FDP7030BLS / FDB7030BLS 30V N-Channel PowerTrench SyncFET ™ General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP7030BLS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDP7030BLS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP7030BL in parallel with a Schottky diode. • 56 A, 30 V. RDS(ON) = 10.5 mΩ @ VGS = 10 V RDS(ON) = 16.5 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (15nC typical) • High performance trench technology for extremely low RDS(ON) and fast switching • High power and current handling capability D D G G D S G S TO-220 TO-263AB FDP Series Absolute Maximum Ratings Symbol FDB Series T A =25 oC unless otherwise noted Parameter VDSS Drain-Source Voltage VGSS ID Gate-Source Voltage Drain Current – Continuous – Pulsed Ratings Units 30 V ±20 V (Note 1) 56 (Note 1) 160 PD Total Power Dissipation @ TC = 25°C TJ, TSTG Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Derate above 25°C TL S A 65 W 0.43 W/°C –65 to +100 °C 275 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient 2.3 °C/W 62.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB7030BLS FDB7030BLS 13’’ 24mm 800 units FDP7030BLS FDP7030BLS Tube n/a 45 2001 Fairchild Semiconductor Corporation FDP7030BLS Rev B(W) FDP7030BLS/FDB7030BLS May 2001 Symbol Parameter T A = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSSF Gate–Body Leakage, Forward VGS = 20 V, IGSSR Gate–Body Leakage, Reverse VGS = –20 V ID = 1 mA On Characteristics ID = 1 mA 30 V 22 mV/°C 500 µA VDS = 0 V 100 nA VDS = 0 V –100 nA 3 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 1 mA, Referenced to 25°C 1 2.3 ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 28 A 47 S VDS = 15 V, f = 1.0 MHz VGS = 0 V, 1708 pF 474 pF 134 pF –4.4 VGS = 10 V, ID = 28 A VGS = 4.5 V, ID = 23 A VGS=10 V, ID = 28A, TJ = 100°C 8.6 13.2 12.4 mV/°C 10.5 16.5 16.5 50 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) (Note 2) 11 21 ns 8 16 ns Turn–Off Delay Time 30 48 ns tf Turn–Off Fall Time 16 29 ns Qg Total Gate Charge 15 21 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, VGS = 10 V, VDS = 15 V, VGS = 5 V ID = 1 A, RGEN = 6 Ω ID = 28 A 7 nC 5 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 11.5A, diF/dt = 300 A/µs (Note 1) 0.44 0.60 20 (Note 2) 20 (Note 1) 3.5 A 0.7 V ns nC Notes: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 2. See “SyncFET Schottky body diode characteristics” below. FDP7030BLS Rev B(W) FDP7030BLS/FDB7030BLS Electrical Characteristics FDP7030BLS/FDB7030BLS Typical Characteristics 120 6.0V 5.0V 90 ID, DRAIN CURRENT (A) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 VGS = 10V 4.5V 60 4.0V 30 0 VGS = 4.5V 1.8 1.6 5.0V 1.4 6.0V 7.0V 1.2 8.0V 0.8 0 1 2 3 4 5 0 20 40 VDS, DRAIN-SOURCE VOLTAGE (V) 60 80 100 120 I D, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.04 1.4 I D = 28A VGS =10V RDS(ON) , ON-RESISTANCE (OHM) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10V 1 1.2 1 0.8 0.6 I D = 14A 0.03 o TA = 100 C 0.02 o TA = 25 C 0.01 -50 -25 0 25 50 75 100 2 4 6 8 10 o T J, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 10 o TA = 55 C VD S = 5V IS, REVERSE DRAIN CURRENT (A) 60 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. o 25 C 50 ID, DRAIN CURRENT (A) o 100 C 40 30 20 10 VGS = 0V o TA = 100 C 1 o 25 C 0.1 o -55 C 0.01 0.001 0 2 2.5 3 3.5 4 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0 0.1 0.2 0.3 0.4 0.5 0.6 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP7030BLS Rev B(W) (continued) 2500 f = 1MHz VGS = 0 V VDS = 5V ID = 28A 10V 2000 8 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 C ISS 1500 1000 COSS 2 500 0 0 C RSS 0 5 10 15 20 25 0 30 5 Figure 7. Gate Charge Characteristics. 15 20 25 30 Figure 8. Capacitance Characteristics. 1000 100 P(pk), PEAK TRANSIENT POWER (W) 5000 10ms 100m 1s R DS(ON) LIMIT 10s 50s 10 DC V GS = 10V SINGLE PULSE o RθJA = 2.3 C/W o TA = 25 C 1 0.1 1 10 VD S, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE R θJA = 2.3°C/W T A = 25°C 4000 3000 2000 1000 0 0.001 100 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE I D, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg , GATE CHARGE (nC) 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R θJA (t) = r(t) + R θJA R θJA = 2.3 °C/W 0.2 0.1 0.1 0.05 P(pk 0.02 t1 0.01 t2 TJ - T A = P * R θJA (t) Duty Cycle, D = t 1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. FDP7030BLS Rev B(W) FDP7030BLS/FDB7030BLS Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 FDP7030BLS. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Figure 14. SyncFET diode reverse leakage versus drain-source voltage and temperature. Time: 10ns/div IDSS, REVERSE LEAKAGE CURRENT (A) Current: 0.8A/div 0.1 o T A = 100 C 0.01 0.001 o TA = 25 C 0.0001 0.00001 0 Figure 12. FDP7030BLS SyncFET body diode reverse recovery characteristic. 10 20 30 V DS, REVERSE VOLTAGE (V) For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDP7030BL). Current: 0.8A/div Figure 13. Non-SyncFET (FDP7030BL) body diode reverse recovery characteristic. Time: 10ns/div FDP7030BLS Rev B(W) FDP7030BLS/FDB7030BLS Typical Characteristics TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H2