APM2070PD P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-3A, RDS(ON)=50mΩ(typ.) @ VGS=-4.5V RDS(ON)=70mΩ(typ.) @ VGS=-2.5V • • • G D S Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant) (3) S Applications • • (1) G Switching Regulators Switching Converters D (2) P-Channel MOSFET Ordering and Marking Information P ackage C ode D : S O T -8 9 O p e r a tin g J u n c tio n T e m p . R a n g e C : - 5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube TR : T ape & R eel L e a d F re e C o d e L : L e a d F r e e D e v ic e B la n k : O r ig in a l D e v ic e A PM 2070P L e a d F re e C o d e H a n d lin g C o d e Tem p. Range P ackage C ode A PM 2070P D : A PM 2070 XXXXX X X X X X - D a te C o d e Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 1 www.anpec.com.tw APM2070PD Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol Parameter Rating VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±12 V -3 ID* Continuous Drain Current IDM* 300µs Pulsed Drain Current IS* Diode Continuous Forward Current -1.5 TJ Maximum Junction Temperature 150 VGS=-4.5V TSTG Storage Temperature Range PD* Power Dissipation for Single Operation RθJA* Unit A -12 A °C -55 to 150 TA=25°C 1.47 TA=100°C 0.58 Thermal Resistance-Junction to Ambient W °C/W 85 Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 Electrical Characteristics Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) VSD a a (TA = 25°C unless otherwise noted) Test Condition VGS=0V, IDS=-250µA Gate Leakage Current VGS=±12V, VDS=0V Gate Charge Characteristics Qg Total Gate Charge Typ. Max. -20 -1 -30 -0.6 -0.75 µA -1 V ±100 nA VGS=-4.5V, IDS=-3A 50 70 VGS=-2.5V, IDS=-1.5A 70 100 -0.7 -1.3 17.4 23 ISD=-1A , VGS=0V Unit V TJ=85°C VDS=VGS, IDS=-250µA Diode Forward Voltage Min. VDS=-16V, VGS=0V Gate Threshold Voltage Drain-Source On-state Resistance APM2070PD mΩ V b Qgs Gate-Source Charge Qgd Gate-Drain Charge Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 VDS=-10V, VGS=-4.5V, IDS=-3A 2.7 nC 3.8 2 www.anpec.com.tw APM2070PD Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted) Symbol Parameter Test Condition APM2070PD Min. Typ. Max. Unit b Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf Notes: VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-15V, Frequency=1.0MHz VDD=-10V, RL=10Ω, IDS=-1A, VGEN=-4.5V, RG=6Ω Turn-off Fall Time Ω 13 1120 pF 295 230 12 21 25 42 52 85 18 32 ns a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 3 www.anpec.com.tw APM2070PD Typical Characteristics Power Dissipation Drain Current 1.6 3.5 1.4 3.0 -ID - Drain Current (A) Ptot - Power (W) 1.2 1.0 0.8 0.6 0.4 2.5 2.0 1.5 1.0 0.5 0.2 o 0.0 o TA=25 C 0 20 40 60 0.0 80 100 120 140 160 Tj - Junction Temperature (°C) Normalized Transient Thermal Resistence it im on )L s( Rd -ID - Drain Current (A) 10 300µs 1 1ms 10ms 100ms 1s 0.1 DC o 10 40 60 80 100 120 140 160 180 2 1 Duty = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.01 2 1E-3 1E-4 1E-3 0.01 100 -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 20 Thermal Transient Impedance 50 1 0 Tj - Junction Temperature Safe Operation Area TA=25 C 0.01 0.01 0.1 TA=25 C,VG=-4.5V Mounted on 1in pad o RθJA : 85 C/W 0.1 1 10 100 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM2070PD Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 12 100 VGS=-3,-4,-5,-6,-7,-8,-9,-10V 90 8 RDS(ON) - On - Resistance (mΩ) -ID - Drain Current (A) 10 -2V 6 4 -1.5V 2 0 70 60 VGS=-4.5V 50 40 30 0 2 4 6 8 10 VGS=-2.5V 80 0 2 4 6 8 10 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 12 1.8 12 IDS =-250µA 1.6 Normalized Threshold Voltage -ID - Drain Current (A) 10 8 6 4 o Tj=125 C o 2 0 0.0 Tj=-55 C o Tj=25 C 0.5 1.0 1.5 2.0 2.5 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 3.0 -VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 1.4 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM2070PD Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 10 2.0 IDS = -3A 1.6 o -IS - Source Current (A) Normalized On Resistance 1.8 VGS = -4.5V 1.4 1.2 1.0 0.8 0.6 0.4 0.2 Tj=150 C o Tj=25 C 1 o RON@Tj=25 C: 50mΩ 0.0 -50 -25 0 25 50 75 0.1 0.0 100 125 150 Tj - Junction Temperature (°C) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD - Source - Drain Voltage (V) Capacitance Gate Charge 5 2000 VDS= -10V Frequency=1MHz -VGS - Gate-source Voltage (V) ID = -3A C - Capacitance (pF) 1600 1200 Ciss 800 Coss 400 Crss 0 4 3 2 1 0 0 4 8 12 16 20 4 8 12 16 20 QG - Gate Charge (nC) -VDS - Drain-Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 0 6 www.anpec.com.tw APM2070PD Package Information SOT-89 (Reference EIAJ ED-7500A Reg stration SC-62) D D1 a E H 1 2 3 L C B1 B e e1 A a D im A B B1 C D D1 e e1 E H L α M illim eters M in. 1.40 0.40 0.35 0.35 4.40 1.35 Inches M ax. 1.60 0.56 0.48 0.44 4.60 1.83 M in. 0.055 0.016 0.014 0.014 0.173 0.053 1.50 B SC 3.00 B SC 2.29 3.75 0.80 Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 M ax. 0.063 0.022 0.019 0.017 0.181 0.072 0.059 BSC 0.118 B SC 2.60 4.25 1.20 10° 7 0.090 0.148 0.031 0.102 0.167 0.047 10° www.anpec.com.tw APM2070PD Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP C ritical Zone T L to T P T e m p e ra tu re R am p-up TL tL T sm ax T sm in R am p-down ts Preheat 25 t 25 °C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 8 www.anpec.com.tw APM2070PD Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 ≥350 <2.5 m m 240 +0/-5°C 225 +0/-5°C ≥2.5 m m 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0°C* 260 +0°C* 260 +0°C* 1.6 m m – 2.5 m m 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 m m 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0°C. For exam ple 260°C+0°C) at the rated MSL level. Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD-883D-1005.7 JESD-22-B,A102 MIL-STD-883D-1011.9 Description 245°C, 5 SEC 1000 Hrs Bias @125°C 168 Hrs, 100%RH, 121°C -65°C~150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ko Ao Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 D1 9 www.anpec.com.tw APM2070PD Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A B 178 ±1 70 ± 2 F D D1 5.5 ± 0.05 1.5± 0.1 1.5± 0.1 SOT-89 C J T1 T2 14 ± 2 1.3 ± 0.3 Po P1 Ao W 12 + 0.3 12 - 0.1 Bo 4.0 ± 0.1 2.0 ± 0.1 4.8 ± 0.1 4.5± 0.1 13.5 ± 0.15 3 ± 0.15 P E 8 ± 0.1 1.75± 0.1 Ko t 1.80± 0.1 0.3±0.013 (mm) Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel SOT-89 12 9.3 1000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 10 www.anpec.com.tw