BZV55 series Voltage regulator diodes Rev. 5 — 26 January 2011 Product data sheet 1. Product profile 1.1 General description Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 2 % (BZV55-B) and approximately 5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. 1.2 Features and benefits Non-repetitive peak reverse power dissipation: 40 W Total power dissipation: 500 mW Two tolerance series: 2 % and 5 % Wide working voltage range: nominal 2.4 V to 75 V (E24 range) Low differential resistance Small hermetically sealed glass SMD package 1.3 Applications General regulation functions 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VF forward voltage IF = 10 mA PZSM [1] [1] non-repetitive peak reverse power dissipation Min Typ Max Unit - - 0.9 V - - 40 W tp = 100 s; square wave; Tj = 25 C prior to surge 2. Pinning information Table 2. Pin Pinning Description 1 cathode 2 anode Simplified outline Graphic symbol [1] k a 1 2 006aaa152 [1] The marking band indicates the cathode. BZV55 series NXP Semiconductors Voltage regulator diodes 3. Ordering information Table 3. Ordering information Type number Package BZV55-B2V4 to BZV55-C75[1] [1] Name Description Version - hermetically sealed glass surface-mounted package; 2 connectors SOD80C The series consists of 74 types with nominal working voltages from 2.4 V to 75 V. 4. Marking Table 4. Marking codes Type number Marking code BZV55-B2V4 to BZV55-C75 marking band 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions IF forward current Min Max Unit mA - 250 - see Table 8 and 9 IZSM non-repetitive peak reverse current [1] PZSM non-repetitive peak reverse power dissipation [1] - 40 W Ptot total power dissipation Tamb 50 C [2] - 400 mW Ttp 50 C [2] - 500 mW Tstg storage temperature 65 +200 C Tj junction temperature 65 +200 C [1] tp = 100 s; square wave; Tj = 25 C prior to surge [2] Device mounted on a ceramic substrate of 10 10 0.6 mm. 6. Thermal characteristics Table 6. Symbol Product data sheet Parameter Conditions Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) thermal resistance from junction to solder point [1] BZV55_SER Thermal characteristics in free air [1] Min Typ Max Unit - - 380 K/W - - 300 K/W Device mounted on a ceramic substrate of 10 10 0.6 mm. All information provided in this document is subject to legal disclaimers. Rev. 5 — 26 January 2011 © NXP B.V. 2011. All rights reserved. 2 of 13 BZV55 series NXP Semiconductors Voltage regulator diodes 006aab072 103 Zth(j-a) (K/W) δ=1 0.75 0.50 0.33 102 0.20 0.10 0.05 10 0.02 0.01 ≤ 0.001 1 10−1 1 102 10 103 104 105 tp (ms) Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Tj = 25 C unless otherwise specified. BZV55_SER Product data sheet Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 10 mA - - 0.9 V IR reverse current BZV55-B/C2V4 VR = 1 V - - 50 A BZV55-B/C2V7 VR = 1 V - - 20 A BZV55-B/C3V0 VR = 1 V - - 10 A BZV55-B/C3V3 VR = 1 V - - 5 A BZV55-B/C3V6 VR = 1 V - - 5 A BZV55-B/C3V9 VR = 1 V - - 3 A BZV55-B/C4V3 VR = 1 V - - 3 A BZV55-B/C4V7 VR = 2 V - - 3 A BZV55-B/C5V1 VR = 2 V - - 2 A BZV55-B/C5V6 VR = 2 V - - 1 A BZV55-B/C6V2 VR = 4 V - - 3 A BZV55-B/C6V8 VR = 4 V - - 2 A BZV55-B/C7V5 VR = 5 V - - 1 A BZV55-B/C8V2 VR = 5 V - - 700 nA BZV55-B/C9V1 VR = 6 V - - 500 nA BZV55-B/C10 VR = 7 V - - 200 nA BZV55-B/C11 VR = 8 V - - 100 nA BZV55-B/C12 VR = 8 V - - 100 nA BZV55-B/C13 VR = 8 V - - 100 nA BZV55-B/C15 to BZV55-B/C75 VR = 0.7VZ(nom) - - 50 nA All information provided in this document is subject to legal disclaimers. Rev. 5 — 26 January 2011 © NXP B.V. 2011. All rights reserved. 