20
25
30
Input Voltage : VIN [V]
35
40
0
Figure 1. Shutdown Circuit Current vs Input Voltage
10
15
20
25
30
Input Voltage : VIN [V]
35
40
Figure 2. Circuit Current vs Input Voltage
0.30
10
From Top
BD90640HFP / EFJ-C
BD90620HFP / EFJ-C
BD90610EFJ-C
9
0.25
Switch Current Limit : ISW [A]
POWER MOSFET ON Resistance : RON[Ω]
5
0.20
0.15
From Top
VIN = 3.5 V
VIN = 13.2 V
0.10
0.05
8
7
6
5
4
3
2
1
0.00
Ta = 25 °C
0
-40
-20
0
20 40 60 80 100 120
Ambient Temperature : Ta [˚C]
Figure 3. POWER MOSFET ON Resistance vs
Ambient Temperature
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TSZ22111・15・001
0
5
10
15
20
25
30
Input Voltage : VIN [V]
35
40
Figure 4. Switch Current Limit vs Input Voltage
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BD906xx-C series
Typical Performance Curves – continued
5.0
816
812
Reference Voltage : VREF[V]
Leak Current : IOLK [μA]
4.0
3.0
2.0
1.0
808
804
800
796
792
788
VIN = 13.2 V
0.0
VIN = 13.2 V
784
-40
-20
0
20 40 60 80 100 120
Ambient Temperature : Ta [˚C]
-40
-20
0
20 40 60 80 100 120
Ambient Temperature : Ta[˚C]
Figure 6. Reference Voltage vs Ambient Temperature
Figure 5. Leak Current vs Ambient Temperature
1.63
1.0
1.58
1.53
Soft Start Time : TSS[μS]
Input Bias Current :IB [μA]
0.8
0.6
0.4
1.48
1.43
1.38
1.33
1.28
1.23
0.2
VIN = 13.2 V
VFB = 0.8 V
1.18
RRT = 27 kΩ
1.13
0.0
-40
-20
0
20 40 60 80 100 120
Ambient Temperature : Ta [˚C]
-20
0
20 40 60 80 100 120
Ambient Temperature : Ta[˚C]
Figure 8. Soft Start Time vs Ambient Temperature
Figure 7. Input Bias Current vs Ambient Temperature
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BD906xx-C series
Typical Performance Curves – continued
550
EN / SYNC Threshold Voltage : VEN/SYNC [V]
2.6
540
Switching Frequency : fSW [kHz]
530
520
510
500
490
480
470
VIN = 13.2 V
RRT = 27 kΩ
460
-20
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
450
-40
2.4
-40
0
20
40
60
80 100 120
Ambient Temperature : Ta[˚C]
0
20 40 60 80 100 120
Ambient Temperature : Ta [˚C]
Figure 10. EN / SYNC Threshold Voltage
vs Ambient Temperature
Figure 9. Switching Frequency vs Ambient Temperature
450
100
400
90
From Top
Ta = 125 °C
Ta = 25 °C
Ta = -40 °C
350
300
80
From Top
VO = 8.8 V
VO = 5 V
VO = 3.3 V
70
Efficiency [%]
EN / SYNC Current : IEN / SYNC [μA]
-20
250
200
150
60
50
BD90640HFP / EFJ-C IO<3.79 A
BD90620HFP / EFJ-C IO<2.29 A
BD90610EFJ-C IO<1.04 A
40
30
100
20
50
10
VIN = 13.2 V
fSW = 500 kHz
Ta = 25 °C
0
0
0
5
10
15
20
25
30
35
EN / SYNC Voltage : VEN / SYNC [V]
40
0
Figure 11. EN / SYNC Current vs EN / SYNC Voltage
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1
2
Output Current : IO[A]
3
Figure 12. Efficiency vs Output Current
TSZ02201-0T1T0AL00130-1-2
15.Sep.2015 Rev.005
BD906xx-C series
Timing Chart
1.
Start Up Operation
VIN
EN / SYNC
Threshold Voltage
EN / SYNC
SS
SW
VO
Internal slope
VC
2.
Over Current Protection Operation
Normal pulse repetition at
SW
the following
Over Current
Detect Level
IL
VO
FB
Short Current
Detect Level
VC
Internal SOFT START
＊T
OFF
TOFF*
TOFF*
TOFF*
TSS*
, ＊TSS terminal
TOFF = 1024 / fSW [s]
ex) fSW = 500 [kHz] , TOFF = 2.048 [ms]
tSS = 1.38 [ms] (Typ)
Output Voltage
Short Release
Output Voltage
Short to GND
Auto reset
(Soft Start Operation)
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BD906xx-C series
External Synchronization Function
In order to activate the external synchronization function, connect the frequency-setting resistor to the RT pin and then input
a synchronizing signal to the EN / SYNC pin.
The external synchronization operation frequency is limited by the external resistance of RRT pin. The allowable setting limit
is within ±20 % of the switching frequency.
ex) When RRT is 27 kΩ (f = 500 kHz), the frequency range of the external synchronization is 400 kHz to 600 kHz.
Furthermore, the pulse wave’s LOW voltage should be under 0.8 V and the HIGH voltage over 2.6 V (when the HIGH voltage
is over 11 V the EN / SYNC input current increases), and the slew rate (rise and fall) under 20 V / µS. The ON Duty of
External clock should be configured between 10 % and 90 %.
The frequency will synchronize with the external clock operation frequency after three external sync pulses is sensed.
L1
PVIN
SW
VO
D1
VIN
CO R1
C2
VIN
Cbulk
CIN
FB
RT
VEN / SYNC
CRT
RRT
EN / SYNC
GND
R2
VC
R3
C1
Eternal SYNC Sample Circuit
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BD906xx-C series
Selection of Components Externally Connected
Necessary parameters in designing the power supply are as follows:
Parameter
Symbol
Specification Case
Input Voltage
VIN
6 V to 18 V
Output Voltage
VO
5V
Output Ripple Voltage
ΔVPP
20 mVp-p
IO
Min 1.0 A / Typ 1.5 A / Max 2.0 A
Input Range
Switching Frequency
Operating Temperature Range
fSW
500 kHz
Topr
-40 °C to +105 °C
L1
PVIN
SW
VO
D1
VIN
CO R1
C2
VIN
Cbulk
CIN
FB
RT
VEN / SYNC
CRT
RRT
EN / SYNC
GND
R2
VC
R3
C1
Application Sample Circuit
1.
Selection of the inductor L1 value
When the switching regulator supplies current continuously to the load, the LC filter is necessary for the smoothness of
the output voltage. The Inductor ripple current ΔIL that flows to the inductor becomes small when an inductor with a large
inductance value is selected. Consequently, the voltage of the output ripple also becomes small. It is the trade-off
between the size and the cost of the inductor.
