TDK AVRL101A6R8GTA Countermeasure for surge voltage and static electricity Datasheet

Chip Varistors
Countermeasure for surge voltage and static electricity
AVR series
Type:
AVR-M
AVRL
Issue date:
August 2013
• All specifications are subject to change without notice.
• Conformity to RoHS Directive: This means that, in conformity with EU Directive 2002/95/EC, lead, cadmium, mercury, hexavalent chromium, and specific
bromine-based flame retardants, PBB and PBDE, have not been used, except for exempted applications.
(2/11)
Conformity to RoHS Directive
Varistors(SMD)
Countermeasure for Surge Voltage and Static Electricity
AVR Series AVR-M, AVRL Types
Varistors are voltage dependent nonlinear resistive elements with
a resistance that decreases rapidly when the voltage is over the
constant value.
Varistor is equivalent with Zener diode of two series connection.
Therefore, do not have polarity.
CURRENT vs. VOLTAGE CHARACTERISTICS
EQUIVALENT CIRCUIT
2 Zener Diodes
Current(A)
10–1
10–2 Zener diode
/Vz:6.8V
Positive direction
10–3
Chip varistor
/V1mA:12V
10–4
A capacitance content
10–5
–18 –14
–10
–6
–2
2
–10–5
6
10
14
18
–10–4
–10–3
Negative direction
–10–2
–10–1
Voltage(V)
THE EFFECT OF THE VARISTOR
WITHOUT VARISTOR
A malfunction and failure of electronic equipment
ESD, Surge voltage
ESD, Surge voltage
Power line
Signal line
WITH VARISTOR
Suppress abnormal voltage by inserting varistor in a circuit
IC
Power line
Signal line
IC
Insert a varistor between
a line and ground
: Chip varistor
• All specifications are subject to change without notice.
002-01 / 20130821 / e9c11_avr.fm
(3/11)
FEATURES
• No polarity, due to symmetrical current-voltage characteristics.
Equivalent to anode common type Zener diode.
• Excellent electrostatic absorption capability.
Response is as good or better than Zener diode.
Keeps symmetrical current-voltage characteristics even after
electrostatic absorption.
• Adopted the inner electrodes lamination structure.
Wide range of varistor voltages are available in series (6.8 to
39V).
Low capacitance items are available in series (1.1pF to).
World’s smallest 0402-, 0603-, 1005-, 1608-, 2012-chip types
are available in series.
• Excellent mount reliability. Good for Pb-free soldering.
Adopted (Ni/Sn) electroplating.
Achieved good solderability and solder heat resistance.
• Can replace a Zener diode + capacitor combination.
Reduced footprint and total mounting cost.
INTERNAL STRUCTURE
Inner electrode
Varistor body
(Palladium) (Zinc Oxide: ZnO semiconductor ceramics)
Sn plating
Ag termination
underlayer
Ni plating
CIRCUITS SYMBOL
OPERATIONAL VOLTAGE RANGES
0402 type
25
25
0603 type
19
1005 type
APPLICATIONS
• Electrostatic absorption
• Pulse noise absorption
28
1608 type
2012 type
0
28
5
10
15
20
Circuit voltage(V)
25
30
TEMPERATURE RANGES
Type
Operating
Storage
AVR-M1005/1608/2012
–40 to +125°C
–40 to +125°C
AVR-M0402/0603/AVRL
–40 to +85°C
–40 to +85°C
APPLICATION EXAMPLES
Consumer product
Mobile phone
Digital video camera
Digital camera
PDA
Note PC
DVD-ROM, CD-ROM
CD/MD/MP3 player
Game machine
In-car equipment
Application
Data terminal
LCD panel
Touch panel
Button and switch unit
Battery terminal
Audio-Video input-output terminal
Microphone/receiver unit
Controller unit
CAN-BUS
ECU
Connector
Air conditioner panel
Car audio
Car navigation
RECOMMENDED REFLOW SOLDERING CONDITIONS
Tpeak
Tmelt
Tpre
peak
tmelt
tpre
Time (s)
Item
Tpre
Tmelt
Tpeak
tpre
tmelt
Preheating temperature
Solder melting temperature
Peak temperature
Preheating time
Time more than solder melting
temperature
The number of times of reflow
possible
Specification
For eutectic
solder
160 to 180°C
200°C
240°C max.
