DSI30-12AS Standard Rectifier VRRM = 1200 V I FAV = 30 A VF = 1.25 V Single Diode Part number DSI30-12AS Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-263 (D2Pak) ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130107a DSI30-12AS Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 1300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 V IR reverse current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case VR = 1200 V TVJ = 25°C 40 µA TVJ = 150°C 1.5 mA TVJ = 25°C 1.29 V 1.60 V 1.25 V 30 A IF = 60 A IF = 30 A IF = 60 A TVJ = 150°C TC = 130°C rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1.66 V T VJ = 175 °C 30 A TVJ = 175 °C 0.82 V d = 0.5 for power loss calculation only Ptot typ. VR = 1200 V IF = forward voltage drop min. 14.1 mΩ 0.9 K/W K/W 0.25 TC = 25°C 160 W t = 10 ms; (50 Hz), sine TVJ = 45°C 300 A t = 8,3 ms; (60 Hz), sine VR = 0 V 325 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 255 A t = 8,3 ms; (60 Hz), sine VR = 0 V 275 A t = 10 ms; (50 Hz), sine TVJ = 45°C 450 A²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 440 A²s TVJ = 150 °C 325 A²s 315 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 10 pF 20130107a DSI30-12AS Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 35 Unit A -55 150 °C -40 175 °C 1) Weight 2 FC 20 mounting force with clip g 60 N Product Marking XXXXXXXXX Part No. IXYS yyww z Logo Date Code Assembly Line 000000 Assembly Code Ordering Standard Part Number DSI30-12AS Similar Part DSI30-12A DSI30-12AC DSI30-16AS DSI30-16A DSI30-08AS DSI30-08A DSI30-08AC Equivalent Circuits for Simulation I V0 R0 Package TO-220AC (2) ISOPLUS220AC (2) TO-263AB (D2Pak) (2) TO-220AC (2) TO-263AB (D2Pak) (2) TO-220AC (2) ISOPLUS220AC (2) * on die level Delivery Mode Tube Quantity 50 Code No. 507511 Voltage class 1200 1200 1600 1600 800 800 800 T VJ = 175 °C Rectifier V 0 max threshold voltage 0.82 R 0 max slope resistance * 11 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Marking on Product DSI30-12AS V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20130107a DSI30-12AS Outlines TO-263 (D2Pak) Dim. L1 c2 Supplier Option A1 H D E A D1 W 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) mm (Inches) 2x b E1 9.02 (0.355) W Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 2/4 Data according to IEC 60747and per semiconductor unless otherwise specified 20130107a DSI30-12AS Rectifier 250 60 500 50 Hz, 80% VRRM VR = 0 V 50 400 200 40 IFSM IF 300 TVJ = 45°C TVJ = 45°C 30 2 It [A] [A] 200 150 20 TVJ = 125°C TVJ = 150°C 2 150°C [A s] TVJ = 150°C 100 10 TVJ = 25°C 0 0.6 0.8 1.0 1.2 1.4 1.6 100 0.001 1.8 0 0.01 0.1 Fig. 1 Forward current versus voltage drop per diode 4 5 6 7 8 91 0 2 Fig. 2 Surge overload current 50 Fig. 3 I t versus time per diode 40 RthHA: 0.6 K/W 0.8 K/W 1 K/W 2 K/W 4 K/W 8 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 Ptot 30 3 t [ms] t [s] VF [V] 40 2 1 1 30 IF(AV)M DC = 1 0.5 0.4 0.33 0.17 0.08 20 [A] [W] 20 10 10 0 0 0 10 20 30 0 50 100 150 200 0 50 Tamb [°C] IF(AV)M [A] 100 150 200 TC [°C] Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs. case temperature 1.0 0.8 Constants for ZthJC calculation: 0.6 i Rthi (K/W) ZthJC ti (s) 0.4 1 0.03 0.0004 [K/W] 2 0.08 0.002 3 0.2 0.003 4 0.39 0.03 5 0.2 0.29 0.2 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130107a