AME, Inc. AME5130 n General Description The AME5130 is a fixed off-time step-up DC/DC converter in a small 5-lead SOT-25 package.The AME5130 Micropower Step-Up DC/DC Converter n Typical Application L 10µH V IN 2.5V-4.2V is ideal for LCD panels requiring low current and high effi- Option for 6LEDs D 5 1 ciency as well as LED applications for cellular phone backlighting, PDAS,and other hand-held devices. The low 400ns off-time allows the use of tiny external compo- V IN CIN 4.7µF Ceramic ILED SW COUT 4.7µF Ceramic nents. AME5130 AME5130 can drive up 8 white LEDs from a single Li- >1.1V 4 Ion battery DC 2V to 5.5V; can be turned on by putting RUN 0V more than 1V at pin 4(RUN). To control LED brightness, 3 FB GND R2 80Ω 2 the LED current can be pulsed by applying a PWM (pulse width modulated) signal with a frequency range of 100Hz to 50KHz to the RUN pin. * ILED =VFB/R2 n Features Figure 1： Six White LEDs Application in Li-lon Battery l 0.7Ω internal switch l Uses small surface mount components l Adjustable output voltage up to 20V l 2V to 5.5V input range V IN 2.5V-4.2V L 15µH 20V 20mA D l Input undervoltage lockout l 0.01µA shutdown current l Small 5-Lead SOT-25 package 5 1 VIN CIN 4.7µF Ceramic 4 R1 510K SW AME5130 FB 3 RUN GND 2 COUT 4.7µF Ceramic R2 33K n Applications l White LED Back-Lighting l Hand-held Devices l Digital Cameras l Portable Applications l LCD Bias Power Figure 2： Typical 20V Application 1 AME, Inc. AME5130 Micropower Step-Up DC/DC Converter n Function Block Diagram L D VIN CIN VIN COUT SW V OUT Vref=1.23 R1 FB + Enable Comp - + CL Comp - R2 400ns one Shot Current sensing Internal Soft Start Driver Under Voltage Lockout Logic control RUN Figure 3： AME5130 Block Diagram 2 VOUT GND AME, Inc. AME5130 Micropower Step-Up DC/DC Converter n Pin Configuration SOT-25 Top View 5 4 AME5130 1. SW 2. GND AME5130 3. FB 4. RUN 1 2 3 5. VIN * Epoxy: Conductive n Pin Description Pin # Pin Name Pin Description 1 SW Power Switch input. This is the drain of the internal NMOS power switch. Minimize the metal trace area connected to this pin to minimize EMI. 2 GND Ground. Tie directly to ground plane. Output voltage feedback input. Set the output voltage by selecting values for R1 and R2 using: 3 FB V R1 = R 2 out − 1 1 . 23V Connect the ground of the feedback network to an AGND(Analog Ground) plane which should be tied directly to the GND pin. 4 RUN Shutdown control input, active low. The shutdown pin is an active low control. Tie this pin above 1V to enable the device. Tie this pin below 0.4V to turn off the device. 5 VIN Analog and Power input. Input Supply Pin. Bypass this pin with a capacitor as close to the device as possible. 3 AME, Inc. AME5130 Micropower Step-Up DC/DC Converter n Ordering Information AME5130 x x x x x x Special Feature Output Voltage Number of Pins Package Type Operating Temperature Range Pin Configuration Pin Configuration A Operating Package Type Temperature Range Number of Pins Output Voltage Special Feature E: -40OC to 85OC V: 5 ADJ: Adjustable Z: 1. SW 2. GND 3. FB 4. RUN 5. VIN E: SOT-2X Lead free n Ordering Information Part Number Marking* Output Voltage Package Operating Temp. Range AME5130AEEVADJ BCLww ADJ SOT-25 -40OC to +85OC AME5130AEEVADJZ BCLww ADJ SOT-25 -40OC to +85OC Note: ww represents the date code and pls refer to Date Code Rule before Package Dimension. * A line on top of the first letter represents lead free plating such as BCL. Please consult AME sales office or authorized Rep./Distributor for the availability of package type. 4 AME, Inc. AME5130 Micropower Step-Up DC/DC Converter n Absolute Maximum Ratings Parameter Symbol Maximum Unit VIN 6 V VRUN ,VFB VIN V SW Voltage VSW VOUT+0.3 V N-Channel Switch Sink Current ISW 800 mA Input Supply Voltage RUN, VFB Voltages ESD Classification B Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device n Recommended Operating Conditions Parameter Rating Unit Ambient Temperature Range -40 to +85 o Junction Temperature -40 to +125 o C C n Thermal Information Parameter Package Die Attached Symbol Thermal Resistance* (Junction to Case) θJC Maximum Unit 81 o C/W Thermal Resistance (Junction to Ambient) SOT-25 Conductive Internal Power Dissipation (∆T = 100oC) θJA 260 PD 400 mW Maximum Junction Temperature 150 o Lead Temperature (Soldering 10sec) 300 o C C * The case point of θJC is on the center of Molding Compound. 