ADVANCED
LINEAR
DEVICES, INC.
ALD1108E/ALD1110E
QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD™)
FEATURES
BENEFITS
• Operates from 2V, 3V, 5V to 10V
• Flexible basic circuit building block and design element
• Very high resolution -- average programmable voltage
• Simple, elegant single-chip solution
resolution of 0.1mV
to trimming voltage/current values
• Direct in-circuit active element operation
and programming
• Wide dynamic range -- current levels from 0.1µA
to 3000µA
• Remotely and electrically trim parameters on
circuits that are physically inaccessible
• Voltage adjustment range from 1.000V to 3.000V
in 0.1mV steps
Proven, non-volatile CMOS technology
Typical 10 years drift of less than 2mV
Usable in voltage mode or current mode
High input impedance -- 1012Ω
Very high DC current gain -- greater than 109
Device operating current has positive temperature
coefficient range and negative temperature
coefficient range with cross-over zero temperature
coefficient current level at 68µA
• Tight matching and tracking of on-resistance
between different devices with programming
• Very low input currents and leakage currents
• Low cost, monolithic technology
• Application-specific or in-system programming modes
• User programmable software-controlled automation
• User programmability of any standard/custom
configuration
• Micropower operation
• Available in standard PDIP, SOIC and hermetic
CDIP packages
• Suitable for matched-pair balanced circuit configuration
• Suitable for both coarse and fine trimming applications
•
•
•
•
•
•
ORDERING INFORMATION
• Usable in environmentally sealed circuits
• No system overhead or active circuitry required
• No mechanical moving parts -- high G-shock
tolerance
• Improved reliability, dependability, dust and
moisture resistance
• Cost and labor savings
• Small footprint for high board density
applications
• Fully automated test and trimming environment
PIN CONFIGURATION
ALD1108E
PN1
1
GN1
2
DN1
3
S12
4
16-Pin
Plastic Dip
Package
16-Pin
SOIC
Package
ALD1108E DC
ALD1108E PC
ALD1108E SC
Operating Temperature Range*
-55°C to +125°C
0°C to +70°C
0°C to +70°C
8-Pin
CERDIP
Package
8-Pin
Plastic Dip
Package
8-Pin
SOIC
Package
ALD1110E DA
ALD1110E PA
ALD1110E SA
EPAD 2
v+
v-
16
PN2
15
GN2
14
DN2
13
V+
V-
5
12
S34
DN4
6
11
DN3
GN4
7
10
GN3
PN4
8
9
PN3
8
PN2
Operating Temperature Range*
-55°C to +125°C
0°C to +70°C
0°C to +70°C
16-Pin
CERDIP
Package
EPAD 1
EPAD 4
EPAD 3
DC, PC, SC PACKAGE
PIN CONFIGURATION
ALD1110E
PN1
1 EPAD 1
EPAD 2
GN1
2
7
GN2
DN1
3
6
DN2
S12, V-
4
5
V+
v+
DA, PA, SA PACKAGE
* Contact factory for industrial temperature range
© 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
APPLICATIONS
GENERAL DESCRIPTION
• Precision PC-based electronic calibration
• Automated voltage trimming or setting
• Remote voltage or current adjustment of
ALD1108E/ALD1110E are monolithic quad/dual EPADs (Electrically
Programmable Analog Device) that utilize CMOS MOSFET with electrically programmable threshold voltage. For a given input voltage,
changing the threshold turn-on voltage of a MOSFET device precisely
changes its drain on-current, resulting in an on-resistance characteristic that can be precisely set and controlled. Used as an in-circuit element
for trimming or setting a combination of voltage and/or current characteristics, it can be programmed via a Personal Computer remotely and
automatically via software control. Once programmed and set, the set
voltage and current levels are stored indefinitely inside the device as a
precisely controlled nonvolatile stored charge, which is not affected
during normal operation of the device, even after power has been turned
off.
