ADPOW APTGT300A120 Phase leg fast trench field stop igbt power module Datasheet

APTGT300A120
Phase leg
Fast Trench + Field Stop IGBT®
Power Module
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
VBUS
Q1
G1
E1
OUT
Q2
G2
E2
0/VBUS
VBUS
0/VBUS
Features
• Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
OUT
E1
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
G2
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
1200
420
300
600
±20
1380
Tj = 125°C
600A @ 1100V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
V
W
May, 2005
E2
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
APTGT300A120 – Rev 0
G1
VCES = 1200V
IC = 300A @ Tc = 80°C
APTGT300A120
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Turn-on Delay Time
Rise Time
Td(off)
Tf
Eon
Eoff
Turn-off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Reverse diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE =15V
IC = 300A
Tj = 125°C
VGE = VCE , IC = 4 mA
VGE = 20V, VCE = 0V
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
1.4
5.0
Min
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 300A
R G = 1.8Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 300A
R G = 1.8Ω
Test Conditions
Maximum Reverse Leakage Current
VR=1200V
IF(A V)
Maximum Average Forward Current
50% duty cycle
VF
Diode Forward Voltage
IF = 300A
VGE = 0V
trr
Reverse Recovery Time
IF = 300A
VR = 600V
Qrr
Reverse Recovery Charge
di/dt =3000A/µs
1.7
2.0
5.8
Typ
21
1.2
0.9
260
30
420
Max
Unit
1
2.1
mA
6.5
600
V
nA
Max
Unit
V
nF
ns
70
290
50
ns
520
90
30
30
Min
1200
Typ
Tj = 25°C
Tj = 125°C
Tc = 80°C
Tj = 25°C
Tj = 125°C
300
1.6
1.6
Tj = 25°C
170
Tj = 125°C
Tj = 25°C
Tj = 125°C
280
27
54
mJ
Max
500
750
Unit
V
µA
A
2.1
V
ns
µC
May, 2005
IRM
Typ
APT website – http://www.advancedpower.com
2-5
APTGT300A120 – Rev 0
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Min
APTGT300A120
Thermal and package characteristics
Symbol Characteristic
Min
IGBT
Diode
RthJC
Junction to Case
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.09
0.17
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
APT website – http://www.advancedpower.com
3-5
APTGT300A120 – Rev 0
May, 2005
Package outline (dimensions in mm)
APTGT300A120
Typical Performance Curve
Output Characteristics (VGE =15V)
600
V GE=17V
TJ=125°C
300
VGE=15V
300
200
200
100
100
VGE =9V
0
0
1
2
VCE (V)
3
4
0
Transfert Characteristics
600
1
50
TJ=125°C
E (mJ)
300
TJ=125°C
4
Eon
Eoff
Er
37.5
Eon
25
200
3
VCE = 600V
VGE = 15V
RG = 1.8Ω
T J = 125°C
62.5
400
2
VCE (V)
Energy losses vs Collector Current
75
TJ=25°C
500
12.5
100
0
0
5
6
7
8
9
V GE (V)
10
11
0
12
100
200
300
400
500
600
IC (A)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
70
700
VCE = 600V
VGE =15V
IC = 300A
T J = 125°C
60
50
Eon
600
500
Eoff
40
30
IC (A)
E (mJ)
VGE =13V
400
400
0
IC (A)
T J = 125°C
500
TJ=25°C
IC (A)
IC (A)
500
Output Characteristics
600
Er
400
300
20
200
10
100
0
VGE =15V
T J=125°C
RG=1.8 Ω
0
0
2
4
6
8
10
Gate Resistance (ohms)
12
0
300
600
900
VCE (V)
1200
1500
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.08
0.9
IGBT
0.7
0.06
0.3
0.02
0.1
0.05
0
0.00001
May, 2005
0.5
0.04
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
APT website – http://www.advancedpower.com
4-5
APTGT300A120 – Rev 0
Thermal Impedance (°C/W)
0.1
APTGT300A120
Forward Characteristic of diode
600
50
ZCS
40
ZVS
VCE=600V
D=50%
RG=1.8Ω
TJ=125°C
Tc=75°C
TJ=25°C
500
400
IC (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
60
30
TJ=125°C
300
200
20
Hard
switching
10
TJ =125°C
100
TJ =25°C
0
0
0
50
0
100 150 200 250 300 350 400
IC (A)
0.4
0.8
1.2
1.6
VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Thermal Impedance (°C/W)
0.2
0.16
0.12
0.9
Diode
0.7
0.5
0.08
0.04
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
APTGT300A120 – Rev 0
May, 2005
rectangular Pulse Duration (Seconds)
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