BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. Features • • • • High Voltage Fast Switching Speed Low Saturation Voltage These Devices are Pb−Free and are RoHS Compliant* www.onsemi.com NPN SILICON POWER TRANSISTORS 7 AMPERES − 60 WATTS 150 AND 200 VOLTS MAXIMUM RATINGS Symbol Value Unit Collector−Emitter Voltage Rating BU406 BU407 VCEO 200 150 Vdc Collector−Emitter Voltage BU406 BU407 VCEV 400 330 Vdc Collector−Base Voltage BU406 BU407 VCBO 400 330 Vdc VEBO 6 Vdc IC 7 10 Adc ICM 15 Adc Base Current IB 4 Adc Total Device Dissipation @ TC = 25_C Derate above 25°C PD 60 0.48 W W/_C TJ, Tstg −65 to 150 _C Emitter−Base Voltage Collector Current − Continuous − Peak Repetitive Collector Current − Peak (10 ms) Operating and Storage Junction Temperature Storage SCHEMATIC COLLECTOR 2,4 1 BASE 3 EMITTER MARKING DIAGRAM 4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 THERMAL CHARACTERISTICS Characteristics TO−220 CASE 221A STYLE 1 Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 2.08 _C/W Thermal Resistance, Junction−to−Ambient RqJA 70 _C/W Maximum Lead Temperature for Soldering Purposes1/8″ from Case for 5 Seconds TL 260 _C 2 BU40xG AY WW 1 3 BU40x = Specific Device Code x = 6 or 7 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping BU406G TO−220AB (Pb−Free) 50 Units / Rail BU407G TO−220AB (Pb−Free) 50 Units / Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 11 1 Publication Order Number: BU406/D BU406, BU407 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 200 150 − − − − Vdc − − − − − − 5 0.1 1 IEBO − − 1 mAdc Collector−Emitter Saturation Voltage (IC = 5 Adc, IB = 0.5 Adc) VCE(sat) − − 1 Vdc Base−Emitter Saturation Voltage (IC = 5 Adc, IB = 0.5 Adc) VBE(sat) − − 1.2 Vdc VEC − − 2 Volts fT 10 − − MHz Cob − 80 − pF tc − − 0.75 ms OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 100 mAdc, IB = 0) BU406 BU407 Collector Cutoff Current (VCE = Rated VCEV, VBE = 0) (VCE = Rated VCEO + 50 Vdc, VBE = 0) (VCE = Rated VCEO + 50 Vdc, VBE = 0, TC = 150_C) Emitter Cutoff Current (VEB = 6 Vdc, IC = 0) ICES BU406, BU407 mAdc ON CHARACTERISTICS (Note 1) Forward Diode Voltage (IEC = 5 Adc) “D” only DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, ftest = 20 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) SWITCHING CHARACTERISTICS Inductive Load Crossover Time (VCC = 40 Vdc, IC = 5 Adc, IB1 = IB2 = 0.5 Adc, L = 150 mH) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 1%. 100 50 30 TJ = 100°C IC, COLLECTOR CURRENT (AMP) hFE, DC CURRENT GAIN 70 10 25°C VCE = 5 V 20 10 0.1 2 3 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (AMPS) 5 7 10 dc BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1 0.1 TC = 25°C 2 Figure 1. DC Current Gain 3 BU407 BU406 20 30 5 7 10 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Maximum Rated Forward Bias Safe Operating Area www.onsemi.com 2 200 BU406, BU407 PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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