The inductance value of the inductor is shown in the following equation:
(𝑉𝐼𝑁(𝑀𝑎𝑥) −𝑉𝑜)×𝑉𝑜
𝐿=𝑉
𝐼𝑁(𝑀𝑎𝑥) ×𝑓𝑆𝑊 ×∆𝐼𝐿
[H]
Where:
𝑉𝐼𝑁 (𝑀𝑎𝑥) is the maximum input voltage
ΔIL is set to approximately 30 % of IO. To avoid discontinuous operation, ΔIL shall be set to make SW continuously
pulsing (IL keeps continuously flowing). The condition of the continuous operation is shown in the following equation:
(𝑉𝐼𝑁(𝑀𝑎𝑥) −𝑉𝑂 )×𝑉𝑂
𝐼𝑂 > 2×𝑉
𝐼𝑁(𝑀𝑎𝑥) ×𝑓𝑆𝑊 ×𝐿
[A]
Where:
𝐼𝑂 is the Load Current
V
V
SW
SW
t
A
t
A
IO
IL
ΔIL
IL
IO
t
Continuous Operation
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BD906xx-C series
Selection of Components Externally Connected – continued
The smaller the ΔIL, each the Inductor core loss (iron loss), the loss due to ESR of the output capacitor, and the ΔVPP will
be reduced. ΔVPP is shown in the following equation.
∆𝐼𝐿
∆𝑉𝑃𝑃 = ∆𝐼𝐿 × 𝐸𝑆𝑅 + 8×𝐶
[V]
𝑂 ×𝑓𝑆𝑊
・・・・・(a)
Where:
𝐸𝑆𝑅 is the equivalent series resistance of output capacitor
𝐶𝑂 is the output condenser capacity
Generally, even if ΔIL is somewhat large, ΔVPP of the target is satisfied because the ceramic capacitor has super-low
ESR. In that case, it is also possible to use it by the discontinuous operation. The inductance value can be set small as
an advantage.
It contributes to the miniaturization of the application because of the lower rated current, smaller inductor is possible if
the inductance value is small. The disadvantages are the increase in core losses in the inductor, the decrease in
maximum output current, and the deterioration of the response. When other capacitors (electrolytic capacitor, tantalum
capacitor, and electro conductive polymer etc.) are used for output capacitor CO, check the ESR from the manufacturer's
data sheet and determine the ΔIL to fit within the acceptable range of ΔVPP. Especially in the case of electrolytic
capacitor, because the capacity decrease at the low temperature is remarkable, ΔVPP increases. When using capacitor
at the low temperature, it is necessary to note this.
The maximum output electric current is limited to the overcurrent protection working current as shown in the following
equation.
𝐼𝑂(𝑀𝑎𝑥) = 𝐼𝑆𝑊𝐿𝐼𝑀𝐼𝑇(𝑀𝑖𝑛) −
∆𝐼𝐿
2
[A]
Where:
𝐼𝑂(𝑀𝑎𝑥) is the maximum output current
𝐼𝑆𝑊𝐿𝐼𝑀𝐼𝑇(𝑀𝑖𝑛) is the OCP operation current (Min)
A
ISWLIMIT (Min)
IO
IL
IL peak
t
In current mode control, when the IC is operating in ON Duty ≥ 50 % and in the condition of continuous operation,The
sub-harmonic oscillation may happen. The slope compensation circuit is integrated into the IC in order to prevent
sub-harmonic oscillation. The sub-harmonic oscillation depends on the rate of increase of output switch current. If the
inductor value is too small, the sub-harmonic oscillation may happen. And if the inductor value is too large, the feedback
loop may not achieve stability. The inductor value which prevents sub-harmonic oscillation is shown in the following
equation.
2D−1
𝐿 ≥ 2(1−𝐷) × 𝑅𝑠 ×
D=
𝑉𝐼𝑁 (𝑀𝑖𝑛) −𝑉𝑂
𝑚
[H]
𝑉𝑂
𝑉𝐼𝑁(𝑀𝑖𝑛)
𝑚 = 6 × 𝑓𝑆𝑊 × 10−6
Where:
𝐷 is the switching pulse ON Duty.
𝑅𝑆 is the coefficient of current sense(4.0 µA / A)
𝑚 is the slope of slope compensation current
The shielded type (closed magnetic circuit type) is the recommended type of inductor. Open magnetic circuit type can
be used for low cost applications if noise issues are not concerned. But in this case, an influence other parts by
magnetic field radiation is considered. An enough space layout between each parts should be noted.
For ferrite core inductor type, please note that magnetic saturation may occur. It is necessary not to saturate the core in
all cases. Precautions must be taken into account on the given provisions of the current rating because it differs
according to each manufacturer.
Please confirm the rated current at the maximum ambient temperature of the application to the manufacturer.
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Selection of Components Externally Connected – continued
2.
Selection of output Capacitor CO
The output capacitor is selected on the basis of ESR that is required from the equation (a). ΔVPP can be reduced by
using a capacitor with a small ESR. The ceramic capacitor is the best option that meets this requirement. The ceramic
capacitor contributes to the size reduction of the application because it has small ESR. Please confirm frequency
characteristic of ESR from the datasheet of the manufacturer, and consider ESR value is low in the switching frequency
being used. It is necessary to consider the ceramic capacitor because the DC biasing characteristic is remarkable. For
the voltage rating of the ceramic capacitor, twice or more than the maximum output voltage is usually required. By
selecting these high voltages rating, it is possible to reduce the influence of DC bias characteristics. Moreover, in order
to maintain good temperature characteristics, the one with the characteristic of X7R or more is recommended. Because
the voltage rating of a mass ceramic capacitor is low, the selection becomes difficult in the application with high output
voltage. In that case, please select electrolytic capacitor. Please consider having a voltage rating of 1.2 times or more of
the output voltage when using electrolytic capacitor. Electrolytic capacitors have a high voltage rating, large capacity,
small amount of DC biasing characteristic, and are generally cheap. Because main failure mode is OPEN, it is effective
to use electrolytic capacitor for applications when reliability is required such as in-vehicle. But there are disadvantages
such as, ESR is relatively high, and decreases capacitance value at low temperatures. In this case, please take note
that ΔVPP may increase at low temperature conditions. Moreover, consider the lifetime characteristic of this capacitor
because there is a possibility for it to dry up.
A tantalum capacitor and a conductive polymer hybrid capacitor have excellent temperature characteristic unlike an
electrolytic capacitor. Moreover, as these ESR is smaller than an electrolytic capacitor, a ripple voltage is relatively-small
over wide temperature range. The design is facilitated because there is little DC bias characteristic like an electrolytic
capacitor. Normally, for voltage rating, a tantalum capacitor is selected twice the output voltage, and for conductive
polymer hybrid capacitor is selected 1.2 times more than the output voltage. The disadvantage of a tantalum capacitor is
that the failure mode is SHORT, and the breakdown voltage is low. It is not generally selected in the application that
reliability such as in automotive is demanded. The failure mode of an electro conductive polymer hybrid capacitor is
OPEN. Though it is effective for reliability, the disadvantage is generally expensive.
In case of Pch step-down switching regulator, when the input voltage decreases and the voltage between input and
output becomes small, switching pulse begin to skip before the Pch MOSFET completely turns on. Because of this the
output ripple voltage may increase. To improve performance in this condition, following is recommended:
1. To use low ESR capacitor like ceramic or conductive polymer hybrid capacitor.
2. Higher value of capacitance.
These capacitors are rated in ripple current. The RMS values of the ripple current that can be obtained in the following
equation must not exceed the ratings ripple current.
