STEALTH II Rectifier FFPF60SB60DS tm Features 4A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 4A The FFPF60SB60DS is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. • High Reverse Voltage and High Reliability This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. • RoHS compliant Applications • General Purpose • Switching Mode Power Supply • Boost Diode in continuous mode power factor corrections • Power switching circuits TO220F 1 2 3 1. Cathode 2. Anode(Cathode) 3. Anode Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VRRM Peak Repetitive Reverse Voltage VRWM VR IF(AV) Average Rectified Forward Current IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave TJ, TSTG Parameter Ratings 600 Units V Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V 4 A @ TC = 100oC 40 Operating and Storage Temperature Range A o -65 to +150 C Thermal Characteristics Symbol RθJC Parameter Ratings Maximum Thermal Resistance, Junction to Case Units o 8.7 C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FFPF60SB60DS FFPF60SB60DSTU TO220F - - 50 ©2008 Fairchild Semiconductor Corporation FFPF60SB60DS Rev. A 1 www.fairchildsemi.com FFPF60SB60DS March 2008 TM Symbol Min. Typ. Max. Units VFM1 IF = 4A IF = 4A Parameter TC = 25oC TC = 125oC - 2.2 1.7 2.6 - V IRM1 VR = 600V VR = 600V TC = 25oC TC = 125oC - - 100 500 µA trr IF = 1A, di/dt = 100A/µs, VR = 30V TC = 25oC - 16 23 ns - 18 2 0.7 18 25 - ns A - 45 2.8 1.8 64 - nC 5 - - mJ trr Irr S factor Qrr IF = 4A, di/dt = 200A/µs, VR = 390V trr Irr S factor Qrr IF = 4A, di/dt = 200A/µs, VR = 390V WAVL Avalanche Energy ( L = 40mH) o TC = 25 C TC = 125oC nC ns A Notes: 1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2% Test Circuit and Waveforms FFPF60SB60DS Rev. A 2 www.fairchildsemi.com FFPF60SB60DS Electrical Characteristics TC = 25oC unless otherwise noted FFPF60SB60DS Typical Performance Characteristics Figure 1. Typical Forward Voltage Drop vs. Forward Current Figure 2. Typical Reverse Current vs. Reverse Voltage 40 50 TC = 125 C Reverse Current , IR [µA] Forward Current, IF [A] 10 o 10 o 75 C o 25 C 1 o TC = 125 C 1 o TC = 75 C 0.1 0.01 1E-3 0.1 0 1 2 3 4 Forward Voltage, VF [V] 10 5 Figure 3. Typical Junction Capacitance 100 200 300 400 Reverse Voltage, VR [V] 500 600 Figure 4. Typical Reverse Recovery Time vs. di/dt 60 50 Reverse Recovery Time, trr [ns] Typical Capacitance at 0V = 43 pF 40 Capacitances , Cj [pF] o TC = 25 C 30 20 10 50 o 40 TC = 125 C 30 o TC = 75 C 20 o TC = 25 C 0 0.1 1 10 Reverse Voltage, VR [V] 10 100 100 Figure 5. Typical Reverse Recovery Current vs. di/dt Average Forward Current, IF(AV) [A] Reverse Recovery Current, Irr [A] 500 600 9 6 5 o TC = 125 C 4 3 o TC = 75 C o TC = 25 C 2 FFPF60SB60DS Rev. A 300 400 di/dt [A/µs] Figure 6. Forward Current Derating Curve 7 1 100 200 200 300 400 di/dt [A/µs] 500 6 3 0 25 600 3 50 75 100 125 o Case temperature, TC [ C] 150 www.fairchildsemi.com FFPF60SB60DS Mechanical Dimensions 3.30 ±0.10 TO220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FFPF60SB60DS Rev. A 4 www.fairchildsemi.com The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EZSWITCH™ * FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * PDP-SPM™ Power220® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ® tm SupreMOS™ SyncFET™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I33 FFPF60SB60DS Rev. A 5 www.fairchildsemi.com FFPF60SB60DS TRADEMARKS