Preliminary Datasheet BCR10FM-14LJ R07DS0978EJ0100 Rev.1.00 Dec 03, 2012 700V - 10A - Triac Medium Power Use Features Insulated Type Planar Passivation Type Viso: 2000 V IT (RMS) : 10 A VDRM : 800 V (Tj = 125°C) Tj: 150°C IFGTI, IRGTI, IRGT: 30 mA Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications Switching mode power supply, washing machine, motor control, heater control, and other general purpose control applications. Maximum Ratings Parameter Symbol Repetitive peak off-state voltageNote1 VDRM Non-repetitive peak off-state voltageNote1 VDSM Voltage class 14 800 700 840 Parameter RMS on-state current Symbol IT (RMS) Ratings 10 Unit A Surge on-state current ITSM 100 A I2 t 41.6 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 5 0.5 10 2 –40 to +150 –40 to +150 1.9 2000 W W V A C C g V I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Isolation voltage Note5 R07DS0978EJ0100 Rev.1.00 Dec 03, 2012 Unit V Conditions Tj = 125C Tj = 150C V Conditions Commercial frequency, sine full wave 360 conduction, Tc = 103C 60 Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current Typical value Ta = 25C, AC 1 minute T1 T2 G terminal to case Page 1 of 7 BCR10FM-14LJ Preliminary Electrical Characteristics Parameter Symbol Repetitive peak off-state current On-state voltage IDRM VTM Min. — — Rated value Typ. Max. — 2.0 — 1.5 Unit Test conditions mA V Tj = 150C, VDRM applied Tc = 25C, ITM = 15A, instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT — — — — — — 1.5 1.5 1.5 V V V Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger curentNote2 IFGT IRGT IRGT — — — — — — 30 30 30 mA mA mA Tj = 25C, VD = 6 V, RL = 6 , RG = 330 VGD 0.2 0.1 — 10 — — — — — — 4.1 — V V C/W V/s Tj = 125C, VD = 1/2 VDRM Tj = 150C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125C 1 — — V/s Tj = 150C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutation voltage Notes: 1. 2. 3. 4. 5. Rth (j-c) (dv/dt)c Gate open. Measurement using the gate trigger characteristics measurement circuit. The contact themal resistance Rth (c-f) in case of greasing is 0.5C/W. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. Make sure that your finished product containing this device meets your safe isolation requirements. For safety, it's advisable that heatsink is electrically floating. Test conditions 1. Junction temperature Tj = 125/150C 2. Rate of decay of on-state commutating current (di/dt)c = –5A/ms 3. Peak off-state voltage VD = 400 V R07DS0978EJ0100 Rev.1.00 Dec 03, 2012 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 7 BCR10FM-14LJ Preliminary Performance Curves Maximum On-State Characteristics Rated Surge On-State Current Surge On-State Current (A) 100 Tj = 150°C 101 Tj = 25°C 100 0 1 2 3 20 101 102 Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature PGM = 5W 101 PG(AV) = 0.5W IGM = 2A VGT = 1.5V 100 IRGT I VGD = 0.1V IFGT I, IRGT III 102 103 104 103 Typical Example IRGT I, IRGT III 102 IFGT I 101 –40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 Typical Example 102 101 –40 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) 40 Conduction Time (Cycles at 60Hz) 101 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 60 On-State Voltage (V) VGM = 10V 10−1 80 0 100 4 0 40 80 120 Junction Temperature (°C) R07DS0978EJ0100 Rev.1.00 Dec 03, 2012 160 Transient Thermal Impedance (°C/W) On-State Current (A) 102 102 5 103 104 100 101 4 3 2 1 0 10−1 102 Conduction Time (Cycles at 60Hz) Page 3 of 7 BCR10FM-14LJ Preliminary 101 100 10−1 1 10 102 12 10 8 6 4 0 105 360° Conduction Resistive, inductive loads 2 0 2 4 6 