3 of 13 BZV55 series NXP Semiconductors Voltage regulator diodes Table 8. Characteristics per type; BZV55-B2V4 to BZV55-C24 Tj = 25 C unless otherwise specified. BZV55xxx 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 Sel Working voltage VZ (V) Differential resistance rdif () Temperature coefficient SZ (mV/K) IZ = 5 mA IZ = 1 mA IZ = 5 mA IZ = 5 mA Min Max Typ Max Typ Max Min Typ B 2.35 2.45 275 600 70 100 3.5 C 2.2 2.6 B 2.65 2.75 300 600 75 100 C 2.5 2.9 B 2.94 3.06 325 600 80 C 2.8 3.2 B 3.23 3.37 350 600 C 3.1 3.5 B 3.53 3.67 375 C 3.4 3.8 B 3.82 3.98 C 3.7 4.1 B 4.21 4.39 C 4.0 4.6 B 4.61 4.79 C 4.4 5.0 B 5.0 5.2 C 4.8 5.4 B 5.49 5.71 C 5.2 6.0 B 6.08 6.32 C 5.8 6.6 B 6.66 6.94 C 6.4 7.2 B 7.35 7.65 C 7.0 7.9 B 8.04 8.36 C 7.7 8.7 B 8.92 9.28 C 8.5 9.6 B 9.8 10.2 C 9.4 10.6 B 10.8 11.2 C 10.4 11.6 B 11.8 12.2 C 11.4 12.7 BZV55_SER Product data sheet Diode capacitance Cd (pF)[1] Non-repetitive peak reverse current IZSM (A)[2] Max Max Max 1.6 0 450 6.0 3.5 2.0 0 450 6.0 95 3.5 2.1 0 450 6.0 85 95 3.5 2.4 0 450 6.0 600 85 90 3.5 2.4 0 450 6.0 400 600 85 90 3.5 2.5 0 450 6.0 410 600 80 90 3.5 2.5 0 450 6.0 425 500 50 80 3.5 1.4 0.2 300 6.0 400 480 40 60 2.7 0.8 1.2 300 6.0 80 400 15 40 2.0 1.2 2.5 300 6.0 40 150 6 10 0.4 2.3 3.7 200 6.0 30 80 6 15 1.2 3.0 4.5 200 6.0 30 80 6 15 2.5 4.0 5.3 150 4.0 40 80 6 15 3.2 4.6 6.2 150 4.0 40 100 6 15 3.8 5.5 7.0 150 3.0 50 150 8 20 4.5 6.4 8.0 90 3.0 50 150 10 20 5.4 7.4 9.0 85 2.5 50 150 10 25 6.0 8.4 10.0 85 2.5 All information provided in this document is subject to legal disclaimers. Rev. 5 — 26 January 2011 © NXP B.V. 2011. All rights reserved. 4 of 13 BZV55 series NXP Semiconductors Voltage regulator diodes Table 8. Characteristics per type; BZV55-B2V4 to BZV55-C24 …continued Tj = 25 C unless otherwise specified. BZV55xxx 13 15 16 18 20 22 24 Sel Working voltage VZ (V) Differential resistance rdif () Temperature coefficient SZ (mV/K) Diode capacitance Cd (pF)[1] Non-repetitive peak reverse current IZSM (A)[2] IZ = 5 mA IZ = 1 mA IZ = 5 mA IZ = 5 mA Min Max Typ Max Typ Max Min Typ Max Max Max B 12.7 13.3 50 170 10 30 7.0 9.4 11.0 80 2.5 C 12.4 14.1 B 14.7 15.3 50 200 10 30 C 13.8 15.6 9.2 11.4 13.0 75 2.0 B 15.7 16.3 50 200 10 40 10.4 12.4 14.0 75 1.5 C 15.3 17.1 B 17.6 18.4 50 225 C 16.8 19.1 10 45 12.4 14.4 16.0 70 1.5 B 19.6 20.4 60 225 15 55 12.3 15.6 18.0 60 1.5 C 18.8 21.2 B 21.6 22.4 C 20.8 23.3 60 250 20 55 14.1 17.6 20.0 60 1.25 B 23.5 24.5 60 250 25 70 15.9 19.6 22.0 55 1.25 C 22.8 25.6 [1] f = 1 MHz; VR = 0 V [2] tp = 100 s; square wave; Tj = 25 C prior to surge BZV55_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 26 January 2011 © NXP B.V. 2011. All rights reserved. 5 of 13 BZV55 series NXP Semiconductors Voltage regulator diodes Table 9. Characteristics per type; BZV55-B27 to BZV55-C75 Tj = 25 C unless otherwise specified. BZV55xxx 27 30 33 36 39 43 47 51 56 62 68 75 Sel Working voltage VZ (V) Differential resistance rdif () Temperature coefficient SZ (mV/K) Diode capacitance Cd (pF)[1] Non-repetitive peak reverse current IZSM (A)[2] IZ = 2 mA IZ = 0.5 mA IZ = 2 mA IZ = 2 mA Min Max Typ Max Typ Max Min Typ Max Max Max B 26.5 27.5 65 300 25 80 18.0 C 25.1 28.9 22.7 25.3 50 1.0 B 29.4 30.6 70 300 30 80 20.6 25.7 29.4 50 1.0 C 28.0 32.0 B 32.3 33.7 75 325 35 C 31.0 35.0 80 23.3 28.7 33.4 45 0.9 B 35.3 36.7 80 350 35 90 26.0 31.8 37.4 45 0.8 C 34.0 38.0 B 38.2 39.8 80 C 37.0 41.0 350 40 130 28.7 34.8 41.2 45 0.7 B 42.1 43.9 85 375 45 150 31.4 38.8 46.6 40 0.6 C 40.0 46.0 B 46.1 47.9 C 44.0 50.0 85 375 50 170 35.0 42.9 51.8 40 0.5 B 50.0 52.0 90 400 60 180 38.6 46.9 57.2 40 0.4 C 48.0 54.0 B 54.9 57.1 C 52.0 60.0 100 425 70 200 42.2 52.0 63.8 40 0.3 B 60.8 63.2 120 450 80 215 58.8 64.4 71.6 35 0.3 C 58.0 66.0 B 66.6 69.4 C 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35 0.25 B 73.5 76.5 170 500 95 255 73.4 80.2 88.6 35 0.2 C 70.0 79.0 [1] f = 1 MHz; VR = 0 V [2] tp = 100 s; square wave; Tj = 25 C prior to surge BZV55_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 26 January 2011 © NXP B.V. 2011. All rights reserved. 