inaccessible nodes
• PCMCIA based instrumentation trimming
• Electrically adjusted resistive load
• Temperature compensated current sources
and current mirrors
• Electrically trimmed/calibrated current
sources
• Permanent precision preset voltage level
shifter
• Low temperature coefficient voltage and/or
current bias circuits
• Multiple preset voltage bias circuits
• Multiple channel resistor pull-up or pull-down
•
•
•
•
•
•
•
•
circuits
Microprocessor based process control systems
Portable data acquisition systems
Battery operated terminals and instruments
Remote telemetry systems
Programmable gain amplifiers
Low level signal conditioning
Sensor and transducer bias currents
Neural networks
BLOCK DIAGRAM
ALD1110E
V+(5)
PN1 (1)
DN2 (6)
DN1 (3)
PN2 (8)
~
GN2 (7)
GN1(2)
EPAD 1
The basic device is a monotonically adjustable device which means the
device can normally be programmed to increase in threshold voltage
and to decrease in drain-on current as a function of a given input bias
voltage. Once adjusted, the voltage and current conditions are permanent and not reversible. However, a given EPAD device can be adjusted
many times to continually increase the threshold voltage. A pair of EPAD
devices can also be connected such that one device is used to adjust a
parameter in one direction and the other device is used to adjust the
same parameter in the other direction.
The ALD1108E/ALD1110E can be pre-programmed with the ALD
EPAD programmer to obtain the desired voltage and current levels. Or,
they can be programmed as an active in-system element in a user
system, via user designed interface circuitry. For more information, see
Application Note AN1108.
~ EPAD 2
S12 (4)
The ALD1108E/ALD1110E are devices built with ALD's EPAD technology, an electrically programmable device technology refined for analog
applications. The ALD1108E/ALD1110E functions like a regular MOSFET
transistor except with precise user preset threshold voltage. Using the
ALD1108E/ALD1110E is simple and straight forward. The device is
extremely versatile as a circuit element and design component. It
presents the user with a wealth of possible applications, limited only by
the imagination of the user and the many ways an analog MOSFET
device can be used as a circuit design element. The ALD1108E/
ALD1110E do not need other active circuitry for functionality.
V- (4)
BLOCK DIAGRAM
ALD1108E
V+(13)
PN (1)
DN1 (3)
DN2 (14)
PN2 (16)
PN3 (9)
DN3 (11)
DN4 (6)
PN4 (8)
~
GN1(2)
EPAD 2
EPAD 1
S12 (4)
ALD1108E/ALD1110E
GN4 (7)
GN2 (15) GN3(10)
~
EPAD 3
V- (5)
Advanced Linear Devices
EPAD 4
S34 (12)
2
ABSOLUTE MAXIMUM RATINGS
Supply voltage, V+ referenced to VSupply voltage, VS referenced to VDifferential input voltage range
Power dissipation
Operating temperature range PA, SA, PC, SC package
DA, DC package
Storage temperature range
Lead temperature, 10 seconds
-0.3V to +13.2V
±6.6V
0.3V to V+ +0.3V
600 mW
