AP6N6R5LMT-L
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
▼ SO-8 Compatible with Heatsink
▼ Lower On-resistance
BVDSS
RDS(ON)
ID
D
60V
6.5mΩ
68A
G
▼ RoHS Compliant & Halogen-Free
D
S
Description
D
D
D
AP6N6R5L series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
S
®
The PMPAK 5x6L package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
S
S
G
®
PMPAK 5x6L
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
.
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
+20 / -16
V
ID@TC=25℃
Drain Current, VGS @ 10V
68
A
21.1
A
16.9
A
160
A
52
W
5
W
42
mJ
ID@TA=25℃
ID@TA=70℃
Drain Current, VGS @ 10V
3
Drain Current, VGS @ 10V
3
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
3
4
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient
Value
Unit
2.4
℃/W
25
℃/W
1
201704271
AP6N6R5LMT-L
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
60
-
-
V
VGS=10V, ID=13.5A
-
-
6.5
mΩ
VGS=5V, ID=11.5A
-
-
10.7
mΩ
1.2
-
3
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=13.5A
-
36
-
S
IDSS
Drain-Source Leakage Current
VDS=48V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= 20V, VDS=0V
-
-
100
nA
Qg
Total Gate Charge
ID=11.5A
-
26
41.6
nC
Qgs
Gate-Source Charge
VDS=30V
-
8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
12
-
nC
td(on)
Turn-on Delay Time
VDS=30V
-
13
-
ns
tr
Rise Time
ID=13.5A
-
36
-
ns
td(off)
Turn-off Delay Time
RG=6Ω
-
40
-
ns
tf
Fall Time
VGS=10V
-
64
-
ns
Ciss
Input Capacitance
VGS=0V
-
2560 4100
pF
Coss
Output Capacitance
VDS=30V
Crss
Rg
-
1330
-
pF
Reverse Transfer Capacitance
.
f=1.0MHz
-
90
-
pF
Gate Resistance
f=1.0MHz
-
1
2
Ω
Min.
Typ.
IS=13.5A, V GS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=13.5A, VGS=0V,
-
48
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
50
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
o
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec; 60 C/W at steady state.
o
4.Starting Tj=25 C , VDD=30V , L=0.1mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6N6R5LMT-L
100
160
10V
8.0V
7.0V
6.0V
120
T C = 150 o C
10V
8.0V
7.0V
6.0V
5.0V
80
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 o C
5.0V
80
V G = 4.0V
60
V G = 4.0V
40
40
20
0
0
0
2
4
6
8
10
0
1
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3
4
5
6
Fig 2. Typical Output Characteristics
2.4
14
I D =13.5A
V G =10V
I D = 11.5 A
o
T C =25 C
12
2.0
10
.
8
Normalized RDS(ON)
RDS(ON) (mΩ)
2
V DS , Drain-to-Source Voltage (V)
6
1.6
1.2
0.8
4
0.4
2
4
6
8
10
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
60
2.0
I D =250uA
50
Normalized VGS(th)
1.6
IS(A)
40
T j =150 o C
T j =25 o C
30
1.2
0.8
20
0.4
10
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6N6R5LMT-L
8
f=1.0MHz
4000
6
3000
C (pF)
VGS , Gate to Source Voltage (V)
I D = 11.5 A
V DS =30V
4
C iss
2000
C oss
1000
2
C rss
0
0
0
10
20
30
1
40
21
Q G , Total Gate Charge (nC)
61
81
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Operation in this
area limited by
RDS(ON)
10
100us
1
1ms
T C =25 o C
Single Pulse
10ms
DC
0.1
0.1
1
10
.
Normalized Thermal Response (Rthjc)
1000
ID (A)
41
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthjc + T c
0.01
Single Pulse
0.01
0.00001
100
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
100
V DS =5V
ID , Drain Current (A)
ID , Drain Current (A)
80
60
40
60
40
T j =150 o C
20
T j =25 o C
20
o
T j = -55 C
0
0
25
50
75
100
T C , Case Temperature (
125
o
C)
Fig 11. Drain Current v.s. Case
Temperature
150
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
4
AP6N6R5LMT-L
80
2
I D =1mA
PD, Power Dissipation(W)
Normalized BVDSS
1.6
1.2
0.8
60
40
20
0.4
0
0
-100
-50
0
T
50
100
150
0
o
j
50
100
150
o
, Junction Temperature ( C)
T C , Case Temperature( C)
Fig 13. Normalized BVDSS v.s. Junction
Fig 14. Total Power Dissipation
Temperature
40
T j =25 o C
RDS(ON) (mΩ)
30
20
.
10
V GS =5V
V GS =10V
0
0
20
40
60
80
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
AP6N6R5LMT-L
MARKING INFORMATION
Part Number
6N6R5L
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6