100s max.
For lead-free
solder
150 to 180°C
230°C
260°C max.
120s max.
30s max.
40s max.
2 max.
2 max.
• All specifications are subject to change without notice.
002-01 / 20130821 / e9c11_avr.fm
(4/11)
AVR-M TYPE
PRODUCT IDENTIFICATION
SHAPES AND DIMENSIONS
0402/0603/1005/1608/2012 TYPES
AVR-M 1005 C 270 M T AAB
(1)
(2) (3) (4) (5) (6) (7)
W
AVRM 1005 C 6R8 N T 101 N
(1)
(2) (3) (4) (5) (6) (7) (8)
L
B
T
(1) Series name
(2) Dimensions LW
0402
0603
1005
1608
2012
Dimensions in mm
0.40.2mm
0.60.3mm
1.00.5mm
1.60.8mm
2.01.2mm
(3) Structure code
Type
L
W
T
B min.
0402
0603
1005
1608
2012
0.4±0.02
0.6±0.03
1.0±0.05
1.6±0.1
2.0±0.2
0.2±0.02
0.3±0.03
0.5±0.05
0.8±0.1
1.25±0.2
0.2±0.02
0.3±0.03
0.5±0.05
0.8±0.1
1.0±0.2
0.07
0.1
0.1
0.2
0.2
Weight
(mg)typ.
0.1
0.2
1.2
5
15
RECOMMENDED PC BOARD PATTERN
(4) Varistor voltage
27100V
(5) Varistor voltage tolerance
K
M
N
±10%
±20%
±30%
(6) Packaging style
T
Taping
c
270
b
a
b
Dimensions in mm
Type
0402
0603
1005
1608
2012
a
0.2
0.25 to 0.35
0.3 to 0.5
0.6 to 0.8
0.9 to 1.2
b
0.15 to 0.2
0.2 to 0.3
0.35 to 0.45
0.6 to 0.8
0.7 to 0.9
c
0.18 to 0.2
0.25 to 0.35
0.4 to 0.6
0.6 to 0.8
0.9 to 1.2
(7) Capacitance and TDK internal code
(5) Capacitance tolerance
N
±30%
• All specifications are subject to change without notice.
002-01 / 20130821 / e9c11_avr.fm
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ELECTRICAL CHARACTERISTICS
Maximum
Clamping
energy
voltage
E(Joule)
Vcl(V)
[10/1000µs]
[8/20µs]
max.
Maximum
peak
current Ip(A)
[8/20µs]
max.
