JIEJIE MICROELECTRONICS CO. , Ltd ACJT10 Series 10A TRIACs Rev.3.0 DESCRIPTION: The ACJT10 series of double mesa technology provide high interference immunity, They can be used as an static ON/OFF function in electrical control system, and used as a driver of low power and high inductance or resistive loads, such as jet pumps of dishwashers, fans of air-conditioner ... ACJT10xx-xxA provides insulation voltage rated at 2500V RMS and ACJT10xx-xxF provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. 1 2 3 1 2 MAIN FEATURES Symbol Value Unit IT(RMS) 10 A VDRM /VRRM 1000 V IGT ≤10 or ≤35 or ≤50 mA 1 2 3 TO-220A Insulated 3 TO-220B Non-Insulated TO-220F Insulated T1(1) T2(2) G(3) ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Tstg -40-150 ℃ Tj -40-125 ℃ Repetitive peak off-state voltage( Tj=25℃) VDRM 1000 V Repetitive peak reverse voltage( Tj=25℃) VRRM 1000 V Non repetitive surge peak Off-state voltage VDSM VDRM +100 V Non repetitive peak reverse voltage VRSM VRRM +100 V IT(RMS) 10 A ITSM 100 A I2t 55 A2s Storage junction temperature range Operating junction temperature range TO-220A(Ins) (TC=90℃) RMS on-state current TO-220B(Non-Ins) (TC=100℃) TO-220F(Ins) (TC=84℃) Non repetitive surge peak on-state current (full cycle, F=50Hz) I2t value for fusing ( tp=10ms) TEL：+86-513-83639777 - 1 / 5- http://www.jjwdz.com ACJT10 Series JieJie Microelectronics CO. , Ltd Rate of rise of on-state current (IG=2×IGT) Peak gate current Average gate power dissipation Peak gate power dIT/dt 50 A/μs IGM 2 A PG(AV) 0.1 W PGM 1 W ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Value Symbol IGT VGT VGD Test Condition Quadrant VD=12V RL=33Ω VD=VDRM Tj=125℃ RL=3.3KΩ Unit ACJT1035 ACJT1050 Ⅰ-Ⅱ-Ⅲ MAX 10 35 50 mA Ⅰ-Ⅱ-Ⅲ MAX 1.4 1.4 1.5 V Ⅰ-Ⅱ-Ⅲ MIN Ⅰ-Ⅲ IL IG=1.2IGT IH IT=100mA VD=2/3VDRM Gate Open Tj=125℃ dV/dt ACJT1010 Ⅱ 0.2 V 20 70 80 35 80 100 MAX 20 50 70 mA MIN 500 1500 2000 V/μs mA MAX STATIC CHARACTERISTICS Symbol VTM IDRM IRRM Parameter ITM=14A tp=380μs VD=VDRM VR=VRRM Value(MAX) Unit Tj=25℃ 1.55 V Tj=25℃ 10 μA Tj=125℃ 1.5 mA Value Unit THERMAL RESISTANCES Symbol Rth(j-c) Parameter junction to case(AC) TEL：+86-513-83639777 TO-220A(Ins) 3.1 TO-220B(Non-Ins) 2.3 TO-220F(Ins) 3.5 - 2 / 5- ℃/W http://www.jjwdz.com ACJT10 Series JieJie Microelectronics CO. , Ltd ORDERING INFORMATION AC J T 10 35 -10 F A:TO-220A(Ins) F:TO-220F(Ins) B:TO-220B(Non-Ins) AC switch JieJie Microelectronics Co.,Ltd 10:VDRM /VRRM≥1000V 10: IGT1-3≤10mA 35: IGT1-3≤35mA 50: IGT1-3≤50mA Triacs IT(RMS):10A PACKAGE MECHANICAL DATA Dimensions Ref. m 3 ax E Min. A M C2 H D V1 L3 F Φ m .8 