Renesas BCR10FM-14LJBB0 700v - 10a - triac medium power use Datasheet

Preliminary Datasheet
BCR10FM-14LJ
R07DS0978EJ0100
Rev.1.00
Dec 03, 2012
700V - 10A - Triac
Medium Power Use
Features




 Insulated Type
 Planar Passivation Type
 Viso: 2000 V
IT (RMS) : 10 A
VDRM : 800 V (Tj = 125°C)
Tj: 150°C
IFGTI, IRGTI, IRGT: 30 mA
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Switching mode power supply, washing machine, motor control, heater control, and other general purpose control
applications.
Maximum Ratings
Parameter
Symbol
Repetitive peak off-state voltageNote1
VDRM
Non-repetitive peak off-state voltageNote1
VDSM
Voltage class
14
800
700
840
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
10
Unit
A
Surge on-state current
ITSM
100
A
I2 t
41.6
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
–40 to +150
–40 to +150
1.9
2000
W
W
V
A
C
C
g
V
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage Note5
R07DS0978EJ0100 Rev.1.00
Dec 03, 2012
Unit
V
Conditions
Tj = 125C
Tj = 150C
V
Conditions
Commercial frequency, sine full wave
360 conduction, Tc = 103C
60 Hz sinewave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute
T1  T2  G terminal to case
Page 1 of 7
BCR10FM-14LJ
Preliminary
Electrical Characteristics
Parameter
Symbol
Repetitive peak off-state current
On-state voltage
IDRM
VTM
Min.
—
—
Rated value
Typ.
Max.
—
2.0
—
1.5
Unit
Test conditions
mA
V
Tj = 150C, VDRM applied
Tc = 25C, ITM = 15A,
instantaneous measurement
Gate trigger voltageNote2



VFGT
VRGT
VRGT
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
Gate trigger curentNote2