Maximum continuous
voltage (Rated voltage)
Clamping voltage
Maximum energy
Maximum peak current
Capacitance
Packaging
quantities
(Taping)
(pieces/reel)
(4.76 to 8.84) 3.5
(9.6 to 14.4) 5.5
15[1A]
20[1A]
0.01
0.005
4
1
100 (70 to 130)
33 (23.1 to 43.9)
6.8
6.8
8
12.8
12
12.8
20
(4.76 to 8.84)
(4.76 to 8.84)
(6.4 to 9.6)
(10 to 15.6)
(9.6 to 14.4)
(10 to 15.6)
(16.0 to 24.0)
3.5
3.5
5.5
5.5
7.5
5.5
12
14[1A]
14[1A]
17[1A]
20[1A]
23[1A]
35[1A]
40[1A]
0.02
0.01
0.01
0.01
0.01
0.003
0.01
16
10
4
5
1
1
1
330 (231 to 429)
100 (70 to 130)
100 (70 to 130)
100 (70 to 130)
15,000
33
15 (10.5 to 19.5)
15 (10.5 to 19.5) [1MHz]
6.8
6.8
8
8
8
8
12
12
18
27
27
27
(4.76 to 8.84)
(4.76 to 8.84)
(6.4 to 9.6)
(6.4 to 9.6)
(6.4 to 9.6)
(6.4 to 9.6)
(9.6 to 14.4)
(9.6 to 14.4)
(14.4 to 21.6)
(24 to 30)
(21.6 to 32.4)
(21.6 to 32.4)
3.5
3.5
5.5
5.5
5.5
5.5
7.5
7.5
11
19
15
15
15[1A]
14[1A]
14[1A]
14[1A]
15[1A]
19[1A]
21[1A]
20[1A]
30[1A]
44[1A]
57[1A]
59[1A]
0.008
0.02
0.04
0.04
0.02
0.01
0.01
0.05
0.06
0.06
0.06
0.05
24
10
25
25
3
1
24
10
16
4
4
1
330 (231 to 429)
100 (70 to 130)
650
480
100
33
460 [1MHz]
130
120 [1MHz]
100 (70 to 130)
40
15
10,000
8
12
12
18
22
22
27
27
27
27
27
27
39
(6.4 to 9.6)
(9.6 to 14.4)
(9.6 to 14.4)
(14.4 to 21.6)
(19.8 to 24.2)
(19.8 to 24.2)
(24 to 30)
(24 to 30)
(24 to 30)
(24 to 30)
(21.6 to 32.4)
(21.6 to 32.4)
(35 to 43)
5.5
7.5
7.5
11
16
16
19
19
19
19
17
17
28
15[2A]
20[2A]
20[2A]
30[2A]
34[2A]
37[2A]
42[2A]
42[2A]
54[2A]
53[2A]
52[2A]
52[2A]
69[2A]
0.09
0.09
0.06
0.1
0.1
0.03
0.1
0.1
0.05
0.02
0.05
0.05
0.1
30
50
15
30
30
10
48
20
10
28
2
2
78
650
1050
400
600
560
210
430
160
60
80 (64 to 96)
30
15
270 (189 to 351)
4,000
12
22
39
(9.6 to 14.4) 7.5
(19.8 to 24.2) 16
(35 to 43)
28
20[5A]
38[5A]
62[5A]
0.2
0.3
0.3
60
100
100
1000
800
430
2,000
1
TERMINOLOGY
Item
Varistor voltage
(Breakdown voltage)
Capacitance
C(pF)
[1kHz, 1Vrms]
typ.
6.8
12
Unit
V1mA
(V)
Terminology
Voltage measured across the varistor
when DC1mA is applied.
Maximum DC voltage that can be applied
continuously.
Vdc
Varistor leakage current: 50µA max.
(V)
(Within the range of maximum allowable
circuit voltage)
Voltage appearing across the varistor
Vcl
when a pulse current (8/20µs1) of
(V)
specified peak value is applied.
Maximum energy that can be absorbed
E
without deteriorating varistor
(Joule) characteristics when an impulse
(10/1000µs2) is applied once.
Maximum current that can be withstood
Ip
without deteriorating varistor
(A)
characteristics when an impulse current
(8/20µs1) is applied once.
Capacitance measured at 1kHz
C
(or 1MHz) of oscillator frequency and
(pF)
1Vrms of oscillator voltage.
