Preliminary 3 V InGaP HBT Power Amplifier AP131-317 Features -317 ■ Single Supply, 3.2 V Nominal Operating Voltage 0.157 (4.00 mm) BSC 0.148 (3.75 mm) BSC ■ Output Power Greater Than 35 dBm ■ High Power Added Efficiency of 55% 0.148 (3.75 mm) BSC ■ Ultra Small, Thermally Enhanced Micro Leadframe Package 0.079 (2.00 mm) 0.058 (1.47 mm) 1 2 0.157 (4.00 mm) BSC ■ Integral Analog Power Control With 70 dB of Dynamic Range 0.079 (2.00 mm) 0.031 0.024 (0.80 mm) (0.60 mm) 0.124 BSC REF. (0.32 mm) PIN INDICATOR ■ Low Current Standby Mode: < 10 µA 16 0.058 (1.47mm) 1 0.062 2 (0.16 mm) 0.025 (0.65 mm) + 0.004 (0.10 mm) 0.039 (1.00 mm) MAX. 12˚ MAX. ■ GPRS Class 12 Capable SEATING PLANE ■ Designed to Work With AP132-317 as a Dual-/Tri-Band Solution 0.001 (0.025 mm) + 0.001 (0.025 mm) Absolute Maximum Ratings Description Characteristic The AP131-317 is a high performance IC power amplifier designed for use as the final amplification stage in GSM and GPRS mobile phones, and other digital wireless applications in the 800–950 MHz band. It features 3-cell battery operation, integrated analog power control with over 70 dB of dynamic range, and exceptional power added efficiency over the full battery voltage range. The amplifier is manufactured on an advanced InGaP HBT process, known industry-wide for its excellent reliability and performance.The AP131-317 is designed to be stable over a wide temperature range of -40 to +85°C and over a 10:1 output VSWR load. Output matching is provided externally to maximize performance, reduce costs, and allow optimal matching for output power and efficiency over a broader frequency range. A dual- and/or tri-band solution can be obtained by combining the AP131-317 with Alpha’s AP132-317. The AP131-317 is packaged in a thermally enhanced, ultra small micro leadframe package. Value Supply Voltage VCC, Standby Mode, VAPC < 0.3 6 V Max. Power Control Voltage 4 V Max. Input Power 15 dBm Max. Operating Case Temperature -40 to +85°C Storage Temperature -45 to +120°C DC Specifications Parameter Condition Supply Voltage Leakage Current Min. Typ. Max. 2.7 3.2 4.2 V 10 µA PIN < -30 dBm, VAPC1,2 = 0.1 V Power Control Voltage 0.1 Power Control Current 2.6 V 5 mA Skyworks Solutions, Inc. [978] 241-7000 • Fax [978] 241-7906 • Email [email protected] • www.skyworksinc.com Specifications subject to change without notice. 2/02A Unit 1 3 V InGaP HBT Power Amplifier AP131-317 Electrical Specifications at 25°C Parameter Condition Frequency VAPC1,2 = 2.6 V, VCC = 3.2 V, CW VAPC1,2 = 2.6 V, VCC = 3.5 V, CW VAPC1,2 = 2.6 V, VCC = 2.7 V, T = -40 to +85°C Dynamic Range VAPC = 0.1 to 2.6 V Power Control Slope VAPC = 0.1 to 2.6 V Power Added Efficiency POUT = 34 dBm Input Power Input VSWR POUT = 5–35 dBm Forward Isolation PIN = 6 dBm, VAPC = 0.1 V PIN = 8 dBm, VAPC = 0.1 V Second Harmonic Typ. 880 Output Power Third Harmonic Min. At POUT Max., VCC = 3.2 V At POUT Max., VCC = 3.2 V All Others Non-harmonic Spurious Noise in the RX Band 925 MHz, 100 KHz BW 935 MHz, 100 KHz BW 1805–1880 MHz, 100 KHz BW 1930–1990 MHz, 100 KHz BW Ruggedness Output VSWR = 10:1 All Phase Angles, VCC = 4.2 V, PIN = 10 dBm, VAPC = 2.6 V Stability Output VSWR = 10:1 All Phase Angles, VCC = 4.2 V, PIN = 10 dBm, VAPC = 2.6 V 34.0 35.0 33.8 Max. Unit 915 MHz 35.2 36.0 34.5 dBm dBm dBm 60 dB 75 50 55 3 6 1.5:1 180 dB/VAPC 10 dBm % 2:1 -50 -40 dBm dBm -55 -45 dBc -66 -50 dBc -40 dBm -72 -84 -76 -76 dBm dBm dBm dBm No Module Damage or Permanent Performance Degradation -36 Unless otherwise stated: pulsed operation @ 12.5% duty cycle, 50 Ω system, VCC = 3.2 and TA = 25°C. 2 Skyworks Solutions, Inc. [978] 241-7000 • Fax [978] 241-7906 • Email [email protected] • www.skyworksinc.com Specifications subject to change without notice. 2/02A dBm 3 V InGaP HBT Power Amplifier AP131-317 GND VCC2 VCC2 N/C 2 F0 1 15 14 13 Pin Out Description 16 Pin Out Pin 4 10 RF Out VCC1 GND GND 9 RF Out 8 11 VREF 3 7 RF In VAPC1 RF Out VAPC2 12 6 2 5 GND Symbol Function 1 GND Ground connection. 2 GND Ground connection. 3 RF In RF input to power amplifier. A 180 Ω resistor to ground with an 18 pF in series capacitor and a 100 pF DC blocking capacitor are required. 4 GND Ground connection. 5 VCC Power supply input voltage. 1.8 nH bias injection inductor, and 100 pF, 1000 nF, 0.01 µF, 0.1 µF and 10 µF RF bypassing capacitors are required. 6 VAPC1 Power control input voltage for the first two stages of the amplifier. 100 pF and 10,000 pF RF bypassing capacitors are required. Can be connected to Pin 7 for single power control operation. 7 VAPC2 Power control input voltage for the third stage of the amplifier. 100 pF and 10,000 pF bypassing capacitors are required. Can be connected to Pin 6 for single power control operation. 8 VCC Power supply input voltage. 100 pF and 0.01 µF RF bypassing capacitors are required. 9 GND Ground connection. 10 RF Out/VCC3 RF output and power supply input voltage. 1. RF output: Two shunt matching capacitors, 16 pF high Q and a 4.7 pF, and a series 100 pF DC blocking capacitor is required. 2. VCC3: 100 pF, 1000 nF, 0.01 µF, 0.1 µF and 10 µF RF bypassing capacitors are required. 11 RF Out/VCC3 RF output and power supply input voltage. See description for Pin 10. 12 RF Out/VCC3 RF output and power supply input voltage. See description for Pin 10. 13 2 F0 Second harmonic termination. This pin can be used to alter the second harmonic output characteristics, but for nominal GSM operation, no matching elements are required. 14 N/C No connect. 15 VCC2 Power supply input voltage. A 68 pF interstage tuning capacitor is required along with 100 pF, 1000 nF, 0.01 µF, 0.1 µF and 10 µF RF bypassing capacitors. 16 VCC2 Power supply input voltage tied to Pin 15. Skyworks Solutions, Inc. [978] 241-7000 • Fax [978] 241-7906 • Email [email protected] • www.skyworksinc.com Specifications subject to change without notice. 2/02A 3