Weitron BAW567DW Surface mount switching multi-chip Datasheet

BAV70DW
BAV99DW
BAV756DW BAW567DW
BAV99BRW BAW56DW
Surface Mount Switching Multi-Chip
Diode Array
MULTI-CHIP DIODES
150m AMPERES
P b Lead(Pb)-Free
75 VOLTS
Features:
* For General Purpose Switching Applications
* Fast Switching Speed
* High Conductance
* Easily Connected As Full Wave Bridge
6 5
1
2
4
3
SOT-363
Mechanical Data:
* Case : SOT-363
* Case Material : Molded Plastic. UL Flammability
Classification Ration 94V-0
* Moisture Sensitivity : Level 1 per J-STD-020C
* Terminals : Solderable per MIL-STD-202, Method 208
* Polarity : See Diagram
* Weight : 0.006 grams(appro)
SOT-363 Outline Dimensions
Unit:mm
A
6
5
SOT-363
4
B C
1
2
D
3
E
H
K
J
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L
M
1/3
Dim
A
B
C
D
E
H
J
K
L
M
Min
Max
0.10
0.30
1.15
1.35
2.00
2.20
0.65 REF
0.30
0.40
1.80
2.20
0.10
0.80
1.10
0.25
0.40
0.10
0.25
Rev.A 11-Aug-09
BAV70DW
BAV99DW
BAV756DW BAW567DW
BAV99BRW BAW56DW
Maximum Ratings (TA=25°C Unless otherwise noted)
Characteristic
Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
VRM
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRM
VR
75
V
VR(RSM)
53
V
IO
150
mA
IFSM
2.0
1.0
A
PD
200
mW
RθJA
625
°C/W
Tj,Tstg
-65 to +150
°C
RMS Reverse Voltage
Average Rectified Output Current(1,3)
Non-Repetitive Forward Current
@t=1.0µs
@t=1.0s
Power Dissipation(1,3)
Thermal Resistance, Junction to Ambient Air(1,3)
Junction & Storage Temperature Range
Electrical Characteristics (TA=25°C Unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V (BR)R
75
-
-
A
Reverse Current(2)
VR=75V
VR=20V
IR
-
-
2.5
25
μA
nA
Forward Voltage(2)
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VF
-
-
Total Capacitance
(VR=0V, f=1.0MHz)
CD
-
-
2.0
pF
Reverse Recover Time
IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω
T rr
-
-
4.0
nS
Reverse Breakdown Voltage(2)
IR=2.5μA
715
855
1000
1250
mA
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout,.
2. Short duration test pulse used to minimize self-heating effect.
3. One or more diodes loaded.
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Rev.A 11-Aug-09
BAV70DW
BAV99DW
BAV756DW BAW567DW
BAV99BRW BAW56DW
Device Marking
Item
Marking
BAV70DW
KJA
BAV756DW
KCA
BAV99BRW
Eqivalent Circuit diagram
1
6
5
5
4
4
1
KGJ
6
5
2
3
4
1
2
3
6
BAV99DW
KJG
KAC
1
2
3
6
BAW567DW
KJC
1
2
3
6
BAW56DW
IR, INSTATANEOUS REVERSE CURRENT (nA)
1
IF, INSTATANEOUS FORWARD CURRENT (A)
6
2
3
Typical Characteristics
TA = 150°C
0.1
TA = 75°C
TA = 25°C
0.01
TA = 0°C
TA = -40°C
0.001
1.0
0.5
1.5
0
VR, INSTANTANEOUS FORWARD VOLTAGE(V)
5
4
5
4
10000
TA = 150°C
TA = 125°C
1000
TA = 75°C
100
TA = 25°C
10
TA = 0°C
1
TA = -40°C
0.1
0
20
40
60
80
100
Fig.2 Typical Reverse Characteristics
250
Pd, POWER DISSIPATION (wW)
2.0
f = 1.0MHz
1.8
1.6
1.4
1.2
1.0
0.8
0.6
5
4
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig.1 Forward Characteristics
CT, TOTAL CAPACITANCE (pF)
1
2
3
0
10
20
30
VR, REVERSE VOLTAGE(V)
40
Fig.3 Typical Capacitance vs. Reverse Voltage
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200
150
100
50
0
0
25
50
75
100
125 150
TA, AMBIENT TEMPERATURE (˚C)
Fig.4 Power Derating Curve
3/3
Rev.A 11-Aug-09
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