20,000
8/20µs test waveform
100%
90%
Current
0402 type
AVRM0402C6R8NT101N
AVRM0402C120MT330N
0603 type
AVRM0603C6R8NT331N
AVRM0603C6R8NT101N
AVRM0603C080MT101N
AVRM0603C120MT101N
AVR-M0603C120MTAAB
AVRM0603C120MT150N
AVRM0603C200MT150N
1005 type
AVRM1005C6R8NT331N
AVRM1005C6R8NT101N
AVR-M1005C080MTAAB
AVR-M1005C080MTADB
AVR-M1005C080MTABB
AVR-M1005C080MTACB
AVR-M1005C120MTACC
AVR-M1005C120MTAAB
AVR-M1005C180MTAAB
AVRM1005C270KT101N
AVR-M1005C270MTAAB
AVR-M1005C270MTABB
1608 type
AVR-M1608C080MTAAB
AVR-M1608C120MT6AB
AVR-M1608C120MT2AB
AVR-M1608C180MT6AB
AVR-M1608C220KT6AB
AVR-M1608C220KT2AB
AVR-M1608C270KT6AB
AVR-M1608C270KT2AB
AVR-M1608C270KTACB
AVRM1608C270KT800M
AVR-M1608C270MTAAB
AVR-M1608C270MTABB
AVRM1608C390KT271N
2012 type
AVR-M2012C120MT6AB
AVR-M2012C220KT6AB
AVR-M2012C390KT6AB
Maximum
continuous voltage
(Rated voltage)
Vdc(V)
max.
50%
8µs
20µs
Time
2
10/1000µs test waveform
100%
90%
Energy
Part No.
Varistor voltage
(Breakdown voltage)
V1mA(V)[DC1mA]
50%
10µs
1000µs
Time
• All specifications are subject to change without notice.
002-01 / 20130821 / e9c11_avr.fm
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AVRL TYPE
PRODUCT IDENTIFICATION
SHAPES AND DIMENSIONS
AVRL 10 1A 3R3 F T A
(1) (2) (3) (4) (5) (6) (7)
W
L
(1) Series name
(2) Dimensions LW
B
0.40.2mm
0.60.3mm
1.00.5mm
1.60.8mm
T
04
06
10
16
Dimensions in mm
(3) Maximum continuous voltage
1A
1C
1E
10Vdc
16Vdc
25Vdc
(4) Capacitance
1.1pF
2.2pF
3.3pF
6.8pF
T
B min.
0402
0603
1005
1608
0.4±0.02
0.6±0.03
1.0±0.05
1.6±0.1
0.2±0.02
0.3±0.03
0.5±0.05
0.8±0.1
0.2±0.02
0.3±0.03
0.5±0.05
0.8±0.1
0.07
0.1
0.1
0.2
b
±0.3pF
±0.5pF
±1pF
±2pF
Weight
(mg)typ.
0.1
0.2
1.2
5
a
b
Dimensions in mm
Type
0402
0603
1005
1608
a
0.2
0.25 to 0.35
0.3 to 0.5
0.6 to 0.8
Capacitance
C(pF)
[1MHz, 1Vrms]
Maximum continuous voltage
(Rated voltage)
Vdc(V)
max.
Insulation resistance
Rdc(M)
[3Vrms]
min.
Varistor voltage
V1mA(V)[DC1mA]
typ.
Packaging quantities
(Taping)
(pieces/reel)
1.1[0.8 to 1.4]
25
10
39
20,000
1.1[0.8 to 1.4]
25
10
39
15,000
1.1[0.8 to 1.4]
1.1[0.8 to 1.4]
2.2[1.7 to 2.7]
3.3[2.3 to 4.3]
6.8[4.8 to 8.8]
10
10
16
10
10
10
10
10
10
10
90
39
90
27
27
10,000
1.1[0.8 to 1.4]
1.1[0.8 to 1.4]
3.3[2.3 to 4.3]
6.8[4.8 to 8.8]
10
10
10
10
10
10
10
10
90
39
27
27
4,000
(6) Packaging style
T
W
RECOMMENDED PC BOARD PATTERN
(5) Capacitance tolerance
N
D
F
G
L
c
1R1
2R2
3R3
6R8
Type
Taping
b
0.15 to 0.2
0.2 to 0.3
0.35 to 0.45
0.6 to 0.8
c
0.18 to 0.2
0.25 to 0.35
0.4 to 0.6
0.6 to 0.8
(7) Varistor voltage and TDK internal code
ELECTRICAL CHARACTERISTICS
Part No.
