DSK BAV16WS Silicon epitaxial planar diode Datasheet

Diode Semiconductor Korea
Silicon Epitaxial Planar Diode
BAV16WS
FEATURES
Pb
z
Fast Switching Speed:trr=4ns(Typ).
z
Surface Mount Package Ideally Suited For
Lead-free
Automatic Insertion.
z
For General Purpose Switching Applications.
z
High Conductance.
z
Available in Lead Free Version.
APPLICATIONS
z
SOD-323
Surface mount fast switching diode.
ORDERING INFORMATION
Type No.
Marking
Package Code
T6
SOD-323
BAV16WS
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Characteristic
Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
VRM
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Reverse Voltage
VRRM
VRWM
VR
75
V
RMS Reverse Voltage
VR(RMS)
53
V
Forward Continuous Current
IFM
300
mA
Average Rectified Output Current
Io
150
mA
Non-Repetitive Peak Forward Surge Current @t=1.0 μs
@t=1.0 s
IFSM
2.0
1.0
A
Power Dissipation
Pd
200
mW
Thermal Resistance Junction to Ambient Air
RθJA
625
℃/W
Operating and Storage Temperature Rage
Tj,TSTG
-65 to+150
℃
www.diode.kr
Diode Semiconductor Korea
Silicon Epitaxial Planar Diode
BAV16WS
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage
V(BR)R
75
-
V
IR=1.0μA
Forward Voltage
VF
-
0.715
0.855
1.0
1.25
V
IF=1.0mA
IF=10mA
IF=50mA
IF=150mA
Reverse Current
IR
-
1.0
25
μA
nA
VR=75V
VR=20V
Capacitance between
terminals
CT
-
2.0
pF
VR=0,f=1.0MHz
Reverse Recovery Time
trr
-
4.0
ns
IF=IR=10mA,
Irr=0.1×IR,RL=100Ω
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
www.diode.kr
Diode Semiconductor Korea
Silicon Epitaxial Planar Diode
BAV16WS
PACKAGE OUTLINE
Plastic surface mounted package
SOD-323
SOD-323
K
B
C
A
D
Dim
Min
Max
A
1.275
1.325
B
1.675
1.725
C
J
E
H
0.9 Typical
D
0.25
0.35
E
0.27
0.37
H
0.02
0.1
J
K
0.1 Typical
2.6
2.7
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE
INFORMATION
Device
Package
Shipping
BAV16WS
SOD-323
3000/Tape&Reel
www.diode.kr
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