AP2302AGN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive D ▼ Lower Gate Charge BVDSS 20V RDS(ON) 42mΩ ID ▼ Surface Mount Package 4.6A S ▼ RoHS Compliant & Halogen-Free SOT-23 G D Description AP2302A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. G S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage +8 V 3 ID@TA=25℃ Drain Current , VGS @ 4.5V 4.6 A ID@TA=70℃ 3 3.7 A 20 A 1.38 W Drain Current , VGS @ 4.5V 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 90 ℃/W 1 201501212 AP2302AGN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 20 - - V VGS=4.5V, ID=4A - - 42 mΩ VGS=2.5V, ID=3A - - 60 mΩ 0.3 - 1.2 V BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=5V, ID=4A - 14 - S IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+8V, VDS=0V - - +100 nA ID=4A - 6.5 10.5 nC 2 VGS=0V, ID=250uA Qg Total Gate Charge Qgs Gate-Source Charge VDS=10V - 1 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 2.5 - nC VDS=10V - 9 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 12 - ns td(off) Turn-off Delay Time RG=3.3Ω - 16 - ns tf Fall Time VGS=5V - 5 - ns Ciss Input Capacitance VGS=0V - 300 480 pF Coss Output Capacitance VDS=20V - 85 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 80 - pF Rg Gate Resistance f=1.0MHz - 2 - Ω Min. Typ. IS=1.2A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=4A, VGS=0V, - 20 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 270℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2302AGN-HF 20 30 o 5.0V 4.5V 3.5V o T A =150 C 2.5V 20 5.0V 4.5V 3.5V 2.5V 16 ID , Drain Current (A) ID , Drain Current (A) T A =25 C V G =2.0V 10 12 V G =2.0V 8 4 0 0 0 1 2 3 4 0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 2 3 4 Fig 2. Typical Output Characteristics 1.8 50 I D =3A T A =25 o C I D =4A V G =4.5V 1.6 Normalized RDS(ON) RDS(ON) (mΩ) 1 V DS , Drain-to-Source Voltage (V) 40 1.4 1.2 1.0 30 0.8 0.6 20 0 1 2 3 4 5 -50 6 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 8 1.6 I D =250uA 1.4 o o T j =150 C IS (A) Normalized VGS(th) 6 T j =25 C 4 1.2 1 0.8 0.6 2 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2302AGN-HF f=1.0MHz 500 I D =4A V DS =10V 400 6 C (pF) VGS , Gate to Source Voltage (V) 8 4 C iss 300 200 2 100 C oss C rss 0 0 0 2 4 6 8 10 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Operation in this area limited by RDS(ON) ID (A) 10 Normalized Thermal Response (Rthja) DUTY=0.5 100us 1 1ms 10ms 0.1 100ms 1s DC T A =25 o C Single Pulse 0.01 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T 0.01 Single Pulse Duty factor = t/T Peak T j = PDM x Rthja + Ta Rthja = 270℃/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP2302AGN-HF MARKING INFORMATION Part Number : M6 M6SS Date Code : SS SS:2004,2008,2012,2016,2020... SS:2003,2007,2011,2015,2019... SS:2002,2006,2010,2014,2018... SS:2001,2005,2009,2013,2017... 5