𝐼𝐶𝑂(𝑅𝑀𝑆) =
∆𝐼𝐿
√12
[A]
Where:
𝐼𝐶𝑂(𝑅𝑀𝑆) is the value of the ripple electric current
In addition, total value of capacitance with output line Co(Max), respect to CO, choose capacitance value less than the
value obtained by the following equation.
𝐶𝑂(𝑀𝑎𝑥) =
𝑇𝑆𝑆(𝑀𝑖𝑛) ×(𝐼𝑂𝐿𝐼𝑀𝐼𝑇(𝑀𝑖𝑛) −𝐼𝑂𝑆𝑇𝐴𝑅𝑇(𝑀𝑎𝑥) )
𝑉𝑂
[F]
Where:
𝐼𝑆𝑊𝐿𝐼𝑀𝐼𝑇(𝑀𝑖𝑛) is the OCP operation switch current (Min)
𝑇𝑆𝑆(𝑀𝑖𝑛) is the Soft Start Time (Min)
𝐼𝑆𝑊𝑆𝑇𝐴𝑅𝑇(𝑀𝑎𝑥) is the maximum output current during startup
The startup failure may happen when the limits from the above-mentioned are exceeded. Especially if the capacitance
value is extremely large, over-current protection may be activated by the inrush current at startup, and the output does
not start. Please confirm this on the actual application. For stable transient response, the loop is dependent on the C O.
Please select after confirming the setting of the phase compensation circuit.
Also, in case of large changing input voltage and load current, select the capacitance in accordance with verifying that
the actual application meets with the required specification.
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Selection of Components Externally Connected – continued
3.
Selection of capacitor CIN / Cbulk input
The input capacitor is usually required for two types of decoupling: capacitors CIN and bulk capacitors Cbulk. Ceramic
capacitors with values more than 2.4 µF are necessary for the decoupling capacitor. Ceramic capacitors are effective by
being placed as close as possible to the VIN pin. Voltage rating is recommended to more than 1.2 times the maximum
input voltage, or twice the normal input voltage. The capacitor value including temperature change, DC bias change, and
aging change must be larger than minimum value. Also, the IC might not function properly when the PCB layout or the
position of the capacitor is not good. Please check “Notes on the PCB Layout” on page 24.
The bulk capacitor is option. The bulk capacitor prevents the decrease in the line voltage and serves a backup power
supply to keep the input potential constant. The low ESR electrolytic capacitor with large capacity is suitable for the bulk
capacitor. It is necessary to select the best capacitance value as per set of application. n that case, please consider not to
exceed the rated ripple current of the capacitor.
The RMS value of the input ripple electric current is obtained in the following equation.
𝐼𝐶𝐼𝑁(𝑅𝑀𝑆) = 𝐼𝑂(𝑀𝐴𝑋) ∙
√𝑉𝑂 ×(𝑉𝐼𝑁 −𝑉𝑂 )
𝑉𝐼𝑁
[A]
Where:
𝐼𝐶𝐼𝑁(𝑅𝑀𝑆) is the RMS value of the input ripple electric current
In addition, in automotive and other applications requiring high reliability, it is recommended that capacitors are connected
in parallel to accommodate a multiple of electrolytic capacitors to minimize the chances of drying up. It is recommended by
making it into two series + two parallel structures to decrease the risk of ceramic capacitor destruction due to short circuit
conditions. The line has been improved to the summary respectively by 1pack in each capacitor manufacturer and
confirms two series and two parallel structures to each manufacturer.
When impedance on the input side is high because of wiring from the power supply to VIN is long, etc., and then high
capacitance is needed. In actual conditions, it is necessary to verify that there is no problem when IC operation turns off or
overshoot the output due to the change in VIN at transient response.
4.
Selection of output voltage setting registance R1, R2
Output voltage is governed by the following equation.
𝑉𝑂 = 0.8 ×
𝑅1+𝑅2
𝑅2
[V]
Please set feedback resistor R2 below 30 kΩ to reduce the error margin by the bias current. In addition, since power
efficiency is reduced with a small R1 + R2, please set the current flowing through the feedback resistor to be small as
possible than the output current IO.
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Selection of Components Externally Connected – continued
5.
Selection of the schottky barrier diode D1
The schottky barrier diode that has small forward voltage and short reverse recovery time is used for D1. The important
parameters for the selection of the schottky barrier diode are the average rectified current and direct current
inverse-direction voltage. Average rectified current IF (AVG) is obtained in the following equation:
𝐼𝐹(𝐴𝑉𝐺) = 𝐼𝑂(𝑀𝐴𝑋) ×
𝑉𝐼𝑁(𝑀𝐴𝑋) −𝑉𝑂
𝑉𝐼𝑁(𝑀𝐴𝑋)
[A]
Where:
𝐼𝐹(𝐴𝑉𝐸) is the average rectified current
The absolute maximum rating of the schottky barrier diode rectified current average is more than 1.2 times IF(AVG) and
the absolute maximum rating of the DC reverse voltage is greater than or equal to 1.2 times the maximum input voltage.
The loss of D1 is obtained in the following equation:
𝑃𝐷𝑖 = 𝐼𝑂(𝑀𝐴𝑋) ×
𝑉𝐼𝑁(𝑀𝐴𝑋)− 𝑉𝑂
𝑉𝐼𝑁(𝑀𝐴𝑋)
× 𝑉𝐹 [W]
Where:
𝑉𝐹 is the forward voltage in 𝐼𝑂(𝑀𝐴𝑋) condition
Selecting a diode that has small forward voltage, and short reverse recovery time is highly effective. Please select a diode
with 0.65 V Max of forward voltage. Please note that there is possibility of internal element destruction when a diode with a
larger VF than this is used. Because the reverse recovery time of the schottky barrier diode is so short, that it is possible to
disregard, the switching loss can be disregarded. When it is necessary for the diode to endure the state of output
short-circuit, power dissipation ratings and the heat radiation ability are needed to be considered. The rated current that is
required is about 1.5 times the overcurrent detection value.
6.
Selection of the switching frequency setting resistance RRT, CRT
The internal switching frequency can be set by connecting a resistor between RT and GND.
The range that can be set is 50 kHz to 600 kHz, and the relation between resistance and the switching frequency is decided as
shown in the figure below. When setting beyond this range, there is a possibility that there is no oscillation and IC operation cannot
be guaranteed.
CRT is required to stabilize switching frequency. Typical capacitance value is 100pF. Actually, the changes in the frequency
characteristic are greatly affected by the type and the condition (temperature, etc.) of parts that are used, the wire
routing and layout of the PCB.
Switching Frequency : fSW [kHz]
700
600
RRT [kΩ]
22
fSW [kHz]
599
RRT [kΩ]
100
fSW [kHz]
151
500
24
27
555
500
110
120
139
128
400
30
33
455
418
130
150
119
104
300
36
39
386
359
160
180
98.
