PHILIPS BYW29 Rectifier diodes ultrafast Datasheet

Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYW29 series
GENERAL DESCRIPTION
Glass passivated high efficiency
rectifier diodes in a plastic envelope,
featuring low forward voltage drop,
ultra-fast recovery times and soft
recovery characteristic. They are
intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and switching losses are
essential.
PINNING - TO220AC
PIN
SYMBOL
cathode (k)
2
anode (a)
PARAMETER
BYW29Repetitive peak reverse
voltage
Forward voltage
Forward current
Reverse recovery time
VRRM
VF
IF(AV)
trr
PIN CONFIGURATION
DESCRIPTION
1
tab
QUICK REFERENCE DATA
MAX.
MAX.
MAX.
UNIT
100
100
150
150
200
200
V
0.895
8
25
0.895
8
25
0.895
8
25
V
A
ns
SYMBOL
tab
a
k
cathode (k)
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VRRM
VRWM
VR
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
IF(AV)
Average forward current1
IF(RMS)
IFRM
IFSM
I2t
Tstg
Tj
CONDITIONS
MIN.
-
square wave; δ = 0.5;
Tmb ≤ 128 ˚C
sinusoidal; a = 1.57;
Tmb ≤ 130 ˚C
RMS forward current
Repetitive peak forward current t = 25 µs; δ = 0.5;
Tmb ≤ 128 ˚C
Non-repetitive peak forward
t = 10 ms
current
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
I2t for fusing
t = 10 ms
Storage temperature
Operating junction temperature
MAX.
-100
100
100
100
-150
150
150
150
UNIT
-200
200
200
200
V
V
V
-
8
A
-
7.3
A
-
11.3
16
A
A
-
80
88
A
A
-40
-
32
150
150
A2s
˚C
˚C
1 Neglecting switching and reverse current losses
October 1994
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYW29 series
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
Rth j-a
CONDITIONS
in free air
MIN.
TYP.
MAX.
UNIT
-
-
2.7
K/W
-
60
-
K/W
MIN.
TYP.
MAX.
UNIT
-
0.80
0.92
1.1
0.3
2
0.895
1.05
1.3
0.6
10
V
V
V
mA
µA
MIN.
TYP.
MAX.
UNIT
-
4
20
11
25
nC
ns
-
1
2
A
-
1
-
V
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
VF
Forward voltage
IR
Reverse current
IF = 8 A; Tj = 150˚C
IF = 8 A
IF = 20 A
VR = VRWM; Tj = 100 ˚C
VR = VRWM
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
Qs
trr
Reverse recovery charge
Reverse recovery time
Irrm
Peak reverse recovery current
Vfr
Forward recovery voltage
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 100 A/µs
IF = 10 A; VR ≥ 30 V; Tj = 100 ˚C;
-dIF/dt = 50 A/µs
IF = 1 A; dIF/dt = 10 A/µs
October 1994
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYW29 series
I
dI
F
8
F
dt
I
R
100%
10%
s
rrm
136.5
4
139.2
3
141.9
2
144.6
1
147.3
0
0
1
2
3
4
IF(AV) / A
5
6
7
150
8
Fig.4. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
Fig.1. Definition of trr, Qs and Irrm
I
133.8
2.8
4
128.4
131.1
1.9
2.2
5
time
Q
a = 1.57
Rs = 0.013 Ohms
6
rr
Tmb(max) / C
BYW29
Vo = 0.791 V
7
t
I
PF / W
trr / ns
F
1000
IF=10A
100
time
IF=1A
V
F
10
V
V
fr
F
1
time
1
10
dIF/dt (A/us)
Fig.2. Definition of Vfr
12
BYW29
PF / W
100
Fig.5. Maximum trr at Tj = 25 ˚C.
Tmb(max) / C
Vo = 0.791 V
trr / ns
120.3
1000
D = 1.0
Rs = 0.013 Ohms
123
10
0.5
8
128.4
IF=1A
0.2
6
IF=10A
100
133.8
0.1
4
tp
I
D=
tp
T
10
144.6
2
t
T
0
139.2
0
2
4
6
IF(AV) / A
8
10
150
12
1
Fig.3. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
October 1994
1
10
dIF/dt (A/us)
100
Fig.6. Maximum trr at Tj = 100 ˚C.
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYW29 series
100 Qs / nC
Irrm / A
10
IF=10A
5A
2A
1A
IF=10A
1
IF=1A
10
0.1
1.0
1.0
0.01
10
-dIF/dt (A/us)
1
100
Fig.7. Maximum Irrm at Tj = 25 ˚C.
100
Fig.10. Maximum Qs at Tj = 25 ˚C.
Irrm / A
10
10
-dIF/dt (A/us)
Zth (K/W)
10
IF=10A
1
1
IF=1A
0.1
0.1
PD
tp
t
0.01
1
10
-dIF/dt (A/us)
0.01
10 us
100
0.1 s
10 s
tp / s
Fig.8. Maximum Irrm at Tj = 100 ˚C.
30
1 ms
Fig.11. Transient thermal impedance; Zth j-mb = f(tp).
BYW29
IF / A
Tj=150 C
Tj=25 C
20
typ
max
10
0
0
0.5
1
VF / V
1.5
2
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
October 1994
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYW29 series
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1
(2x)
2
0,9 max (2x)
5,08
0,6
2,4
Fig.12. TO220AC; pin 1 connected to mounting base.
Notes
1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1994
5
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYW29 series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1994
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1994
6
Rev 1.100
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