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25°C V+ = +5.0V unless otherwise specified
ALD1108E
Parameter
Symbol
Supply Voltage
V+
1.2
Initial Threshold Voltage
Vt i
0.990
Programmable Vt Range
Vt
1.000
Drain - Gate Connected
TCVDS
Voltage Tempco
Min
Typ
1.000
ALD1110E
Max
Min
10.0
1.2
1.010
0.990
3.000
1.000
Typ
1.000
Test
Max
Unit
10.0
V
1.010
V
3.000
V
Conditions
IDS = 1µA T A = 21°C
-1.6
-1.6
mV/°C
ID = 5µA
-0.3
0.0
-0.3
0.0
mV/°C
mV/°C
ID = 50µA
ID = 68µA
+2.7
+2.7
mV/°C
ID = 500µA
Initial Offset
Voltage
VOS i
1
Tempco of VOS
TCVOS
5
Differential Threshold Voltage
DV t
Tempco of Differential
Threshold Voltage
TCDV t
0.033
Long Term Drift
∆V t /∆t
-0.02
Long Term Drift Match
∆V t /∆t
-5
Drain Source On Current
IDS(ON)
Drain Source On Current
IDS(ON)
Initial Zero Tempco Voltage
VZTCi
Zero Tempco Current
5
1
5
µV/°C
5
2.000
2.000
0.033
-0.02
VDS1 = VDS2
V
mV/°C
mV
1000 Hours
-5
µV
1000 Hours
3.0
3.0
mA
VG =VD = 5V VS = 0V
Vt = 1.0
0.8
0.8
mA
VG =VD = 5V V S = 0V
Vt = 3.0
1.52
1.52
V
V t = 1.000V
IZTC
68
68
µA
Initial On-Resistance
RON i
500
500
Ω
On-Resistance Match
∆RON
0.5
0.5
%
ALD1108E/ALD1110E
-0.05
mV
Advanced Linear Devices
-0.05
VGS ¡= 5V VDS = 0.1V
3
OPERATING ELECTRICAL CHARACTERISTICS (cont'd)
TA = 25°C V+ = +5.0V unless otherwise specified
ALD1108E
Transconductance
gm
1.4
1.4
mA/V
VD = 10V,VG =Vt + 4.0
Transconductance Match
∆gm
25
25
µA/V
VD = 10V,VG =Vt + 4.0
Low Level Output
Conductance
gOL
6
6
µA/V
VG = Vt +0.5V
High Level Output
Conductance
gOH
68
68
µA/V
VG = Vt +4.0V
Drain Off Leakage Current
ID(OFF)
400
4
pA
nA
TA = 125°C
100
1
pA
nA
TA = 125°C
Input Capacitance
10
CISS
Cross Talk
tRLX
Relaxation Voltage
VRLX
Max
5
IGSS
Relaxation Time Constant
Typ
Min
Typ
Test
Symbol
Gate Leakage Current
Min
ALD1110E
Parameter
400
4
5
100
1
10
Max
Unit
25
25
pF
60
60
dB
2
2
-0.3
-0.3
Conditions
f = 100KHz
Hours
%
1.0V ≤ Vt ≤ 3.0V
PROGRAMMING CHARACTERISTICS
TA = 25°C V+ = +5.0V unless otherwise specified
Parameter
Symbol
Programmable Vt Range
Vt
Min
ALD1108E
Typ
1.000
ALD1110E
Typ
Max
Min
3.000
1.000
Max
3.000
Unit
Test
Conditions
V
Resolution of V t
Programming
RV t
Change in Vt Per
Programming Pulse
∆V t / N
Programming Voltage
Vp
Programming Current
Ip
Pulse Frequency
ƒ pulse
ALD1108E/ALD1110E
0.1
1
0.1
0.5
0.05
11.75
12.00
1
0.5
0.05
12.25
11.75
12.00
2
2
50
50
Advanced Linear Devices
mV
mV/ pulse
12.25
Vt = 1.0V
Vt = 2.5V
V
mA
KHZ
4
TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
OUTPUT CHARACTERISTICS
+1.0
TA = +25°C
DRAIN SOURCE ON CURRENT
(mA)
DRAIN SOURCE ON CURRENT
(mA)
20
VGS = +12V
15
VGS = +10V
VGS = + 8V
10
VGS = + 6V
5
VGS = + 4V
VGS = + 2V
0
TA = +25°C
VGS = +10V
0
VGS = +6V
VGS = +8V
-1.0
0
2
4
6
8
10
12
-200 -160 -120 -80 -40
DRAIN SOURCE ON VOLTAGE (V)
40
80 120 160 +200
DRAIN SOURCE ON CURRENT vs.
THRESHOLD VOLTAGE
3.0
DRAIN SOURCE ON CURRENT
(mA)
6
DRAIN SOURCE ON CURRENT
(mA)
0
DRAIN SOURCE VOLTAGE (mV)
DRAIN SOURCE ON CURRENT vs.
