AP9922AGEO-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance G2 S2 S2 D2 ▼ Capable of 1.8V Gate Drive BVDSS 20V RDS(ON) 18mΩ G1 S1 ▼ Optimal DC/DC Battery Application TSSOP-8 D1 S1 ID 6A ▼ Halogen Free & RoHS Compliant Product Description D1 AP9922A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 20 V +8 V Continuous Drain Current 3 6 A Continuous Drain Current 3 4.8 A 20 A 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter 3 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Unit 125 ℃/W 1 201301081 AP9922AGEO-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. 20 - - V VGS=4.5V, ID=6A - 13.4 18 mΩ VGS=2.5V, ID=4A - 15.5 21 mΩ VGS=1.8V, ID=2A - 18.6 28 mΩ 0.3 0.5 1 V VGS=0V, ID=250uA 2 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA Max. Units gfs Forward Transconductance VDS=5V, ID=6A - 28 - S IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+8V, VDS=0V - - +30 uA Qg Total Gate Charge ID=6A - 16 26 nC Qgs Gate-Source Charge VDS=10V - 1.6 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4.3 - nC td(on) Turn-on Delay Time VDS=10V - 7 - ns tr Rise Time ID=1A - 11 - ns td(off) Turn-off Delay Time RG=3.3Ω - 31 - ns tf Fall Time VGS=5V - 6 - ns Ciss Input Capacitance VGS=0V - 1070 1710 pF Coss Output Capacitance VDS=10V - 130 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 115 - pF Rg Gate Resistance f=1.0MHz - 1.4 2.8 Ω Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=1.2A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=6A, VGS=0V, - 14 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 4 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9922AGEO-HF 20 24 5.0V 4.5V 3.5V 2.5V V G =1.8V ID , Drain Current (A) 20 16 5.0V 4.5V 3.5V 2.5V V G =1.8V o T A = 150 C 16 ID , Drain Current (A) T A =25 o C 12 8 12 8 4 4 0 0 0 1 1 2 2 3 0 1 V DS , Drain-to-Source Voltage (V) 3 4 5 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 20 ID=6A V G = 4.5 V ID=2A T A =25 ℃ 1.4 Normalized RDS(ON) RDS(ON) (mΩ) 2 18 1.2 1.0 16 0.8 0.6 14 1 2 3 4 -50 5 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 6 I D =250uA 1.5 T j =150 o C VGS(th) IS(A) 4 T j =25 o C 1.0 2 0.5 0 0.0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9922AGEO-HF f=1.0MHz 6 1250 ID=6A V DS = 10 V 1050 4 C iss 850 C (pF) VGS , Gate to Source Voltage (V) 5 3 650 2 450 1 250 0 C rss C oss 50 0 4 8 12 16 20 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 10 Normalized Thermal Response (Rthja) 100 100us ID (A) Operation in this area limited by RDS(ON) 1ms 1 10ms 100ms 0.1 1s T A =25 o C Single Pulse DC Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=208℃/W 0.001 0.01 0.01 0.1 1 10 0.0001 100 0.001 0.01 V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 8 V DS =5V T j =25 o C 30 ID , Drain Current (A) ID , Drain Current (A) T j =-40 o C o T j =150 C 20 10 6 4 2 0 0 0 1 2 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics 3 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) Fig 12. Maximum Continuous Drain Current v.s. Ambient Temperature 4