IFGT
IRGT
IRGT
—
—
—
—
—
—
30
30
30
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
VGD
0.2
0.1
—
10
—
—
—
—
—
—
4.1
—
V
V
C/W
V/s
Tj = 125C, VD = 1/2 VDRM
Tj = 150C, VD = 1/2 VDRM
Junction to caseNote3
Tj = 125C
1
—
—
V/s
Tj = 150C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutation voltage
Notes: 1.
2.
3.
4.
5.
Rth (j-c)
(dv/dt)c
Gate open.
Measurement using the gate trigger characteristics measurement circuit.
The contact themal resistance Rth (c-f) in case of greasing is 0.5C/W.
Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
1. Junction temperature
Tj = 125/150C
2. Rate of decay of on-state commutating current
(di/dt)c = –5A/ms
3. Peak off-state voltage
VD = 400 V
R07DS0978EJ0100 Rev.1.00
Dec 03, 2012
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 7
BCR10FM-14LJ
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
Surge On-State Current (A)
100
Tj = 150°C
101
Tj = 25°C
100
0
1
2
3
20
101
102
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
PGM = 5W
101
PG(AV) =
0.5W
IGM = 2A
VGT = 1.5V
100
IRGT I
VGD = 0.1V
IFGT I, IRGT III
102
103
104
103
Typical Example
IRGT I, IRGT III
102
IFGT I
101
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
Typical Example
102
101
–40
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
40
Conduction Time (Cycles at 60Hz)
101
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
60
On-State Voltage (V)
VGM = 10V
10−1
80
0
100
4
0
40
80
120
Junction Temperature (°C)
R07DS0978EJ0100 Rev.1.00
Dec 03, 2012
160
Transient Thermal Impedance (°C/W)
On-State Current (A)
102
102
5
103
104
100
101
4
3
2
1
0
10−1
102
Conduction Time (Cycles at 60Hz)
Page 3 of 7
BCR10FM-14LJ
Preliminary
101
100
10−1 1
10
102
12
10
8
6
4
0
105
360° Conduction
Resistive,
inductive loads
2
0
2
4
6
8
10
12
14
16
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
Curves apply regardless
of conduction angle
140
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
2
4
6
8
10
12
14
160
16
All fins are black painted
aluminum and greased
140
120
120 120 t2.3
100
100 100 t2.3
80
60 60 t2.3
60 Curves apply
regardless of
40 conduction angle
Resistive,
20 inductive loads
Natural convection
0
0
2
4
6
8
10
12
14
16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
160
Ambient Temperature (°C)
104
14
Conduction Time (Cycles at 60Hz)
160
Case Temperature (°C)
103
16
On-State Power Dissipation (W)
10
2
No Fins
Maximum On-State Power Dissipation
Ambient Temperature (°C)
10
3
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
RMS On-State Current (A)
R07DS0978EJ0100 Rev.1.00
Dec 03, 2012
3.0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
106
Typical Example
105
104
103
102
–40
0
40
80
120
160
Junction Temperature (°C)
Page 4 of 7
BCR10FM-14LJ
Preliminary
103
Latching Current vs.
Junction Temperature
Latching Current (mA)
102
0
40
T2+, G–
Typical Example
102
101
80
120
100
–40
160
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 125°C)
160
Typical Example
140
120
100
80
60
40
20
0
−40
Distribution
T2+, G+
Typical Example
T2–, G–
0
40
80
120
160
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
101
−40
103
Typical Example
160
Typical Example
Tj = 125°C
140
120
III Quadrant
100
80
60
I Quadrant
40
20
0
101
102
103
104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 150°C)
Commutation Characteristics (Tj = 125°C)
160
102
Typical Example
Tj = 150°C
140
120
III Quadrant
100
80
60
I Quadrant
40
20
0
101
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
R07DS0978EJ0100 Rev.1.00
Dec 03, 2012
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Holding Current vs.
Junction Temperature
Typical Example
Tj = 125°C, IT = 4A, τ = 500μs
VD = 200V, f = 3Hz
Minimum
Characteristics
Value
101
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
100
100
III Quadrant
I Quadrant
101
102
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 7
BCR10FM-14LJ
Preliminary
Gate Trigger Current vs.
Gate Current Pulse Width
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
102
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Commutation Characteristics (Tj = 150°C)
Typical Example
Tj = 150°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
III Quadrant
I Quadrant
Minimum
Characteristics
Value
100
100
101
102
103
Typical Example
IRGT I
IRGT III
102
IFGT I
101 0
10
101
102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
Recommended Circuit Values Around The Triac
6Ω
6Ω
Load
C1
A
6V
V
V
Test Procedure II
Test Procedure I
R1
A
6V
330Ω
330Ω
C0
C1 = 0.1 to 0.47μF
R1 = 47 to 100Ω
R0
C0 = 0.1μF
R0 = 100Ω
6Ω
A
6V
V
330Ω
Test Procedure III
R07DS0978EJ0100 Rev.1.00
Dec 03, 2012
Page 6 of 7
BCR10FM-14LJ
Preliminary
Package Dimensions
Package Name
TO-220FP
JEITA Package Code

RENESAS Code
PRSS0003AG-A
Previous Code

MASS[Typ.]
1.9g
Unit: mm
10.16 ± 0.20
2.54 ± 0.20
6.68 ± 0.20
3.3 ± 0.2
1.28 ± 0.30
3.18 ± 0.20
12.98 ± 0.30
15.87 ± 0.20
3.18 ± 0.10
Max 1.47
2.76 ± 0.20
0.80 ± 0.20
0.50
4.7 ± 0.2
5.08 ± 0.20
Ordering Information
Orderable Part Number
Packing
Quantity
Remark
BCR10FM-14LJ#BB0
Tube
50 pcs.
Straight type
BCR10FM-14LJA8#BB0
Tube
50 pcs.
A8 Lead Form
Note:
Please confirm the specification about the shipping in detail.
R07DS0978EJ0100 Rev.1.00
Dec 03, 2012
Page 7 of 7
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