88
200
43
47
329
303
200
220
80
73
100
51
56
281
258
240
270
68
61
62
68
235
216
300
330
55
51
75
82
197
182
91
165
0
0
100
200
300
400
500
Switching Frequency Setting
Resistance : RRT [kΩ]
Figure 13. Switching Frequency
vs Switching Frequency Setting Resistance
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Selection of Components Externally Connected – continued
7.
Selection of the phase compensation circuit R3, C1, C2
A good high frequency response performance is achieved by setting the 0 dB crossing frequency, fc, (frequency at 0 dB
gain) high. However, you need to be aware of the trade-off correlation between speed and stability. Moreover, DC / DC
converter application is sampled by switching frequency, so the gain of this switching frequency must be suppressed. It
is necessary to set the 0 dB crossing frequency to 1 / 10 or less of the switching frequency. In summary, target these
characteristics as follows:
・When the 0 dB crossing frequency, fc, phase lag is less than or equal to 135 ˚(More than 45 ˚ phase margin).
・0 dB crossing frequency, fc, is 1 / 10 times or less of the switching frequency. To improve the responsiveness, higher
the phase compensation is set by the capacitor and resistor which are connected in series to the VC pin.
Achieving stability by using the phase compensation is done by cancelling the f P1 and fP2 (error amp pole and
power stage pole) of the regulation loop by use of fZ1. fP1, fP2 and fZ1 are determined in the following equations.
1
𝑓𝑍1 = 2𝜋×𝑅3×𝐶1
1
𝑓𝑃1 = 2𝜋×𝐶
𝑂 ×𝑅𝑂
𝐺
𝐸𝐴
𝑓𝑃2 = 2𝜋×𝐶1×𝐴
𝑉
[Hz]
[Hz]
[Hz]
Also, by inserting a capacitor in C2, phase lead fZ2 can be added.
1
𝑓𝑍2 = 2𝜋×𝑅1×𝐶2
[Hz]
Where:
𝑅𝑂 is the resistance assumed actual load[Ω] = Output Voltage[V] / Output Current[A]、
𝐺𝐸𝐴 is the Error Amp trans conductance (270 µA / V)
𝐴𝑉 is the Error Amp Voltage Gain (78 dB)
SW
Vo
C2
L1
Vo
R1
FB
D1
ERROR_AMP
CO
RO
R2
VREF
VC
R3
C1
Setting Phase Compensation Circuit
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Selection of Components Externally Connected – continued
By setting zero and pole settings to suitable position, stable frequency characteristic can be achieved. The typical
setting of fZ1, fZ2 is as below.
1.
fZ1 setting is to cancel fP1.
For instance, application which load current is 500 mA ~ 3.5 A, typical setting of FZ1, FP1 setting in
Examples1 (P.19) is as below.
Application
0.5 × 𝑓𝑝1 ≤ 𝑓𝑍1 ≤ 5 × 𝑓𝑝1
(fP1＝362 Hz [IO=500 mA], 2.53 kHz [IO =3.5 A] fZ1=1.69 kHz)
2.
fZ2 setting is to shift the 0 dB crossing frequency to higher frequency or to improvephase margin near the 0 dB
crossing frequency.
Typical setting of FZ2, FP1 inApplication Examples3 (P.23) is as below.
0.5 × 𝑓𝑧𝑒𝑟𝑜 ≤ 𝑓𝑍2 ≤ 2 × 𝑓𝑧𝑒𝑟𝑜
(fZERO＝31.6 kHz [IO=400 mA] fZ2=20.6 kHz)
Actually, the changes in the frequency characteristic are greatly affected by the type and the condition (temperature,
etc.) of parts that are used, the wire routing and layout of the PCB.
Please confirm stability and responsiveness in actual equipment.
To check the actual frequency characteristics, use a FRA or a gain-phase analyzer. Moreover, the method of observing
the degree of change by the loading response can be performed when these measuring instruments are not available.
The phase margin degree is said to be low when there are lots of variation quantities after the output is made to change
under no load to maximum load. It can also be observed that the phase margin degree is low when there is a lot of
ringing frequencies after the transition of no load to maximum load, usually two times or more ringing than the standard.
However, a quantitative phase margin degree cannot be confirmed.
Load
Maximum load
IO
Inadequate phase margin
Output voltage
VO
Adequate phase margin.
t
0
Measurement of Load Response
8.
Setting of soft start time (TSS)
The soft start function is necessary to prevent inrush of coil current and output voltage overshoot at startup.
TSS will be changed by setting the switching frequency.
The production tolerance of TSS is ±18.1%.TSS can be calculated by using the equation.
𝑇𝑆𝑆 =
690.8
𝑓𝑠𝑤
[s]
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BD906xx-C series
Application Examples1
Parameter
Symbol
Specification case
Product Name
IC
BD90640HFP / EFJ-C
Input Voltage
VIN
6 V to 18 V
VO
5V
ΔVPP
20 mVp-p
Output Current
IO
Min 1.0 A / Typ 1.5 A / Max 2.0 A
Switching Frequency
fSW
500 kHz
Operating Temperature
Topr
-40 °C ~ +105 °C
Output Voltage
Output Ripple Voltage
Specification Example 1
L1
PVIN
SW
VO
CO R100
D1
VIN
R1
VIN
Cbulk
CIN
C2
FB
RT
VEN / SYNC
CRT
RRT
EN / SYNC
GND
R2
VC
R3
C1
Reference Circuit 1
No
Package
Parameters
Part name (series)
Type
Manufacturer
R1
R2
1608
43 kΩ, 1 %, 1 / 10 W
MCR03 series
Chip resistor
ROHM
1608
8.2 kΩ, 1 %, 1 / 10 W
MCR03 series
Chip resistor
ROHM
R3
1608
20 kΩ, 1 %, 1 / 10 W
MCR03 series
Chip resistor
ROHM
R100
-
SHORT
-
-
-
RRT
1608
27 kΩ, 1 %, 1 / 10 W
MCR03 series
Chip resistor
ROHM
C1
1608
4700 pF, R, 50 V
GCM series
Ceramic capacitor
Murata
C2
-
OPEN
-
-
-
CRT
1608
100 pF, CH, 50 V
GCM series
Ceramic capacitor
Murata