0402 type
AVRL041E1R1NTA
0603 type
AVRL061E1R1NTA
1005 type
AVRL101A1R1NTA
AVRL101A1R1NTB
AVRL101C2R2DTA
AVRL101A3R3FTA
AVRL101A6R8GTA
1608 type
AVRL161A1R1NTA
AVRL161A1R1NTB
AVRL161A3R3FTA
AVRL161A6R8GTA
TERMINOLOGY
Item
Capacitance
Maximum continuous
voltage (Rated voltage)
Insulation resistance
Varistor voltage
(Breakdown voltage)
Unit
C
(pF)
Vdc
(V)
Rdc
(M )
V1mA
(V)
Terminology
Capacitance measured at 1MHz of oscillator frequency and 1Vrms
of oscillator voltage.
Maximum DC voltage that can be applied continuously.
Varistor leakage current: 50µA max.
(Within the range of maximum allowable circuit voltage)
Insulation resistance appearing across the varistor when specified
voltage is applied.
Voltage measured across the varistor when DC1mA is applied.
• All specifications are subject to change without notice.
002-01 / 20130821 / e9c11_avr.fm
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TYPICAL ELECTRICAL CHARACTERISTICS
CURRENT vs. VOLTAGE CHARACTERISTICS
IMPEDANCE vs. FREQUENCY CHARACTERISTICS
10000
100
15pF 6.8pF 3.3pF
V1mA:12V
10–1
1000
30pF
V1mA:8V
Impeadance(Ω)
Current(A)
10–2
V1mA:27V
V1mA:22V
10–3
V1mA:18V
10–4
100
10
1
10–5
1050pF
10–6
10–7
0
10
20
Voltage(V)
30
0.01
1
40
TRANSMISSION CHARACTERISTICS
10
100
Frequency(MHz)
1000
10000
CAPACITANCE vs. FREQUENCY CHARACTERISTICS
10
10000
1050pF
0
3.3pF
6.8pF
30pF
–20
15pF
160pF
1050pF
650pF
–30
650pF
400pF
1000
Capacitance(pF)
–10
Insertion loss(dB)
160pF
400pF
650pF
0.1
400pF
160pF
100
30pF
15pF
6.8pF
–40
10
3.3pF
–50
–60
1
10
100
Frequency(MHz)
1000
10000
1
1
10
100
Frequency(MHz)
1000
10000
• All specifications are subject to change without notice.
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ELECTROSTATIC DISCHARGE TESTS
TEST CONDITIONS
150pF, 330 contact discharge
Charged voltage /8kV, 0.1s interval
MEASURING CIRCUIT
10MΩ
330Ω
High voltage
DC power supply
Discharge gun
Test
sample
150pF
ESD
simulator
ESD simulator
AVR-M1005 TYPE
20
20
10
10
ΔV1mA/V1mA(%)
ΔV1mA/V1mA(%)
AVR-M0603 TYPE
0
–10
–20
–30
–40
–50
–60
0.1
–20
–30
–40
–50
1
10
Number of discharge(Times)
–60
0.1
100
AVR-M1608 TYPE
20
8
10
7
0
–10
–20
–30
–40
–50
–60
0.1
1
10
Number of discharge(Times)
1
10
Number of discharge(Times)
100
AVRL101A3R3F
Capacitance(pF) [1MHz]
ΔV1mA/V1mA(%)
0
–10
100
6
5
4
3
2
1
0
0.1
1
10
Number of discharge(Times)
100
• All specifications are subject to change without notice.
