Kexin CZT122 Surface mount npn silicon power darlington transistor Datasheet

Transistors
IC
SMD Type
Surface Mount NPN Silicon Power Darlington Transistor
KZT122 (CZT122)
SOT-223
Features
Unit: mm
+0.2
3.50-0.2
6.50
High current (max. 5A).
Low voltage (max. 100V).
+0.1
3.00-0.1
+0.15
1.65-0.15
0.1max
+0.05
0.90-0.05
+0.2
-0.2
+0.2
0.90-0.2
+0.3
7.00-0.3
4
1 Base
2 Collector
1
3
2
3 Emitter
+0.1
0.70-0.1
2.9
4.6
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
5
V
IC
5
A
Collector current
ICP
8
A
Base current
IB
120
mA
power dissipation
PD
2
W
Thermal Resistance.Junction-to-Ambient
R
62.5
JA
Junction temperature
Tj
150
Storage temperature
Tstg
-65 to +150
/W
Electrical Characteristics Ta = 25
Parameter
Collector to emitter breakdown voltage
Symbol
Testconditons
VCEO
IC=30mA
Min
Typ
Max
100
Unit
V
Collctor cutoff current
ICEO
VCE=50V
500
A
Collector cutoff current
ICBO
VCB = 100 V
200
A
Emitter cutoff current
IEBO
VEB = 5.0 V
2.0
mA
DC current gain
hFE
IC = 500 mA; VCE =3.0 V
1000
IC = 3A; VCE = 3.0V
1000
Collector to emitter saturation voltage
VCE(sat) IC = 3.0A; IB = 12mA
2.0
V
Base to emitter saturation voltage
VBE(sat) IC = 5.0A; IB = 20mA
4.0
V
Output capacitance
Cob
VCB = 10 V, IE = 0,f=1.0MHz
Transition frequency
fT
IC= 3A; VCE =4V; f = 1.0 MHz
200
4.0
pF
MHz
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