S S D G 27 2 T- D G SO APL501J S ISOTOP® 43.0A 0.12W 500V "UL Recognized" File No. E145592 (S) POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. APL501J UNIT Drain-Source Voltage 500 Volts Continuous Drain Current @ TC = 25°C 43 Parameter 1 Amps IDM, lLM Pulsed Drain Current VGS Gate-Source Voltage ±30 Volts Total Power Dissipation @ TC = 25°C 520 Watts Linear Derating Factor 4.16 W/°C PD TJ,TSTG TL 172 and Inductive Current Clamped -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions / Part Number MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 500 Volts ID(ON) On State Drain Current 43 Amps Symbol RDS(ON) IDSS IGSS VGS(TH) 2 (VDS > I D(ON) x R DS(ON) Max, VGS = 8V) Drain-Source On-State Resistance 2 TYP 0.12 (VGS = 10V, 0.5 ID [Cont.]) UNIT Ohms 25 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) µA 250 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage MAX 2 (VDS = VGS, ID = 2.5mA) ±100 nA 4 Volts MAX UNIT THERMAL CHARACTERISTICS Characteristic MIN RQJC Junction to Case RQCS Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.) TYP CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 Rev C °C/W 0.06 9-2001 0.24 050-5903 Symbol APL501J DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance VGS = 0V 6040 7300 Coss Output Capacitance VDS = 25V 1220 1710 Reverse Transfer Capacitance f = 1 MHz 510 770 Turn-on Delay Time VGS = 15V 13 26 Crss td(on) tr Rise Time td(off) tf Turn-off Delay Time Fall Time VDD = 0.5 VDSS 20 40 ID = ID [Cont.] @ 25°C 54 81 RG = 0.6W 11 20 TYP MAX UNIT pF ns SAFE OPERATING AREA CHARACTERISTICS Symbol SOA1 Test Conditions / Part Number MIN VDS = 400 V, IDS = 0.813A, t = 20 sec., TC = 60°C 325 Characteristic Safe Operating Area Watts 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 D=0.5 0.1 0.2 0.1 0.05 0.01 0.005 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) q 0.3 0.05 0.02 0.001 10-5 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 80 80 050-5903 Rev C 8V 60 7V 40 6V 20 5V 0 20 40 60 80 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 9-2001 VGS=9V, 10V, 12V, 14 & 16V 0 t1 0.01 SINGLE PULSE VGS=10, 12, 14 & 16V 9V 8V 60 7V 40 6V 20 5V 0 UNIT 0 4 8 12 16 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS TJ = +25°C 30 TJ = +125°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 20 TJ = +125°C 10 TJ = +25°C TJ = -55°C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 40 30 20 10 GS VGS=10V 1.10 1.00 0.90 0.80 D = 0.5 I D 0 20 40 60 80 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE V GS [Cont.] = 10V 2.0 1.5 1.0 0.5 0.0 -50 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 175 30,000 OPERATION HERE LIMITED BY RDS (ON) 100µS 50 10,000 1mS 10 5 10mS 100mS 1 DC TC =+25°C TJ =+150°C SINGLE PULSE .1 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) VGS=20V 1.2 I VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 2.5 .5 D 1.20 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 100 NORMALIZED TO = 10V @ 0.5 I [Cont.] 5,000 Ciss 1,000 Coss 500 Crss 100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 9-2001 0 1.15 V Rev C ID, DRAIN CURRENT (AMPERES) 50 1.30 050-5903 ID, DRAIN CURRENT (AMPERES) TJ = -55°C RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 40 BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) APL501J APL501J SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 1.95 (.077) 2.14 (.084) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) * Source Drain 050-5903 * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Rev C 9-2001 30.1 (1.185) 30.3 (1.193) Gate Dimensions in Millimeters and (Inches) "UL Recognized" File No. E145592 ISOTOP® is a Registered Trademark of SGS Thomson. APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058