DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS ID max TA = +25°C RDS(ON) max -20V 80mΩ @ VGS = 4.5V -2.7A 110mΩ @ VGS = 2.5V -2.1A Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.008 grams (approximate) Applications Backlighting Power Management Functions DC-DC Converters Motor control Drain D SOT23 Top View Pin Configuration Source Top View S G Gate Internal Schematic Ordering Information (Note 4) Part Number DMG2301U-7 Notes: Case SOT23 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html Marking Information YM NEW PRODUCT Features G21 Shanghai A/T Site Chengdu A/T Site Date Code Key Year Code 2009 W Month Code Jan 1 2010 X Feb 2 DMG2301U Document number: DS31848 Rev. 3 - 2 G21 = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y̅ = Year (ex: A = 2013) M = Month (ex: 9 = September) 2011 Y Mar 3 2012 Z Apr 4 May 5 2013 A Jun 6 1 of 6 www.diodes.com 2014 B Jul 7 2015 C Aug 8 2016 D Sep 9 2017 E Oct O 2018 F Nov N Dec D September 2013 © Diodes Incorporated DMG2301U Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -4.5V Steady State Continuous Drain Current (Note 5) VGS = -2.5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C Units V V -2.7 ID A -2.1 -2.1 -1.7 -27 ID Pulsed Drain Current (Note 6) NEW PRODUCT Value -20 ±8 IDM A A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 0.8 157 -55 to +150 Unit W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 -1.0 ±100 V A nA VGS = 0V, ID = -250A VDS = -16V, VGS = 0V VGS = 8V, VDS = 0V VGS(th) -0.45 V Static Drain-Source On-Resistance RDS (ON) |Yfs| VSD 10 -0.75 -1.0 80 110 -1.0 VDS = VGS, ID = -250A VGS = -4.5V, ID = -2.8A VGS = -2.5V, ID = -2.0A VDS = -5V, ID = -2.8A VGS = 0V, IS = -1A Ciss Coss Crss RG Qg Qgs Qgd tD(on) tr tD(off) tf 608 82 72 44.9 6.5 0.9 1.5 12.5 10.3 46.5 22.2 40 30 140 66 Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V pF pF pF Ω nC nC nC ns ns ns ns Test Condition VDS = -6V, VGS = 0V f = 1.0MHz VGS = 0V, VDS = 0V, f = 1.0MHz VGS = -4.5V, VDS = -10V, ID = -3A VDS = -10V, VGS = -4.5V, RL = 10, RG = 1.0, ID = -1A 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature.. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMG2301U Document number: DS31848 Rev. 3 - 2 2 of 6 www.diodes.com September 2013 © Diodes Incorporated DMG2301U 10 VGS = -8.0V 10 VGS = -4.5V VGS = -3.0V VGS = -2.5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 6 4 2 VDS = -5V 8 VGS = -2.0V VGS = -1.5V 6 4 2 TA = 150°C TA = 85°C TA = 25°C TA = 125°C VGS = -1.2V 0 0.5 1 1.5 2 2.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 3 0.25 0.20 0.15 0.10 VGS = -1.8V VGS = -2.5V 0.05 VGS = -4.5V 0 0.1 1 -ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage T A = -55°C 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 0.5 1 1.5 2 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 0.16 VGS = -4.5V 0.12 TA = 150°C 0.08 T A = 125°C TA = 85°C TA = 25°C 0.04 10 1.7 0 T A = -55°C 0 2 4 6 8 -ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 10 0.16 1.5 VGS = -2.5V ID = -5A 1.3 RDSON, DRAIN-SOURCE ON-RESISTANCE () RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 8 VGS = -5V ID = -10A 1.1 0.9 0.12 0.08 0.04 VGS = -2.5V ID = -5.5A VGS = -5V ID = -10A 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMG2301U Document number: DS31848 Rev. 3 - 2 3 of 6 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature September 2013 © Diodes Incorporated DMG2301U -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 10 1.2 0.8 ID = -1mA ID = -250µA 0.4 1,000 6 TA = 25°C 4 2 0.4 0.6 0.8 1.0 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 10,000 f = 1MHz -IDSS, LEAKAGE CURRENT (nA) Ciss 100 8 0 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature C, CAPACITANCE (pF) Coss Crss TA = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 T A = 25°C 10 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 1 20 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) 20 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1.6 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 156°C/W D = 0.02 0.01 P(pk) D = 0.01 t2 T J - T A = P * RJA(t) Duty Cycle, D = t1 /t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 t1 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response DMG2301U Document number: DS31848 Rev. 3 - 2 4 of 6 www.diodes.com September 2013 © Diodes Incorporated DMG2301U Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. ° 7 l l A H E N A L 5 P2 E. G0 U A G J K 1 K a M 1 L L D G F NEW PRODUCT A B C SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 8° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X DMG2301U Document number: DS31848 Rev. 3 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com September 2013 © Diodes Incorporated DMG2301U IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). NEW PRODUCT Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated www.diodes.com DMG2301U Document number: DS31848 Rev. 3 - 2 6 of 6 www.diodes.com September 2013 © Diodes Incorporated