Mitsubishi CM200TU-5F High power switching use Datasheet

MITSUBISHI IGBT MODULES
CM200TU-5F
HIGH POWER SWITCHING USE
CM200TU-5F
¡IC ................................................................... 200A
¡VCES ............................................................ 250V
¡Insulated Type
¡6-elements in a pack
APPLICATION
Inverters for battery power source
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
107
90 ±0.25
23
12
4–φ5.5
MOUNTING HOLES
CM
G
E
U
12
5–M5NUTS
Tc measured point 2.8
E
11
G
G
E
V
12
23
21.7
GuN
EuN
GvN
EvN
GwN
EwN
E
G
E
W
23
11
12
21.7
0.5
G
48.5
E
11 14.4
21.7
3.75
G
21.7
+1
29 –0.5
0.8
11
Tc measured point
8.1
7.1
4
LABEL
P
26
102
80 ±0.25
GuP
EuP
GvP
EvP
GwP
EwP
11
17
P
N
11
(4)
3.75
12
N
GUP
EUP
GVP
EVP
GWP
EWP
U
V
W
G UN
EUN
GVN
EVN
GWN
EW N
CIRCUIT DIAGRAM
Sep. 2000
MITSUBISHI IGBT MODULES
CM200TU-5F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
—
Torque strength
—
Weight
Conditions
G-E Short
C-E Short
TC = 25°C
Pulse
TC = 25°C
Pulse
TC = 25°C
(Note 2)
(Note 2)
Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M5
Typical value
Ratings
Unit
250
±20
200
400
200
400
600
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
2.5 ~ 3.5
680
V
V
A
A
W
°C
°C
V
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Parameter
Test conditions
Limits
Typ.
—
Max.
1
Unit
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
Min.
—
VGE(th)
Gate-emitter threshold voltage
IC = 20mA, VCE = 10V
3.0
4.0
5.0
V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.2
1.1
—
—
—
1500
—
—
—
—
—
10.0
—
—
—
0.09
—
0.5
1.7
—
55
3.5
1.9
—
600
300
900
500
250
—
2.0
0.21
0.47
—
µA
Gate leakage current
VGE = VCES, VCE = 0V
Tj = 25°C
IC = 200A, VGE = 10V
VCE(sat)
Collector to emitter saturation voltage
Tj = 125°C
Input capacitance
Cies
VCE = 10V
Output capacitance
Coes
VGE = 0V
Reverse transfer capacitance
Cres
QG
Total gate charge
VCC = 100V, IC = 200A, VGE = 10V
Turn-on delay time
td(on)
Turn-on rise time
tr
VCC = 100V, IC = 200A
Turn-off delay time
td(off)
VGE1 = VGE2 = 10V
tf
Turn-off fall time
RG = 13Ω, Inductive load switching operation
trr (Note 1) Reverse recovery time
IE = 200A
Qrr (Note 1) Reverse recovery charge
VEC(Note 1) Emitter-collector voltage
IE = 200A, VGE = 0V
Rth(j-c)Q
IGBT part (1/6 module)
*1
Thermal resistance
Rth(j-c)R
FWDi part (1/6 module)
Contact thermal resistance
Rth(c-f)
Case to fin, Thermal compoundapplied*2 (1/6 module)
*3
Thermal resistance
Rth(j-c’)Q
Tc measured point is just under the chips
IGES
mA
V
nF
nC
ns
ns
µC
V
°C/W
0.16
Note 1. IE, VEC, t rr, Q rr and die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Tc measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Sep. 2000
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