CIN
3225
4.7 μF, X7R, 50 V
GCM series
Ceramic capacitor
Murata
CO
3225
44 μF (22 μF, X7R, 16 V × 2)
GCM series
Ceramic capacitor
Murata
Cbulk
-
220 μF, 50 V
CD series
Electrolytic capacitor
NICHICON
L1
W 9.7 x H 3.8 x L 10 mm
15 μH
CLF10040T-150M-H
Inductor
TDK
D1
CPD
Average I = 6 A Max
RB095BM-40FH
Schottky Diode
ROHM
3
Parts List 1
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BD906xx-C series
Characteristic Data (Application Examples 1)
100
90
Tektronix DPO5054
80
Efficiency [%]
70
60
VO 10 mV / div＠AC
50
40
30
20
10
0
0.0
0.5
1.0
1.5
Output Current : IO[A]
2.0
Figure 15. Output Ripple Voltage 1
(VIN = 13.2 V, IO = 1.5 A, 1 μs / div)
Figure 14. Efficiency vs Output Current
(Conversion Efficiency 1 VIN = 13.2 V)
Tektronix DPO5054
FRA5087
VO 50 mV / div＠AC
Phase
IO 200 mA / div＠DC offset 1.5A
Gain
Figure 16. Frequency Characteristic 1
(VIN = 13. 2 V, IO = 1.5 A)
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Figure 17. Load Response 1
(VIN = 13.2 V, IO = 1.5 A → 2.0 A, 200 μs / div)
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BD906xx-C series
Application Examples 2
Parameter
Product Name
Input Voltage
Output Voltage
Output Ripple Voltage
Output Current
Switching Frequency
Operating Temperature
Symbol
IC
VIN
VO
ΔVPP
IO
fSW
Specification case
BD90620HFP / EFJ-C
6 V to 18 V
5V
20 mVp-p
Min 0.4 A / Typ 0.8 A / Max 1.5 A
500 kHz
-40 °C ~ +105°C
Topr
Specification Example 2
L1
PVIN
SW
VO
CO R100
D1
VIN
R1
VIN
Cbulk
CIN
C2
FB
RT
VEN / SYNC
CRT
RRT
EN / SYNC
GND
R2
VC
R3
C1
Reference Circuit 2
No
Package
Parameters
Part name (series)
Type
Manufacturer
R1
1608
43 kΩ, 1 %, 1 / 10 W
MCR03 series
Chip resistor
ROHM
R2
1608
8.2 kΩ, 1 %, 1 / 10 W
MCR03 series
Chip resistor
ROHM
R3
1608
20 kΩ, 1 %, 1 / 10 W
MCR03 series
Chip resistor
ROHM
R100
-
SHORT
-
-
-
RRT
1608
27 kΩ, 1 %, 1 / 10 W
MCR03 series
Chip resistor
ROHM
C1
1608
4700 pF, R, 50 V
GCM series
Ceramic capacitor
Murata
C2
-
OPEN
-
-
-
CRT
1608
100 pF, CH, 50 V
GCM series
Ceramic capacitor
Murata
CIN
3225
4.7 μF, X7R, 50 V
GCM series
Ceramic capacitor
Murata
CO
3225
44 μF (22 μF, X7R, 16 V × 2)
GCM series
Ceramic capacitor
Murata
Cbulk
-
220 μF, 50 V
CD series
Electrolytic capacitor
NICHICON
L1
W 9.7 x H 3.8 x L 10 mm
22 μH
CLF10040T-220M-H
Inductor
TDK
D1
CPD
Average I = 6 A Max
RB095BM-40FH
Schottky Diode
ROHM
3
Parts List 2
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
21/40
TSZ02201-0T1T0AL00130-1-2
15.Sep.2015 Rev.005
BD906xx-C series
Characteristic Data (Application Examples 2)
100
90
Tektronix DPO5054
80
Efficiency [%]
70
60
VO 10 mV / div＠AC
50
40
30
20
10
0
0.0
0.5
1.0
Output Current : IO[A]
1.5
Figure 18. Efficiency vs Output Current
(Conversion Efficiency 2 VIN = 13.2 V)
Figure 19. Output Ripple Voltage 2
(VIN = 13.2 V, IO = 0.8 A, 1 μs / div)
Tektronix DPO5054
FRA5087
VO 50 mV / div＠AC
Phase
Gain
IO 200 mA / div＠DC
offset 0.8A
Figure 20. Frequency Characteristic 2
(VIN = 13.2 V, IO = 0.8 A)
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© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
Figure 21. Load ResponseResponse 2
(VIN = 13.2 V, IO = 0.8 A → 1.5 A, 200 μs / div)
22/40
TSZ02201-0T1T0AL00130-1-2
15.Sep.2015 Rev.005
BD906xx-C series
Application Examples 3
Parameter
Product Name
Input Voltage
Output Voltage
Output Ripple Voltage
Output Current
Switching Frequency
Operating Temperature
Symbol
IC
VIN
VO
ΔVPP
IO
fSW
Specification case
BD90610EFJ-C
6 V to 18 V
5V
20 mVp-p
Min 0.1 A / Typ 0.4 A / Max 0.8 A
500 kHz
-40 °C ~ +105°C
Topr
Specification Example 3
L1
PVIN
SW
VO
CO R100
D1
VIN
R1
VIN
Cbulk
CIN
C2
FB
RT
VEN / SYNC
CRT
RRT
EN / SYNC
GND
R2
VC
R3
C1
Reference Circuit 3
No
Package
Parameters
Part name (series)
Type
Manufacturer
R1
1608
43 kΩ, 1 %, 1 / 10 W
MCR03 series
Chip resistor
ROHM
R2
1608
8.2 kΩ, 1 %, 1 / 10 W
MCR03 series
Chip resistor
ROHM
R3
1608
33 kΩ, 1 %, 1 / 10 W
MCR03 series
Chip resistor
ROHM
R100
-
SHORT
-
-
-
RRT
1608
27 kΩ, 1 %, 1 / 10 W
MCR03 series
Chip resistor
ROHM
C1
1608
10000 pF, R, 50 V
GCM series
Ceramic capacitor
Murata
C2
1608
180pF,CH,50V
GCM series
Ceramic capacitor
Murata
CRT
1608
100 pF, CH, 50 V
GCM series
Ceramic capacitor
Murata
CIN
3225
4.7 μF, X7R, 50 V
GCM series
Ceramic capacitor
Murata
CO
3225
44 μF (22 μF, X7R, 16 V × 2)
GCM series
Ceramic capacitor
Murata
Cbulk
-
220 μF, 50 V
CD series
Electrolytic capacitor
NICHICON
L1
W 9.7 x H 3.8 x L 10 mm
100 μH
CLF10040T-101M-H
Inductor
TDK
D1
PMDS
Average I = 3 A Max
RB055L-40TF
Schottky Diode
ROHM
3
Parts List 3
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
23/40
TSZ02201-0T1T0AL00130-1-2
15.Sep.2015 Rev.005
BD906xx-C series
Characteristic Data (Application Examples 3)
100
Tektronix DPO5054
90
80
Efficiency [%]
70
60
VO 10 mV / div＠AC
50
40
30
20
10
0
0.0
0.2
0.4
0.6
Output Current : IO[A]
0.8
Figure 23. Output Ripple Voltage 3
(VIN = 13.2 V, IO = 0.4 A, 1 μs / div)
Figure 22. Efficiency vs Output Current
(Conversion Efficiency 3 VIN = 13.2 V)
Tektronix DPO5054
FRA5087
VO 50 mV / div＠
AC
Phase
Gain
IO 200 mA / div＠DC
Figure 24. Frequency Characteristic 3
(VIN = 13.2 V, IO = 0.4 A)
