SEMICONDUCTOR BAT54 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE For high speed Switching. E B L L FEATURES ·Low Leakage Current. D ·Low Forward Voltage. H 1 Q MAXIMUM RATING (Ta=25℃) UNIT Reverse Voltage VR 30 V Average Forward Current IO 0.2 A P K J RATING N P SYMBOL C CHARACTERISTIC 3 G A 2 DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 3 Non-repetitive Peak Forward Surge Current (t<1.0s) IFSM Repetitive Peak Forward Current IFRM 0.3 A Power Dissipation PD 0.2 W Junction Temperature Tj 125 ℃ Storage Temperature Tstg -55～150 ℃ 0.6 1. NC A 2. ANODE 3. CATHODE 2 1 SOT-23 Marking Lot No. Type Name L4 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IF=1.0mA - - 0.32 V IF=10mA - - 0.40 V IF=30mA - - 0.50 V IF=100mA - - 0.80 V VF Forward Voltage Reverse Current IR VR=25V - - 2 μA Total Capacitance CT VR=1V, f=1MHz - - 10 pF Reverse Recovery Time trr IR=IF=10mA - - 5 ns 2009. 1. 16 Revision No : 0 1/1