Chenmko CHN222M1PT Switching diode Datasheet

CHENMKO ENTERPRISE CO.,LTD
CHN222M1PT
SURFACE MOUNT
SWITCHING DIODE
VOLTAGE 80 Volts CURRENT 0.1 Ampere
APPLICATION
* Ultra high speed switching
FBPT-723
FEATURE
* Small surface mounting type. (FBPT-723)
0.5±0.05
* High speed. (TRR=1.5nSec Typ.)
* Suitable for high packing density.
1.2±0.05
* Maximum total power disspation is 150mW.
* Peak forward current is 300mA.
1.2±0.05
CONSTRUCTION
* Silicon epitaxial planar
0.05±0.04
0.84±0.05
0.32±0.05
MARKING
0.15(REF.)
* 22
0.47(REF.)
(2)
CIRCUIT
(1)
(3)
(2)
0.28±0.05
0.22±0.05
(3)
Dimensions in millimeters
(1)
0.23(REF.)
0.25±0.05
FBPT-723
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
SYMBOL
CHN222M1PT
UNITS
Maximum Recurrent Peak Reverse Voltage
RATINGS
VRRM
80
Volts
Maximum RMS Voltage
VRMS
56
Volts
Maximum DC Blocking Voltage
VDC
80
Volts
IO
0.1
Amps
Maximum Average Forward Rectified Current
Peak Forward Surge Current at 1uSec.
IFSM
4.0
Amps
Typical Junction Capacitance between Terminal (Note 1)
CJ
3.5
pF
Maximum Reverse Recovery Time (Note 2)
TRR
4.0
nSec
TJ
+150
o
C
-55 to +150
o
C
Maximum Operating Temperature Range
Storage Temperature Range
TSTG
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
CHN222M1PT
UNITS
Maximum Instantaneous Forward Voltage at IF= 100mA
VF
1.20
Volts
Maximum Average Reverse Current at VR= 70V
IR
0.1
uAmps
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 6.0 volts.
2. Measured at applied froward current of 5mA and reverse voltage of 6.0 volts.
3. ESD sensitive product handling required.
2004-6
FIG. 1 - TYPICAL FORWARD CURRENT
DERAING CURVE
125
FIG. 2 - FORWARD CHARACTERISTICS
50
FORWARD CURRENT, (mA)
AVERAGE FORWARD CURRENT, (%)
RATING CHARACTERISTIC CURVES ( CHN222M1PT )
100
75
50
25
0
20
10
5
Ta=85oC
50oC
25oC
0oC
o
- 30 C
2
1
0.5
0.2
0.1
25
0
50
75
100
125
150
0
0.2
o
0.4
0.6
0.8
1.0
1.4
1.2
AMBIENT TEMPERATURE, ( C)
FORWARD VOLTAGE, (V)
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
FIG. 4 - REVERSE CHARACTERISTICS
1.6
REVERSE CURRENT, (nA)
JUNCTION CAPACITANCE, (pF)
Ta=100oC
f=1MHz
4
2
75oC
100
50oC
10
25oC
1
0oC
-
0.01
0
0
2
4
6
8
10
12
14
16
18
20
20
0
REVERSE VOLTAGE, (V)
30
40
50
60
70
REVERSE VOLTAGE, (V)
FIG. 5 - REVERSE RECOVERY TIME
FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT
10
REVERSE RECOVERY TIME, (nS)
25oC
0.1
0.01µF
9
D.U.T.
VR=6V
8
5
7
PULSE GENERATOR
OUTPUT 50
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
FORWARD CURRENT, (mA)
8
9
10
50
SAMPLING
OSCILLOSCOPE
80
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