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© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
Figure 25. Load Response 3
(VIN = 13.2 V, IO = 0.4 A → 0.8 A, 200 μs / div)
24/40
TSZ02201-0T1T0AL00130-1-2
15.Sep.2015 Rev.005
BD906xx-C series
Application Examples 4
Parameter
Product Name
Input Voltage
Output Voltage
Output Ripple Voltage
Output Current
Switching Frequency
Operating Temperature
Symbol
IC
VIN
VO
ΔVPP
IO
fSW
Specification case
BD90640HFP / EFJ-C
3.5 V to 18 V
3.3 V
20 mVp-p
Min 1.0 A / Typ 1.5 A / Max 2.0A
500 kHz
-40 °C ~ +125°C
Topr
Specification Example 4
L1
PVIN
SW
VO
CO R100
D1
VIN
R1
VIN
Cbulk
CIN
C2
FB
RT
VEN / SYNC
CRT
RRT
EN / SYNC
GND
R2
VC
R3
C1
Reference Circuit 4
No
Package
Parameters
Part name (series)
Type
Manufacturer
R1
1608
47 kΩ, 1 %, 1 / 10 W
MCR03 series
Chip resistor
ROHM
R2
1608
15 kΩ, 1 %, 1 / 10 W
MCR03 series
Chip resistor
ROHM
R3
1608
10 kΩ, 1 %, 1 / 10 W
MCR03 series
Chip resistor
ROHM
R100
-
SHORT
-
-
-
RRT
1608
27 kΩ, 1 %, 1 / 10 W
MCR03 series
Chip resistor
ROHM
C1
1608
6800 pF, R, 50 V
GCM series
Ceramic capacitor
Murata
C2
-
OPEN
-
-
-
CRT
1608
100 pF, CH, 50 V
GCM series
Ceramic capacitor
Murata
CIN
3225
4.7 μF, X7R, 50 V
GCM series
Ceramic capacitor
Murata
CO
3225
44 μF (22 μF, X7R, 16 V × 2)
GCM series
Ceramic capacitor
Murata
Cbulk
-
220 μF,35 V × 2
CZ series
Electrolytic capacitor
NICHICON
L1
W 9.7 x H 3.8 x L 10 mm
15 μH
CLF10040T-150M-D
Inductor
TDK
D1
CPD
Average I = 6 A Max
RB095BM-40FH
Schottky Diode
ROHM
3
Parts List 4
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
25/40
TSZ02201-0T1T0AL00130-1-2
15.Sep.2015 Rev.005
BD906xx-C series
Characteristic Data (Application Examples 4)
100
Tektronix DPO5054
90
80
Efficiency [%]
70
60
VO 10 mV / div＠AC
50
40
30
20
10
0
0.0
0.5
1.0
1.5
Output Current : IO[A]
2.0
Figure 26. Efficiency vs Output Current
(Conversion Efficiency 4 VIN = 13.2 V)
Figure 27. Output Ripple Voltage 4
(VIN = 13.2 V, IO = 1.5 A, 1 μs / div)
FRA5087
Tektronix DPO5054
VO 50 mV / div＠AC
Phase
Gain
IO 200 mA / div＠DC offset
1.5A
Figure 28. Frequency Characteristic 4
(VIN = 13.2 V, IO = 1.5 A)
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© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
Figure 29. Load Response 4
(VIN = 13.2 V, IO = 1.5 A → 2.0 A, 200 μs / div)
26/40
TSZ02201-0T1T0AL00130-1-2
15.Sep.2015 Rev.005
BD906xx-C series
Application Examples 5
Parameter
Product Name
Input Voltage
Output Voltage
Output Ripple Voltage
Output Current
Switching Frequency
Operating Temperature
Symbol
IC
VIN
VO
ΔVPP
IO
fSW
Specification case
BD90640HFP / EFJ-C
9 V to 18 V
8.8 V
100 mVp-p
Min 1.0 A / Typ 1.5 A / Max 2.0 A
500 kHz
-40 °C ~ +125°C
Topr
Specification Example 5
L1
PVIN
SW
VO
CO R100
D1
VIN
R1
VIN
Cbulk
CIN
C2
FB
RT
VEN / SYNC
CRT
RRT
EN / SYNC
GND
R2
VC
R3
C1
Reference Circuit 5
No
Package
Parameters
Part name (series)
Type
Manufacturer
R1
1608
51 kΩ, 1 %, 1 / 10 W
MCR03 series
Chip resistor
ROHM
R2
1608
5.1 kΩ, 1 %, 1 / 10 W
MCR03 series
Chip resistor
ROHM
R3
1608
91 kΩ, 1 %, 1 / 10 W
MCR03 series
Chip resistor
ROHM
R100
-
SHORT
-
-
-
RRT
1608
27 kΩ, 1 %, 1 / 10 W
MCR03 series
Chip resistor
ROHM
C1
1608
10000 pF, R, 50 V
GCM series
Ceramic capacitor
Murata
C2
-
OPEN
-
-
-
CRT
1608
100 pF, CH, 50 V
GCM series
Ceramic capacitor
Murata
CIN
3225
4.7 μF, X7R, 50 V
GCM series
Ceramic capacitor
Murata
CO
-
270 μF, 25 V
HVP series
Cbulk
-
220 μF, 35 V × 2
CZ series
Electrolytic capacitor
NICHICON
L1
W 9.7 x H 3.8 x L 10 mm
22 μH
CLF10040T-220M-D
Inductor
TDK
D1
CPD
Average I = 6 A Max
RB095BM-40FH
Schottky Diode
ROHM
3
Hybrid
capacitor
SUNCON
Parts List 5
www.rohm.com
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TSZ22111・15・001
27/40
TSZ02201-0T1T0AL00130-1-2
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BD906xx-C series
Characteristic Data (Application Examples 5)
100
Tektronix DPO5054
90
80
Efficiency [%]
70
60
VO 10 mV / div＠AC
50
40
30
20
10
0
0.0
0.5
1.0
1.5
Output Current : IO[A]
2.0
Figure 31. Output Ripple Voltage 5
(VIN = 13.2 V, IO = 1.5 A, 1 μs / div)
Figure 30. Efficiency vs Output Current
(Conversion5 Efficiency VIN = 13.2 V)
FRA5087
Tektronix DPO5054
VO 50 mV / div＠AC
Phase
Gain
IO 200 mA / div＠DC offset
1.5A
Figure 32. Frequency Characteristic 5
(VIN = 13.2 V, IO = 1.5 A)
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© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
Figure 33. Load Response 5
(VIN = 13.2 V, IO = 1.5 A → 2.0 A, 500 μs / div)
28/40
TSZ02201-0T1T0AL00130-1-2
15.Sep.2015 Rev.005
BD906xx-C series
Automotive Power Supply Line Circuit
BATTERY
LINE
Reverse-touching
protection Diode
VIN
L
BD906xx-C series
D
TVS
C
C
π type filter
Figure 34. Filter Circuit
The input filter circuit for EMC measures is depicted in the above Figure 34.
The π type filters are the third order LC filters. When the decoupling capacitor for high frequency is insufficient, it uses π
type filters. An excellent characteristic can be performed as EMI filter by a large attenuation characteristic.
Components for π type filter shall be closely-placed.
