MITSUBISHI IGBT MODULES CM200TU-5F HIGH POWER SWITCHING USE CM200TU-5F ¡IC ................................................................... 200A ¡VCES ............................................................ 250V ¡Insulated Type ¡6-elements in a pack APPLICATION Inverters for battery power source OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 107 90 ±0.25 23 12 4–φ5.5 MOUNTING HOLES CM G E U 12 5–M5NUTS Tc measured point 2.8 E 11 G G E V 12 23 21.7 GuN EuN GvN EvN GwN EwN E G E W 23 11 12 21.7 0.5 G 48.5 E 11 14.4 21.7 3.75 G 21.7 +1 29 –0.5 0.8 11 Tc measured point 8.1 7.1 4 LABEL P 26 102 80 ±0.25 GuP EuP GvP EvP GwP EwP 11 17 P N 11 (4) 3.75 12 N GUP EUP GVP EVP GWP EWP U V W G UN EUN GVN EVN GWN EW N CIRCUIT DIAGRAM Sep. 2000 MITSUBISHI IGBT MODULES CM200TU-5F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Torque strength — Weight Conditions G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C (Note 2) (Note 2) Main Terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M5 Typical value Ratings Unit 250 ±20 200 400 200 400 600 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 680 V V A A W °C °C V N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol Parameter Test conditions Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 20mA, VCE = 10V 3.0 4.0 5.0 V — — — — — — — — — — — — — — — — — — — 1.2 1.1 — — — 1500 — — — — — 10.0 — — — 0.09 — 0.5 1.7 — 55 3.5 1.9 — 600 300 900 500 250 — 2.0 0.21 0.47 — µA Gate leakage current VGE = VCES, VCE = 0V Tj = 25°C IC = 200A, VGE = 10V VCE(sat) Collector to emitter saturation voltage Tj = 125°C Input capacitance Cies VCE = 10V Output capacitance Coes VGE = 0V Reverse transfer capacitance Cres QG Total gate charge VCC = 100V, IC = 200A, VGE = 10V Turn-on delay time td(on) Turn-on rise time tr VCC = 100V, IC = 200A Turn-off delay time td(off) VGE1 = VGE2 = 10V tf Turn-off fall time RG = 13Ω, Inductive load switching operation trr (Note 1) Reverse recovery time IE = 200A Qrr (Note 1) Reverse recovery charge VEC(Note 1) Emitter-collector voltage IE = 200A, VGE = 0V Rth(j-c)Q IGBT part (1/6 module) *1 Thermal resistance Rth(j-c)R FWDi part (1/6 module) Contact thermal resistance Rth(c-f) Case to fin, Thermal compoundapplied*2 (1/6 module) *3 Thermal resistance Rth(j-c’)Q Tc measured point is just under the chips IGES mA V nF nC ns ns µC V °C/W 0.16 Note 1. IE, VEC, t rr, Q rr and die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Sep. 2000