AMBIENT TEMPERATURE
VG = 5V
5
4
Vt = 1.0V
3
Vt = 1.5V
Vt = 2.0V
2
Vt = 2.5V
1
Vt = 3.0V
-50
-25
0
25
50
75
100
TA = +25°C
VDS = +5.0V
VGS = +5V
VGS = +4V
2.0
VGS = +3V
1.0
VGS = +2V
VGS = +1V
0
0
0
125
0.5
1.0
1.5
2.0
2.5
3.0
AMBIENT TEMPERATURE (°C)
THRESHOLD VOLTAGE (V)
TRANSCONDUCTANCE vs.
THRESHOLD VOLTAGE
HIGH LEVEL OUTPUT CONDUCTANCE
vs.THRESHOLD VOLTAGE
3.5
75
2.0
HIGH LEVEL OUTPUT
CONDUCTANCE (µA/V)
TA = +25°C
TRANSCONDUCTANCE
( mA/V)
VGS = +12V
1.5
1.0
5.0
VGS = Vt + 4.0V
VDS = 10V
TA = +25°C
70
60
VGS = Vt + 4.0V
VDS = 5.0V
50
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
ALD1108E/ALD1110E
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
THRESHOLD VOLTAGE (V)
THRESHOLD VOLTAGE (V)
Advanced Linear Devices
5
TYPICAL PERFORMANCE CHARACTERISTICS
LOW LEVEL OUTPUT CONDUCTANCE
vs. AMBIENT TEMPERATURE
THRESHOLD VOLTAGE vs.
AMBIENT TEMPERATURE
12
4.0
ID = 1.0µA
3.0
Vt = 3.0V
2.0
Vt = 2.0V
LOW LEVEL OUTPUT
CONDUCTANCE(µA/V)
THRESHOLD VOTAGE
(V)
VDS = VGS
Vt = 2.5V
Vt = 1.5V
1.0
Vt = 1.0V
VGS = Vt + 0.5V
VDS = 5.0V
10
8
6
4
2
0
-50
-25
0
25
50
75
100
-50
125
-25
AMBIENT TEMPERATURE (°C)
DRAIN OFF LEAKAGE CURRENT (pA)
TRANSCONDUCTANCE vs.
AMBIENT TEMPERATURE
TRANSCONDUCTANCE
(mA/V)
2.5
2.0
1.5
1.0
0.5
0
-50
-25
0
25
50
75
100
400
300
IDS
200
100
0
-50
-25
70
60
50
40
50
75
100
25
50
75
100
125
10
TA = +25°C
5
VGS = Vt + 0.5V
VDS = 5.0V
0
125
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
THRESHOLD VOTAGE (V)
AMBIENT TEMPERATURE (°C)
ALD1108E/ALD1110E
0
LOW LEVEL OUTPUT CONDUCTANCE
vs. THRESHOLD VOLTAGE
LOW LEVEL CURRENT OUTPUT
CONDUCTANCE (µA/V)
HIGH LEVEL OUTPUT
CONDUCTANCE (mA/V)
80
25
125
100
AMBIENT TEMPERATURE (°C)
VGS = Vt + 4.0V
VDS = 5.0V
0
75
500
125
100
-25
50
600
HIGH LEVEL OUTPUT CONDUCTANCE
vs. AMBIENT TEMPERATURE
-50
25
DRAIN OFF LEAKAGE CURRENT IDS
vs. AMBIENT TEMPERATURE
AMBIENT TEMPERATURE (°C)
90
0
AMBIENT TEMPERATURE (°C)
Advanced Linear Devices
6
TYPICAL PERFORMANCE CHARACTERISTICS
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
100
-55°C
4
-25°C
3
0°C
2
1
70°C
0
0
CHANGE IN DIFFERENTIAL
THRESHOLDVOLTAGE (mV)
DRAIN SOURCE ON CURRENT
( µA)
5
1
2
3
125°C
4
Zero Temperature
Coefficient (ZTC)
ZTC
125°C
125°C
125°C
50
{
{
Vt
= 1.0V
{
Vt
= 1.2V
- 25°C
Vt
= 1.4V
- 25°C
- 25°C
1.0
5
1.4
1.2
1.8
1.6
2.0
