ADPOW APL501J N-channel enhancement mode high voltage power mosfet Datasheet

S
S
D
G
27
2
T-
D
G
SO
APL501J
S
ISOTOP®
43.0A 0.12W
500V
"UL Recognized" File No. E145592 (S)
POWER MOS IV
®
SINGLE DIE ISOTOP® PACKAGE
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
APL501J
UNIT
Drain-Source Voltage
500
Volts
Continuous Drain Current @ TC = 25°C
43
Parameter
1
Amps
IDM, lLM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
Volts
Total Power Dissipation @ TC = 25°C
520
Watts
Linear Derating Factor
4.16
W/°C
PD
TJ,TSTG
TL
172
and Inductive Current Clamped
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions / Part Number
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
500
Volts
ID(ON)
On State Drain Current
43
Amps
Symbol
RDS(ON)
IDSS
IGSS
VGS(TH)
2
(VDS > I D(ON) x R DS(ON) Max, VGS = 8V)
Drain-Source On-State Resistance
2
TYP
0.12
(VGS = 10V, 0.5 ID [Cont.])
UNIT
Ohms
25
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
µA
250
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage
MAX
2
(VDS = VGS, ID = 2.5mA)
±100
nA
4
Volts
MAX
UNIT
THERMAL CHARACTERISTICS
Characteristic
MIN
RQJC
Junction to Case
RQCS
Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
TYP
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
Rev C
°C/W
0.06
9-2001
0.24
050-5903
Symbol
APL501J
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
MIN
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
6040
7300
Coss
Output Capacitance
VDS = 25V
1220
1710
Reverse Transfer Capacitance
f = 1 MHz
510
770
Turn-on Delay Time
VGS = 15V
13
26
Crss
td(on)
tr
Rise Time
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 0.5 VDSS
20
40
ID = ID [Cont.] @ 25°C
54
81
RG = 0.6W
11
20
TYP
MAX
UNIT
pF
ns
SAFE OPERATING AREA CHARACTERISTICS
Symbol
SOA1
Test Conditions / Part Number
MIN
VDS = 400 V, IDS = 0.813A, t = 20 sec., TC = 60°C
325
Characteristic
Safe Operating Area
Watts
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
D=0.5
0.1
0.2
0.1
0.05
0.01
0.005
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
q
0.3
0.05
0.02
0.001
10-5
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
80
80
050-5903
Rev C
8V
60
7V
40
6V
20
5V
0
20
40
60
80
100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
9-2001
VGS=9V, 10V, 12V, 14 & 16V
0
t1
0.01
SINGLE PULSE
VGS=10, 12, 14 & 16V
9V
8V
60
7V
40
6V
20
5V
0
UNIT
0
4
8
12
16
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
TJ = +25°C
30
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
20
TJ = +125°C
10
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
40
30
20
10
GS
VGS=10V
1.10
1.00
0.90
0.80
D
= 0.5 I
D
0
20
40
60
80
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
V
GS
[Cont.]
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25 0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
175
30,000
OPERATION HERE
LIMITED BY RDS (ON)
100µS
50
10,000
1mS
10
5
10mS
100mS
1
DC
TC =+25°C
TJ =+150°C
SINGLE PULSE
.1
1
5 10
50 100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
VGS=20V
1.2
I
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
2.5
.5
D
1.20
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
100
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
5,000
Ciss
1,000
Coss
500
Crss
100
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
9-2001
0
1.15
V
Rev C
ID, DRAIN CURRENT (AMPERES)
50
1.30
050-5903
ID, DRAIN CURRENT (AMPERES)
TJ = -55°C
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
40
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
APL501J
APL501J
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
1.95 (.077)
2.14 (.084)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
* Source
Drain
050-5903
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Rev C
9-2001
30.1 (1.185)
30.3 (1.193)
Gate
Dimensions in Millimeters and (Inches)
"UL Recognized" File No. E145592
ISOTOP® is a Registered Trademark of SGS Thomson.
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
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