AP4957GM
Pb Free Plating Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-Resistance
D2
D2
▼ Simple Drive Requirement
D1
D1
▼ Dual P MOSFET Package
BVDSS
-30V
RDS(ON)
24mΩ
ID
-7.7A
G2
S2
SO-8
S1
G1
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D2
D1
G2
G1
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
-30
V
±20
V
3
-7.7
A
3
-6.1
A
-30
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
200420041
AP4957GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-30
-
-
V
-
-0.02
-
V/℃
VGS=-10V, ID=-7A
-
20
24
mΩ
VGS=-4.5V, ID=-5A
-
30
36
mΩ
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-7A
-
12
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=-7A
-
27
45
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance
o
IGSS
2
VGS=0V, ID=-250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
18
-
nC
VDS=-15V
-
14
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
38
-
ns
tf
Fall Time
RD=15Ω
-
25
-
ns
Ciss
Input Capacitance
VGS=0V
-
1670 2670
pF
Coss
Output Capacitance
VDS=-25V
-
530
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
435
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3
4.5
Ω
Min.
Typ.
IS=-1.7A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-7A, VGS=0V,
-
35
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
34
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 ℃/W when mounted on Min. copper pad.
AP4957GM
120
120
-10V
o
-10V
100
-ID , Drain Current (A)
-ID , Drain Current (A)
o
T A = 150 C
T A = 25 C
100
-7.0V
80
60
-5.0V
-4.5V
40
20
80
-7.0V
60
40
-5.0V
-4.5V
20
V G =-3.0V
V G =-3.0V
0
0
0
1
2
3
4
5
6
7
8
0
1
3
4
5
6
7
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
48
1.6
ID=-5A
T A =25 ℃
ID=-7A
V G =-10V
1.4
Normalized R DS(ON)
40
RDS(ON) (mΩ )
2
-V DS , Drain-to-Source Voltage (V)
32
1.2
1.0
24
0.8
0.6
16
3
5
7
9
-50
11
0
50
100
150
o
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
7
2.0
6
1.5
Normalized -VGS(th) (V)
-IS(A)
5
4
T j =150 o C
T j =25 o C
3
2
1.0
0.5
1
0.0
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4957GM
-VGS , Gate to Source Voltage (V)
12
f=1.0MHz
10000
ID= -7A
V DS = - 24 V
10
8
C (pF)
C iss
6
1000
C oss
4
C rss
2
0
100
0
10
20
30
40
50
60
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
-ID (A)
1ms
10ms
1
100ms
0.1
1s
T A =25 o C
Single Pulse
DC
0.01
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
VG
-ID , Drain Current (A)
V DS =-5V
T j =25 o C
30
T j =150 o C
QG
-4.5V
QGS
20
QGD
10
Charge
0
0
2
4
6
8
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Q