6 of 13 BZV55 series NXP Semiconductors Voltage regulator diodes mbg801 103 PZSM (W) mbg781 300 IF (mA) 102 200 (1) 10 100 (2) 1 10−1 1 0 0.6 10 tp (ms) 0.8 1 VF (V) (1) Tj = 25 C (prior to surge) Tj = 25 C (2) Tj = 150 C (prior to surge) Fig 2. Non-repetitive peak reverse power dissipation as a function of pulse duration; maximum values Fig 3. mbg783 0 Forward current as a function of forward voltage; typical values mbg782 10 12 SZ (mV/K) SZ (mV/K) 4V3 11 10 −1 9V1 5 3V9 8V2 7V5 6V8 3V6 −2 6V2 5V6 5V1 0 3V3 4V7 3V0 2V4 2V7 −3 Fig 4. 0 20 40 IZ (mA) −5 60 0 4 8 12 BZV55-B/C2V4 to BZV55-B/C4V3 BZV55-B/C4V7 to BZV55-B/C12 Tj = 25 C to 150 C Tj = 25 C to 150 C Temperature coefficient as a function of working current; typical values BZV55_SER Product data sheet Fig 5. 16 IZ (mA) 20 Temperature coefficient as a function of working current; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 — 26 January 2011 © NXP B.V. 2011. All rights reserved. 7 of 13 BZV55 series NXP Semiconductors Voltage regulator diodes 8. Package outline 0.3 0.3 1.60 1.45 3.7 3.3 Dimensions in mm Fig 6. 06-03-16 Package outline SOD80C 9. Packing information Table 10. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BZV55-B2V4 to BZV55-C75 [1] BZV55_SER Product data sheet Package SOD80C Description 4 mm pitch, 8 mm tape and reel Packing quantity 2500 10000 -115 -135 For further information and the availability of packing methods, see Section 13. All information provided in this document is subject to legal disclaimers. Rev. 5 — 26 January 2011 © NXP B.V. 2011. All rights reserved. 8 of 13 BZV55 series NXP Semiconductors Voltage regulator diodes 10. Soldering 4.55 4.30 2.30 solder lands solder paste 2.25 1.70 1.60 solder resist occupied area Dimensions in mm 0.90 (2x) Fig 7. sod080c Reflow soldering footprint SOD80C 6.30 4.90 2.70 1.90 solder lands solder resist occupied area 2.90 1.70 tracks Dimensions in mm sod080c Fig 8. BZV55_SER Product data sheet Wave soldering footprint SOD80C All information provided in this document is subject to legal disclaimers. Rev. 5 — 26 January 2011 © NXP B.V. 2011. All rights reserved. 9 of 13 BZV55 series NXP Semiconductors Voltage regulator diodes 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BZV55_SER v.5 20110126 Product data sheet - BZV55_SER v.4 Modifications: • • • • Section 4 “Marking”: updated Table 6 “Thermal characteristics”: changed Rth(j-t) for Rth(j-sp) Figure 6: superseded by minimized outline drawing Section 12 “Legal information”: updated BZV55_SER v.4 20070719 Product data sheet CPCN200508022F BZV55 v.3 BZV55 v.3 20020228 Product specification - BZV55 v.2 BZV55 v.2 19990521 Product specification - BZV55 v.1 BZV55 v.1 19960426 Product specification - - BZV55_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 26 January 2011 © NXP B.V. 2011. All rights reserved. 10 of 13 BZV55 series NXP Semiconductors Voltage regulator diodes 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. 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Export might require a prior authorization from national authorities. BZV55_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 26 January 2011 © NXP B.V. 2011. All rights reserved. 11 of 13 BZV55 series NXP Semiconductors Voltage regulator diodes Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. 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Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BZV55_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 26 January 2011 © NXP B.V. 2011. All rights reserved. 12 of 13 BZV55 series NXP Semiconductors Voltage regulator diodes 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 26 January 2011 Document identifier: BZV55_SER