Philips Semiconductors Product specification Rectifier diodes ultrafast BYW29 series GENERAL DESCRIPTION Glass passivated high efficiency rectifier diodes in a plastic envelope, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential. PINNING - TO220AC PIN SYMBOL cathode (k) 2 anode (a) PARAMETER BYW29Repetitive peak reverse voltage Forward voltage Forward current Reverse recovery time VRRM VF IF(AV) trr PIN CONFIGURATION DESCRIPTION 1 tab QUICK REFERENCE DATA MAX. MAX. MAX. UNIT 100 100 150 150 200 200 V 0.895 8 25 0.895 8 25 0.895 8 25 V A ns SYMBOL tab a k cathode (k) 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VRWM VR Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage IF(AV) Average forward current1 IF(RMS) IFRM IFSM I2t Tstg Tj CONDITIONS MIN. - square wave; δ = 0.5; Tmb ≤ 128 ˚C sinusoidal; a = 1.57; Tmb ≤ 130 ˚C RMS forward current Repetitive peak forward current t = 25 µs; δ = 0.5; Tmb ≤ 128 ˚C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinusoidal; with reapplied VRWM(max) I2t for fusing t = 10 ms Storage temperature Operating junction temperature MAX. -100 100 100 100 -150 150 150 150 UNIT -200 200 200 200 V V V - 8 A - 7.3 A - 11.3 16 A A - 80 88 A A -40 - 32 150 150 A2s ˚C ˚C 1 Neglecting switching and reverse current losses October 1994 1 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast BYW29 series THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient Rth j-a CONDITIONS in free air MIN. TYP. MAX. UNIT - - 2.7 K/W - 60 - K/W MIN. TYP. MAX. UNIT - 0.80 0.92 1.1 0.3 2 0.895 1.05 1.3 0.6 10 V V V mA µA MIN. TYP. MAX. UNIT - 4 20 11 25 nC ns - 1 2 A - 1 - V STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current IF = 8 A; Tj = 150˚C IF = 8 A IF = 20 A VR = VRWM; Tj = 100 ˚C VR = VRWM DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS Qs trr Reverse recovery charge Reverse recovery time Irrm Peak reverse recovery current Vfr Forward recovery voltage IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs IF = 10 A; VR ≥ 30 V; Tj = 100 ˚C; -dIF/dt = 50 A/µs IF = 1 A; dIF/dt = 10 A/µs October 1994 2 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast BYW29 series I dI F 8 F dt I R 100% 10% s rrm 136.5 4 139.2 3 141.9 2 144.6 1 147.3 0 0 1 2 3 4 IF(AV) / A 5 6 7 150 8 Fig.4. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Fig.1. Definition of trr, Qs and Irrm I 133.8 2.8 4 128.4 131.1 1.9 2.2 5 time Q a = 1.57 Rs = 0.013 Ohms 6 rr Tmb(max) / C BYW29 Vo = 0.791 V 7 t I PF / W trr / ns F 1000 IF=10A 100 time IF=1A V F 10 V V fr F 1 time 1 10 dIF/dt (A/us) Fig.2. Definition of Vfr 12 BYW29 PF / W 100 Fig.5. Maximum trr at Tj = 25 ˚C. Tmb(max) / C Vo = 0.791 V trr / ns 120.3 1000 D = 1.0 Rs = 0.013 Ohms 123 10 0.5 8 128.4 IF=1A 0.2 6 IF=10A 100 133.8 0.1 4 tp I D= tp T 10 144.6 2 t T 0 139.2 0 2 4 6 IF(AV) / A 8 10 150 12 1 Fig.3. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x √D. October 1994 1 10 dIF/dt (A/us) 100 Fig.6. Maximum trr at Tj = 100 ˚C. 3 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast BYW29 series 100 Qs / nC Irrm / A 10 IF=10A 5A 2A 1A IF=10A 1 IF=1A 10 0.1 1.0 1.0 0.01 10 -dIF/dt (A/us) 1 100 Fig.7. Maximum Irrm at Tj = 25 ˚C. 100 Fig.10. Maximum Qs at Tj = 25 ˚C. Irrm / A 10 10 -dIF/dt (A/us) Zth (K/W) 10 IF=10A 1 1 IF=1A 0.1 0.1 PD tp t 0.01 1 10 -dIF/dt (A/us) 0.01 10 us 100 0.1 s 10 s tp / s Fig.8. Maximum Irrm at Tj = 100 ˚C. 30 1 ms Fig.11. Transient thermal impedance; Zth j-mb = f(tp). BYW29 IF / A Tj=150 C Tj=25 C 20 typ max 10 0 0 0.5 1 VF / V 1.5 2 Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj October 1994 4 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast BYW29 series MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 (2x) 2 0,9 max (2x) 5,08 0,6 2,4 Fig.12. TO220AC; pin 1 connected to mounting base. Notes 1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1994 5 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast BYW29 series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1994 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1994 6 Rev 1.100