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
CHANGE IN DIFFERENTIAL THRESHOLD
VOLTAGE vs. AMBIENT TEMPERATURE
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. ON - RESISTANCE
10000
+10
+8
REPRESENTATIVE UNITS
+6
+4
+2
0
-2
-4
-6
-8
VDS = RON • IDS(ON)
VGS = +0.9V to +5.0V
1000
VDS = 5.0V
100
D
VDS
10
IDS(ON)
VGS
1.0
S
VDS = 0.5V
0.1
-10
-50
-25
0
25
50
75
100
0.1
125
1.0
GATE SOURCE VOLTAGE vs. DRAIN
SOURCE ON CURRENT
4
IDS(ON)
VGS
VDS = 0.5V
TA = +125°C
S
3
VDS = 0.5V
TA = +25°C
2
VDS = 5V
TA = +25°C
1
VDS = 5V
VDS = RON • IDS(ON)
TA = +125°C
0
0.1
1
10000
10
100
1000
Vt = 1.000V
VDS = VGS
4
TA = -55°C
3
TA = 0°C
2
TA = +50°C
1
TA = +125°C
0
10000
DRAIN SOURCE ON CURRENT (µA)
ALD1108E/ALD1110E
1000
5
VDS
D
100
DRAIN SOURCE ON CURRENT vs.
OUTPUT VOLTAGE
DRAIN SOURCE ON CURRENT
(mA)
5
10
ON - RESISTANCE (KΩ)
AMBIENT TEMPERATURE (°C)
GATE SOURCE VOLTAGE (V)
ZTC
0
DRAIN SOURCE ON CURRENT,
BIAS CURRENT (µA)
DRAIN SOURCE ON CURRENT
(mA)
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
0
1
2
3
4
5
OUTPUT VOLTAGE (V)
Advanced Linear Devices
7
TYPICAL PERFORMANCE CHARACTERISTICS
OFFSET VOLTAGE vs.
AMBIENT TEMPERATURE
GATE LEAKAGE CURRENT
vs. AMBIENT TEMPERATURE
OFFSET VOLTAGE (mV)
3
GATE LEAKAGE CURRENT (pA)
4
REPRESENTATIVE UNITS
2
1
0
-1
-2
-3
600
500
400
300
200
IGSS
100
0
-4
-50
-25
0
25
50
75
100
-50
125
GATE SOURCE VOLTAGE
vs. ON - RESISTANCE
+125°C
VGS
DRAIN- GATE DIODE CONNECTED
VOLTAGE TEMPCO (mV/ °C )
GATE SOURCE VOLTAGE (V)
4.0
VDS
IDS(ON)
S
0.0V ≤ VDS ≤ 5.0V
3.0
+25°C
2.0
1.0
0.1
1
10
100
25
50
75
100
125
1000
5
-55°C ≤ TA ≤ +125°C
2.5
0
-2.5
-5
10000
ON - RESISTANCE (KΩ)
ALD1108E/ALD1110E
0
DRAIN - GATE DIODE CONNECTED VOLTAGE
TEMPCO vs. DRAIN SOURCE ON CURRENT
5.0
D
-25
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
1
10
100
1000
DRAIN SOURCE ON CURRENT (µA)
Advanced Linear Devices
8
DEFINITION OF TERMS
Bias Voltage (V BIAS)
Bias Voltage of an EPAD is the voltage across Gate and Source terminals with Gate and Drain connected at a specified
Drain to Source Current, IDS. When IDS = 1µA, Bias Voltage is identical to Threshold Voltage. Input Bias Voltage of an
EPAD is the voltage across Gate and Source terminals, VGS. Output Bias Voltage of an EPAD is the voltage across Drain
and Source terminals VDS at a specified Drain to Source Current, I DS .