5 AME, Inc. AME5130 Micropower Step-Up DC/DC Converter n Electrical Specifications VIN=2.2V, RUN = VIN, TA = 25oC Unless otherwise noted. Parameter Symbol Device Disabled Device Enabled IQ Shutdown Test Condition Typ Max FB = 1.3V 64 80 FB = 1.15V 69 90 RUN = 0V 0.01 2 1.199 1.23 1.261 V 490 550 610 mA 0.2 0.7 µA 5.5 V 1.6 Ω Feedback Trip Point VFB Switch Current Limit ICL IOUT=20mA, VOUT=20V FB Pin Bias Current ΙΒ FB = 1.23V Input Voltage Range VIN Switch RDSON Switch Off Time Min 2 RDSON 0.7 TOFF o RUN = VIN , TJ = 25 C RUN Pin Current ISD o RUN = VIN , TJ = 125 C RUN = GND Switch Leakage Current Input Undervoltage Lockout Feedback Hysteresis RUN LOW (Shutdown) RUN High (Enable the device) 6 IL UVP Units µA 400 ns 0 nA 15 nA 0 nA 0.05 ON/OFF Threshold 1.6 V 8 mV VFB Hysteresis 5.0 µΑ VSW = 20V 0.4 V RUN Threshold 1 V AME, Inc. AME5130 n Electrical Specifications The AME5130 features a constant off-time control scheme. Operation can be best understood by referring to Figure 3. When the voltage at the FB pin is less than 0.9V, the Enable Comp in Figure 3 enables the device and the NMOS switch is turmed on pulling the SW pin to ground. When the NMOS switch is on, current is supplied by the output capacitor C OUT. Once the current in the inductor reaches the peak current limit, the 400ns One Shot turns off the NMOS switch. The SW voltage will then rise to the output voltage plus a diode drop and the inductor current will begin to decrease as shown in Figure 3. During this time the energy stored in the inductor is transferred to C OUT and the load. After the 400ns off-time the NMOS switch is turned on and energy is stored in the inductor again. This energy transfer from the inductor to the output causes a stepping effect in the output ripple. This cycle is continued until the voltage at FB reaches 1.23V. When FB reaches this voltage, the enable comparator then disables the device turning off the NMOS switch and reducing the Iq of the device to 64 µA. The load current is then supplied solely by C OUT indicated by the gradually decreasing slope at the output. When the FB pin drops slightly below 1.23V, the enable comparator enables the device and begins the cycle described previously. The RUN pin can be used to turn off the AME5130 and reduce the Iq to 0.01µA. In shutdown mode the output voltage will be a diode drop lower than the input voltage. Micropower Step-Up DC/DC Converter n Application Information INDUCTOR SELECTION The appropriate inductor for a given application is calculated using the following equation: V − VIN(min) + VD TOFF L = OUT ICL Where VD is the schottky diode voltage, I CL is the switch current limit found in the Typical Performance Characteristics section, and T OFF is the switch off time. When using this equation be sure to use in minimum input voltage for the application, such as for battery powered applications. Choosing inductors with low ESR decrease power lossed and increase efficiency. Care should be taken when choosing an inductor. For applications that require an input voltage that approaches the output voltage, such as when converting a Li-ion battery voltage to 5V, the 400ns off time may not be enough time to discharge the energy in the inductor and transfer the energy to the output capacitor