8 10 12 14 16 RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current Curves apply regardless of conduction angle 140 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 2 4 6 8 10 12 14 160 16 All fins are black painted aluminum and greased 140 120 120 120 t2.3 100 100 100 t2.3 80 60 60 t2.3 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 0 2 4 6 8 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 160 Ambient Temperature (°C) 104 14 Conduction Time (Cycles at 60Hz) 160 Case Temperature (°C) 103 16 On-State Power Dissipation (W) 10 2 No Fins Maximum On-State Power Dissipation Ambient Temperature (°C) 10 3 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 RMS On-State Current (A) R07DS0978EJ0100 Rev.1.00 Dec 03, 2012 3.0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 106 Typical Example 105 104 103 102 –40 0 40 80 120 160 Junction Temperature (°C) Page 4 of 7 BCR10FM-14LJ Preliminary 103 Latching Current vs. Junction Temperature Latching Current (mA) 102 0 40 T2+, G– Typical Example 102 101 80 120 100 –40 160 0 40 80 120 160 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 125°C) 160 Typical Example 140 120 100 80 60 40 20 0 −40 Distribution T2+, G+ Typical Example T2–, G– 0 40 80 120 160 Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) 101 −40 103 Typical Example 160 Typical Example Tj = 125°C 140 120 III Quadrant 100 80 60 I Quadrant 40 20 0 101 102 103 104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/μs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 150°C) Commutation Characteristics (Tj = 125°C) 160 102 Typical Example Tj = 150°C 140 120 III Quadrant 100 80 60 I Quadrant 40 20 0 101 102 103 104 Rate of Rise of Off-State Voltage (V/μs) R07DS0978EJ0100 Rev.1.00 Dec 03, 2012 Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Holding Current vs. Junction Temperature Typical Example Tj = 125°C, IT = 4A, τ = 500μs VD = 200V, f = 3Hz Minimum Characteristics Value 101 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 100 100 III Quadrant I Quadrant 101 102 Rate of Decay of On-State Commutating Current (A/ms) Page 5 of 7 BCR10FM-14LJ Preliminary Gate Trigger Current vs. Gate Current Pulse Width Critical Rate of Rise of Off-State Commutating Voltage (V/μs) 102 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Commutation Characteristics (Tj = 150°C) Typical Example Tj = 150°C IT = 4A τ = 500μs VD = 200V f = 3Hz III Quadrant I Quadrant Minimum Characteristics Value 100 100 101 102 103 Typical Example IRGT I IRGT III 102 IFGT I 101 0 10 101 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (μs) Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Triac 6Ω 6Ω Load C1 A 6V V V Test Procedure II Test Procedure I R1 A 6V 330Ω 330Ω C0 C1 = 0.1 to 0.47μF R1 = 47 to 100Ω R0 C0 = 0.1μF R0 = 100Ω 6Ω A 6V V 330Ω Test Procedure III R07DS0978EJ0100 Rev.1.00 Dec 03, 2012 Page 6 of 7 BCR10FM-14LJ Preliminary Package Dimensions Package Name TO-220FP JEITA Package Code RENESAS Code PRSS0003AG-A Previous Code MASS[Typ.] 1.9g Unit: mm 10.16 ± 0.20 2.54 ± 0.20 6.68 ± 0.20 3.3 ± 0.2 1.28 ± 0.30 3.18 ± 0.20 12.98 ± 0.30 15.87 ± 0.20 3.18 ± 0.10 Max 1.47 2.76 ± 0.20 0.80 ± 0.20 0.50 4.7 ± 0.2 5.08 ± 0.20 Ordering Information Orderable Part Number Packing Quantity Remark BCR10FM-14LJ#BB0 Tube 50 pcs. Straight type BCR10FM-14LJA8#BB0 Tube 50 pcs. A8 Lead Form Note: Please confirm the specification about the shipping in detail. R07DS0978EJ0100 Rev.1.00 Dec 03, 2012 Page 7 of 7 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. 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