Diodes DMG2301U P-channel enhancement mode mosfet Datasheet

DMG2301U
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS






ID max
TA = +25°C
RDS(ON) max
-20V
80mΩ @ VGS = 4.5V
-2.7A
110mΩ @ VGS = 2.5V
-2.1A
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Description
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.


Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish  Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (approximate)


Applications






Backlighting
Power Management Functions
DC-DC Converters
Motor control
Drain
D
SOT23
Top View
Pin Configuration
Source
Top View
S
G
Gate
Internal Schematic
Ordering Information (Note 4)
Part Number
DMG2301U-7
Notes:
Case
SOT23
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
YM
NEW PRODUCT
Features
G21
Shanghai A/T Site
Chengdu A/T Site
Date Code Key
Year
Code
2009
W
Month
Code
Jan
1
2010
X
Feb
2
DMG2301U
Document number: DS31848 Rev. 3 - 2
G21 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2011
Y
Mar
3
2012
Z
Apr
4
May
5
2013
A
Jun
6
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2014
B
Jul
7
2015
C
Aug
8
2016
D
Sep
9
2017
E
Oct
O
2018
F
Nov
N
Dec
D
September 2013
© Diodes Incorporated
DMG2301U
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
Continuous Drain Current (Note 5) VGS = -2.5V
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Units
V
V
-2.7
ID
A
-2.1
-2.1
-1.7
-27
ID
Pulsed Drain Current (Note 6)
NEW PRODUCT
Value
-20
±8
IDM
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
0.8
157
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-20






-1.0
±100
V
A
nA
VGS = 0V, ID = -250A
VDS = -16V, VGS = 0V
VGS = 8V, VDS = 0V
VGS(th)
-0.45

V
Static Drain-Source On-Resistance
RDS (ON)


|Yfs|
VSD


10
-0.75
-1.0
80
110

-1.0
VDS = VGS, ID = -250A
VGS = -4.5V, ID = -2.8A
VGS = -2.5V, ID = -2.0A
VDS = -5V, ID = -2.8A
VGS = 0V, IS = -1A
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf











608
82
72
44.9
6.5
0.9
1.5
12.5
10.3
46.5
22.2







40
30
140
66
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS = -6V, VGS = 0V
f = 1.0MHz
VGS = 0V, VDS = 0V, f = 1.0MHz
VGS = -4.5V, VDS = -10V, ID = -3A
VDS = -10V, VGS = -4.5V,
RL = 10, RG = 1.0, ID = -1A
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature..
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG2301U
Document number: DS31848 Rev. 3 - 2
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DMG2301U
10
VGS = -8.0V
10
VGS = -4.5V
VGS = -3.0V
VGS = -2.5V
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
6
4
2
VDS = -5V
8
VGS = -2.0V
VGS = -1.5V
6
4
2
TA = 150°C
TA = 85°C
TA = 25°C
TA = 125°C
VGS = -1.2V
0
0.5
1
1.5
2
2.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
3
0.25
0.20
0.15
0.10
VGS = -1.8V
VGS = -2.5V
0.05
VGS = -4.5V
0
0.1
1
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
T A = -55°C
0
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
0.5
1
1.5
2
2.5
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
3
0.16
VGS = -4.5V
0.12
TA = 150°C
0.08
T A = 125°C
TA = 85°C
TA = 25°C
0.04
10
1.7
0
T A = -55°C
0
2
4
6
8
-ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
10
0.16
1.5
VGS = -2.5V
ID = -5A
1.3
RDSON, DRAIN-SOURCE
ON-RESISTANCE ()
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
8
VGS = -5V
ID = -10A
1.1
0.9
0.12
0.08
0.04
VGS = -2.5V
ID = -5.5A
VGS = -5V
ID = -10A
0.7
0.5
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMG2301U
Document number: DS31848 Rev. 3 - 2
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0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
September 2013
© Diodes Incorporated
DMG2301U
-IS, SOURCE CURRENT (A)
-VGS(TH), GATE THRESHOLD VOLTAGE (V)
10
1.2
0.8
ID = -1mA
ID = -250µA
0.4
1,000
6
TA = 25°C
4
2
0.4
0.6
0.8
1.0
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
10,000
f = 1MHz
-IDSS, LEAKAGE CURRENT (nA)
Ciss
100
8
0
0.2
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
C, CAPACITANCE (pF)
Coss
Crss
TA = 150°C
1,000
TA = 125°C
100
TA = 85°C
10
T A = 25°C
10
0
4
8
12
16
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
1
20
0
4
8
12
16
-VDS, DRAIN-SOURCE VOLTAGE (V)
20
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
1.6
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RJA(t) = r(t) * RJA
RJA = 156°C/W
D = 0.02
0.01
P(pk)
D = 0.01
t2
T J - T A = P * RJA(t)
Duty Cycle, D = t1 /t2
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
t1
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
DMG2301U
Document number: DS31848 Rev. 3 - 2
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© Diodes Incorporated
DMG2301U
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
°
7
l
l
A
H
E
N
A
L
5
P2
E.
G0
U
A
G
J
K
1
K
a
M
1
L
L
D
G
F
NEW PRODUCT
A
B
C
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
8°

All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
X
DMG2301U
Document number: DS31848 Rev. 3 - 2
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
E
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DMG2301U
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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Copyright © 2013, Diodes Incorporated
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DMG2301U
Document number: DS31848 Rev. 3 - 2
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