and load. This can cause a ramping effect in the inductor current waveform and an increased ripple on the output voltage. Using a smaller inductor will cause the I PK to increase and will increase the output voltage ripple further. This can be solved by adding a 4.7pF capacitor across the R1 feedback resistor (Figure 3) and slightly increasing the output capacitor. A smaller inductor can then be used to ensure proper discharge in the 400ns off time. DIODE SELECTION To maintain high efficiency, the average current rating of the schottky diode should be larger than the peak inductor current, I PK. Schottky diodes with a low forward drop and fast switching speeds are ideal for increasing efficiency in portable applications. Choose a reverse breakdown of the schottky diode larger than the output voltage. 7 AME, Inc. AME5130 CAPACITOR SELECTION Choose low ESR capacitors for the output to minimize output voltage ripple. Multilayer ceramic capacitors are the best choice. For most applications, a 1µF ceramic capacitor is sufficient. For some applications a reduction in output voltage ripple can be achieved by increasing the output capacitor. Local bypassing for the input is needed on the AME5130. Multilayer ceramic capacitors are a good choice for this as well. A 4.7µF capacitor is sufficient for most applications. For additional bypassing, a 100nF ceramic capacitor can be used to shunt high frequency ripple on the input. LAYOUT CONSIDERATIONS The input bypass capacitor C IN, as shown in Figure 3, must be placed close to the IC. This will reduce copper trace resistance which effects input voltage ripple of the IC. For additional input voltage filtering, a 100nF bypass capacitor can be placed in parallel with C IN to shunt any high frequency noise to ground. The output capacitor, C OUT, should also be placed close to the IC. Any copper trace connections for the C OUT capacitor can increase the series resistance, which directly effects output voltage ripple. The feedback network, resistors R1 and R2, should be kept close to the FB pin to minimize copper trace connections that can inject noise into the system. The ground connection for the feedback resistor network should connect directly to an analog ground plane. The analog ground plane should tie directly to the GND pin. If no analog ground plane is available, the ground connection for the feedback network should tie directly to the GND pin. Trace connections made to the inductor and schottky diode should be minimized to reduce power dissipation and increase overall efficiency. 8 Micropower Step-Up DC/DC Converter AME, Inc. AME5130 Micropower Step-Up DC/DC Converter n Application Information L 10µH VIN 2.5V-4.2V 5 1 VIN CIN 4.7µF Ceramic Option for 8LEDs D SW COUT 1µF Ceramic COUT 1µF Ceramic AME5130 >1.1V 4 RUN 0V FB 3 GND R3 80Ω R2 80Ω 2 Figure4: Eight White LEDs Application in Li-Ion Battery L 2.2µH VIN 2.5V-4.2V 5 1 VIN C IN 4.7µF Ceramic 4 R1 1M SW AME5130 FB RUN GND 5V 120mA D 3 CF B 4.7pF C OUT 4.7µF Ceramic R2 330k 2 Figure5: Li-Ion 5V Application 9 AME, Inc. AME5130 Micropower Step-Up DC/DC Converter n Application Information L 10µH VIN 2.5V-4.5V 5 1 VIN C IN 4.7µF Ceramic R1 240K SW AME5130 FB 4 12V 40mA D C OUT 4.7µF Ceramic 3 RUN R2 27K GND 2 Figure6: Li-Ion 12V Application L 10µH VIN 5V 5 1 VIN C IN 4.7µF Ceramic 4 12V 145mA D R1 240K SW AME5130 FB RUN GND 3 R2 27K 2 Figure7: 5V to 12V Application 10 C OUT 4.7µF Ceramic AME, Inc. AME5130 Micropower Step-Up DC/DC Converter Switch Current Limit vs. VIN Efficiency vs. Load Current 800 90 V IN =4.2V 85 700 V IN =3.3V 80 650 E FFICIENCY (% ) Switch Cur rent Lim it (mA) 750 O TA=25 C 600 550 500 VIN=2.5V 75 70 65 60 450 VOUT=20V 55 400 50 350 2 2.5 3 3.5 4 4.5 5 5.5 0.5 6 5 10 15 20 VIN(V) VIN=5V 40 45 85 VIN=3.3V EFFICIENCY (% ) V IN=2.5V 75 V IN=4.2V 90 V