002-01 / 20130821 / e9c11_avr.fm
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ELECTROSTATIC ABSORPTION CHARACTERISTICS
DISCHARGE CURRENT WAVEFORM
WAVEFORM PARAMETERS [IEC61000-4-2]
8
Discharge current(A)
6
ESD Charge
voltage
(kV)
2
4
6
8
Test level
150pF, 330Ω,
Contact discharge, Test level 1
7
1
2
3
4
5
4
3
First peak current
of discharge
(A)
7.5
15
22.5
30
Rise time
(ns)
0.7 to 1.0
0.7 to 1.0
0.7 to 1.0
0.7 to 1.0
2
1
MEASURING CIRCUIT
0
–1
–50
0
50
100
150
Time(ns)
200
250
10MΩ
300
High voltage
DC power supply
DISCHARGE VOLTAGE WAVEFORM
150pF
ESD simulator
350
Open waveform
300
Discharge gun
AVR-M1005C120MTAAB / V1mA:12V
250
Voltage(V)
330Ω
200
Test
sample
AVR-M1005C080MTAAB / V1mA:8V
150
60dB attenuator
Zener diode /Vz:6.2V
ESD
simulator
100
50
0
–50
–50
0
50
100
150
Time(ns)
200
250
50Ω
Oscilloscope
I/O impedance: 50Ω
Frequency range: DC to 18GHz
300
ESD ABSORPTION CHARACTERISTICS
COMPARISON OF VARIOUS ELEMENTS
Clamping voltage (V)
350
300
250
269V
down
258V
down
271V
down
200
150
100
101V
down
50
0
Open waveform
93V
down
96V
down
AVR-M1005C080MTAAB AVR-M1005C120MTAAB Zener diode/Vz:6.2V
Peak
316
45
58
47
Average
117
16
24
21
(voltage)
Peak voltage:Peak voltage of standing up part
Average voltage : Average voltage of 30 to 100ns
Peak
voltage
ESD (Electro Static Discharge)
absorption characteristics of V1mA-8V
is superior to Vz-6.2V Zener diode.
Average
voltage
30
100
(ns)
• All specifications are subject to change without notice.
002-01 / 20130821 / e9c11_avr.fm
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MERITS OF REPLACEMENT FROM ZENER DIODE
(1) Reduction in the number of parts
REDUCTION EXAMPLES
Zener diode+capacitor
Chip varistor
APPLICATION EXAMPLES
SMART PHONE
To LCD driver
Microphone/Receiver
LCD panel
Button
Data terminal
EXAMPLE OF REPLACEMENT AT AUDIO TERMINAL
: Chip varistor
Audio
connector
Audio/out
Audio
AMP
AUDIO/VIDEO
Monitor
OUT
Audio
connector
Audio/out
Audio
AMP
Video1
in
Video2
in
Video3
in
Video5
in
Digi
Video
Video
Video
Video
L L/MONO L/MONO L/MONO L/MONO
Audio
Audio
Audio
Audio
Audio
R
: Chip varistor
Insulation resistance
of tested circuit(Ω)
(2) Improved electrostatic absorption capability
COMPARE DATA OF CHIP VARISTOR AND ZENER DIODE
ABOUT IC PROTECTION
: Chip varistor
10–7
AVR-M1608C120MT6AB
10–6
10–5
With Zener Diode
10–4
10–3
0
2
4
6
8
10
ESD voltage(kV)
12
14
CMOS: D74HC04C
ESD generator : Noise Laboratory Co.,Ltd., ESS -630A
200pF-0Ω method model equipment
Contact type discharge
ESD applied point: Vcc-ground
• All specifications are subject to change without notice.
002-01 / 20130821 / e9c11_avr.fm
(11/11)
APPLICATION EXAMPLES
USB 2.0
VDD
USB cable
USB IC
D–
D+
USB connector
F.G.
: Chip varistor
MEASURING CIRCUIT
Sample
IC
USB2.0
board on
PC
Test
board
Test set
: Chip varistor
WITHOUT VARISTOR
WITH VARISTOR
AVRL101A3R3FTA (3.3pF)
AVRL101A6R8GTA (6.8pF)
• All specifications are subject to change without notice.
002-01 / 20130821 / e9c11_avr.fm