C3 L1 Millimeters L2 TO-220A Ins TEL：+86-513-83639777 Typ. Max. 4.60 0.173 0.181 B 0.61 0.88 0.024 0.035 C 0.46 0.70 0.018 0.028 C2 1.21 1.32 0.048 0.052 C3 2.40 2.72 0.094 0.107 D 8.60 9.70 0.339 0.382 E 9.80 10.4 0.386 0.409 F 6.55 6.95 0.258 0.274 2.54 28.0 0.1 29.8 1.102 3.75 L1 C Min. 4.40 H G Max. A G B Typ. Inches 1.173 0.148 L2 1.14 1.70 0.045 0.067 L3 2.65 2.95 0.104 0.116 V1 - 3 / 5- 45° 45° http://www.jjwdz.com ACJT10 Series JieJie Microelectronics CO. , Ltd PACKAGE MECHANICAL DATA Dimensions Ref. x E Min. A C2 H D V1 L3 F Φ Ma mm 8 . 3 Millimeters JIE L1 C3 L2 Max. 0.173 0.181 B 0.61 0.88 0.024 0.035 C 0.46 0.70 0.018 0.028 C2 1.21 1.32 0.048 0.052 C3 2.40 2.72 0.094 0.107 D 8.60 9.70 0.339 0.382 E 9.60 10.4 0.378 0.409 F 6.20 6.60 0.244 0.260 2.54 28.0 0.1 29.8 1.102 3.75 1.173 0.148 L2 1.14 1.70 0.045 0.067 L3 2.65 2.95 0.104 0.116 45° V1 TO-220B Non-Ins Typ. 4.60 L1 C Min. 4.40 H G Max. A G B Typ. Inches 45° Dimensions Ref. m 5m E M 3. Min. A C2 F L3 Φ ax H D V1 L1 C3 L2 C TO-220F Ins Min. 4.80 0.173 0.83 0.029 Typ. Max. B 0.74 C 0.48 0.75 0.019 0.030 C2 2.40 2.70 0.094 0.106 C3 2.60 3.00 0.102 0.118 D 8.80 9.30 0.346 0.366 E 9.70 10.3 0.382 0.406 F 6.40 7.00 0.252 0.276 0.80 2.54 28.0 29.8 0.031 1.102 1.173 0.045 0.067 L3 3.30 0.130 V1 45° 45° - 4 / 5- 0.033 0.143 1.70 1.14 0.189 0.1 3.63 L1 L2 G Max. 4.40 G B Typ. Inches A H TEL：+86-513-83639777 Millimeters http://www.jjwdz.com ACJT10 Series JieJie Microelectronics CO. , Ltd FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature IT(RMS) (A) 12 P(w) 15 α=180° TO-220B(Non-Ins) 10 10 8 TO-220A(Ins) 6 5 4 TO-220F(Ins) 2 IT(RMS) (A) 0 0 2 4 6 8 Tc (℃) 0 0 10 FIG.3: Surge peak on-state current versus number of cycles 25 50 75 100 125 FIG.4: On-state characteristics (maximum values) ITM (A) 24 ITSM (A) 105 t=20ms One cycle 90 18 75 60 12 45 Tj=25℃ 30 Tj=125℃ 6 15 0 1 10 Number of cycles 100 0 0 1000 3.0 2.5 2.5 2.0 IGT3 1.5 IGT1&IGT2 1.5 1.0 1.0 0.5 0.5 Tj (℃) -20 0 20 1.5 2.0 VTM (V) 2.5 IH,IL(Tj) /IH,IL(Tj=25℃) IGT(Tj) /IGT(Tj=25℃) 3.0 0.0 -40 1.0 FIG.6: Relative variations of holding current, latching curretn versus junction temperature FIG.5: Relative variations of gate trigger current versus junction temperature 2.0 0.5 40 60 80 100 120 0.0 -40 140 IH IL Tj (℃) -20 0 20 40 60 80 100 120 140 Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the third version which is made in 12-June-2015. This document supersedes and replaces all information previously supplied. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved. TEL：+86-513-83639777 - 5 / 5- http://www.jjwdz.com