IN=4.2V 80 EFFICIENCY (% ) 35 95 85 70 65 60 55 50 VIN=3.3V 80 75 VIN=2.5V 70 65 60 55 50 VOUT =12V 45 40 0.5 VOUT=5V 45 40 4 8 20 40 55 70 80 110 115 140 145 0.5 3 6 9 IOUT (mA) 20 35 50 80 110 140 160 190 220 250 IOUT (mA) Enable Current vs. VIN (Part Switching) Disable Current vs. VIN (Part Not Switching) 140 140 130 130 oC Disable Cur rent (uA) TA=25 120 Enable Cirrent (uA) 30 Efficiency vs. Load Current Efficiency vs. Load Current 90 110 100 90 80 TA=85 oC TA=-40 oC 70 60 TA=25o C 120 110 100 TA=85 oC 90 80 TA=-40 oC 70 60 50 50 40 25 IOUT (mA) 40 2 2 2.5 3 3.5 4 VIN (V) 4.5 5 5.5 6 2.5 3 3.5 4 4.5 5 5.5 6 V IN (V) 11 AME, Inc. AME5130 Micropower Step-Up DC/DC Converter SHDN Threshold vs. VIN 1.05 TA=-40 o C 1.0 1.1 0.95 1 0.9 0.9 oC T A=25 0.85 0.8 Rdson (Ω ) SHDN THRESHO LD (V ) Switch Rdson vs. VIN 1.2 TA=85 oC 0.75 0.7 0.7 0.6 0.5 0.65 0.6 0.4 0.55 0.3 0.5 TA=85 oC TA=25 o C 0.8 2 2.5 3 3.5 4 4.5 5 5.5 TA=-40oC 0.2 6 2 VIN (V) 2.5 3 3.5 90 90 85 TA=25oC 85 6 LEDs 80 IOUT = 15mA 75 5.5 6 TA=25oC 80 8 LEDs IOUT = 30mA 75 70 70 2.5 2 3 3.5 4 4.5 65 5 2 2.5 3 3.5 Vin (V) 0.36 V 0.34 1.23 0.33 0.32 µA 0.31 1.21 0.30 1.20 -40 -20 0 25 5 55 Junction Temperature (o C) 0.29 85 12.4 12.3 OUTPUT VOLTAGE (V) 0.35 1.22 4.5 Output Voltage vs Load Current Feedback Biascur rent (uA) 1.25 1.24 4 Vin (V) FB Trip Point and FB Pin Current vs Temperature Feedback Trip Point (V) 5 4.5 Efficiency vs. VIN 95 EFFICIENCY(%) EFFICIENCY(%) Efficiency vs. VIN 12 4 VIN (V) VIN =4.2V C OUT =4.7uF VOUT=12V 12.2 VIN =2.5V 12.1 V IN =3.3V VIN =5V 12 11.9 11.8 0.5 4 8 20 40 50 70 IOUT (mA) 80 110 115 145 150 AME, Inc. AME5130 Micropower Step-Up DC/DC Converter Typical Switching Waveform Typical Switching Waveform 1 1 2 2 3 3 VOUT = 19.4V, VIN = 4.2V； 6 LEDs VOUT = 13.25V, VIN = 4.2V； 8 LEDs IOUT = 15mA IOUT = 30mA 1) VSW, 20V / div, DC 1) VSW, 20V / div, DC 2) Inductor current, 500mA / div, DC 2) Inductor current, 500mA / div, DC 3) VOUT, 100mV / div, AC 3) VOUT, 100mV / div, AC Start-Up/Shutdown Start-Up/Shutdown 1 2 3 3 1 2 VOUT = 20V, VIN = 2.5V VOUT = 20V, VIN = 2.5V 1) Vout, 100mV/div.AC 1) RUN, 1V/div,DC 2) Vsw,20V/div,DC 2) VOUT, 20V/div,DC 3) Inductor Current 500mA/div,DC 3) IL, 200mA/div,DC T=20µs/div T=400µs/div RL=1.3kΩ 13 AME, Inc. AME5130 Micropower Step-Up DC/DC Converter n Date Code Rule Marking Date Code Year A A A W W xxx0 A A A W W xxx1 A A A W W xxx2 A A A W W xxx3 A A A W W xxx4 A A A W W xxx5 A A A W W xxx6 A A A W W xxx7 A A A W W xxx8 A A A W W xxx9 n Tape and Reel Dimension SOT-25 P W AME AME PIN 1 Carrier Tape, Number of Components Per Reel and Reel Size 14 Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size SOT-25 8.0±0.1 mm 4.0±0.1 mm 3000pcs 180±1 mm AME, Inc. AME5130 Micropower Step-Up DC/DC Converter n Package Dimension SOT-25 Top View Side View SYMBOLS D MILLIMETERS MAX MIN MAX L MIN INCHES 1.20REF E θ1 S1 A1 0.00 0.15 0.0000 0.0059 b 0.30 0.55 0.0118 0.0217 D 2.70 3.10 0.1063 0.1220 E 1.40 1.80 0.0551 0.0709 1.90 BSC e H e 2.60 A θ1 b S1 0.07480 BSC 3.00 0.37BSC L Front View 0.0472REF 0 o 10 0.95BSC 0.10236 0.11811 0.0146BSC o 0o 10o 0.0374BSC A1 H A 15 www.ame.com.tw E-Mail: [email protected] Life Support Policy: These products of AME, Inc. are not authorized for use as critical components in life-support devices or systems, without the express written approval of the president of AME, Inc. AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and advises its customers to obtain the latest version of relevant information. AME, Inc. , October 2005 Document: 1015-DS5130-C Corporate Headquarter U.S.A. (Subsidiary) AME, Inc. Analog Microelectronics, Inc. 2F, 302 Rui-Guang Road, Nei-Hu District 3100 De La Cruz Blvd., Suite 201 Taipei 114, Taiwan. Tel: 886 2 2627-8687 Santa Clara, CA. 95054-2046 Tel : (408) 988-2388 Fax: 886 2 2659-2989 Fax: (408) 988-2489