EIC BAW75 High speed switching diode Datasheet

BAW75 ~ BAW76
HIGH SPEED SWITCHING DIODES
DO - 35 Glass
(DO-204AH)
FEATURES :
• High switching speed: max. 4 ns
• Reverse voltage:max. 25V , 50V
• Peak reverse voltage:max. 35V, 75 V
• Pb / RoHS Free
1.00 (25.4)
min.
0.079(2.0 )max.
0.150 (3.8)
max.
Cathode
Mark
1.00 (25.4)
min.
0.020 (0.52)max.
MECHANICAL DATA :
Case: DO-35 Glass Case
Weight: approx. 0.13g
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at
25 °C ambient temperature unless otherwise specified.)
Parameter
Symbol
BAW75
Maximum Peak Reverse Voltage
BAW76
BAW75
Maximum Reverse Voltage
BAW76
Maximum Average Forward Current
Value
25
VRM
V
50
35
VRM
V
75
IF(AV)
Half Wave Recitication with Resistive Load , f ≥ 50Hz
Unit
150 (1)
mA
(1)
mW
Maximum Power Dissipation
PD
Maximum Surge Forward Current at t < 1µs , Tj = 25 °C
IFSM
2
A
Maximum Junction Temperature
TJ
200
°C
Storage Temperature Range
TS
-65 to + 200
°C
500
Note : (1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Reverse Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
Page 1 of 2
Symbol
BAW75
BAW76
BAW75
BAW76
BAW75
BAW76
BAW75
BAW76
IR
VF
V(BR)R
Test Condition
VR = 25 V
VR = 50 V
IF = 30 mA
IF = 100 mA
Test with 5µA pulses
Cd
f = 1MHz ; VR = 0
Trr
IF = 10 mA , IR = 10 mA
Irr = 1mA
Min
Typ
Max
35
75
-
-
100
100
1.0
1.0
4.0
2.0
-
-
4
Unit
nA
V
V
pF
ns
Rev. 02 : March 25, 2005
RATING AND CHARACTERISTIC CURVES ( BAW75 ~ BAW76 )
FIG. 1 ADMISSIBLE POWER DISSIPATION
VERSUS AMBIENT TEMPERATURE
FIG. 2 TYPICAL FORWARD VOLTAGE
1000
400
Forward Current , IF (mA)
POWER DISSIPATION, PD (mW)
500
300
200
100
10
TJ = 25°C
1
100
0
0.1
0
100
200
0
0.4
0.8
1.2
1.4
1.6
Forward Voltage , VF (V)
Ambient Temperature , Ta (°C)
FIG. 3 TYPICAL DIODE CAPACITANCE AS
A FUNCTION OF REVERSE VOLTAGE
FIG. 4 TYPICAL REVERESE CURRENT
VERSUS JUNCTION TEMPERATURE
105
1.2
Reverse Current , IR (nA)
Diode Capacitance , Cd (pF)
1.0
0.9
0.8
0.7
f = 1MHz;
TJ = 25°C
0.6
103
102
10
0.5
1
0.4
0
10
Reverse Voltage , VR (V)
Page 2 of 2
104
20
0
100
200
Junction Temperature , Ta (°C)
Rev. 02 : March 25, 2005
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