Change in Threshold Voltage Per Programming Pulse (∆Vt/ N)
This is the voltage change in Threshold Voltage while the EPAD is being programmed with an electrical voltage pulse.
This voltage change can be very small as it varies as an exponential function of Vt. Typical initial values range from
0.1 mV/step to 1.0mV/step when Vt = 1 Volt and decreases to 10µV/step or lower at higher Vt values.
Delta Threshold Voltage (∆Vt)
Delta Threshold Voltage is a change in the threshold voltage of the same EPAD device after programming.
Differential Threshold Voltage (DVt)
Differential Threshold Voltage is the difference of Vt between the two EPAD devices, each electrically programmed to a
different Vt value. This is also a fixed relative voltage that tracks with temperature, with tempco value of TC DVt for 1 volt
relative Vt between two EPADs.
EPAD™
Electrically Programmable Analog Device is an Integrated Circuit that utilizes CMOS FET with electrically programmable
Threshold Voltage. Once programmed, the set Threshold Voltage is retained indefinitely, even when power is off.
Initial Threshold Voltage (Vt i)
The initial Vt of a device before being electrically programmed to a new Vt value.
Initial Zero Tempco Voltage (VZTCi)
Initial Drain Voltage at which the Temperature Coefficient of the Drain-Gate connected Voltage, relative to the Source
Voltage, is at zero, when the initial Vt is at 1.000 volt.
Long Term Drift (∆Vt /∆t)
Long Term Drift is the nominal change in threshold voltage of an EPAD for a time period of 1,000 hours.
Long Term Drift Match (∆Vt /∆t)
Long Term Drift Match is the nominal match in long term drift between two EPADs, for a time period of 1,000 hours.
Monotonic Adjustment of Vt
Vt Adjustment can be changed in one direction only.
Offset Voltage (VOS)
Offset Voltage is the small difference in Vt between two EPAD devices when the two devices have the same initial
electrically programmed Vt values.
Programming Voltage (Vp)
The voltage at which programming of the threshold voltage of the EPAD occurs. This voltage, the control of timing of this
voltage and the impedance of the voltage source is critical to the way the EPAD is programmed and its subsequent device
performance. The user is advised to use an ALD EPAD programmer which has been specifically designed and developed
for this task.
Relaxation Time Constant (tRLX)
Relaxation Time Constant is the time constant associated with the Relaxation Voltage drop after an EPAD has
been programmed.
ALD1108E/ALD1110E
Advanced Linear Devices
9
Relaxation Voltage (VRLX )
After programming, an EPAD threshold voltage will “ relax “ a small amount, which corresponds to a small loss of interface
charge. This is a small, fixed voltage step and decreases at a Relaxation Time Constant. The Relaxation Voltage is the
voltage change (voltage drop) after three Relaxation Time Constants. To compensate for this, an initial relaxation voltage,
expressed as a percentage of the programmed Vt, can be added to the initial desired target voltage.
Tempco of Differential Threshold Voltage (TCDVt )
Temperature Coefficient of Differential Threshold Voltage is the change in difference between two EPAD threshold
voltages per degree C change in temperature when the two devices initially have 1V relative electrically programmed
Vt difference.
Tempco of Threshold Voltage (TCVt )
Temperature Coefficient of the Vt is the change in the Threshold Voltage per degree C change in temperature.
Threshold Voltage (Vt )
Threshold Voltage of an EPAD is the voltage across Gate and Source when 1µA is forced into the Drain terminal as the
Drain and Gate are connected together.
Tempco of VOS (TCVOS)
Temperature Coefficient of Offset Voltage is the change in difference between two EPAD threshold voltages per degree
Centigrade change in temperature when the two devices have the same initial electrically programmed Vt values.
Zero Tempco Current (I ZTC )
The Drain current of an EPAD device at which Temperature Coefficient of the Drain-Gate Connected Voltage, relative to
the Source Voltage, is at zero.
ALD1108E/ALD1110E
Advanced Linear Devices
10