TVS (Transient Voltage Suppressors) are used for the first protection of the in automotive power supply line. Because it is
necessary to endure high energy when the load is connected, a general zener diode is insufficient. The following are
recommended. To protect it when the power supply such as BATTERY is accidentally connected in reverse, reverse polarity
protection diode is needed.
Device
Part name (series)
Manufacturer
Device
Part name (series)
Manufacturer
L
CLF series
TDK
TVS
SM8 series
Vishay
D
S3A thru S3M series
Vishay
L
XAL series
Coilcraft
C
CJ series / CZ series
NICHICON
Parts of Automotive Power Supply Line Circuit
Recommended Parts Manufacturer List
Shown below is the list of the recommended parts manufacturers for reference.
Type
Manufacturer
Electrolytic capacitor
NICHICON
www.nichicon.com
Ceramic capacitor
Murata
www.murata.com
Inductor
TDK
Inductor
Coilcraft
www.coilcraft.com
Inductor
SUMIDA
www.sumida.com
Diode
Vishay
www.vishay.com
Diode / Resistor
ROHM
www.rohm.com
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
29/40
URL
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TSZ02201-0T1T0AL00130-1-2
15.Sep.2015 Rev.005
BD906xx-C series
Directions for Pattern Layout of PCB
6.SW
5.RT
4.GND
3.FB
R1
2.VIN
C2
1.VC
R100
7.EN / SYNC
GND
L1
VIN
VO
R3
Cbulk CIN2
D1
CIN1
R2
RRT
C1
CO1
CO2
CRT
Exposed die pad is needed to be connected to GND.
Application Circuit (HRP7)
C2
R100
R1
RRT
L1
VO
CO1
CO2
1.RT
8.FB
2.SW
7.PVIN
R2
CRT
VIN
CIN1
D1
3.EN / SYNC
6.VIN
4.GND
5.VC
CIN2 Cbulk
R3
C1
Exposed die pad is needed to be connected to GND.
Application Circuit (HTSOP-J8)
1.
2.
3.
4.
5.
6.
7.
Arrange the wirings of the wide lines, shown above, as short as possible in a broad pattern.
Locate the input ceramic capacitor CIN as close to the VIN - GND pin as possible.
Locate RRT as close to the RT pin as possible.
Locate R1 and R2 as close to the FB pin as possible, and provide the shortest wiring from the R1 and R2 to the FB pin.
Locate R1 and R2 as far away from the L1 as possible.
Separate Power GND (schottky diode, I/O capacitor`s GND) and Signal GND (RT, VC), so that switching noise does not
have an effect on SIGNAL GND at all.
The feedback frequency characteristics (phase margin) can be measured using FRA by inserting a resistor at the
location of R100. However, this should be shorted during normal operation. R100 is option pattern for measuring the
feedback frequency characteristics.
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TSZ02201-0T1T0AL00130-1-2
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BD906xx-C series
Reference layout pattern
HRP7
EN /
SYNC
EN/
SYNC
PGND
PGND
GND
R100
R2
R1
RRT
CO2
EN
SW
FB
RT
GND
VC
C1
R3
VIN
CO1
CRT
GND
C2
L1
VIN
CIN2
VIN
CIN1
VO
D1
Cbulk
VO
PGND
PGND
Top Layer
Bottom Layer
HTSOP-J8
VIN
PGND
PGND
PGND
VIN
PGND
Cbulk
R100
CO1
CO2
D1
RRT
CRT
R1
C2
R2
VO
FB
SW
PVIN
EN
VIN
GND
VC
CIN1
CIN2
R3
L1
RT
GND
VO
C1
EN /
SYNC
EN/
SYNC
Top Layer
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TSZ22111・15・001
GND
Bottom Layer
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TSZ02201-0T1T0AL00130-1-2
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BD906xx-C series
Power Dissipation
For thermal design, be sure to operate the IC within the following conditions.
(Since the temperatures described hereunder are all guaranteed temperatures, take margin into account.)
1. The ambient temperature Ta is to be 125 °C or less.
2. The chip junction temperature Tj is to be 150 °C or less.
The chip junction temperature Tj can be considered in the following two patterns:
①
To obtain Tj from the package surface center temperature Tt in actual use
𝑇𝑗 = 𝑇𝑡 + 𝜓𝐽𝑇 × 𝑊
②
To obtain Tj from the ambient temperature Ta
𝑇𝑗 = 𝑇𝑎 + 𝜃𝑗𝑎 × 𝑊
＜Reference Value＞
HRP7
＜Reference Value＞
θjc
Top : 22 °C / W
Bottom : 2 °C / W
θja
95.3 °C / W 1-layer PCB
17.9 °C / W 4-layer PCB
ψJT
5 °C / W 1-layer PCB
1 °C / W 4-layer PCB
PCB Size 114.3 mm x 76.2 mm x 1.60 mmt
HTSOP-J8
θjc
Top : 44 °C / W
Bottom : 14 °C / W
θja
189.4 °C / W 1-layer PCB
40.3 °C / W 4-layer PCB
ψJT
21°C / W 1-layer PCB
5°C / W 4-layer PCB
PCB Size 114.3 mmx76.2 mm x 1.60 mmt
The heat loss W of the IC can be obtained by the formula shown below:
𝑊 = 𝑅ON × 𝐼𝑂 2 ×
𝑉𝑂
1
+ 𝑉𝐼𝑁 × 𝐼𝐼𝑁 + × (𝑇𝑟 + 𝑇𝑓) × 𝑉𝐼𝑁 × 𝐼𝑂 × 𝑓𝑠𝑤
𝑉𝐼𝑁
2
Where:
RON is the ON Resistance of IC (Refer to page 7) [Ω]
IO is the Load Current [A]
VO is the Output Voltage [V]
VIN is the Input Voltage [V]
IIN is the Circuit Current (Refer to page 7) [A]
Tr is the Switching Rise Time [s] (Typ:17ns)
Tf is the Switching Fall Time [s] (Typ:17ns)
fsw is the Switching Frequency [Hz]
Tr
Tf
(17 ns)
(17 ns)
①
VIN
①𝑅𝑂𝑁 × 𝐼𝑂 2
SW wave form
1
1
② × (𝑇𝑟 + 𝑇𝑓) × 𝑉𝐼𝑁 × 𝐼𝑂 ×
2
𝑇
GND
T=
= 𝑇𝑟 × 𝑉𝐼𝑁 × 𝐼𝑂 × 𝑓𝑠𝑤
1
fsw
②
SW Wave Form
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TSZ02201-0T1T0AL00130-1-2
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BD906xx-C series
Thermal reduction characteristics
HRP7
7.0
①IC mounted on ROHM standard board based on JEDEC51-3
1 - layer PCB
Board materials : FR-4
Board size : 114.3 mm × 76.2 mm × 1.57 mmt
Top copper foil : footprint + wiring to measure, 70 μm copper.
Power Dissipation : Pd[W]
6.0
②6.98 W
5.0
4.0
②IC mounted on ROHM standard board based on JEDEC51-5,7
4 - layer PCB
Board materials : FR-4
Board size : 114.3 mm × 76.2 mm × 1.60 mmt
Thermal via : pitch 1.20 mm, diameter Φ0.30 mm
Top copper foil : footprint + wiring to measure, 70 μm copper.
