AP20GT60SW Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ.=1.8V@IC=20A ▼ Built-in Fast Recovery Diode VCES 600V IC 20A C G C ▼ RoHS Compliant & Halogen-Free TO-3P E G E Absolute Maximum Ratings Rating Units VCES Symbol Collector-Emitter Voltage 600 V VGE Gate-Emitter Voltage +20 V IC@TC=25℃ Collector Current 40 A IC@TC=100℃ Collector Current 20 A Parameter ICM Pulsed Collector Current 1 160 A IDM Collector to Emitter Diode Forward Current 1 40 A PD@TC=25℃ Maximum Power Dissipation 125 W TSTG Storage Temperature Range -55 to 150 o TJ Operating Junction Temperature Range 150 o TL Maximum Lead Temp. for Soldering Purposes 300 o C C C , 1/8" from case for 5 seconds . Notes: 1. Pulse width limited by max. junction temperature . . Thermal Data Parameter Symbol Rthj-c o C/W 1 Rthj-c(Diode) Thermal Resistance Junction-Case Rthj-a Units Value Thermal Resistance Junction-Case o C/W 1.5 Thermal Resistance Junction-Ambient o C/W 40 Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol IGES Parameter Gate-to-Emitter Leakage Current Test Conditions VGE=+20V, VCE=0V Min. - Typ. - Max. +100 Units nA ICES Collector-Emitter Leakage Current VCE=600V, VGE=0V - - 1 mA VCE(sat) Collector-Emitter Saturation Voltage VGE=15V, IC=20A - 1.8 2.3 V VGE(th) Gate Threshold Voltage VCE=VGE, IC=250uA 2 - 6 V Qg Total Gate Charge IC=20A - 100 160 nC Qge Gate-Emitter Charge VCE=480V - 24 - nC Qgc Gate-Collector Charge - 40 - nC td(on) Turn-on Delay Time - 50 - ns tr Rise Time - 20 - ns td(off) Turn-off Delay Time - 135 - ns tf Fall Time VGE=15V VCE=480V, Ic=20A, VGE=15V, RG=5Ω, Inductive Load - 190 380 ns Eon Turn-On Switching Loss - 0.3 - mJ Eoff Turn-Off Switching Loss - 0.9 - mJ Cies Input Capacitance VGE=0V - 3400 5440 pF Coes Output Capacitance VCE=30V - 75 - pF Cres Reverse Transfer Capacitance f=1.0MHz - 50 - pF VF FRD Forward Voltage IF=20A - 1.65 2 V trr FRD Reverse Recovery Time IF=10A - 50 - ns Qrr FRD Reverse Recovery Charge di/dt = 100 A/μs - 80 - nC Data and specifications subject to change without notice 1 201502243 AP20GT60SW 200 16 IC , Collector Current (A) T C =25 o C 160 VGE , Gate -Emitter Voltage (V) 20V 18V 15V 12V V GE =10V 120 80 40 I C =20A V CC =480V 12 8 4 0 0 0 2 4 6 8 10 0 12 20 40 V CE , Collector-Emitter Voltage (V) 60 80 100 120 Q G , Gate Charge (nC) Fig 1. Typical Output Characteristics Fig 2. Gate Charge Characterisitics 120 4 V GE = 15 V V GE =15V T C =25 ℃ T C =150 ℃ 80 60 . 40 20 VCE(sat) ,Saturation Voltage(V) IC , Collector Current(A) 100 0 3 I C = 40 A I C =20A 2 1 0 0 1 2 3 4 5 6 0 40 80 120 160 Junction Temperature ( o C) V CE , Collector-Emitter Voltage (V) Fig 3. Typical Saturation Voltage Characteristics Fig 4. Typical Collector- Emitter Voltage v.s. Junction Temperature f=1.0MHz 1.6 5000 I C =10mA 4000 C ies Capacitance (pF) Normalized VGE(th) 1.2 0.8 3000 2000 - 0.4 1000 0 C oes C res 0 -50 0 50 100 150 Junction Temperature ( o C ) Fig 5. Gate Threshold Voltage 1 5 9 13 17 21 25 29 V CE , Collector-Emitter Voltage (V) Fig 6. Typical Capacitance Characterisitics v.s. Junction Temperature 2 AP20GT60SW 1 Normalized Thermal Response (Rthjc) 160 Power Dissipation (W) 120 80 40 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 Single Pulse 0.01 0 0 50 100 150 0.00001 200 0.0001 0.001 o Junction Temperature ( C ) 0.1 1 10 t , Pulse Width (s) Fig7. Power Dissipation vs. Junction Temperature Fig 8. Effective Transient Thermal Impedance 20 20 T C =25 o C T C = 150 o C 15 10 . 5 I C = 60 A 40 A 20 A VCE , Collector-Emitter Voltage(V) VCE , Collector-Emitter Voltage(V) 0.01 0 15 10 5 I C = 60 A 40 A 20 A 0 0 4 8 12 16 20 0 4 8 12 16 20 V GE , Gate-Emitter Voltage(V) V GE , Gate-Emitter Voltage(V) Fig 9. Saturation Voltage vs. VGE Fig 10. Saturation Voltage vs. VGE 20 IC, Peak Collector Current(A) V GE =15V IF , Forward Current (A) 16 T j =25 o C o T j =150 C 12 8 4 T C =125 o C 100 Safe Operating Area 0 1 0 0.4 0.8 1.2 1.6 2 V F , Forward Voltage (V) Fig 11. Forward Characteristic of 2.4 0.1 1 10 100 1000 10000 V CE ,Collector-Emitter Voltage(V) Fig 12. Turn-off SOA Diode 3 AP20GT60SW-HF MARKING INFORMATION Part Number Package Code : W 20GT60SW YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence . 4