2 inner layers copper foil : 74.2 mm × 74.2 mm, 35um copper.
Reverse copper foil : 74.2 mm × 74.2 mm, 70um copper.
3.0
2.0
1.0
①1.31 W
0.0
0
25
50
75
100
125
150
Ambient Temperature : [˚C]
Condition① : θja = 95.3 °C / W
Condition② : θja = 17.9 °C / W
Figure 35. Power Dissipation vs Ambient Temperature
(Thermal Reduction Characteristics (HRP7) )
HTSOP-J8
①IC mounted on ROHM standard board based on JEDEC51-3
1 - layer PCB
Board materials : FR-4
Board size : 114.3 mm × 76.2 mm × 1.57 mmt
Top copper foil : footprint + wiring to measure, 70 μm copper.
Power Dissipation : Pd[W]
7.0
6.0
5.0
4.0
②3.10 W
3.0
2.0
①0.66 W
1.0
②IC mounted on ROHM standard board based on JEDEC51-5,7
4 - layer PCB
Board materials : FR-4
Board size : 114.3 mm × 76.2 mm × 1.60 mmt
Thermal via : pitch 1.20 mm, diameter Φ0.30 mm
Top copper foil : footprint + wiring to measure, 70 μm copper.
2 inner layers copper foil : 74.2 mm × 74.2 mm, 35um copper.
Reverse copper foil : 74.2 mm × 74.2 mm, 70um copper.
0.0
0
25 50 75 100 125 150
Ambient Temperature : [˚C]
Condition① : θja = 189.4 °C / W
Condition② : θja = 40.3 °C / W
Figure 36. Power Dissipation vs Ambient Temperature
(Thermal Reduction Characteristics (HTSOP-J8) )
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TSZ02201-0T1T0AL00130-1-2
15.Sep.2015 Rev.005
BD906xx-C series
I/O Equivalent Circuit
VC
RT
Internal
Supply
VIN
Internal
Supply
Internal
Supply
30kΩ
VIN
1kΩ
1kΩ
VC
1kΩ
RT
30kΩ
1kΩ
SW
4MΩ
FB
Internal
Supply
VIN
PVIN
Internal
Supply
VIN
200kΩ
SW
30kΩ
10kΩ
30kΩ
FB
EN / SYNC
VIN
1333kΩ
400kΩ
EN / SYNC
200kΩ
100kΩ
185kΩ
250kΩ
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BD906xx-C series
Operational Notes
1.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
2.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3.
Ground Voltage
Ensure that no pins are at a potential below the ground pin at any time, even during transient condition. However, pins
that drive inductive loads (e.g. motor driver outputs, DC-DC converter outputs) may inevitably go below ground due to
back EMF or electromotive force. In such cases, the user should make sure that such voltages going below ground will
not cause the IC and the system to malfunction by examining carefully all relevant factors and conditions such as
motor characteristics, supply voltage, operating frequency and PCB wiring to name a few.
4.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
Thermal Consideration
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in
deterioration of the properties of the chip. The absolute maximum rating of the Pd stated in this specification is when
the IC is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. In case of exceeding this absolute maximum rating,
increase the board size and copper area to prevent exceeding the Pd rating.
6.
Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.
The electrical characteristics are guaranteed under the conditions of each parameter.
7.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush
current may flow instantaneously due to the internal powering sequence and delays, especially if the IC
has more than one power supply. Therefore, give special consideration to power coupling capacitance,
power wiring, width of ground wiring, and routing of connections.
8.
Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
9.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
10. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
11. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the
power supply or ground line.
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BD906xx-C series
Operational Notes – continued
12. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
C
E
Pin A
N
P+
P
N
N
P+
N
Pin B
B
Parasitic
Elements
N
P+
N P
N
P+
B
N
C
E
Parasitic
Elements
P Substrate
P Substrate
GND
GND
Parasitic
Elements
GND
Parasitic
Elements
GND
N Region
close-by
Figure 37. Example of monolithic IC structure
13. Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
14. Area of Safe Operation (ASO)
Operate the IC such that the output voltage, output current, and power dissipation are all within the Area of Safe
Operation (ASO).
15. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction
temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below
the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
16. Over Current Protection Circuit (OCP)
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.
17. Disturbance light
In a device where a portion of silicon is exposed to light such as in a WL-CSP, IC characteristics may be affected due
to photoelectric effect. For this reason, it is recommended to come up with countermeasures that will prevent the chip
from being exposed to light.
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BD906xx-C series
Ordering Information
B
D
Product
Name
9
0
6
Output Switch Current
90640 : 4 A
90620 : 2.5 A
90610 : 1.25 A
4
0
H
F
P
Package
HFP : HRP7
EFJ : HTSOP-J8
-
C
T
R
Product Rank
C : for Automotive
Tape and Reel Information
TR : Reel type embossed taping
E2 : Reel type embossed taping
Marking Diagram
HRP7 (TOP VIEW)
Part Number Marking
LOT Number
Output Switch Current
Part Number Marking
4A
BD90640HFP
2.5 A
BD90620HFP
Output Switch Current
Part Number Marking
4A
D90640
2.5 A
D90620
1.25 A
D90610
1PIN MARK
HTSOP-J8 (TOP VIEW)
Part Number Marking
LOT Number
1PIN MARK
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BD906xx-C series
Physical Dimension, Tape and Reel Information
Package Name
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HRP7
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BD906xx-C series
Physical Dimension, Tape and Reel Information
Package Name
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HTSOP-J8
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TSZ02201-0T1T0AL00130-1-2
15.Sep.2015 Rev.005
BD906xx-C series
Revision History
Date
Revision
6.Jan.2014
001
7.Apr.2014
002
17.Oct.2014
003
21.Nov.2014
004
15.Sep.2015
005
Changes
New Release
P.4 Description of OCP remove sentence “Furthermore ~”
P.6 Operating Output Switch Current Of Overcurrent Protection symbol change ISWLIMIT.
P.18 Parts List D1 Package change “PMDS”
P.19 Parts List C2 change “open”
P.21 About Directions for Pattern Layout of PCB
⑥ change “～and Signal GND (RT, VC,),～”
HRP Package version addition
P.5 Recommended Operating Conditions：Capacitance of Input Capacitor addition
P.17 Setting Phase Compensation Circuit：Change SBD symbol
P.28 I/O Equivalent Circuit：Change MOS symbol
The whole : Changing format
Power Dissipation Note : additional detail of board condition
Selection of the switching frequency setting : additional setting CRT
Selection of the phase compensation circuit : additional settings to suitable position of the phase
compensation
Marking diagram [HRP7] : delete “BD90610HFP” .
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Datasheet
Notice
Precaution on using ROHM Products
1.
If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1),
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PAA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2.
ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PAA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
BD90610EFJ-C - Web Page
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Distribution Inventory
Part Number
Package
Unit Quantity
Minimum Package Quantity
Packing Type
Constitution Materials List
RoHS
BD90610EFJ-C
HTSOP-J8
2500
2500
Taping
inquiry
Yes